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1. 发明申请

US20050263780A1 Light emitting diodes with graded composition active regions 失效
公开(公告)号：US20050263780A1
公开(公告)日：2005-12-01
申请号：US11177670
申请日：2005-07-07
申请人： David Bour , Nathan Gardner , Werner Goetz , Stephen Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher Kocot , Mark Hueschen
发明人： David Bour , Nathan Gardner , Werner Goetz , Stephen Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher Kocot , Mark Hueschen
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

2. 发明申请

US20050167690A1 III-NITRIDE LIGHT-EMITTING DEVICES WITH IMPROVED HIGH-CURRENT EFFICIENCY 有权
标题翻译：具有改善的高效率的III-NITRIDE发光装置
公开(公告)号：US20050167690A1
公开(公告)日：2005-08-04
申请号：US10769590
申请日：2004-01-30
申请人： Nathan Gardner , Christopher Kocot , Stephen Stockman
发明人： Nathan Gardner , Christopher Kocot , Stephen Stockman
IPC分类号： H01L33/00 , H01L33/32 , H01L29/24
CPC分类号： H01L33/32
摘要： A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.
摘要翻译：发光半导体器件包括在有源区附近形成的III-氮化物有源区和III-氮化物层，其厚度超过III-氮化物层中的应变松弛的临界厚度。例如，III-氮化物层可以是载流子限制层。在本发明的另一方面中，一种发光半导体器件包括III族氮化物发光层，In-Al 2 O 3，Ga 1-xy， SUB> N（0 <= x <= 1,0,0 <= y <= 1，x + y <= 1），以及插入发光层和In < 1＆lt; 1＆gt; Ga 1-xy N层。间隔层可以有利地将In和/或Al 2 Y 1 Ga 1-x-y N N层及其中的任何污染物与发光层隔开。可以有利地选择III-氮化物层的组成以确定III-氮化物层中的电场的强度，从而提高器件发光的效率。

3. 发明授权

US07087941B2 lll-phosphide light emitting devices with thin active layers 有权
标题翻译：具有薄活性层的磷化铟发光器件
公开(公告)号：US07087941B2
公开(公告)日：2006-08-08
申请号：US10011521
申请日：2001-11-05
申请人： Nathan F. Gardner , Fred A. Kish , Herman C. Chui , Stephen A. Stockman , Michael R. Krames , Gloria E. Hofler , Christopher Kocot , Nicolas J. Moll , Tun-Sein Tan
发明人： Nathan F. Gardner , Fred A. Kish , Herman C. Chui , Stephen A. Stockman , Michael R. Krames , Gloria E. Hofler , Christopher Kocot , Nicolas J. Moll , Tun-Sein Tan
IPC分类号： H01L31/72
CPC分类号： H01L33/30 , H01L33/02 , H01L33/305
摘要： The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.
摘要翻译：通过使吸收装置层尽可能薄，可以提高发光装置的提取效率。内部量子效率随着器件层变薄而减小。最佳活性层厚度平衡两种效果。 AlGaInP LED包括基板和包括第一导电类型的AlGaInP下约束层，第二导电类型的AlGaInP有源区和第二导电类型的AlGaInP上约束层的器件层。有源区的吸光度是发光器件中总吸光度的至少五分之一。该装置可选地包括至少一个插入限制层和活性区域中的一个AlGaInP的后置层。可以用氧掺杂p型上约束层提高可靠性。

4. 发明授权

US06403990B1 Short turn-off time photoconductive switch 失效
标题翻译：短关断时间光导开关
公开(公告)号：US06403990B1
公开(公告)日：2002-06-11
申请号：US09819101
申请日：2001-03-27
申请人： Yasuhisa Kaneko , Mitsuchika Saito , Christopher Kocot
发明人： Yasuhisa Kaneko , Mitsuchika Saito , Christopher Kocot
IPC分类号： H01L31109
CPC分类号： H01L31/109
摘要： The photoconductive switch comprises a first confinement layer, a second confinement layer, a photoconductive layer that includes a doped sub-layer and an undoped sub-layer, a first electrode and a second electrode. The first confinement layer is a layer of a first semiconductor material having a first band-gap energy and a first conductivity type. The second confinement layer is a layer of a second semiconductor material having a second band-gap energy. The photoconductive layer is a layer of a third semiconductor material having a third band-gap energy and a second conductivity type, opposite to the first conductivity type. The photoconductive layer is sandwiched between the first confinement layer and the second confinement layer, and the third band-gap energy is less than the first and second band-gap energies. In the photoconductive layer, the doped sub-layer is in contact with the first confinement layer, and the undoped sub-layer is adjacent the second confinement layer. The first electrode and the second electrode are separate from each other and are located on the surface of the first confinement layer remote from the photoconductive layer.
摘要翻译：光导开关包括第一限制层，第二限制层，包括掺杂子层和未掺杂子层的光电导层，第一电极和第二电极。第一限制层是具有第一带隙能和第一导电类型的第一半导体材料的层。第二限制层是具有第二带隙能量的第二半导体材料层。光电导层是具有与第一导电类型相反的第三带隙能和第二导电类型的第三半导体材料的层。光电导层夹在第一限制层和第二限制层之间，第三带隙能量小于第一和第二带隙能量。在光电导层中，掺杂子层与第一限制层接触，未掺杂的子层与第二限制层相邻。第一电极和第二电极彼此分离并且位于远离光电导层的第一限制层的表面上。

5. 发明授权

US06376826B1 Polarity-independent optical receiver and method for fabricating same 失效
标题翻译：非极性光接收机及其制造方法
公开(公告)号：US06376826B1
公开(公告)日：2002-04-23
申请号：US09534701
申请日：2000-03-24
申请人： Douglas M. Baney , Christopher Kocot
发明人： Douglas M. Baney , Christopher Kocot
IPC分类号： H01J4014
CPC分类号： H01L31/03046 , G01J1/44 , H01L31/108 , Y02E10/544 , Y02P70/521
摘要： A polarity-independent optical receiver is constructed so that the bias voltage applied to the optical receiver may be applied in a polarity-independent manner. The polarity-independent optical receiver is also constructed in a balanced arrangement, thus providing the ability to effectively suppress common-mode intensity noise present at the optical receiver. The polarity-independent optical receiver may advantageously be fabricated using metal-semiconductor-metal (MSM) technology.
摘要翻译：构成极性无关的光接收器，使得施加到光接收器的偏置电压可以以极性无关的方式被施加。极性无关的光接收机也被构造成平衡的布置，从而提供有效地抑制存在于光接收机的共模强度噪声的能力。极性无关的光接收器可有利地使用金属 - 半导体 - 金属（MSM）技术制造。

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