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1. 发明申请

US20050263780A1 Light emitting diodes with graded composition active regions 失效
公开(公告)号：US20050263780A1
公开(公告)日：2005-12-01
申请号：US11177670
申请日：2005-07-07
申请人： David Bour , Nathan Gardner , Werner Goetz , Stephen Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher Kocot , Mark Hueschen
发明人： David Bour , Nathan Gardner , Werner Goetz , Stephen Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher Kocot , Mark Hueschen
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

2. 发明申请

US20050167690A1 III-NITRIDE LIGHT-EMITTING DEVICES WITH IMPROVED HIGH-CURRENT EFFICIENCY 有权
标题翻译：具有改善的高效率的III-NITRIDE发光装置
公开(公告)号：US20050167690A1
公开(公告)日：2005-08-04
申请号：US10769590
申请日：2004-01-30
申请人： Nathan Gardner , Christopher Kocot , Stephen Stockman
发明人： Nathan Gardner , Christopher Kocot , Stephen Stockman
IPC分类号： H01L33/00 , H01L33/32 , H01L29/24
CPC分类号： H01L33/32
摘要： A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.
摘要翻译：发光半导体器件包括在有源区附近形成的III-氮化物有源区和III-氮化物层，其厚度超过III-氮化物层中的应变松弛的临界厚度。例如，III-氮化物层可以是载流子限制层。在本发明的另一方面中，一种发光半导体器件包括III族氮化物发光层，In-Al 2 O 3，Ga 1-xy， SUB> N（0 <= x <= 1,0,0 <= y <= 1，x + y <= 1），以及插入发光层和In < 1＆lt; 1＆gt; Ga 1-xy N层。间隔层可以有利地将In和/或Al 2 Y 1 Ga 1-x-y N N层及其中的任何污染物与发光层隔开。可以有利地选择III-氮化物层的组成以确定III-氮化物层中的电场的强度，从而提高器件发光的效率。

3. 发明申请

US20070057249A1 Semiconductor light emitting device with lateral current injection in the light emitting region 有权
标题翻译：在发光区域具有横向电流注入的半导体发光器件
公开(公告)号：US20070057249A1
公开(公告)日：2007-03-15
申请号：US11226184
申请日：2005-09-13
申请人： James Kim , Stephen Stockman
发明人： James Kim , Stephen Stockman
IPC分类号： H01L31/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/025 , H01L33/06 , H01L33/14 , H01L33/24 , H01S5/0424
摘要： A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.
摘要翻译：半导体发光器件包括有源区，n型区和包括延伸到有源区的部分的p型区。有源区可以包括由势垒层分隔开的多个量子阱，并且p型延伸部穿透至少一个量子阱层。通过向各个量子阱提供直流电流路径，p型区域延伸到有源区域中的扩展可以提供对有源区域的各个量子阱中的载流子的均匀填充。这种均匀填充可以通过降低最接近体p型区域的量子阱中的载流子密度来提高高电流密度下的操作效率，从而减少对非辐射复合物损失的载流子数量。

4. 发明申请

US20050212005A1 Light emitting devices with compact active regions 有权
标题翻译：具有紧凑有源区域的发光器件
公开(公告)号：US20050212005A1
公开(公告)日：2005-09-29
申请号：US11139325
申请日：2005-05-27
申请人： Mira Misra , Yu-Chen Shen , Stephen Stockman
发明人： Mira Misra , Yu-Chen Shen , Stephen Stockman
IPC分类号： H01L33/10 , H01L33/20 , H01L33/40 , H01L51/52 , H01L29/22 , H01L29/227 , H01L33/00
CPC分类号： H01L33/10 , H01L33/20 , H01L33/405 , H01L51/5265
摘要： A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25λn and has a portion located between about 0.6λn and 0.75λn from the electrode, where λn is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6λn and 0.75λn from the electrode and a portion of a second cluster located between about 1.2λn and 1.35λn from the electrode.
摘要翻译：发光器件包括第一导电类型的区域，第二导电类型的区域，有源区域和电极。有源区设置在第一导电类型区域和第二导电类型区域之间，第二导电类型区域设置在有源区域和电极之间。有源区具有小于或等于约0.25λn的总厚度，并且具有位于大约0.6λ/ n和0.75λ/ n之间的部分 >其中λN是由第二导电类型的区域中的有源区发射的光的波长。在一些实施例中，有源区域包括多个簇，其中第一簇的一部分位于距离该电极的大约0.6λ至0.3λ和/ 位于距离电极约1.2λ1和1.35λN之间的第二簇。

5. 发明申请

US20050169333A1 III-nitride light emitting device with reduced polarization fields 有权
标题翻译：具有降低的偏振场的III族氮化物发光器件
公开(公告)号：US20050169333A1
公开(公告)日：2005-08-04
申请号：US10769260
申请日：2004-01-30
申请人： Satoshi Watanabe , Stephen Stockman
发明人： Satoshi Watanabe , Stephen Stockman
IPC分类号： H01L33/32 , H01S5/00
CPC分类号： H01L33/32
摘要： A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than in the device with conventional spacer layers, such as GaN spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than about 0.02 C/m2. In some embodiments, at least one of the spacer layers is a quaternary alloy of aluminum, indium, gallium, and nitrogen.
摘要翻译：半导体发光器件包括夹在两个间隔层之间的发光层。间隔层中的至少一个间隔层的净极化与发光层中的净极化之间的差异小于具有常规间隔层的器件，例如GaN间隔层。间隔层中的至少一个间隔层的净极化与发光层中的净极化之间的差异小于约0.02C / m 2。在一些实施例中，间隔层中的至少一个是铝，铟，镓和氮的四元合金。

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