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1. 发明申请

US20100102289A1 NONVOLATILE RESISTIVE MEMORY DEVICES 失效
标题翻译：非易失性电阻记忆体装置
公开(公告)号：US20100102289A1
公开(公告)日：2010-04-29
申请号：US12606681
申请日：2009-10-27
申请人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
发明人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/77 , H01L27/2472 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Nonvolatile resistive memory devices are disclosed. In some embodiments, the memory devices comprise multilayer structures including electrodes, one or more resistive storage layers, and separation layers. The separation layers insulate the resistive storage layers to prevent charge leakage from the storage layers and allow for the use of thin resistive storage layers. In some embodiments, the nonvolatile resistive memory device includes a metallic multilayer comprising two metallic layers about an interlayer. A dopant at an interface of the interlayer and metallic layers can provide a switchable electric field within the multilayer.
摘要翻译：公开了非易失性电阻性存储器件。在一些实施例中，存储器件包括包括电极，一个或多个电阻存储层和分离层的多层结构。分离层使电阻存储层绝缘，以防止来自存储层的电荷泄漏并允许使用薄的电阻存储层。在一些实施例中，非易失性电阻性存储器件包括金属层，其包括围绕中间层的两个金属层。在中间层和金属层的界面处的掺杂剂可在多层内提供可切换的电场。

2. 发明授权

US08519376B2 Nonvolatile resistive memory devices 失效
标题翻译：非易失性电阻式存储器件
公开(公告)号：US08519376B2
公开(公告)日：2013-08-27
申请号：US12606681
申请日：2009-10-27
申请人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
发明人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
IPC分类号： H01L27/26
CPC分类号： G11C13/0007 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/77 , H01L27/2472 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Nonvolatile resistive memory devices are disclosed. In some embodiments, the memory devices comprise multilayer structures including electrodes, one or more resistive storage layers, and separation layers. The separation layers insulate the resistive storage layers to prevent charge leakage from the storage layers and allow for the use of thin resistive storage layers. In some embodiments, the nonvolatile resistive memory device includes a metallic multilayer comprising two metallic layers about an interlayer. A dopant at an interface of the interlayer and metallic layers can provide a switchable electric field within the multilayer.
摘要翻译：公开了非易失性电阻性存储器件。在一些实施例中，存储器件包括包括电极，一个或多个电阻存储层和分离层的多层结构。分离层使电阻存储层绝缘，以防止来自存储层的电荷泄漏并允许使用薄的电阻存储层。在一些实施例中，非易失性电阻性存储器件包括金属层，其包括围绕中间层的两个金属层。在中间层和金属层的界面处的掺杂剂可在多层内提供可切换的电场。

3. 发明申请

US20090289736A1 MAGNETIC SWITCHES FOR SPINWAVE TRANSMISSION 审中-公开
标题翻译：用于旋转传动的磁力开关
公开(公告)号：US20090289736A1
公开(公告)日：2009-11-26
申请号：US12125974
申请日：2008-05-23
申请人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
发明人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
IPC分类号： H01P1/10 , H01H53/00
CPC分类号： H01H59/0009 , H01H57/00
摘要： Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.
摘要翻译：旋转波传输系统包括用于引导用于数据传输和处理的旋转波的传输的开关装置。在一个具体实施例中，用于旋转波传输的系统具有被配置为用于传输旋转波的第一磁条和用于传播旋转波的第二磁条，其间具有间隙。该系统包括具有第一取向和第二取向的耦合器，其中在第一取向中，在磁条之间不形成磁连接，并且在第二取向中，在磁条之间形成连接。该连接允许将旋转波从第一磁条传输到第二磁条。第一和第二取向可以是耦合器的物理位置，通过热，压电或静电力移动，或者第一和第二取向可以是耦合器的磁状态。

4. 发明授权

US08508973B2 Method of switching out-of-plane magnetic tunnel junction cells 有权
标题翻译：切换平面外的磁隧道结电池的方法
公开(公告)号：US08508973B2
公开(公告)日：2013-08-13
申请号：US12946900
申请日：2010-11-16
申请人： Insik Jin , Xiaobin Wang , Yong Lu , Haiwen Xi
发明人： Insik Jin , Xiaobin Wang , Yong Lu , Haiwen Xi
IPC分类号： G11C11/22
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01L43/08
摘要： A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including: passing an AC switching current through the out-of-plane magnetic tunnel junction cell, wherein the AC switching current switches the magnetization orientation of the ferromagnetic free layer.
摘要翻译：一种切换面外磁性隧道结电池的铁磁自由层的磁化取向的方法，该方法包括：使交流开关电流通过面外磁性隧道结电池，其中交流开关电流切换铁磁自由层的磁化方向。

5. 发明授权

US07939188B2 Magnetic stack design 有权
标题翻译：磁栈设计
公开(公告)号：US07939188B2
公开(公告)日：2011-05-10
申请号：US12501632
申请日：2009-07-13
申请人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
发明人： Haiwen Xi , Antoine Khoueir , Brian Lee , Pat Ryan , Michael Tang , Insik Jin , Paul E. Anderson
IPC分类号： G11B5/39 , H01F10/08 , H01L43/08 , H01L43/12
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.
摘要翻译：具有具有可切换磁化取向的自由层的磁性堆叠，具有钉扎磁化取向的参考层和它们之间的阻挡层。堆叠包括与自由层电隔离并与参考层物理接触的环形反铁磁钉扎层。在一些实施例中，参考层大于自由层。

6. 发明申请

US20110007551A1 Non-Volatile Memory Cell with Non-Ohmic Selection Layer 有权
标题翻译：具有非欧姆选择层的非易失性存储单元
公开(公告)号：US20110007551A1
公开(公告)日：2011-01-13
申请号：US12502222
申请日：2009-07-13
申请人： Wei Tian , Insik Jin , Venugopalan Vaithyanathan , Haiwen Xi , Michael Xuefei Tang , Brian Lee
发明人： Wei Tian , Insik Jin , Venugopalan Vaithyanathan , Haiwen Xi , Michael Xuefei Tang , Brian Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C13/0011 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/51 , G11C2213/76 , H01L27/2409 , H01L45/085 , H01L45/1233 , H01L45/1246
摘要： A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.
摘要翻译：公开了一种包括非欧姆选择层的非易失性存储单元和相关联的方法。根据一些实施例，非易失性存储器单元由耦合到非欧姆选择层的电阻感测元件（RSE）组成。响应于大于或等于预定阈值的电流，选择层被配置为从第一电阻状态转变到第二电阻状态。

7. 发明授权

US07791925B2 Structures for resistive random access memory cells 有权
标题翻译：电阻随机存取存储单元的结构
公开(公告)号：US07791925B2
公开(公告)日：2010-09-07
申请号：US12262262
申请日：2008-10-31
申请人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C7/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要翻译：一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

8. 发明申请

US20100135061A1 Non-Volatile Memory Cell with Ferroelectric Layer Configurations 审中-公开
标题翻译：具有铁电层配置的非易失性存储单元
公开(公告)号：US20100135061A1
公开(公告)日：2010-06-03
申请号：US12326714
申请日：2008-12-02
申请人： Shaoping Li , Kaizhong Gao , Insik Jin , Song Xue , Haiwen Xi , Zheng Gao , Eileen Yan
发明人： Shaoping Li , Kaizhong Gao , Insik Jin , Song Xue , Haiwen Xi , Zheng Gao , Eileen Yan
IPC分类号： G11C11/22 , H01L29/68
CPC分类号： G11C11/22 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a ferroelectric material layer between the first and second electrodes. The ferroelectric material layer may be provided between, e.g., adjacent, two side layers of a ferroelectric metal oxide or between a single layer of a ferroelectric metal oxide and an electrode. The ferroelectric metal oxide may in some cases include a uniform layered structure such as a bismuth layer-structured ferroelectric material like Bi4Ti3O12. In some embodiments, the ferroelectric material layer is formed at least partially from PbZrxTi1-xO3. A non-volatile memory array including such memory cells is also provided.
摘要翻译：在本发明的一些实施例中，非易失性存储单元在第一和第二电极之间设置有第一电极，第二电极以及铁电金属氧化物和铁电材料层的一个或多个侧层。铁电材料层可以设置在例如铁电金属氧化物的相邻的两个侧层之间或者设置在单层铁电金属氧化物和电极之间。在一些情况下，铁电金属氧化物可以包括均匀的层状结构，例如诸如Bi 4 Ti 3 O 12的铋层结构的铁电材料。在一些实施例中，铁电材料层至少部分地由PbZrxTi1-xO3形成。还提供了包括这种存储单元的非易失性存储器阵列。

9. 发明申请

US20100104115A1 MICRO MAGNETIC SPEAKER DEVICE WITH BALANCED MEMBRANE 审中-公开
标题翻译：具有平衡膜的微型磁性扬声器装置
公开(公告)号：US20100104115A1
公开(公告)日：2010-04-29
申请号：US12361905
申请日：2009-01-29
申请人： Jun Zheng , Dadi Setiadi , Haiwen Xi , Insik Jin , Nurul Amin
发明人： Jun Zheng , Dadi Setiadi , Haiwen Xi , Insik Jin , Nurul Amin
IPC分类号： H04R25/00 , H04R1/00
CPC分类号： H04R1/00
摘要： A micro magnetic device with a micro magnetic speaker unit having a first element, a second element, and a membrane therebetween. Each of the elements comprises a body, a pole of soft magnetic material, an electrically conductive coil positioned around the pole, and a permanent magnet connected to the membrane. The first element and the second element are magnetically identical. A plurality of speaker units can be combined to provide a speaker array.
摘要翻译：具有微型磁性扬声器单元的微型磁性装置具有第一元件，第二元件和它们之间的隔膜。每个元件包括主体，软磁材料的极，围绕极的定位的导电线圈和连接到膜的永磁体。第一元件和第二元件是磁性相同的。可以组合多个扬声器单元以提供扬声器阵列。

10. 发明申请

US20100102369A1 FERROELECTRIC MEMORY WITH MAGNETOELECTRIC ELEMENT 审中-公开
标题翻译：具有磁电元件的电磁记忆体
公开(公告)号：US20100102369A1
公开(公告)日：2010-04-29
申请号：US12420131
申请日：2009-04-08
申请人： Wei Tian , Haiwen Xi , Yuankai Zheng , Venugopalan Vaithyanathan , Insik Jin
发明人： Wei Tian , Haiwen Xi , Yuankai Zheng , Venugopalan Vaithyanathan , Insik Jin
IPC分类号： H01L29/82 , H01L29/68
CPC分类号： H01L27/11507 , G11C11/1675 , G11C11/22 , G11C11/2275
摘要： A ferroelectric memory cell that has a magnetoelectric element between a first electrode and a second electrode, the magnetoelectric element comprising a ferromagnetic material layer and a multiferroic material layer with an interface therebetween. The magnetization orientation of the ferromagnetic material layer and the multiferroic material layer may be in-plane or out-of-plane. FeRAM memory devices are also provided.
摘要翻译：一种在第一电极和第二电极之间具有磁电元件的铁电存储器单元，所述磁电元件包括铁磁材料层和在其间具有界面的多铁性材料层。铁磁材料层和多铁性材料层的磁化取向可以是平面内或平面外的。还提供了FeRAM存储器件。

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