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1. 发明申请

US20090140240A1 ORGANIC THIN FILM TRANSISTOR 审中-公开
标题翻译：有机薄膜晶体管
公开(公告)号：US20090140240A1
公开(公告)日：2009-06-04
申请号：US12332502
申请日：2008-12-11
申请人： Hiroaki NAKAMURA , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki NAKAMURA , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L51/30
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏极组成的至少三个端子; 绝缘体层和有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含具有由C6H5表示的苯乙烯基结构的苯乙烯基衍生物或者由不具有分子量分布的C 6 H 5 -CH-C 6 H 5 -CH-CH-C 6 H 5表示的二苯乙烯基结构。晶体管具有快速的响应速度（驱动速度），并且进一步实现了作为晶体管的增强性能的大的开/关比。

2. 发明申请

US20070187674A1 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20070187674A1
公开(公告)日：2007-08-16
申请号：US11369862
申请日：2006-03-08
申请人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏电极组成的至少三个端子; 绝缘体层和衬底上的有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含具有由C表示的苯乙烯基结构的苯乙烯基衍生物或者由C _{表示的二苯乙烯基结构，或者由C > 6 H 5 -CH-CH-C 6 H 5 -CH-CH-C 6 各自不具有分子量分布。晶体管具有快速的响应速度（驱动速度），并且进一步实现了作为晶体管的增强性能的大的开/关比。}

3. 发明授权

US08445894B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US08445894B2
公开(公告)日：2013-05-21
申请号：US12388119
申请日：2009-02-18
申请人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L29/08
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏极组成的至少三个端子; 绝缘体层和有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含具有由C6H5表示的苯乙烯基结构的苯乙烯基衍生物 -CH = CH-C6H5或由不具有分子量分布的C 6 H 5 -CH = CH-C 6 H 5 -CH = CH-C 6 H 5表示的二苯乙烯基结构。晶体管具有快速的响应速度（驱动速度），并且进一步实现了作为晶体管的增强性能的大的开/关比。

4. 发明申请

US20090159878A1 ORGANIC THIN FILM TRANSISTOR 有权
公开(公告)号：US20090159878A1
公开(公告)日：2009-06-25
申请号：US12388119
申请日：2009-02-18
申请人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L51/30
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.

5. 发明授权

US07521710B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US07521710B2
公开(公告)日：2009-04-21
申请号：US11369862
申请日：2006-03-08
申请人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L51/30
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏极组成的至少三个端子; 绝缘体层和有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含具有由C6H5表示的苯乙烯基结构的苯乙烯基衍生物或者由不具有分子量分布的C 6 H 5 -CH-C 6 H 5 -CH-CH-C 6 H 5表示的二苯乙烯基结构。晶体管具有快速的响应速度（驱动速度），并且进一步实现了作为晶体管的增强性能的大的开/关比。

6. 发明申请

US20090095954A1 FIELD-EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20090095954A1
公开(公告)日：2009-04-16
申请号：US12199446
申请日：2008-08-27
申请人： Tomoaki Onoue , Takeshi Yasuda , Tetsuo Tsutsui
发明人： Tomoaki Onoue , Takeshi Yasuda , Tetsuo Tsutsui
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0533 , H01L21/31691 , H01L51/0537
摘要： A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.
摘要翻译：提供场效应晶体管，其包括有机薄膜，并且可以在同时确保稳定的高场效应迁移率的同时实现低阈值电压。在设置有栅电极，源极，漏极，半导体膜，栅极绝缘膜和基板的场效应晶体管中，栅极绝缘膜由多个绝缘层形成。这里，与半导体膜接触的第一绝缘层由通过CVD法形成为膜的聚对二甲苯形成。第二绝缘层由例如氰乙基普兰兰形成，并且介电常数规定为高于第一绝缘层的介电常数。

7. 发明授权

US07932177B2 Field-effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US07932177B2
公开(公告)日：2011-04-26
申请号：US12199446
申请日：2008-08-27
申请人： Tomoaki Onoue , Takeshi Yasuda , Tetsuo Tsutsui
发明人： Tomoaki Onoue , Takeshi Yasuda , Tetsuo Tsutsui
IPC分类号： H01L21/4763
CPC分类号： H01L51/0533 , H01L21/31691 , H01L51/0537
摘要： A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.
摘要翻译：提供场效应晶体管，其包括有机薄膜，并且可以在同时确保稳定的高场效应迁移率的同时实现低阈值电压。在设置有栅电极，源极，漏极，半导体膜，栅极绝缘膜和基板的场效应晶体管中，栅极绝缘膜由多个绝缘层形成。这里，与半导体膜接触的第一绝缘层由通过CVD法形成为膜的聚对二甲苯形成。第二绝缘层由例如氰乙基普兰兰形成，并且介电常数规定为高于第一绝缘层的介电常数。

8. 发明授权

US07620074B2 Communication system, master communication device, and slave communication device 失效
标题翻译：通信系统，主通信设备和从通信设备
公开(公告)号：US07620074B2
公开(公告)日：2009-11-17
申请号：US11511301
申请日：2006-08-29
申请人： Takeshi Yasuda , Yoshihiro Ashi , Ken Mutou
发明人： Takeshi Yasuda , Yoshihiro Ashi , Ken Mutou
IPC分类号： H04J3/06
CPC分类号： H04J3/0664 , H04J3/0688 , H04J2203/0085 , H04L12/403
摘要： A communication system is provided which allows synchronous devices in different synchronous communication networks to have synchronous communications with one another via an asynchronous communication network. In the communication system of the present invention, a master communication device generates a master clock based on a reference clock which is provided by a clock supplier. The master communication device sends a synchronization information frame, which contains information about the generated master clock, to plural slave communication devices via the asynchronous communication network. The slave communication devices each reproduce the master clock from the received synchronization information frame.
摘要翻译：提供一种通信系统，其允许不同同步通信网络中的同步设备经由异步通信网络彼此进行同步通信。在本发明的通信系统中，主通信装置基于由时钟提供者提供的基准时钟生成主时钟。主通信设备经由异步通信网络将包含有关生成的主时钟的信息的同步信息帧发送到多个从通信设备。从属通信设备各自从接收到的同步信息帧中再现主时钟。

9. 发明申请

US20080102716A1 CONDUCTIVE TERMINAL WELDING METHOD AND CONDUCTIVE TERMINAL STRUCTURE 有权
标题翻译：导电终端焊接方法和导电终端结构
公开(公告)号：US20080102716A1
公开(公告)日：2008-05-01
申请号：US11927027
申请日：2007-10-29
申请人： Akihiko Nishioka , Takeshi Yasuda
发明人： Akihiko Nishioka , Takeshi Yasuda
IPC分类号： H01R4/02 , B23K11/18
CPC分类号： H01R43/0214 , H05K3/202 , H05K3/328
摘要： The invention provides a welding method by resistance welding capable of adequately increasing a welding strength between two conductive terminals each made of copper, and a conductive terminal structure obtained by the method. A first conductive terminal made of a tinned flat copper plate is molded such that a step portion is formed at a position spaced away from a tip end position of the first conductive terminal and a projection is formed at a tip end portion ranging from the tip end position to the step portion. A second conductive terminal made of the aforementioned copper plate and the first conductive terminal are molded such that a weld surface of the second conductive terminal has a size to cover an entire weld surface of the projection of the first conductive terminal. Simultaneously, the respective conductive terminals are molded such that the tip end portion of the first conductive terminal becomes substantially equal in sectional area to a weld portion of the second conductive terminal. These conductive terminals are brought into contact under pressure with electrodes equal in electrical characteristic to each other, and then electric current is fed to the electrodes. Thus, the projection of the first conductive terminal is melted into and is welded to the weld surface of the second conductive terminal.
摘要翻译：本发明提供一种能够充分提高由铜构成的两个导电端子之间的焊接强度的电阻焊接方法和通过该方法获得的导电端子结构的焊接方法。由镀锡扁平铜板制成的第一导电端子被模制成在与第一导电端子的末端位置隔开的位置上形成台阶部分，并且在尖端部分形成突出部，位置到台阶部分。由上述铜板和第一导电端子制成的第二导电端子被模制成使得第二导电端子的焊接表面具有覆盖第一导电端子的突起的整个焊接表面的尺寸。同时，各导电端子被模制成使得第一导电端子的末端部分与第二导电端子的焊接部分的截面面积基本相等。这些导电端子在压力下与彼此具有电特性相等的电极接触，然后将电流馈送到电极。因此，第一导电端子的突起熔化并焊接到第二导电端子的焊接表面。

10. 发明申请

US20070078044A1 TOOL MAGAZINE DEVICE FOR VERTICAL MACHINING CENTER 失效
标题翻译：用于垂直加工中心的工具杂志装置
公开(公告)号：US20070078044A1
公开(公告)日：2007-04-05
申请号：US11534689
申请日：2006-09-25
申请人： Minoru Hazeyama , Takeshi Yasuda
发明人： Minoru Hazeyama , Takeshi Yasuda
IPC分类号： B23Q3/157
CPC分类号： B23Q3/15526 , B23Q3/1572 , Y10T483/1752 , Y10T483/1891
摘要： The invention provides a tool magazine device for a vertical machining center having a protective cover for a shank. A tool magazine device 100 disposed in a vertical machining center comprises a chain 120 moved between sprocket wheels 130 and 140, and the chain 120 is equipped with tool holders 200. Each tool holder 200 has a tool holder member 220 for holding the shank portion of the tool 1 and a shank pod 230 for covering the shank portion. The automatic tool change preparation device 300 lifts the shank pod 230 by gripping a knob 250 of a shaft 240 connected to the shank pod 230, so as to enable an automatic tool change arm to change the tool 1.
摘要翻译：本发明提供了一种用于垂直加工中心的刀库装置，其具有用于柄的保护盖。设置在垂直加工中心中的刀库装置100包括在链轮130和140之间移动的链条120，并且链条120配备有工具夹具200.每个工具夹具200具有工具保持件220，用于将柄部分工具1和用于覆盖柄部的柄柄230。自动换刀准备装置300通过夹持连接到柄柄壳体230的轴240的旋钮250来提升柄部壳体230，从而能够使自动换刀臂改变工具1。

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