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1. 发明申请

US20050276964A1 Film-forming composition, insulating material-forming composition, insulating film and electronic device 失效
标题翻译：成膜组合物，绝缘材料形成组合物，绝缘膜和电子器件
公开(公告)号：US20050276964A1
公开(公告)日：2005-12-15
申请号：US11149385
申请日：2005-06-10
申请人： Katsuyuki Watanabe , Morio Yagihara , Kensuke Morita , Yutaka Adegawa , Akira Asano
发明人： Katsuyuki Watanabe , Morio Yagihara , Kensuke Morita , Yutaka Adegawa , Akira Asano
IPC分类号： C08G61/02 , C08J9/00 , C08L65/00 , B32B3/26
CPC分类号： C08J9/28 , C08G61/02 , C08J9/26 , C08J2201/046 , C08J2365/00 , C08L65/00 , H01B3/307 , H01B3/441 , Y10T428/249953 , Y10T428/31855
摘要： A film-forming composition comprising: a compound having a specific cage structure; a pore-forming agent; an adhesion promoter; and so on, an insulating film formed from the film-forming composition and an electronic device comprising the insulating film.
摘要翻译：一种成膜组合物，其包含：具有特定笼结构的化合物; 成孔剂; 粘合促进剂; 等等，由成膜组合物形成的绝缘膜和包括绝缘膜的电子器件。

2. 发明授权

US07501185B2 Film-forming composition, insulating material-forming composition, insulating film and electronic device 失效
标题翻译：成膜组合物，绝缘材料形成组合物，绝缘膜和电子器件
公开(公告)号：US07501185B2
公开(公告)日：2009-03-10
申请号：US11149385
申请日：2005-06-10
申请人： Katsuyuki Watanabe , Morio Yagihara , Kensuke Morita , Yutaka Adegawa , Akira Asano
发明人： Katsuyuki Watanabe , Morio Yagihara , Kensuke Morita , Yutaka Adegawa , Akira Asano
IPC分类号： B32B27/30 , C07C13/28
CPC分类号： C08J9/28 , C08G61/02 , C08J9/26 , C08J2201/046 , C08J2365/00 , C08L65/00 , H01B3/307 , H01B3/441 , Y10T428/249953 , Y10T428/31855
摘要： A film-forming composition comprising: a compound having a specific cage structure; a pore-forming agent; an adhesion promoter; and so on, an insulating film formed from the film-forming composition and an electronic device comprising the insulating film.
摘要翻译：一种成膜组合物，其包含：具有特定笼结构的化合物; 成孔剂; 粘合促进剂; 等等，由成膜组合物形成的绝缘膜和包括绝缘膜的电子器件。

3. 发明申请

US20050267308A1 Silicon-containing compound, composition containing said compound, and insulating material 失效
标题翻译：含硅化合物，含有所述化合物的组合物和绝缘材料
公开(公告)号：US20050267308A1
公开(公告)日：2005-12-01
申请号：US11138352
申请日：2005-05-27
申请人： Kensuke Morita , Morio Yagihara , Koji Wariishi
发明人： Kensuke Morita , Morio Yagihara , Koji Wariishi
IPC分类号： C07F7/08 , C07F7/18 , C08L83/04 , C09D183/04
CPC分类号： C07F7/1804
摘要： A composition for forming an insulating film comprising at least one of a compound represented by formula (1), a hydrolysate of the compound represented by formula (1) and a condensate of the compound represented by formula (1): AnSiX(4-n) (1) wherein n represents an integer of from 1 to 3; A represents an optionally substituted group containing a cage structure formed by 11 or more carbon atoms, and when n represents an integer of 2 or 3, A's are mutually same or different; and X represents a hydrolyzable group, and when n represents an integer of 1 or 2, X's are mutually same or different.
摘要翻译：一种用于形成绝缘膜的组合物，其包含由式（1）表示的化合物，由式（1）表示的化合物的水解产物和由式（1）表示的化合物的缩合物中的至少一种：＆lt; -formulae description =“In-line Formulas”end =“lead”？> A SiX（4-n）<1> <？in-line-formula description =“在线公式”end =“tail”？>其中n表示1至3的整数; A表示含有由11个或更多个碳原子形成的笼状结构的任选取代的基团，当n表示2或3的整数时，A相互相同或不同; X表示可水解基团，当n表示1或2的整数时，X相同或不同。

4. 发明授权

US07534904B2 Silicon-containing compound, composition containing said compound, and insulating material 失效
标题翻译：含硅化合物，含有所述化合物的组合物和绝缘材料
公开(公告)号：US07534904B2
公开(公告)日：2009-05-19
申请号：US11138352
申请日：2005-05-27
申请人： Kensuke Morita , Morio Yagihara , Koji Wariishi
发明人： Kensuke Morita , Morio Yagihara , Koji Wariishi
IPC分类号： C07F7/18
CPC分类号： C07F7/1804
摘要： A composition for forming an insulating film comprising at least one of a compound represented by formula (1), a hydrolysate of the compound represented by formula (1) and a condensate of the compound represented by formula (1): AnSiX(4-n) (1) wherein n represents an integer of from 1 to 3; A represents an optionally substituted group containing a cage structure formed by 11 or more carbon atoms, and when n represents an integer of 2 or 3, A's are mutually same or different; and X represents a hydrolyzable group, and when n represents an integer of 1 or 2, X's are mutually same or different.
摘要翻译：一种用于形成绝缘膜的组合物，其包含由式（1）表示的化合物，由式（1）表示的化合物的水解产物和由式（1）表示的化合物的缩合物中的至少一种：＆lt; -formulae description =“In-line Formulas”end =“lead”？> AnSiX（4-n）（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中n 表示1〜3的整数， A表示含有由11个或更多个碳原子形成的笼状结构的任选取代的基团，当n表示2或3的整数时，A相互相同或不同; X表示可水解基团，当n表示1或2的整数时，X相同或不同。

5. 发明授权

US07320828B2 Composition for forming insulating film and process for producing insulating film 失效
标题翻译：用于形成绝缘膜的组合物和用于制造绝缘膜的方法
公开(公告)号：US07320828B2
公开(公告)日：2008-01-22
申请号：US11060544
申请日：2005-02-18
申请人： Kensuke Morita , Yutaka Adegawa
发明人： Kensuke Morita , Yutaka Adegawa
IPC分类号： B32B9/04
CPC分类号： H01L21/3124 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , Y10T428/31663
摘要： A composition for forming an insulating film comprising at least one of a compound represented by formula (I), a hydrolysate of the compound represented by formula (I) and a condensate of the compound represented by formula (I): wherein R1 to R7 each independently represents an organic group, and R1 to R7 are the same or different. And an insulating film obtained by a process, the process comprising using the compound represented by formula (I) as a starting material.
摘要翻译：一种用于形成绝缘膜的组合物，其包含由式（I）表示的化合物，式（I）表示的化合物的水解产物和由式（I）表示的化合物的缩合物中的至少一种：其中R“ R 1至R 7各自独立地表示有机基团，R 1至R 7相同或不同。和通过该方法获得的绝缘膜，该方法包括使用由式（I）表示的化合物作为起始原料。

6. 发明申请

US20050182227A1 Composition for forming insulating film and process for producing insulating film 失效
标题翻译：用于形成绝缘膜的组合物和用于制造绝缘膜的方法
公开(公告)号：US20050182227A1
公开(公告)日：2005-08-18
申请号：US11060544
申请日：2005-02-18
申请人： Kensuke Morita , Yutaka Adegawa
发明人： Kensuke Morita , Yutaka Adegawa
IPC分类号： C09D183/04 , G03C1/76 , H01L21/312
CPC分类号： H01L21/3124 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , Y10T428/31663
摘要： A composition for forming an insulating film comprising at least one of a compound represented by formula (I), a hydrolysate of the compound represented by formula (I) and a condensate of the compound represented by formula (I): wherein R1 to R7each independently represents an organic group, and R1 to R7 are the same or different. And an insulating film obtained by a process, the process comprising using the compound represented by formula (I) as a starting material.
摘要翻译：一种用于形成绝缘膜的组合物，其包含由式（I）表示的化合物，式（I）表示的化合物的水解产物和由式（I）表示的化合物的缩合物中的至少一种：其中R“ R 1至R 7各自独立地表示有机基团，R 1至R 7相同或不同。和通过该方法获得的绝缘膜，该方法包括使用由式（I）表示的化合物作为起始原料。

7. 发明授权

US07872164B2 Process for producing 4,9-dibromodiamantane 有权
标题翻译：生产4,9-二溴二聚烷烃的方法
公开(公告)号：US07872164B2
公开(公告)日：2011-01-18
申请号：US12440672
申请日：2007-09-25
申请人： Katsuyuki Watanabe , Kensuke Morita , Masaya Nakayama
发明人： Katsuyuki Watanabe , Kensuke Morita , Masaya Nakayama
IPC分类号： C07C17/093
CPC分类号： C07C17/10 , C07C23/46
摘要： A process for selectively producing 4,9-dibromodiamantane includes a step of reacting diamantane with bromine in the presence of a Lewis acid and a solvent, wherein the solvent comprises a substituted or unsubstituted, straight-chain, branched-chain or cyclic saturated hydrocarbon containing from 3 to 10 carbon atoms, and a reaction solution after the step satisfies Formula (1): A/(A+B+C+D+E)>0.80 Formula (1) wherein A represents an area ratio (%) of 4,9-dibromodiamantane obtained by gas chromatography of the reaction solution, B represents an area ratio of diamantane, C represents a sum of an area ratio of 1-bromodiamantane and an area ratio of 4-bromodiamantane, D represents an area ratio of tribromodiamantane, and E represents a sum of an area ratio of 1,6-dibromodiamantane and an area ratio of 1,4-dibromodiamantane.
摘要翻译：选择性生产4,9-二溴二聚烷烃的方法包括在路易斯酸和溶剂存在下使二金刚烷与溴反应的步骤，其中溶剂包括取代或未取代的直链，支链或环状饱和烃 3〜10个碳原子，后述的反应溶液满足式（1）：A /（A + B + C + D + E）> 0.80式（1）其中A表示面积比（％）为4 ，通过反应溶液的气相色谱法获得的9-二溴二聚烷烃，B表示金刚烷的面积比，C表示1-溴二胺的面积比和4-溴二胺的面积比的总和，D表示三溴二甲烷的面积比， E表示1,6-二溴二甲烷的面积比和1,4-二溴二聚烷的面积比之和。

8. 发明申请

US20100048962A1 PROCESS FOR PRODUCING 4,9-DIBROMODIAMANTANE 有权
标题翻译：生产4,9-二溴马来酸酐的方法
公开(公告)号：US20100048962A1
公开(公告)日：2010-02-25
申请号：US12440672
申请日：2007-09-25
申请人： Katsuyuki Watanabe , Kensuke Morita , Masaya Nakayama
发明人： Katsuyuki Watanabe , Kensuke Morita , Masaya Nakayama
IPC分类号： C07C17/10
CPC分类号： C07C17/10 , C07C23/46
摘要： A process for selectively producing 4,9-dibromodiamantane includes a step of reacting diamantane with bromine in the presence of a Lewis acid and a solvent, wherein the solvent comprises a substituted or unsubstituted, straight-chain, branched-chain or cyclic saturated hydrocarbon containing from 3 to 10 carbon atoms, and a reaction solution after the step satisfies Formula (1): A/(A+B+C+D+E)>0.80 Formula (1) wherein A represents an area ratio (%) of 4,9-dibromodiamantane obtained by gas chromatography of the reaction solution, B represents an area ratio of diamantane, C represents a sum of an area ratio of 1-bromodiamantane and an area ratio of 4-bromodiamantane, D represents an area ratio of tribromodiamantane, and E represents a sum of an area ratio of 1,6-dibromodiamantane and an area ratio of 1,4-dibromodiamantane.
摘要翻译：选择性生产4,9-二溴二聚烷烃的方法包括在路易斯酸和溶剂存在下使二金刚烷与溴反应的步骤，其中溶剂包括取代或未取代的直链，支链或环状饱和烃 3〜10个碳原子，后述的反应溶液满足式（1）：A /（A + B + C + D + E）> 0.80式（1）其中A表示面积比（％）为4 ，通过反应溶液的气相色谱法获得的9-二溴二聚烷烃，B表示金刚烷的面积比，C表示1-溴二胺的面积比和4-溴二胺的面积比的总和，D表示三溴二甲烷的面积比， E表示1,6-二溴二甲烷的面积比和1,4-二溴二聚烷的面积比之和。

9. 发明授权

US07799843B2 Film 有权
标题翻译：电影
公开(公告)号：US07799843B2
公开(公告)日：2010-09-21
申请号：US12392794
申请日：2009-02-25
申请人： Makoto Muramatsu , Akira Asano , Kensuke Morita
发明人： Makoto Muramatsu , Akira Asano , Kensuke Morita
IPC分类号： C08J3/28 , C08F30/08 , C08F38/00 , B32B27/00
CPC分类号： C09D183/04 , C08G77/045 , Y10S427/104 , Y10T428/31663
摘要： A file is formed by coating a substrate with a film-forming composition including a compound having an alicyclic hydrocarbon structure and irradiating the coated composition with microwaves having a frequency of 5.8 GHz. An insulating film is formed by irradiating a film including a compound having a siloxane structure with microwave having a frequency of 5.8 GHz. These films possess excellent film properties such as dielectric constant and mechanical strength.
摘要翻译：通过用包含具有脂环族烃结构的化合物的成膜组合物涂布基材形成文件，并用频率为5.8GHz的微波照射涂布的组合物。通过用频率为5.8GHz的微波照射包含具有硅氧烷结构的化合物的膜来形成绝缘膜。这些膜具有优异的膜性质，例如介电常数和机械强度。

10. 发明授权

US07772690B2 Insulating film 有权
标题翻译：绝缘膜
公开(公告)号：US07772690B2
公开(公告)日：2010-08-10
申请号：US12040988
申请日：2008-03-03
申请人： Kensuke Morita , Koji Wariishi , Akira Asano , Makoto Muramatsu
发明人： Kensuke Morita , Koji Wariishi , Akira Asano , Makoto Muramatsu
IPC分类号： H01L23/053 , H01L23/141
CPC分类号： H01L21/3122 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02348 , H01L21/02351 , H01L21/316 , H01L21/31695
摘要： An insulating film for semiconductor devices is obtained by curing, on a substrate, a high molecular compound obtained by polymerizing a cage-type silsesquioxane compound having two or more unsaturated groups as substituents and having a cyclic siloxane structure, wherein the structure of the cage-type silsesquioxane compound is not broken by curing, and the breakage of the cage structure can be detected by observing a peak at approximately 610 cm−1 in Raman spectrum of the film after curing.
摘要翻译：半导体器件用绝缘膜通过在基板上固化由具有两个以上不饱和基团作为取代基且具有环状硅氧烷结构的笼型倍半硅氧烷化合物而得到的高分子化合物，可以通过在固化后的膜的拉曼光谱中观察约610cm -1处的峰值来检测笼结构的断裂。

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