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1. 发明申请

US20080179289A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH A PLASMA STREAM 审中-公开
标题翻译：用等离子体流除去背面聚合物的方法
公开(公告)号：US20080179289A1
公开(公告)日：2008-07-31
申请号：US11685769
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at an edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a local plasma chamber from a polymer etch precursor gas. The process includes directing a localized stream of an etchant by-product from the first plasma onto a target portion of the backside of the workpiece, the target portion having a diameter corresponding to a diameter of the stream, while rotating the workpiece.
摘要翻译：提供了从工件的背面除去聚合物的方法。该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。该方法还包括将工件的边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界和一个含有背面的下部工艺区。在聚合物蚀刻前体气体的局部等离子体室中产生第一等离子体。该方法包括将来自第一等离子体的蚀刻剂副产物的局部流引导到工件的背面的目标部分上，目标部分具有对应于流的直径的直径，同时旋转工件。

2. 发明申请

US20080179008A1 REACTOR FOR WAFER BACKSIDE POLYMER REMOVAL USING AN ETCH PLASMA FEEDING A LOWER PROCESS ZONE AND A SCAVENGER PLASMA FEEDING AN UPPER PROCESS ZONE 审中-公开
标题翻译：使用等离子体等离子体进行离散聚合物的反应器下一个工艺区域和SCAVENGER等离子体进料上一个工艺区域
公开(公告)号：US20080179008A1
公开(公告)日：2008-07-31
申请号：US11685772
申请日：2007-03-14
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： H01L21/306
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber. An upper external plasma-generating chamber is coupled to introduce a plasma by-product into the upper process zone and a supply of a scavenger species precursor gas coupled to the upper external plasma-generating chamber.
摘要翻译：提供反应器用于从工件的背面去除聚合物。反应器包括具有天花板，地板和圆柱形侧壁的真空室。室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面向天花板。支撑装置离开被暴露的工件的背面的至少一个环形周边。约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上加工区和下加工区之间划分腔室的边界。真空泵联接到下部处理区。较低的外部等离子体发生室将等离子体副产物引入下部工艺区域中，并且提供耦合到下部外部等离子体产生室的聚合物蚀刻前体气体。耦合上部外部等离子体产生室以将等离子体副产物引入上部工艺区域中，并且供应与上部外部等离子体产生室耦合的清除剂物质前体气体。

3. 发明授权

US07552736B2 Process for wafer backside polymer removal with a ring of plasma under the wafer 失效
标题翻译：用晶片背面的等离子体环除去晶片背面聚合物的工艺
公开(公告)号：US07552736B2
公开(公告)日：2009-06-30
申请号：US11685775
申请日：2007-03-14
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.
摘要翻译：提供了从工件的背面除去聚合物的方法。该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界侧面和下部工艺区域，其中包含晶片背面。该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体工件的后边缘。

4. 发明授权

US06962644B2 Tandem etch chamber plasma processing system 有权
标题翻译：串联腐蚀室等离子体处理系统
公开(公告)号：US06962644B2
公开(公告)日：2005-11-08
申请号：US10241653
申请日：2002-09-10
申请人： Alexander Paterson , Valentin N. Todorov , Jon McChesney , Gerhard M. Schneider , David Palagashvili , John P. Holland , Michael S. Barnes
发明人： Alexander Paterson , Valentin N. Todorov , Jon McChesney , Gerhard M. Schneider , David Palagashvili , John P. Holland , Michael S. Barnes
IPC分类号： H01L21/00 , C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32458
摘要： A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.
摘要翻译：一种用于处理晶片的方法和装置，包括限定多个隔离处理区域的腔室。隔离处理区域具有上端和下端。所述室还包括多个等离子体产生装置，每个等离子体产生装置邻近每个隔离处理区域的上端设置，并且连接到每个等离子体产生装置的多个电源中的一个。多个电源的输出频率是相位和/或频率锁定在一起的。另外，腔室包括多个气体分配组件。每个气体分配组件设置在每个隔离的处理区域内。可移动的晶片支撑件设置在每个隔离的处理区域内以支撑用于等离子体处理的晶片。可移动晶片支撑件包括耦合到偏置电源的偏置电极，偏置电源被配置为控制等离子体离子朝向可移动晶片支撑件的轰击。

5. 发明授权

US07777152B2 High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck 有权
标题翻译：高AC电流高RF功率AC-RF去耦滤波器用于等离子体反应器加热静电卡盘
公开(公告)号：US07777152B2
公开(公告)日：2010-08-17
申请号：US11671927
申请日：2007-02-06
申请人： Valentin N. Todorov , Michael D. Willwerth , Alexander Paterson , Brian K. Hatcher , James E. Sammons, III , John P. Holland
发明人： Valentin N. Todorov , Michael D. Willwerth , Alexander Paterson , Brian K. Hatcher , James E. Sammons, III , John P. Holland
IPC分类号： B23K9/02 , H01P5/08 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32706 , H03H1/0007
摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.
摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中环形线圈的外径与每个信封的内径大致相同。直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围的相应的电感绕组，每个导体具有一个输入结束和输出结束。每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子的电阻加热元件。

6. 发明申请

US20070284344A1 HIGH AC CURRENT HIGH RF POWER AC-RF DECOUPLING FILTER FOR PLASMA REACTOR HEATED ELECTROSTATIC CHUCK 有权
标题翻译：用于等离子体反应器加热静电切割机的高交流电流高频功率AC-RF解码滤波器
公开(公告)号：US20070284344A1
公开(公告)日：2007-12-13
申请号：US11671927
申请日：2007-02-06
申请人： Valentin N. Todorov , Michael D. Willwerth , Alexander Paterson , Brian K. Hatcher , James E. Sammons , John P. Holland
发明人： Valentin N. Todorov , Michael D. Willwerth , Alexander Paterson , Brian K. Hatcher , James E. Sammons , John P. Holland
IPC分类号： B23K9/00
CPC分类号： H05H1/46 , H01J37/32706 , H03H1/0007
摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.
摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中环形线圈的外径与每个信封的内径大致相同。直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围内的相应的电感绕组，每个导体具有一个输入结束和输出结束。每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子的电阻加热元件。

7. 发明授权

US07718538B2 Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates 有权
标题翻译：具有用于蚀刻半导体衬底的脉冲样品偏置的脉冲等离子体系统
公开(公告)号：US07718538B2
公开(公告)日：2010-05-18
申请号：US11677472
申请日：2007-02-21
申请人： Tae Won Kim , Kyeong-Tae Lee , Alexander Paterson , Valentin N. Todorov , Shashank C. Deshmukh
发明人： Tae Won Kim , Kyeong-Tae Lee , Alexander Paterson , Valentin N. Todorov , Shashank C. Deshmukh
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32009 , H01L21/3065 , H01L21/32137
摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.
摘要翻译：描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。

8. 发明授权

US5801386A Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same 失效
标题翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法
公开(公告)号：US5801386A
公开(公告)日：1998-09-01
申请号：US653212
申请日：1996-05-28
申请人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
发明人： Valentin N. Todorov , Yoshi Tanase , Xue-Yu Qian , Arthur H. Sato , Peter Loewenhardt , Yan Ye , Shaoher X. Pan , Dragan Podlesnik
IPC分类号： H01J37/32 , H01J37/244
CPC分类号： H01J37/32935
摘要： Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.
摘要翻译：用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法。该装置包含第一绝缘体层，通过图案化和蚀刻铜层压体而形成一个或多个导电集电极焊盘。每个集电极焊盘连接到从每个集电极焊盘延伸到第一绝缘体层的边缘的导电引线（例如印刷电路迹线）。第二绝缘体层位于第一绝缘体层之上，使得集电极焊盘及其相应的引线夹在两个绝缘体层之间。使用粘合剂将第二绝缘体固定到第一绝缘体和集电板。集电极焊盘通过由第二绝缘体层限定的孔暴露于等离子体。

9. 发明申请

US20080206483A1 PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION 有权
标题翻译：通过调整等离子体分配的气体分配板进行电感耦合等离子体处理
公开(公告)号：US20080206483A1
公开(公告)日：2008-08-28
申请号：US11679122
申请日：2007-02-26
申请人： ALEXANDER PATERSON , Valentin N. Todorov , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond , John P. Holland
发明人： ALEXANDER PATERSON , Valentin N. Todorov , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond , John P. Holland
IPC分类号： H05H1/00
CPC分类号： H01J37/32082 , C23C16/505 , H01J37/32091 , H01J37/321 , H01J37/3244
摘要： A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power.
摘要翻译：一种在等离子体反应器的腔室中处理工件的方法，该等离子体反应器具有通过天花板中的气体分配板将工艺气体引入室中，该顶板覆盖工件。通过将气体流从第一气体输入分配到延伸穿过气体分配板的歧管的多个气体分配孔，并将气体流从多个气体分配孔中的每一个分配到多个气体喷射孔中，从而引入气体气体分配板。该方法还包括将气体分配板中的气流限制在具有小于完整圆的对称轴的弧形长度的路径上。该方法还包括通过气体分布将等离子体源功率电容和电感耦合到腔室中。该方法还包括通过调节电容耦合VHF功率和电感耦合功率的量之间的比例来调节处理区域中的等离子体离子密度径向分布。

10. 发明授权

US06447636B1 Plasma reactor with dynamic RF inductive and capacitive coupling control 失效
标题翻译：具有动态RF感应和电容耦合控制的等离子体电抗器
公开(公告)号：US06447636B1
公开(公告)日：2002-09-10
申请号：US09505578
申请日：2000-02-16
申请人： Xue-Yu Qian , Zhi-Wen Sun , Maocheng Li , John Holland , Arthur H. Sato , Valentin N. Todorov , Patrick L. Leahey , Robert E. Ryan
发明人： Xue-Yu Qian , Zhi-Wen Sun , Maocheng Li , John Holland , Arthur H. Sato , Valentin N. Todorov , Patrick L. Leahey , Robert E. Ryan
IPC分类号： H05H100
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/3299 , H05H1/46
摘要： The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is disposed adjacent the chamber for inductively coupling RF energy into the chamber. An electrode is disposed adjacent the chamber and has a voltage for capacitively coupling energy into the chamber. The electrode is spaced from the substrate support and the RF coil. An electrode adjusting member is coupled with the electrode for dynamically adjusting the voltage in the electrode to vary the capacitive coupling for improved plasma ignition and plasma stability. A Faraday shield may be placed between the RF coil and the plasma process region in the chamber to suppress capacitive coupling of the RF coil. Sensors may be provided to monitor the amounts of inductive coupling and capacitive coupling to provide feedback to a controller which is used to adjust the inductive coupling and capacitive coupling in real time to stabilize the plasma and achieve improved processing.
摘要翻译：本发明提供了用于动态RF感应和电容耦合控制以改善等离子体基板处理以及实现污染和缺陷减少的系统和方法。等离子体反应器包括设置在室中的基板支撑件。射频线圈邻近该腔室设置，用于将射频能量感应耦合到腔室中。电极邻近该腔室设置并且具有用于将能量电容耦合到腔室中的电压。电极与衬底支架和RF线圈间隔开。电极调节构件与电极耦合以动态地调节电极中的电压，以改变电容耦合以改善等离子体点火和等离子体稳定性。法拉第屏蔽可以放置在RF线圈和腔室中的等离子体处理区域之间，以抑制RF线圈的电容耦合。可以提供传感器来监测电感耦合和电容耦合的量以向控制器提供反馈，该控制器用于实时调整电感耦合和电容耦合以稳定等离子体并实现改进的处理。

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