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    • 2. 发明授权
    • Method and apparatus for high reliability data storage and retrieval operations in multi-level flash cells
    • 用于多级闪存单元中高可靠性数据存储和检索操作的方法和装置
    • US07941592B2
    • 2011-05-10
    • US12228795
    • 2008-08-14
    • Randy M. BonellaDaniel J. AllenThomas J. HolmanChung W. LamHiroyuki Sakamoto
    • Randy M. BonellaDaniel J. AllenThomas J. HolmanChung W. LamHiroyuki Sakamoto
    • G06F12/00
    • G11C11/5628G11C2211/5641
    • One or more multi-level NAND flash cells are operated so as to store only single-level data, and these operations achieve an increased level of charge separation between the data states of the single-level operation by requiring a write to both the upper and lower pages, even though only one bit of data is being stored. That is, the second write operation increases the difference in floating gate charge between the erased state and the programmed state of the first write operation without changing the data in the flash memory cell. In one embodiment, a controller instructs the flash memory to perform two write operations for storing a single bit of data in an MLC flash cell. In another embodiment, the flash memory recognizes that a single write operation is directed a high reliability memory area and internally generates the required plurality of programming steps to place at least a predetermined amount of charge on the specified floating gate.
    • 操作一个或多个多电平NAND闪存单元以仅存储单级数据,并且这些操作通过要求写入上层和第二级的单级操作来实现单级操作的数据状态之间的电荷分离水平的提高 即使只有一位数据被存储,也是较低的页面。 也就是说,第二写入操作增加擦除状态和第一写操作的编程状态之间的浮栅电荷的差异,而不改变闪存单元中的数据。 在一个实施例中,控制器指示闪速存储器执行用于在MLC闪存单元中存储单个数据位的两个写入操作。 在另一个实施例中,闪速存储器识别出单个写入操作被引导到高可靠性存储区域,并且在内部产生所需的多个编程步骤以将至少预定量的电荷放置在指定的浮动栅极上。