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    • 4. 发明申请
    • Dry Etching Gas and Method of Dry Etching
    • 干蚀刻气体和干蚀刻方法
    • US20080274334A1
    • 2008-11-06
    • US11628014
    • 2005-05-30
    • Akira SekiyaTatsuya SugimotoToshiro YamadaTakanobu Mase
    • Akira SekiyaTatsuya SugimotoToshiro YamadaTakanobu Mase
    • C09K13/00H01L21/306B32B3/00
    • H01L21/31116C07C41/18C07C43/17C07C45/513C07C45/673C07C45/82C07C49/227C07C2601/04C07F9/5352Y10T428/24479C07C49/687
    • A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O2, O3, CO, CO2, CHF3, CH2F2, CF4, C2F6, and C3F8; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma. The dry etching gases can be safely used, are reduced in influence on the global environment, and can highly selectively dry-etch a semiconductor material at a high dry etching rate to form a satisfactory pattern shape. The dry etching method employs either of these dry etching gases.
    • 一种干蚀刻气体,其包含在分子中具有醚键或羰基和一个或多个氟原子的C 4-6二氟化合物,其仅由碳,氟和氧原子构成,并且在 氟原子数与碳原子数的比例(F / C)为1.9以下(前提是该化合物既不是具有一个环醚键的氟化合物,也不是一个碳 - 碳双键,也不是饱和氟 具有一个羰基的化合物); 包括干蚀刻气体和至少一种选自稀有气体O 2,O 3,CO,CO 2的气体的混合干蚀刻气体, CH 2,CH 2,CH 2,CH 2,CF 4,C 2, F 6,和C 3 F 8; 以及干蚀刻方法,其包括将这些干蚀刻气体中的任一种转化为等离子体并用等离子体处理半导体材料。 可以安全地使用干蚀刻气体,减小对全局环境的影响,并且可以以高干蚀刻速率高度选择性地干蚀刻半导体材料以形成令人满意的图案形状。 干蚀刻方法采用这些干蚀刻气体中的任一种。
    • 5. 发明授权
    • Process for the preparation of fluorinated olefin
    • 氟化烯烃的制备方法
    • US06211420B1
    • 2001-04-03
    • US09180627
    • 1998-11-13
    • Akira SekiyaToshiro YamadaMitsuru Sugawara
    • Akira SekiyaToshiro YamadaMitsuru Sugawara
    • C07C1720
    • C07C23/08C07C17/206C07C17/208C07C17/383
    • In a process for preparing a fluorinated olefin having a carbon—carbon double bond, the carbon atoms of which have a fluorine atom, by reacting a halogenated olefin having at least one carbon—carbon double bond, a carbon atom or the carbon atoms of which bond have a chlorine atom or atoms bound thereto, and, in which the carbon atom or atoms with a single bond in the molecule have no halogen atom other than a fluorine atom, with an alkali metal fluoride, said reaction of the halogenated olefin with the alkali metal fluoride is conducted in the presence of an organic halogen-containing compound having a carbon—carbon single bond, a carbon or the carbons of which have at least one halogen atom other than fluorine atom.
    • 在通过使具有至少一个碳 - 碳双键的卤代烯烃,碳原子或碳原子的碳原子与碳原子一起形成碳原子的碳 - 碳双键的氟代烯烃的方法中,其碳原子具有氟原子 键具有与其结合的氯原子或原子,并且其中分子中具有单键的碳原子或原子不具有氟原子的卤素原子与碱金属氟化物反应,卤代烯烃与 碱金属氟化物在具有碳 - 碳单键的有机含卤素化合物,碳或碳具有至少一个除氟原子以外的卤素原子的存在下进行。
    • 6. 发明申请
    • PROCESS FOR PRODUCTION OF CARBONYL FLUORIDE
    • 碳氟化物生产工艺
    • US20100191013A1
    • 2010-07-29
    • US12067243
    • 2006-09-26
    • Heng-dao QuanMasanori TamuraAkira Sekiya
    • Heng-dao QuanMasanori TamuraAkira Sekiya
    • C07C51/58C07C21/185
    • C01B32/80
    • The present invention provides a method for inexpensively, efficiently, safely, and continuously producing COF2, without using highly toxic raw materials such as phosgene or difficult-to-get raw materials, with no risk of explosion or the like. Tetrafluoroethylene gas and oxygen gas are introduced into a reactor, and they are then heated in a gas phase in the absence of nitrogen gas for reaction, so as to produce carbonyl fluoride. The reactor is preferably a tubular reaction tube. As such tetrafluoroethylene gas, unpurified or purified tetrafluoroethylene gas obtained by heating HCFC-22 gas for thermal decomposition can be used. According to the present invention, COF2 that is useful as cleaning gas for CVD devices (chemical vapor deposition method) can be inexpensively, efficiently, and safely produced.
    • 本发明提供了一种廉价,有效,安全,连续地生产COF2的方法,而不使用高毒性的原料如光气或难以获得的原料,不会有爆炸等危险。 将四氟乙烯气体和氧气引入反应器中,然后在不存在氮气的气相中加热反应,以产生碳酰氟。 反应器优选为管式反应管。 作为这样的四氟乙烯气体,可以使用通过加热用于热分解的HCFC-22气体获得的未纯化或纯化的四氟乙烯气体。 根据本发明,可以廉价,高效,安全地制造用作CVD装置的清洁气体(化学气相沉积法)的COF 2。