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1. 发明授权

US07829445B2 Method of manufacturing a flash memory device 有权
标题翻译：制造闪存装置的方法
公开(公告)号：US07829445B2
公开(公告)日：2010-11-09
申请号：US12289301
申请日：2008-10-24
申请人： Tae-Whan Kim , Jae-Hun Jung , Jae-Won Shin , Jeong-Yong Lee
发明人： Tae-Whan Kim , Jae-Hun Jung , Jae-Won Shin , Jeong-Yong Lee
IPC分类号： H01L21/20
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L29/42348 , Y10S977/721 , Y10S977/773
摘要： Provided may be a method of fabricating a flash memory device having metal nano particles. The method of manufacturing a flash memory device may include forming a metal oxide thin layer on a semiconductor substrate, forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process on the semiconductor substrate where the metal oxide thin layer is formed, and forming metal nano particles in the floating gate by projecting an electron beam on the floating gate, the metal nano particles being surrounded by a silicon oxide layer.
摘要翻译：提供制造具有金属纳米颗粒的闪速存储器件的方法。制造闪速存储器件的方法可以包括在半导体衬底上形成金属氧化物薄层，通过在半导体衬底上进行热处理工艺形成非晶金属氧化硅薄层的浮栅，其中金属氧化物薄层为通过在浮动栅极上投射电子束，在浮栅中形成金属纳米粒子，金属纳米粒子被氧化硅层包围。

2. 发明申请

US20100105178A1 Method of manufacturing a flash memeory device 有权
标题翻译：制造闪存器件的方法
公开(公告)号：US20100105178A1
公开(公告)日：2010-04-29
申请号：US12289301
申请日：2008-10-24
申请人： Tae-Whan Kim , Jae-Hun Jung , Jae-Won Shin , Jeong-Yong Lee
发明人： Tae-Whan Kim , Jae-Hun Jung , Jae-Won Shin , Jeong-Yong Lee
IPC分类号： H01L29/788
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L29/42348 , Y10S977/721 , Y10S977/773
摘要： Provided may be a method of fabricating a flash memory device having metal nano particles. The method of manufacturing a flash memory device may include forming a metal oxide thin layer on a semiconductor substrate, forming a floating gate of an amorphous metal silicon oxide thin layer by performing a thermal treatment process on the semiconductor substrate where the metal oxide thin layer is formed, and forming metal nano particles in the floating gate by projecting an electron beam on the floating gate, the metal nano particles being surrounded by a silicon oxide layer.
摘要翻译：提供制造具有金属纳米颗粒的闪速存储器件的方法。制造闪速存储器件的方法可以包括在半导体衬底上形成金属氧化物薄层，通过在半导体衬底上进行热处理工艺形成非晶金属氧化硅薄层的浮栅，其中金属氧化物薄层为通过在浮动栅极上投射电子束，在浮栅中形成金属纳米粒子，金属纳米粒子被氧化硅层包围。

3. 发明申请

US20120161106A1 PHOTODETECTOR USING A GRAPHENE THIN FILM AND NANOPARTICLES, AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：使用石墨薄膜和纳米颗粒的光电转换器及其制造方法
公开(公告)号：US20120161106A1
公开(公告)日：2012-06-28
申请号：US13392176
申请日：2010-08-24
申请人： Tae-Whan Kim , Jae-Hun Jung , Dong-Ick Son , Jung-Min Lee , Hee-Yeon Yang , Won-Il Park
发明人： Tae-Whan Kim , Jae-Hun Jung , Dong-Ick Son , Jung-Min Lee , Hee-Yeon Yang , Won-Il Park
IPC分类号： H01L31/0256
CPC分类号： H01L31/035209 , H01L31/112 , H01L51/428
摘要： Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.
摘要翻译：提供了使用石墨烯薄膜和纳米颗粒的光电检测器（PD）及其制造方法。 PD包括具有通过使用气相碳（C）源的石墨烯沉积方法和形成在石墨烯薄膜上的纳米颗粒层形成的片状的石墨烯薄膜，并且被图案化以限定石墨烯薄膜的电极区域膜，纳米颗粒层由不含基质材料的纳米颗粒形成。 PD具有使用石墨烯薄膜作为通道和电极的平面结构，并且使用纳米颗粒作为光伏材料（由于由紫外（UV）光引起的光电子运动能力而能够形成电子 - 空穴对）。由于PD具有非常简单的结构，所以可以以低成本，高生产率制造PD。此外，PD包括石墨烯薄膜以降低功耗。

4. 发明授权

US09059345B2 Solar cell using p-i-n nanowire 有权
标题翻译：太阳能电池使用p-i-n纳米线
公开(公告)号：US09059345B2
公开(公告)日：2015-06-16
申请号：US13382134
申请日：2010-07-06
申请人： Tae-Whan Kim , Joo-Hyung You , Jae-Hun Jung , Jae-Seok Yi , Won-Il Park
发明人： Tae-Whan Kim , Joo-Hyung You , Jae-Hun Jung , Jae-Seok Yi , Won-Il Park
IPC分类号： H01L31/0352
CPC分类号： H01L31/03529 , H01L31/035281 , Y02E10/50
摘要： A solar cell using a p-i-n nanowire that may generate light by absorbing solar light in a wide wavelength region efficiently without generating light loss and may be manufactured with a simplified process and low cost. The solar cell includes: a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer including a semiconductor structure including a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer includes an n-type semiconductor material, or the semiconductor material that is used for forming the shell-nanowire includes a p-type semiconductor material, and the semiconductor material that is used for forming the semiconductor layer includes a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire includes an n-type semiconductor material.
摘要翻译：使用p-i-n纳米线的太阳能电池，其可以通过在宽波长区域中有效吸收太阳光而不产生光损耗而产生光，并且可以以简化的工艺和低成本制造。太阳能电池包括：由半导体材料形成的半导体层; 以及包含半导体结构的光电动势层，所述半导体结构包括在所述半导体层的向上方向上延伸并且由本征半导体材料形成的核 - 纳米线，并且形成为包围所述核 - 纳米线的周围的壳 - 纳米线并且由半导体材料形成，其中用于形成半导体层的半导体材料包括n型半导体材料或用于形成壳 - 纳米线的半导体材料包括p型半导体材料，以及用于形成半导体层的半导体材料包括p型半导体材料，用于形成壳 - 纳米线的半导体材料包括n型半导体材料。

5. 发明申请

US20110041980A1 ELECTRONIC DEVICE UTILIZING GRAPHENE ELECTRODES AND OGRANIC/INORGANIC HYBRID COMPOSITES AND METHOD OF MANUFACTURING THE ELECTRONIC DEVICE 有权
标题翻译：使用石墨电极的电子器件和欧洲/无机混合复合材料及其制造电子器件的方法
公开(公告)号：US20110041980A1
公开(公告)日：2011-02-24
申请号：US12860553
申请日：2010-08-20
申请人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Hee-Yeon Yang , Jung-Min Lee , Jae-Hun Jung
发明人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Hee-Yeon Yang , Jung-Min Lee , Jae-Hun Jung
IPC分类号： H01B13/00
CPC分类号： H01L51/441 , H01L51/0037 , H01L51/4233 , H01L51/428 , H01L2251/308 , Y02E10/549 , Y02P70/521 , Y10T156/10
摘要： Example embodiments are directed to an electronic device and a method for manufacturing the same. The electronic device includes a polymer thin film and an electrode. The polymer thin film includes nanoparticles. The electrode is formed by attaching a graphene thin film of a sheet shape formed through graphene deposition using a vapor carbon supply source to the polymer thin film. In the method, a graphene thin film of a sheet shape is formed through graphene deposition using a vapor carbon supply source. A polymer solution with distributed nanoparticles is prepared. The polymer solution with distributed nanoparticles is spin-coated on a substrate. A polymer thin film comprising the nanoparticles is formed by drying the spin-coated polymer solution. An electrode is formed by attaching the graphene thin film onto the polymer thin film.
摘要翻译：示例性实施例涉及电子设备及其制造方法。电子设备包括聚合物薄膜和电极。聚合物薄膜包括纳米颗粒。通过使用蒸气碳供应源将通过石墨烯沉积形成的片状的石墨烯薄膜附着到聚合物薄膜上而形成电极。在该方法中，使用蒸气碳供应源通过石墨烯沉积形成片状石墨烯薄膜。制备了具有分散纳米颗粒的聚合物溶液。将具有分散纳米颗粒的聚合物溶液旋涂在基材上。通过干燥旋涂聚合物溶液形成包含纳米颗粒的聚合物薄膜。通过将石墨烯薄膜附着在聚合物薄膜上形成电极。

6. 发明授权

US07858978B2 Nonvolatile organic bistable memory device and method of manufacturing the same 有权
标题翻译：非挥发性有机双稳态存储器件及其制造方法
公开(公告)号：US07858978B2
公开(公告)日：2010-12-28
申请号：US12326936
申请日：2008-12-03
申请人： Tae-Whan Kim , Fushan Li , Young-Ho Kim , Jae-Hun Jung
发明人： Tae-Whan Kim , Fushan Li , Young-Ho Kim , Jae-Hun Jung
IPC分类号： H01L51/10 , H01L51/30
CPC分类号： H01L51/0591 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C13/025 , G11C2213/15 , G11C2213/55 , H01L51/0046 , H01L2251/305 , Y10S977/735 , Y10S977/742 , Y10S977/779 , Y10S977/785 , Y10S977/943
摘要： A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes.
摘要翻译：非易失性有机双稳态存储器件包括衬底，设置在衬底上的下电极，设置在下电极上的下电荷注入层，包含设置在下电荷注入层上的纳米颗粒的绝缘聚合物层，上电荷注入层，绝缘聚合物层和设置在上电荷注入层上的上电极。下电荷注入层和上电荷注入层各自包括富勒烯和/或碳纳米管。

7. 发明申请

US20070034933A1 Flash memory device utilizing nanocrystals embedded in polymer 有权
标题翻译：闪存器件利用嵌入聚合物的纳米晶体
公开(公告)号：US20070034933A1
公开(公告)日：2007-02-15
申请号：US11540991
申请日：2006-09-28
申请人： Tae-Whan Kim , Young-Ho Kim , Chong-Seung Yoon , Jae-Ho Kim , Jae-Hun Jung , Sung-Keun Lim , Mun-Seop Song
发明人： Tae-Whan Kim , Young-Ho Kim , Chong-Seung Yoon , Jae-Ho Kim , Jae-Hun Jung , Sung-Keun Lim , Mun-Seop Song
IPC分类号： H01L29/76
CPC分类号： H01L29/7881 , B82Y10/00 , H01L21/28273 , H01L29/42332 , Y10S977/773 , Y10S977/777 , Y10S977/779 , Y10S977/943
摘要： A flash memory device with a nanoscale floating gate and a method of manufacturing thereof are disclosed. At least one embodiment of the present invention provides a much simpler and easier method of manufacturing nanocrystals (or nanocrystallines) for the flash memory device than the conventional method. Since the nanocrystals are homogeneously dispersed as a polymer layer without agglomeration, size and density of the nanoparticles may be controlled. Additionally, one embodiment of the present invention provides memory devices with nanoscale floating gates, and related methods of manufacture, of high efficiency and cost effectiveness by employing electrically and chemically more stable nanosacle floating gates compared to conventional ones.
摘要翻译：公开了一种具有纳米级浮动栅极的闪存器件及其制造方法。本发明的至少一个实施例提供了制造用于闪速存储器件的纳米晶体（或纳米晶体）的方法比常规方法简单和容易的方法。由于纳米晶体作为聚合物层均匀分散而没有附聚，因此可以控制纳米颗粒的尺寸和密度。此外，本发明的一个实施例通过采用电化学和化学更稳定的纳米级浮动栅极提供具有纳米级浮动栅极的存储器件以及相关的制造方法，其具有高效率和成本效益。

8. 发明授权

US08641915B2 Electronic device utilizing graphene electrodes and organic/inorganic hybrid composites and method of manufacturing the electronic device 有权
标题翻译：利用石墨烯电极和有机/无机混合复合材料的电子器件及其制造方法
公开(公告)号：US08641915B2
公开(公告)日：2014-02-04
申请号：US12860553
申请日：2010-08-20
申请人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Hee-Yeon Yang , Jung-Min Lee , Jae-Hun Jung
发明人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Hee-Yeon Yang , Jung-Min Lee , Jae-Hun Jung
IPC分类号： B44C1/22
CPC分类号： H01L51/441 , H01L51/0037 , H01L51/4233 , H01L51/428 , H01L2251/308 , Y02E10/549 , Y02P70/521 , Y10T156/10
摘要： Example embodiments are directed to an electronic device and a method for manufacturing the same. The electronic device includes a polymer thin film and an electrode. The polymer thin film includes nanoparticles. The electrode is formed by attaching a graphene thin film of a sheet shape formed through graphene deposition using a vapor carbon supply source to the polymer thin film. In the method, a graphene thin film of a sheet shape is formed through graphene deposition using a vapor carbon supply source. A polymer solution with distributed nanoparticles is prepared. The polymer solution with distributed nanoparticles is spin-coated on a substrate. A polymer thin film comprising the nanoparticles is formed by drying the spin-coated polymer solution. An electrode is formed by attaching the graphene thin film onto the polymer thin film.
摘要翻译：示例性实施例涉及电子设备及其制造方法。电子设备包括聚合物薄膜和电极。聚合物薄膜包括纳米颗粒。通过使用蒸气碳供应源将通过石墨烯沉积形成的片状石墨烯薄膜附着到聚合物薄膜上而形成电极。在该方法中，使用蒸气碳供应源通过石墨烯沉积形成片状石墨烯薄膜。制备了具有分散纳米颗粒的聚合物溶液。将具有分散纳米颗粒的聚合物溶液旋涂在基材上。通过干燥旋涂聚合物溶液形成包含纳米颗粒的聚合物薄膜。通过将石墨烯薄膜附着在聚合物薄膜上形成电极。

9. 发明授权

US08598568B2 Photodetector using a graphene thin film and nanoparticles, and method for producing the same 有权
标题翻译：使用石墨烯薄膜和纳米颗粒的光电检测器及其制造方法
公开(公告)号：US08598568B2
公开(公告)日：2013-12-03
申请号：US13392176
申请日：2010-08-24
申请人： Tae-Whan Kim , Jae-Hun Jung , Dong-Ick Son , Jung-Min Lee , Hee-Yeon Yang , Won-Il Park
发明人： Tae-Whan Kim , Jae-Hun Jung , Dong-Ick Son , Jung-Min Lee , Hee-Yeon Yang , Won-Il Park
IPC分类号： H01L31/0256
CPC分类号： H01L31/035209 , H01L31/112 , H01L51/428
摘要： Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.
摘要翻译：提供了使用石墨烯薄膜和纳米颗粒的光电检测器（PD）及其制造方法。 PD包括具有通过使用气相碳（C）源的石墨烯沉积方法和形成在石墨烯薄膜上的纳米颗粒层形成的片状的石墨烯薄膜，并且被图案化以限定石墨烯薄膜的电极区域膜，纳米颗粒层由不含基质材料的纳米颗粒形成。 PD具有使用石墨烯薄膜作为通道和电极的平面结构，并且使用纳米颗粒作为光伏材料（由于由紫外（UV）光引起的光电子运动能力而能够形成电子 - 空穴对）。由于PD具有非常简单的结构，所以可以以低成本，高生产率制造PD。此外，PD包括石墨烯薄膜以降低功耗。

10. 发明授权

US08735895B2 Electronic device including graphene thin film and methods of fabricating the same 有权
标题翻译：包括石墨烯薄膜的电子器件及其制造方法
公开(公告)号：US08735895B2
公开(公告)日：2014-05-27
申请号：US12902783
申请日：2010-10-12
申请人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Jae-Ho Shim , Jung-Min Lee , Jae-Hun Jung
发明人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Jae-Ho Shim , Jung-Min Lee , Jae-Hun Jung
IPC分类号： H01L29/10
CPC分类号： H01L29/78684 , H01L51/0045 , H01L51/0529 , H01L51/0591
摘要： Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.
摘要翻译：提供一种电子器件及其制造方法，电子器件包括器件衬底，堆叠结构和电极。层叠结构包括在第一绝缘体和第二绝缘体之间的石墨烯薄膜。电极设置在层叠结构之上。

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