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1. 发明申请

US20170022629A1 METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL 审中-公开
标题翻译：硝酸钾晶体生产方法
公开(公告)号：US20170022629A1
公开(公告)日：2017-01-26
申请号：US15124794
申请日：2014-11-27
申请人： Takashi SATOH , Seiji SARAYAMA , Masahiro HAYASHI , Naoya MIYOSHI , Chiharu KIMURA , Junichi WADA
发明人： Takashi SATOH , Seiji SARAYAMA , Masahiro HAYASHI , Naoya MIYOSHI , Chiharu KIMURA , Junichi WADA
IPC分类号： C30B9/10 , C30B29/40
CPC分类号： C30B9/10 , C30B9/12 , C30B29/406 , C30B35/007
摘要： A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.
摘要翻译：制造氮化镓晶体的方法包括通过将氮溶解在包含镓和钠的混合熔体中来生长氮化镓晶体5，并且通过使合金51和合金51反应而收集从包含镓和钠的合金51中分离的镓55 使钠离子并从合金中分离钠离子和镓55的液体52。

2. 发明申请

US20130243680A1 GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE 审中-公开
标题翻译：第13组氮化物晶体和第13组氮化物晶体基板
公开(公告)号：US20130243680A1
公开(公告)日：2013-09-19
申请号：US13798702
申请日：2013-03-13
申请人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Chiharu KIMURA , Naoya MIYOSHI , Akishige MURAKAMI , Junichi WADA
发明人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Chiharu KIMURA , Naoya MIYOSHI , Akishige MURAKAMI , Junichi WADA
IPC分类号： C01B21/064 , C01B21/06
CPC分类号： C01B21/064 , C01B21/0632 , C30B9/06 , C30B29/403 , C30B29/406
摘要： A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane.
摘要翻译： 13族氮化物晶体具有包含氮原子的六方晶系结构和选自B，Al，Ga，In和Tl中的至少一种类型的金属原子。 13族氮化物晶体在多个方向上具有基面位错。基面位错的位错密度高于c面穿透位错的位错密度。

3. 发明申请

US20130061799A1 MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL 有权
标题翻译： 13号硝酸盐晶体的制造方法
公开(公告)号：US20130061799A1
公开(公告)日：2013-03-14
申请号：US13592555
申请日：2012-08-23
申请人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Hiroshi NAMBU , Chiharu KIMURA , Naoya MIYOSHI
发明人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Hiroshi NAMBU , Chiharu KIMURA , Naoya MIYOSHI
IPC分类号： C30B19/02
CPC分类号： C30B9/12 , C30B9/10 , C30B29/406
摘要： A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.
摘要翻译：制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺，其中 c轴方向的长度L为9.7mm以上，c面的长度L与晶体直径d的比L / d大于0.813。晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺，并且形成含有{ 0001}面。

4. 发明申请

US20170204534A1 GROUP 13 NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL, AND GALLIUM NITRIDE CRYSTAL 审中-公开
公开(公告)号：US20170204534A1
公开(公告)日：2017-07-20
申请号：US15455339
申请日：2017-03-10
申请人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Hiroshi NAMBU , Chiharu KIMURA , Naoya MIYOSHI
发明人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Hiroshi NAMBU , Chiharu KIMURA , Naoya MIYOSHI
IPC分类号： C30B29/40 , H01L33/32 , H01L33/16 , C30B9/12
CPC分类号： C30B29/406 , C30B9/12 , H01L33/16 , H01L33/32
摘要： A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.

5. 发明申请

US20130064749A1 GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE 有权
标题翻译：第13组氮化物晶体和第13组氮化物晶体基板
公开(公告)号：US20130064749A1
公开(公告)日：2013-03-14
申请号：US13609077
申请日：2012-09-10
申请人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Hiroshi NAMBU , Chiharu KIMURA , Naoya MIYOSHI
发明人： Masahiro HAYASHI , Seiji SARAYAMA , Takashi SATOH , Hiroshi NAMBU , Chiharu KIMURA , Naoya MIYOSHI
IPC分类号： C01B21/06 , C01B21/072 , C01B21/064
CPC分类号： C30B7/105 , C30B9/00 , C30B29/403 , C30B29/406 , C30B29/607
摘要： A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.
摘要翻译：具有六方晶系结构并且至少包含氮原子和至少一个选自B，Al，Ga，In和Tl的金属原子的13族氮化物晶体。 13族氮化物晶体包括设置在与c轴交叉的横截面的内侧的第一区域，设置在截面最外侧的第三区域，并且具有与第一区域不同的晶体特性，所述第二区域至少部分地设置在所述第一区域和所述第三区域之间，所述第二区域是晶体生长的过渡区域，并且具有与所述第一区域和所述第三区域不同的晶体特性。

6. 发明申请

US20160348272A1 METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL 审中-公开
标题翻译： 13号硝酸盐晶体和13号硝酸盐晶体的制备方法
公开(公告)号：US20160348272A1
公开(公告)日：2016-12-01
申请号：US15115154
申请日：2015-02-19
申请人： Masahiro HAYASHI , Takashi SATOH , Naoya MIYOSHI , Junichi Wada , Seiji SARAYAMA
发明人： Masahiro HAYASHI , Takashi SATOH , Naoya MIYOSHI , Junichi Wada , Seiji SARAYAMA
IPC分类号： C30B19/06 , C30B29/68 , C30B9/12 , C30B29/40 , C30B19/02 , C30B19/12
CPC分类号： C30B19/066 , C30B9/10 , C30B9/12 , C30B19/02 , C30B19/06 , C30B19/12 , C30B29/406 , C30B29/68 , H01L21/0245 , H01L21/0254 , H01L21/02625 , H01L33/0075
摘要： In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of Al2O3. An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal.
摘要翻译：在13族氮化物晶体的制造方法中，将由13族氮化物晶体构成的晶种配置在含有碱金属和13族元素的混合熔体中，向混合熔体供给氮以使第13族生长氮化物晶体在晶种的主平面上。晶种通过气相外延制造。在容纳混合熔体的反应容器中与接触构件接触的至少一部分由Al 2 O 3制成。在晶种和生长氮化物晶体之间形成有具有比生长组13氮化物晶体的发光发光峰的波长长的光致发光峰的界面层。

7. 发明申请

US20160177468A1 METHOD AND APPARATUS FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL 审中-公开
标题翻译：制造13号硝酸盐晶体的方法和装置
公开(公告)号：US20160177468A1
公开(公告)日：2016-06-23
申请号：US14910453
申请日：2014-08-05
申请人： Takashi SATOH , Seiji SARAYAMA , Masahiro HAYASHI , Junichi WADA
发明人： Takashi SATOH , Seiji SARAYAMA , Masahiro HAYASHI , Junichi WADA
IPC分类号： C30B9/00 , C30B29/40
CPC分类号： C30B9/00 , C30B9/10 , C30B19/02 , C30B19/06 , C30B19/068 , C30B29/406
摘要： A method is for manufacturing a group 13 nitride crystal by a flux method. The method includes: placing a seed crystal and a mixed melt that contains an alkali metal or an alkali-earth metal and a group 13 element in a reaction vessel; and rotating the reaction vessel to stir the mixed melt. The reaction vessel includes a structure to stir the mixed melt. More than one seed crystals are installed point-symmetrically with respect to a central axis of the reaction vessel at positions other than the central axis such that a c plane of each of the seed crystals is substantially parallel to a bottom of the reaction vessel. The structure is installed point-symmetrically with respect to the central axis at at least part of the reaction vessel other than the central axis.
摘要翻译：一种用于通过助熔剂法制造氮化镓族13族的方法。该方法包括：将含有碱金属或碱土金属和13族元素的晶种和混合熔体放置在反应容器中; 并旋转反应容器以搅拌混合的熔体。反应容器包括搅拌混合熔体的结构。在除中心轴以外的位置处，相对于反应容器的中心轴点对称地安装了多于一个晶种，使得每个晶种的c面大致平行于反应容器的底部。该结构在反应容器的至少一部分而不是中心轴线处相对于中心轴线点对称地安装。

8. 发明申请

US20160168747A1 APPARATUS AND METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL 审中-公开
标题翻译：用于制造13号硝酸盐晶体的装置和方法
公开(公告)号：US20160168747A1
公开(公告)日：2016-06-16
申请号：US14907887
申请日：2014-08-05
申请人： Yusuke MORI , Takashi SATOH , Masahiro HAYASHI , Seiji SARAYAMA , Yoshikazu KATO
发明人： Takashi SATOH , Masahiro HAYASHI , Seiji SARAYAMA , Yoshikazu KATO , Yusuke MORI
IPC分类号： C30B9/00 , C30B29/40
CPC分类号： C30B9/00 , C30B9/10 , C30B19/02 , C30B19/06 , C30B29/406 , C30B35/002
摘要： An apparatus is used for manufacturing a group 13 nitride crystal by using a flux method. The apparatus includes a reaction vessel, a rotational mechanism, and a structure. The reaction vessel contains a mixed melt and a seed crystal placed in the mixed melt. The mixed melt contains an alkali metal or an alkali-earth metal and a group 13 element. The rotational mechanism rotates the reaction vessel. The structure is provided inside the reaction vessel for stirring the mixed melt and is constructed such that a height of a first portion of the structure close to an inner wall of the reaction vessel is higher than a height of a second portion of the structure close to a center of the reaction vessel.
摘要翻译：使用通量法制造氮化镓族13族的装置。该装置包括反应容器，旋转机构和结构。反应容器含有混合熔体和置于混合熔体中的晶种。混合熔体含有碱金属或碱土金属和13族元素。旋转机构使反应容器旋转。该结构设置在反应容器的内部用于搅拌混合熔体，并被构造成使得靠近反应容器内壁的结构的第一部分的高度高于结构的第二部分的高度反应容器的中心。

9. 发明申请

US20120003446A1 NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：氮化物晶体及其制造方法
公开(公告)号：US20120003446A1
公开(公告)日：2012-01-05
申请号：US13164939
申请日：2011-06-21
申请人： Takashi SATOH , Seiji Sarayama , Hirokazu Iwata , Yusuke Mori , Yasuo Kitaoka
发明人： Takashi SATOH , Seiji Sarayama , Hirokazu Iwata , Yusuke Mori , Yasuo Kitaoka
IPC分类号： B32B7/02 , C30B19/00
CPC分类号： C30B19/02 , C30B9/10 , C30B19/08 , C30B19/10 , C30B29/403 , C30B29/406 , Y10T428/24942
摘要： A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation.
摘要翻译：一种环绕晶种的外周的氮化物晶体，在一个实施方案中，氮化物晶体包括：第一部分区域和具有与第一部分区域的光学特性不同的光学特性的第二部分区域，并且具有指示晶体取向。

10. 发明申请

US20110256981A1 APPARATUS FOR CONTROLLING AUTOMATIC STOP AND RESTART OF ENGINE 有权
标题翻译：用于控制自动停止和发动机重启的装置
公开(公告)号：US20110256981A1
公开(公告)日：2011-10-20
申请号：US13087938
申请日：2011-04-15
申请人： Tatsuya SAITO , Takashi SATOH , Satoru MIZUNO , Yosuke OHMORI , Masayoshi TAKEDA
发明人： Tatsuya SAITO , Takashi SATOH , Satoru MIZUNO , Yosuke OHMORI , Masayoshi TAKEDA
IPC分类号： B60W10/06 , B60W10/18
CPC分类号： B60W10/06 , B60W10/184 , B60W30/18072 , B60W30/18136 , B60W30/192 , B60W2510/0671 , B60W2540/12 , F02N11/0833 , F02N11/084 , F02N2200/0805 , Y02T10/48 , Y10T477/81
摘要： An apparatus for controlling automatic stop/restart of an engine, includes: an automatic-stop/restart-control-unit which stops/restarts the engine; a brake-pressure-detection-unit which detects brake pressure in a brake system and controls the brake pressure to perform anti-skid control; a first-determination-unit which determines whether the brake pressure is not less than a first-threshold; a second-determination-unit which determines whether the brake pressure is not less than a second-threshold larger than the-first threshold; a stop-allowing-unit which allows the automatic-stop/restart-control-unit to stop the engine while the engine operates, when the first-determination-unit determines that the brake pressure is not less than the first-threshold and the second-determination-unit determines that the brake pressure is less than the second-threshold; and a stop-inhibiting-unit which inhibits the automatic-stop/restart-control-unit from stopping the engine while the engine operates, when the-first-determination-unit determines that the brake pressure is less than the first-threshold and the second-determination-unit determines that the brake pressure is not less than the second-threshold.
摘要翻译：一种用于控制发动机的自动停止/重启的装置，包括：停止/重启发动机的自动停止/重启控制单元; 制动压力检测单元，其检测制动系统中的制动压力并控制制动压力进行防滑控制; 确定制动压力是否不小于第一阈值的第一确定单元; 确定制动压力是否不小于大于第一阈值的第二阈值的第二确定单元; 一个停止允许单元，当第一确定单元确定制动压力不小于第一阈值时，允许自动停止/重启控制单元在发动机操作时停止发动机，而第二 - 确定单元确定制动压力小于第二阈值; 以及停止抑制单元，其在发动机运转时禁止所述自动停止/重新启动控制单元停止发动机，当所述第一判定单元确定所述制动压力小于所述第一阈值时，第二确定单元确定制动压力不小于第二阈值。

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