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1. 发明授权

US11040887B2 Spinel particles, method for producing same and composition and molded article including spinel particles 有权
公开(公告)号：US11040887B2
公开(公告)日：2021-06-22
申请号：US16310942
申请日：2016-06-23
申请人： DIC Corporation
发明人： Hironobu Oki , Kazuo Itoya , Masaki Iida , Jian-Jun Yuan , Hiroshi Kinoshita
IPC分类号： C01F7/00 , C01F7/16 , C30B9/10
摘要： Alumina is generally used as an inorganic filler, while spinel, which is known to be lower in thermal conductivity than alumina, is used in applications such as gems, fluorescence emitters, catalyst carriers, adsorbents, photocatalysts and heat-resistant insulating materials, but not expected to be used as a thermally conductive inorganic filler. Thus, an object of the invention is to provide spinel particles having excellent thermal conductive properties. The invention relates to a spinel particle including magnesium, aluminum and oxygen atoms and molybdenum and having a [111] plane crystallite diameter of 220 nm or more.

2. 发明授权

US10428440B2 SiC single crystal and production method thereof 有权
公开(公告)号：US10428440B2
公开(公告)日：2019-10-01
申请号：US14394790
申请日：2013-04-05
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Katsunori Danno
IPC分类号： C30B19/12 , C30B29/36 , C30B17/00 , C30B9/10 , C30B19/10 , C30B19/04
摘要： A high-quality SiC single crystal and a method for producing such a SiC single crystal is provided. In the SiC single crystal, the threading dislocation density including screw dislocation, edge dislocation and micropipe defect is reduced. The method for producing the SiC single crystal according to a solution technique involves bringing an SiC seed crystal into contact with an Si—C solution having a temperature gradient in which a temperature of the Si—C solution is lower towards the surface of the SiC seed crystal. Growing an SiC single crystal includes setting the temperature gradient of the surface region of the Si—C solution to 10° C/cm or below, bringing the (1-100) face of the SiC seed crystal into contact with the Si—C solution, and growing an SiC single crystal on the (1-100) face of the seed crystal at a ratio (single crystal growth rate/temperature gradient) of less than 20×10−4 cm2/h·° C.

3. 发明授权

US10249494B2 Free-standing substrate, function element and method for producing same 有权
公开(公告)号：US10249494B2
公开(公告)日：2019-04-02
申请号：US15661822
申请日：2017-07-27
申请人： NGK INSULATORS, LTD.
发明人： Takashi Yoshino , Katsuhiro Imai , Masahiro Sakai
IPC分类号： H01L21/00 , H01L21/02 , C30B7/10 , C30B9/12 , C30B25/04 , C30B25/18 , C30B29/20 , C30B29/40 , C30B29/68 , H01L21/78 , H01L29/34 , H01L33/00 , H01L33/02 , H01L33/32 , C30B9/10 , C30B19/02 , C30B19/12 , C30B28/04 , C30B28/14 , H01L29/20 , H01L29/872 , H01L29/45 , H01L29/66 , H01L29/778
摘要： A self-supporting substrate includes a first nitride layer grown by a hydride vapor deposition method or ammonothermal method and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium; and a second nitride layer grown by a sodium flux method on the first nitride layer and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium. The first nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the first nitride layer. The second nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the second nitride layer. The first nitride layer has a thickness larger than a thickness of the second nitride layer.

4. 发明授权

US10128406B2 GaN template substrate 有权
公开(公告)号：US10128406B2
公开(公告)日：2018-11-13
申请号：US15099716
申请日：2016-04-15
申请人： NGK INSULATORS, LTD.
发明人： Mikiya Ichimura , Yoshitaka Kuraoka , Masahiko Namerikawa
IPC分类号： H01L29/20 , H01L29/778 , H01L33/12 , C30B25/02 , C30B29/40 , H01L21/02 , C30B9/10 , C30B19/02 , C30B19/12 , C30B29/68 , H01L29/66 , H01L33/00 , H01L33/32 , H01L33/06
摘要： A device substrate in which no streaked morphological abnormality occurs is achieved. A GaN template substrate includes: a base substrate; and a first GaN layer epitaxially formed on the base substrate, wherein the first GaN layer has a compressive stress greater than or equal to 260 MPa that is intrinsic in an inplane direction, or a full width at half maximum of a peak representing E2 phonons of GaN near a wavenumber of 568 cm−1 in a Raman spectrum is lower than or equal to 1.8 cm−1. With all of these requirements, a device substrate includes: a second GaN layer epitaxially formed on the first GaN layer; and a device layer epitaxially formed on the second GaN layer and made of a group 13 nitride.

5. 发明授权

US09732441B2 Production apparatus and production method of SiC single crystal 有权
公开(公告)号：US09732441B2
公开(公告)日：2017-08-15
申请号：US14125625
申请日：2012-06-15
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
IPC分类号： C30B9/00 , C30B35/00 , C30B9/10 , C30B29/36 , C30B15/32 , C30B17/00 , C30B11/00 , C30B19/06 , C30B19/08
CPC分类号： C30B35/00 , C30B9/10 , C30B11/003 , C30B15/32 , C30B17/00 , C30B19/068 , C30B19/08 , C30B29/36 , Y10T117/1068 , Y10T117/1092
摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

6. 发明授权

US09732436B2 SiC single-crystal ingot, SiC single crystal, and production method for same 有权
公开(公告)号：US09732436B2
公开(公告)日：2017-08-15
申请号：US14405543
申请日：2013-04-16
申请人： Takayuki Shirai , Katsunori Danno
发明人： Takayuki Shirai , Katsunori Danno
IPC分类号： C30B19/06 , C30B9/06 , C30B9/00 , C30B19/04 , C30B29/36 , C30B17/00 , C30B19/02 , C30B19/10 , C30B9/10 , C30B19/08 , C30B19/12
CPC分类号： C30B19/062 , C30B9/00 , C30B9/06 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/04 , C30B19/08 , C30B19/10 , C30B19/12 , C30B29/36
摘要： Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.

7. 发明授权

US09691610B2 Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrate 有权
公开(公告)号：US09691610B2
公开(公告)日：2017-06-27
申请号：US14295204
申请日：2014-06-03
申请人： TOYODA GOSEI CO., LTD.
发明人： Shohei Kumegawa , Yasuhide Yakushi , Seiji Nagai , Miki Moriyama
IPC分类号： C30B9/10 , H01L21/02 , H01L21/78
CPC分类号： H01L21/0254 , H01L21/02623 , H01L21/02642 , H01L21/02647 , H01L21/7806
摘要： The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer.

8. 发明授权

US09222199B2 Crystal manufacturing apparatus 有权
标题翻译：水晶制造装置
公开(公告)号：US09222199B2
公开(公告)日：2015-12-29
申请号：US12748515
申请日：2010-03-29
申请人： Seiji Sarayama , Hirokazu Iwata
发明人： Seiji Sarayama , Hirokazu Iwata
IPC分类号： C30B35/00 , C30B29/40 , C30B9/10
CPC分类号： C30B29/403 , C30B9/10 , C30B29/406 , Y10S117/90 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1064
摘要： A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels.
摘要翻译：用于制造III族氮化物晶体的晶体制造装置包括：保持包含碱金属和III族金属的混合熔融液的坩埚; 将坩埚容纳在反应容器中的反应容器; 用反应容器加热坩埚的加热装置; 保持容器，其具有能够打开和关闭的盖子，将反应容器和加热装置容纳在容纳容器中; 容纳保持容器在密封容器中的密封容器，具有能够打开保持容器的盖以将源材料供应到坩埚中并在密封状态下取出制造的GaN晶体的操作装置，并且关闭盖保持容器密封在密封容器中，密封容器包括惰性气体气氛或氮气氛; 以及用于通过每个容器向混合的熔融液体供给氮气的气体供给装置。

9. 发明申请

US20140338587A1 METHOD FOR PURIFYING SILICON 审中-公开
标题翻译：纯化硅的方法
公开(公告)号：US20140338587A1
公开(公告)日：2014-11-20
申请号：US14285125
申请日：2014-05-22
申请人： Calisolar, Inc.
发明人： Scott Nichol
IPC分类号： C01B33/037 , C30B9/10
CPC分类号： C01B33/037 , C30B9/10 , C30B11/00 , C30B13/00 , C30B15/00 , C30B29/06
摘要： The present invention provides for methods of purifying silicon, methods for obtaining purified silicon, as well as methods for obtaining purified silicon crystals, purified granulized silicon and/or purified silicon ingots.
摘要翻译：本发明提供了纯化硅的方法，获得纯化硅的方法以及获得纯化的硅晶体，纯化的颗粒状硅和/或纯化的硅锭的方法。

10. 发明授权

US07959730B2 Method for processing silicon powder to obtain silicon crystals 有权
标题翻译：加工硅粉以获得硅晶体的方法
公开(公告)号：US07959730B2
公开(公告)日：2011-06-14
申请号：US12244839
申请日：2008-10-03
申请人： Scott Nichol
发明人： Scott Nichol
IPC分类号： C30B28/06 , C30B9/10 , C01B33/037
CPC分类号： C01B33/037 , C30B9/10 , C30B29/06
摘要： Embodiments of the present invention relate to a process for obtaining silicon crystals from silicon. The method includes contacting silicon powder with a solvent metal to provide a mixture containing silicon, melting the silicon under submersion to provide a first molten liquid, contacting the first molten liquid with a first gas to provide dross and a second molten liquid, separating the dross and the second molten liquid, cooling the second molten liquid to form first silicon crystals and a first mother liquid and separating the first silicon crystals and the first mother liquid.
摘要翻译：本发明的实施例涉及从硅获得硅晶体的方法。该方法包括使硅粉与溶剂金属接触以提供含有硅的混合物，在浸没下熔化硅以提供第一熔融液体，使第一熔融液体与第一气体接触以提供浮渣和第二熔融液体，分离渣和第二熔液，冷却第二熔液以形成第一硅晶体和第一母液，并分离第一硅晶体和第一母液。

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