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1. 发明申请

US20070063228A1 Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，半导体器件，显示器，结晶方法和制造薄膜晶体管的方法
公开(公告)号：US20070063228A1
公开(公告)日：2007-03-22
申请号：US11432387
申请日：2006-05-12
申请人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
发明人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
IPC分类号： H01L27/148 , H01L29/768 , H01L29/74
CPC分类号： H01L29/78621 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.
摘要翻译：本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

2. 发明授权

US07335910B2 Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，半导体器件，显示器，结晶方法和制造薄膜晶体管的方法
公开(公告)号：US07335910B2
公开(公告)日：2008-02-26
申请号：US11432387
申请日：2006-05-12
申请人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
发明人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L29/00
CPC分类号： H01L29/78621 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.
摘要翻译：本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

3. 发明申请

US20090134394A1 CRYSTAL SILICON ARRAY, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR 审中-公开
标题翻译：晶体硅阵列，薄膜晶体管的制造方法
公开(公告)号：US20090134394A1
公开(公告)日：2009-05-28
申请号：US12277732
申请日：2008-11-25
申请人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
发明人： Kazufumi AZUMA , Shigeyuki Shimoto , Masakiyo Matsumura , Takahiko Endo , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1285 , H01L21/02381 , H01L21/02686 , H01L27/1296 , H01L29/04
摘要： A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 μm square or more, and at least one needle crystal portion having a grain length of 3.5 μm or more.
摘要翻译：晶体硅阵列包括通过使至少一部分非单晶半导体膜结晶而获得的结晶单元区域。结晶单元区域包括至少一个尺寸为7μm以上的正方形二维晶体部分和至少一个晶粒长度为3.5μm或更大的针晶部分。

4. 发明申请

US20080289573A1 CRYSTALLIZATION METHOD, CRYSTALLIZATION APPARATUS, PROCESSED SUBSTRATE, THIN FILM TRANSISTOR AND DISPLAY APPARATUS 失效
标题翻译：结晶方法，结晶装置，处理基板，薄膜晶体管和显示装置
公开(公告)号：US20080289573A1
公开(公告)日：2008-11-27
申请号：US12166997
申请日：2008-07-02
申请人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki JYUMONJI , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： B05B5/00
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

5. 发明申请

US20060186412A1 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus 审中-公开
标题翻译：结晶方法，结晶装置，处理衬底，薄膜晶体管和显示装置
公开(公告)号：US20060186412A1
公开(公告)日：2006-08-24
申请号：US11408022
申请日：2006-04-21
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masakiyo Matsumura , Masato Hiramatsu , Yoshinobu Kimura , Yukio Taniguchi , Tomoya Kato
IPC分类号： H01L29/76
CPC分类号： H01L21/02678 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , C30B13/24 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/78675 , Y10T117/1004 , Y10T117/1008
摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
摘要翻译：提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求，结晶装置，薄膜晶体管和显示装置。当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少，熔融非单晶半导体的光强度。此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

6. 发明申请

US20050212063A1 Thin-film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US20050212063A1
公开(公告)日：2005-09-29
申请号：US11085111
申请日：2005-03-22
申请人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
发明人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
IPC分类号： H01L21/336 , H01L21/77 , H01L21/8236 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L27/1296 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78696
摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要翻译：提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响形成在Si岛的边缘部分的寄生晶体管。薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。栅极区域在绝缘基板上具有平面的环形形状。高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

7. 发明授权

US08009345B2 Crystallization apparatus, crystallization method, device, and light modulation element 有权
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：US08009345B2
公开(公告)日：2011-08-30
申请号：US12962750
申请日：2010-12-08
申请人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
发明人： Yukio Taniguchi , Masakiyo Matsumura , Kazufumi Azuma , Tomoya Kato , Takahiko Endo
IPC分类号： G02F1/01
CPC分类号： B23K26/066
摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.
摘要翻译：结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或下面。

8. 发明授权

US08168979B2 Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device 失效
标题翻译：结晶方法，薄膜晶体管制造方法，薄膜晶体管，显示器和半导体器件
公开(公告)号：US08168979B2
公开(公告)日：2012-05-01
申请号：US12467852
申请日：2009-05-18
申请人： Tomoya Kato , Masakiyo Matsumura
发明人： Tomoya Kato , Masakiyo Matsumura
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L21/02675 , H01L21/02609 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.
摘要翻译：根据结晶化方法，在通过用激光照射设置在绝缘基板上的40〜100nm的非单一半导体薄膜的结晶化中，在基板的表面上形成具有逆峰图案的光强度分布控制光强分布的光强度梯度，形成晶体晶格阵列，其中每个晶粒在晶体生长方向上比在宽度方向上具有更长的形状，并且具有优选的晶体取向（100）形成晶粒长度方向，并且形成TFT，其中形成源区和漏区，使得电流在晶粒生长方向上流过晶粒阵列的多个晶粒。

9. 发明申请

US20090004763A1 LASER CRYSTALLIZATION METHOD AND CRYSTALLIZATION APPARATUS 审中-公开
标题翻译：激光结晶方法和结晶装置
公开(公告)号：US20090004763A1
公开(公告)日：2009-01-01
申请号：US12145826
申请日：2008-06-25
申请人： Takashi Ono , Masakiyo Matsumura , Kazurumi Azuma , Tomoya Kato
发明人： Takashi Ono , Masakiyo Matsumura , Kazurumi Azuma , Tomoya Kato
IPC分类号： H01L21/00 , B05C11/00
CPC分类号： G01B11/06 , B23K26/048 , H01L21/02678 , H01L21/02686
摘要： The present invention discloses a laser crystallization method and crystallization apparatus using a high-accuracy substrate height control mechanism. There is provided a laser crystallization method includes obtaining a first pulse laser beam having an inverse-peak-pattern light intensity distribution formed by a phase shifter, and irradiating a thin film disposed on a substrate with the first pulse laser beam, thereby melting and crystallizing the thin film, the method includes selecting a desired one of reflected light components of a second laser beam by using a polarizing element disposed on an optical path of the second laser beam when illuminating, with the second laser beam, an first pulse laser beam irradiation position of the thin film, correcting a height of the substrate to a predetermined height by detecting the selected reflected light component, and irradiating the first pulse laser beam to the thin film having the corrected height.
摘要翻译：本发明公开了一种使用高精度基板高度控制机构的激光结晶方法和结晶装置。提供了一种激光结晶方法，包括获得具有由移相器形成的反峰值图案光强度分布的第一脉冲激光束，并用第一脉冲激光束照射设置在基板上的薄膜，由此熔化和结晶该薄膜的方法包括：当利用第二激光束照射第二激光束时，使用设置在第二激光束的光路上的偏振元件来选择第二激光束的所需一个反射光分量通过检测所选择的反射光分量将衬底的高度校正到预定高度，并将第一脉冲激光束照射到具有校正高度的薄膜上。

10. 发明申请

US20060027162A1 Crystallization apparatus, crystallization method, and phase modulation device 有权
标题翻译：结晶装置，结晶方法和相位调制装置
公开(公告)号：US20060027162A1
公开(公告)日：2006-02-09
申请号：US11098647
申请日：2005-04-05
申请人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
发明人： Tomoya Kato , Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B1/00 , C30B13/24 , Y10T117/1004
摘要： A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.
摘要翻译：本发明的结晶装置用具有预定的光强度分布的光通量照射非单晶半导体膜，使薄膜结晶化，并且包括相位调制装置，该相位调制装置包括在一定时间内排列的多个单位区域并且相互具有基本相同的图案，以及设置在相位调制装置和非单晶半导体膜之间的光学图像形成系统。相位调制装置的单位面积具有一定的相位的基准面，设置在各单位面积的中心附近的第一区域，相对于基准面具有第一相位差，第二区域设置在第一区域的附近并且具有与第一相位差相对于基准面大致相同的相位差。

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