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    • 2. 发明授权
    • TMR or CPP structure with improved exchange properties
    • 具有改进的交换性能的TMR或CPP结构
    • US07978439B2
    • 2011-07-12
    • US11820251
    • 2007-06-19
    • Kunliang ZhangHui-Chuan WangTong ZhaoMin Li
    • Kunliang ZhangHui-Chuan WangTong ZhaoMin Li
    • G11B5/39
    • G11B5/3909B82Y10/00B82Y25/00G01R33/093G11B5/3906H01L43/08Y10T428/1114
    • An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.
    • 在GMR或TMR元件中的AFM层和AP2钉扎层之间设置插入层,以通过增加Hex和Hex / Hc比来提高交换耦合性能,而不降低MR比。 插入层可以是由至少一种Co,Fe或Ni元素组成的1至15埃厚的非晶磁性层,以及至少一种具有选自B,Zr,Hf,Nb,Ta,Si ,或P,或由Cu,Ru,Mn,Hf或Cr组成的1〜5埃厚的非磁性层。 优选地,非晶磁性层中的一种或多种非晶质元素的含量小于40原子%。 可选地,插入层可以形成在AP2钉扎层内。 插入层的实例是CoFeB,CoFeZr,CoFeNb,CoFeHf,CoFeNiZr,CoFeNiHf和CoFeNiNbZr。
    • 3. 发明申请
    • TMR device with novel free layer stucture
    • TMR器件具有新颖的自由层结构
    • US20100177449A1
    • 2010-07-15
    • US12319972
    • 2009-01-14
    • Tong ZhaoHui-Chuan WangMin LiKunliang Zhang
    • Tong ZhaoHui-Chuan WangMin LiKunliang Zhang
    • G11B5/33B05D5/12
    • G11B5/3909B82Y10/00B82Y25/00G01R33/098G11B5/3906H01L43/08H01L43/10H01L43/12
    • A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.
    • 公开了具有FL1 /插入/ FL2配置的复合自由层,用于在TMR或GMR传感器中实现高dR / R,低RA和低λ。 铁磁FL1和FL2层分别具有(+)λ和( - )λ值。 FL1可以是CoFe,CoFeB或其与Ni,Ta,Mn,Ti,W,Zr,Hf,Tb或Nb的合金。 FL2可以是CoFe,NiFe或其与Ni,Ta,Mn,Ti,W,Zr,Hf,Tb,Nb或B的合金。薄插入层包括至少一种诸如Co,Fe和Ni 以及选自Ta,Ti,W,Zr,Hf,Nb,Mo,V,Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中,dR / R> 60%,λ 〜1×10-6,当FL1为CoFe / CoFeB / CoFe时,RA = 1.2ohm-um2,FL2为CoFe / NiFe / CoFe,插入层为CoTa或CoFeBTa。
    • 7. 发明申请
    • TMR or CPP structure with improved exchange properties
    • 具有改进的交换性能的TMR或CPP结构
    • US20080316657A1
    • 2008-12-25
    • US11820251
    • 2007-06-19
    • Kunliang ZhangHui-Chuan WangTong ZhaoMin Li
    • Kunliang ZhangHui-Chuan WangTong ZhaoMin Li
    • G11B5/127
    • G11B5/3909B82Y10/00B82Y25/00G01R33/093G11B5/3906H01L43/08Y10T428/1114
    • An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.
    • 在GMR或TMR元件中的AFM层和AP2钉扎层之间设置插入层,以通过增加Hex和Hex / Hc比来提高交换耦合性能,而不降低MR比。 插入层可以是由至少一种Co,Fe或Ni元素组成的1至15埃厚的非晶磁性层,以及至少一种具有选自B,Zr,Hf,Nb,Ta,Si ,或P,或由Cu,Ru,Mn,Hf或Cr组成的1〜5埃厚的非磁性层。 优选地,非晶磁性层中的一种或多种非晶质元素的含量小于40原子%。 可选地,插入层可以形成在AP2钉扎层内。 插入层的实例是CoFeB,CoFeZr,CoFeNb,CoFeHf,CoFeNiZr,CoFeNiHf和CoFeNiNbZr。