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1. 发明授权

US09021685B2 Two step annealing process for TMR device with amorphous free layer 有权
公开(公告)号：US09021685B2
公开(公告)日：2015-05-05
申请号：US12075605
申请日：2008-03-12
申请人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
发明人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
IPC分类号： G11B5/127 , G11B5/39 , B82Y10/00 , B82Y25/00 , G01R33/09 , G11B5/31 , G11C11/16 , H01L43/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11C11/16 , G11C11/161 , H01L43/12 , Y10T29/49034
摘要： An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.

2. 发明申请

US20130001189A1 TMR Device with Novel Free Layer Structure 有权
标题翻译：具有新型自由层结构的TMR器件
公开(公告)号：US20130001189A1
公开(公告)日：2013-01-03
申请号：US13561206
申请日：2012-07-30
申请人： Tong Zhao , Hui Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49034 , Y10T29/49052
摘要： A composite free layer having a FL1/insertion/FL2 configuration where a top surface of FL1 is treated with a weak plasma etch is disclosed for achieving enhanced dR/R while maintaining low RA, and low λ in TMR or GMR sensors. The weak plasma etch removes less than about 0.2 Angstroms of FL1 and is believed to modify surface structure and possibly increase surface energy. FL1 may be CoFe, CoFe/CoFeB, or alloys thereof having a (+) λ value. FL2 may be CoFe, NiFe, or alloys thereof having a (−) λ value. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element. When CoFeBTa is selected as insertion layer, the CoFeB:Ta ratio is from 1:1 to 4:1.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，其中用弱等离子体蚀刻处理FL1的顶表面，以实现增强的dR / R，同时保持低的RA和TMR或GMR传感器中的低λ。弱等离子体蚀刻去除了小于约0.2埃的FL1，据信可以改变表面结构并可能增加表面能。 FL1可以是具有（+）λ值的CoFe，CoFe / CoFeB或其合金。 FL2可以是具有（ - ）λ值的CoFe，NiFe或其合金。薄插入层包括至少一种诸如Co，Fe和Ni的磁性元件和至少一种非磁性元件。当选择CoFeBTa作为插入层时，CoFeB：Ta的比例为1:1至4:1。

3. 发明授权

US07978439B2 TMR or CPP structure with improved exchange properties 有权
标题翻译：具有改进的交换性能的TMR或CPP结构
公开(公告)号：US07978439B2
公开(公告)日：2011-07-12
申请号：US11820251
申请日：2007-06-19
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , Y10T428/1114
摘要： An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.
摘要翻译：在GMR或TMR元件中的AFM层和AP2钉扎层之间设置插入层，以通过增加Hex和Hex / Hc比来提高交换耦合性能，而不降低MR比。插入层可以是由至少一种Co，Fe或Ni元素组成的1至15埃厚的非晶磁性层，以及至少一种具有选自B，Zr，Hf，Nb，Ta，Si ，或P，或由Cu，Ru，Mn，Hf或Cr组成的1〜5埃厚的非磁性层。优选地，非晶磁性层中的一种或多种非晶质元素的含量小于40原子％。可选地，插入层可以形成在AP2钉扎层内。插入层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr。

4. 发明申请

US20100177449A1 TMR device with novel free layer stucture 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US20100177449A1
公开(公告)日：2010-07-15
申请号：US12319972
申请日：2009-01-14
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，用于在TMR或GMR传感器中实现高dR / R，低RA和低λ。铁磁FL1和FL2层分别具有（+）λ和（ - ）λ值。 FL1可以是CoFe，CoFeB或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的合金。 FL2可以是CoFe，NiFe或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb，Nb或B的合金。薄插入层包括至少一种诸如Co，Fe和Ni 以及选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中，dR / R> 60％，λ 〜1×10-6，当FL1为CoFe / CoFeB / CoFe时，RA = 1.2ohm-um2，FL2为CoFe / NiFe / CoFe，插入层为CoTa或CoFeBTa。

5. 发明申请

US20100123208A1 MR device with synthetic free layer structure 有权
标题翻译：具有合成自由层结构的MR器件
公开(公告)号：US20100123208A1
公开(公告)日：2010-05-20
申请号：US12313351
申请日：2008-11-19
申请人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01L43/12
摘要： A magneto-resistive device having a large output signal as well as a high signal-to-noise ratio is described along with a process for forming it. This improved performance was accomplished by expanding the free layer into a multilayer laminate comprising at least three ferromagnetic layers separated from one another by antiparallel coupling layers. The ferromagnetic layer closest to the transition layer must include CoFeB while the furthermost layer is required to have low Hc as well as a low and negative lambda value. One possibility for the central ferromagnetic layer is NiFe but this is not mandatory.
摘要翻译：描述具有大输出信号以及高信噪比的磁阻装置及其形成方法。通过将自由层扩展成包括通过反平行耦合层彼此分离的至少三个铁磁层的多层层压体来实现这一改进的性能。最接近过渡层的铁磁层必须包括CoFeB，而最外层需要具有低Hc以及低和负的λ值。中心铁磁层的一种可能性是NiFe，但这不是强制性的。

6. 发明授权

US07602033B2 Low resistance tunneling magnetoresistive sensor with composite inner pinned layer 有权
标题翻译：低电阻隧道磁阻传感器，具有复合内固定层
公开(公告)号：US07602033B2
公开(公告)日：2009-10-13
申请号：US11811930
申请日：2007-05-29
申请人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Yu-Hsia Chen , Min Li
发明人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Yu-Hsia Chen , Min Li
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/12
摘要： A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of
摘要翻译：通过在AP2 / Ru / AP1钉扎层配置中采用复合内固定（AP1）层制造高性能TMR传感器。在一个实施例中，Ru结合层上存在10至80埃厚的CoFeB或CoFeB合金层，CoFeB或CoFeB合金上为5至50埃厚的Fe或Fe合金层，厚度为5至30埃在Fe或Fe合金上形成Co或Co丰富的合金层。当在TMR堆叠中使用CoFe AP2层，MgO（NOX）隧道势垒和CoFe / NiFe自由层时，实现约48％的RA比为<2欧姆 - um2的MR比。观察到改善的RA均匀性和较少的头噪声。可选地，可以在耦合层和CoFeB或CoFeB合金层之间插入CoFe层以改善钉扎强度并增强结晶。

7. 发明授权

US07497007B2 Process of manufacturing a TMR device 有权
标题翻译：制造TMR器件的过程
公开(公告)号：US07497007B2
公开(公告)日：2009-03-03
申请号：US11181176
申请日：2005-07-14
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/187
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/303 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFez layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
摘要翻译：通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。通过用氧等离子体处理CoFez层形成OSL。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。结果，Hin值可以减少1/3至约32Oe。对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

8. 发明申请

US20080316657A1 TMR or CPP structure with improved exchange properties 有权
标题翻译：具有改进的交换性能的TMR或CPP结构
公开(公告)号：US20080316657A1
公开(公告)日：2008-12-25
申请号：US11820251
申请日：2007-06-19
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/08 , Y10T428/1114
摘要： An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.
摘要翻译：在GMR或TMR元件中的AFM层和AP2钉扎层之间设置插入层，以通过增加Hex和Hex / Hc比来提高交换耦合性能，而不降低MR比。插入层可以是由至少一种Co，Fe或Ni元素组成的1至15埃厚的非晶磁性层，以及至少一种具有选自B，Zr，Hf，Nb，Ta，Si ，或P，或由Cu，Ru，Mn，Hf或Cr组成的1〜5埃厚的非磁性层。优选地，非晶磁性层中的一种或多种非晶质元素的含量小于40原子％。可选地，插入层可以形成在AP2钉扎层内。插入层的实例是CoFeB，CoFeZr，CoFeNb，CoFeHf，CoFeNiZr，CoFeNiHf和CoFeNiNbZr。

9. 发明申请

US20080260943A1 Process for composite free layer in CPP GMR or TMR device 有权
标题翻译： CPP GMR或TMR装置中复合自由层的工艺
公开(公告)号：US20080260943A1
公开(公告)日：2008-10-23
申请号：US12214503
申请日：2008-06-19
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.
摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。描述了用于制造该装置的方法。

10. 发明申请

US20070297103A1 Novel way to reduce the ordering temperature for Co2MnSi-like Heusler alloys for CPP, TMR, MRAM, or other spintronics device applications 有权
标题翻译：降低CO2MnSi样Heusler合金对CPP，TMR，MRAM或其他自旋电子器件应用的订购温度的新方法
公开(公告)号：US20070297103A1
公开(公告)日：2007-12-27
申请号：US11472126
申请日：2006-06-21
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
IPC分类号： G11B5/127
CPC分类号： G11B5/3983 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/183 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.
摘要翻译：公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个附加的FeCo层，以得到由FeCo / [HA / IL] N HA表示的构型，[HA / IL] N < HA / FeCo或FeCo / [HA / IL] N / HACo，其中n为整数> = 1，HA为Heusler合金层，IL为插入层。任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。例如，Co 2 MnSi可以与Al或FeCo靶或与Co 2 N 2 MnAl或Co 2 FeSi靶共溅射。

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