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1. 发明授权

US08754471B2 Semiconductor device having gate in recess 有权
标题翻译：半导体器件具有凹槽中的栅极
公开(公告)号：US08754471B2
公开(公告)日：2014-06-17
申请号：US13040610
申请日：2011-03-04
申请人： Toshiaki Iwamatsu , Kozo Ishikawa , Masashi Kitazawa , Kiyoshi Hayashi , Takahiro Maruyama , Masaaki Shinohara , Kenji Kawai
发明人： Toshiaki Iwamatsu , Kozo Ishikawa , Masashi Kitazawa , Kiyoshi Hayashi , Takahiro Maruyama , Masaaki Shinohara , Kenji Kawai
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/66 , H01L29/78
CPC分类号： H01L29/66621 , H01L21/28 , H01L29/66795 , H01L29/772 , H01L29/7834 , Y02E10/50
摘要： There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.
摘要翻译：提供了可以在不劣化特性的情况下小型化的半导体器件及其制造方法。半导体器件包括：主表面，源极区域和漏极区域在主表面彼此分离形成的半导体衬底;形成在源区域和漏极区域之间的主表面上的栅电极层;第一形成为与源极区域的表面接触的导电层，以及形成为与漏极区域的表面接触的第二导电层。在主表面上形成凹部，以便通过栅极电极层下面的部分从第一导电层和源极区域之间的接触区域延伸到第二导电层和漏极区域之间的接触区域。

2. 发明授权

US08492230B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08492230B2
公开(公告)日：2013-07-23
申请号：US12872900
申请日：2010-08-31
申请人： Kozo Ishikawa , Masaaki Shinohara , Toshiaki Iwamatsu
发明人： Kozo Ishikawa , Masaaki Shinohara , Toshiaki Iwamatsu
IPC分类号： H01L21/84 , H01L29/78
CPC分类号： H01L27/1211 , H01L21/76243 , H01L21/76256 , H01L21/845
摘要： To provide a technique capable of achieving improvement of the parasitic resistance in FINFETs. In the FINFET in the present invention, a sidewall is formed of a laminated film. Specifically, the sidewall is composed of a first silicon oxide film, a silicon nitride film formed over the first silicon oxide film, and a second silicon oxide film formed over the silicon nitride film. The sidewall is not formed on the side wall of a fin. Thus, in the present invention, the sidewall is formed on the side wall of a gate electrode and the sidewall is not formed on the side wall of the fin.
摘要翻译：提供能够实现FINFET中寄生电阻的改善的技术。在本发明的FINFET中，由层叠膜形成侧壁。具体地，侧壁由形成在第一氧化硅膜上的第一氧化硅膜，氮化硅膜和形成在氮化硅膜上的第二氧化硅膜构成。侧壁不形成在翅片的侧壁上。因此，在本发明中，侧壁形成在栅电极的侧壁上，侧壁不形成在翅片的侧壁上。

3. 发明申请

US20110049629A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110049629A1
公开(公告)日：2011-03-03
申请号：US12872900
申请日：2010-08-31
申请人： Kozo Ishikawa , Masaaki Shinohara , Toshiaki Iwamatsu
发明人： Kozo Ishikawa , Masaaki Shinohara , Toshiaki Iwamatsu
IPC分类号： H01L27/088 , H01L21/762
CPC分类号： H01L27/1211 , H01L21/76243 , H01L21/76256 , H01L21/845
摘要： To provide a technique capable of achieving improvement of the parasitic resistance in FINFETs. In the FINFET in the present invention, a sidewall is formed of a laminated film. Specifically, the sidewall is composed of a first silicon oxide film, a silicon nitride film formed over the first silicon oxide film, and a second silicon oxide film formed over the silicon nitride film. The sidewall is not formed on the side wall of a fin. Thus, in the present invention, the sidewall is formed on the side wall of a gate electrode and the sidewall is not formed on the side wall of the fin.
摘要翻译：提供能够实现FINFET中寄生电阻的改善的技术。在本发明的FINFET中，由层叠膜形成侧壁。具体地，侧壁由形成在第一氧化硅膜上的第一氧化硅膜，氮化硅膜和形成在氮化硅膜上的第二氧化硅膜构成。侧壁不形成在翅片的侧壁上。因此，在本发明中，侧壁形成在栅电极的侧壁上，侧壁不形成在翅片的侧壁上。

4. 发明申请

US20110081753A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110081753A1
公开(公告)日：2011-04-07
申请号：US12896391
申请日：2010-10-01
申请人： Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
发明人： Shinichi YAMANARI , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.
摘要翻译：提供半导体器件的制造方法，用于提高包括具有高介电常数栅极绝缘体和金属栅电极的MISFET的半导体器件的可靠性。作为主要成分，含有Hf，La，O的第一含Hf绝缘膜形成为n型MISFET的高介电常数栅极绝缘体。作为主要成分，含有Hf，Al，O的第二含Hf绝缘膜形成为p型MISFET的高介电常数栅极绝缘体。然后，通过干蚀刻形成金属膜和硅膜并图案化，从而形成第一和第二栅电极。此后，通过湿蚀刻除去未被第一和第二栅电极覆盖的第一和第二Hf含绝缘膜的部分。此时，进行用不含氢氟酸的酸溶液的湿法和用碱性溶液的另一种湿法，然后进行用含有氢氟酸的酸溶液进一步的湿法。

5. 发明授权

US07989283B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07989283B2
公开(公告)日：2011-08-02
申请号：US12896391
申请日：2010-10-01
申请人： Shinichi Yamanari , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
发明人： Shinichi Yamanari , Ryoichi Yoshifuku , Masaaki Shinohara , Takahiro Maruyama , Kenji Kawai , Yusaku Hirota
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31111 , H01L21/823462 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.
摘要翻译：提供半导体器件的制造方法，用于提高包括具有高介电常数栅极绝缘体和金属栅电极的MISFET的半导体器件的可靠性。作为主要成分，含有Hf，La，O的第一含Hf绝缘膜形成为n型MISFET的高介电常数栅极绝缘体。作为主要成分，含有Hf，Al，O的第二含Hf绝缘膜形成为p型MISFET的高介电常数栅极绝缘体。然后，通过干蚀刻形成金属膜和硅膜并图案化，从而形成第一和第二栅电极。此后，通过湿蚀刻除去未被第一和第二栅电极覆盖的第一和第二Hf含绝缘膜的部分。此时，进行用不含氢氟酸的酸溶液的湿法和用碱性溶液的另一种湿法，然后进行用含有氢氟酸的酸溶液进一步的湿法。

6. 发明授权

US07663179B2 Semiconductor device with rewritable nonvolatile memory cell 有权
标题翻译：具有可重写非易失性存储单元的半导体器件
公开(公告)号：US07663179B2
公开(公告)日：2010-02-16
申请号：US11443252
申请日：2006-05-31
申请人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
发明人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
IPC分类号： H01L29/94
CPC分类号： H01L27/11568 , H01L27/115
摘要： A semiconductor device having a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, the transistors each including a gate insulating film formed over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the corresponding gate electrode. Sidewall spacers of the first field effect transistor are different from those of at least the second field effect transistors. Also, the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor and the gate electrode of the third field effect transistor has a length different from that of either the first field effect transistor or second field effect transistor. The sidewall spacers of the first field effect transistor include a first silicon oxide film, a first silicon nitride film over the first silicon oxide film and a second silicon oxide film over the first silicon nitride film.
摘要翻译：一种半导体器件，具有可重写非易失性存储单元，其包括用于存储的第一场效应晶体管，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，所述晶体管包括形成在半导体衬底上的栅极绝缘膜，在栅极绝缘膜上方的栅电极和相应栅电极的侧壁上的侧壁间隔物。第一场效应晶体管的侧壁间隔物与至少第二场效应晶体管的侧壁间隔物不同。此外，第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的栅极绝缘膜，第三场效应晶体管的栅电极的长度与第一场效应晶体管或第二场效应晶体管的长度不同效应晶体管。第一场效应晶体管的侧壁间隔物包括第一氧化硅膜，第一氧化硅膜上的第一氮化硅膜和位于第一氮化硅膜上的第二氧化硅膜。

7. 发明授权

US07661670B2 Sheet discharge device 有权
标题翻译：排纸装置
公开(公告)号：US07661670B2
公开(公告)日：2010-02-16
申请号：US12068148
申请日：2008-02-04
申请人： Masaaki Shinohara
发明人： Masaaki Shinohara
IPC分类号： B65H31/00
CPC分类号： B65H31/02 , B65H2301/51214 , B65H2405/1111 , B65H2405/1116 , B65H2405/11171 , B65H2511/13 , B65H2511/214 , B65H2220/01 , B65H2220/04 , B65H2220/02 , B65H2220/11
摘要： A sheet discharge device neatly and uniformly aligns edges of print sheets irrespective of the thickness of a print sheet, and exerts the same effect even at a low discharge speed. The sheet discharge device includes: sheet information sensing means for detecting thickness of a print sheet to judge the sheet as a thick sheet, a regular sheet, or a thin sheet; conveying means for discharging the print sheet bearing a printed image in a predetermined direction; a discharge tray that accommodates a stack of the print sheets discharged by the conveying means; wings arranged at a tail end portion of the conveying means, coming in contact with two side edges in a widthwise direction of the print sheet so as to give a U shape curl by curving the sheet in a rough U shape during discharge; control means for commanding, based on the judgment by the sheet information sensing means, the wing to take a predetermined shift mode during discharge of the print sheet; and drive means for moving the wing in a shift mode designated by the control means.
摘要翻译：片材排出装置整齐地均匀地排列打印片材的边缘，而与打印片材的厚度无关，甚至在低放电速度下也会发挥相同的效果。片材排出装置包括：片材信息检测装置，用于检测作为厚片材，普通片材或薄片材的片材的厚度; 输送装置，用于沿预定方向排出承载印刷图像的打印纸; 排出托盘，其容纳由所述输送装置排出的所述打印纸的堆叠; 布置在输送装置的尾端部分的翅片沿着打印纸的宽度方向与两个侧边缘接触，从而通过在排出期间使片材粗糙地弯曲而形成U形卷曲; 控制装置，用于根据纸张信息检测装置的判断命令翼在排版期间采取预定的移动模式; 以及用于以由控制装置指定的移动模式移动机翼的驱动装置。

8. 发明申请

US20060228860A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060228860A1
公开(公告)日：2006-10-12
申请号：US11443257
申请日：2006-05-31
申请人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
发明人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , G11C11/005 , G11C16/0466 , H01L27/105 , H01L27/11573 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： Manufacturing method of a semiconductor device for forming a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, including forming a gate insulating film over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the gate electrode associated with each of the first through third field effect transistors. The sidewall spacers of at least the first field effect transistor have a different width than that of at least the second field effect transistor, the gate electrode of the third field effect transistor has a different length than that of at least the first field effect transistor for memory and the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor.
摘要翻译：一种半导体器件的制造方法，用于形成包括用于存储器的第一场效应晶体管的可重写非易失性存储单元，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，包括在半导体衬底上形成栅极绝缘膜栅极绝缘膜上的栅电极和与第一至第三场效应晶体管中的每一个相关联的栅电极的侧壁上的侧壁隔离物。至少第一场效应晶体管的侧壁间隔物具有与至少第二场效应晶体管不同的宽度，第三场效应晶体管的栅电极具有与至少第一场效应晶体管不同的长度，存储器和第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的厚度。

9. 发明申请

US20100117293A1 Feeding mechanism for printer 有权
标题翻译：打印机进纸机构
公开(公告)号：US20100117293A1
公开(公告)日：2010-05-13
申请号：US12591063
申请日：2009-11-06
申请人： Masaaki Shinohara
发明人： Masaaki Shinohara
IPC分类号： B65H5/06
CPC分类号： B65H5/224 , B41J11/0005 , B41J11/007 , B41J11/0085 , B41J11/06 , B65H5/025 , B65H2404/132 , B65H2406/322
摘要： A feeding apparatus for print media comprises a pressure roller that is provided at an upstream side of an image forming section in a feeding direction of the print media and rotates with being pressed onto an upper surface of a feeding path. The pressure roller includes a plurality of unit rollers aligned along a primary sweeping direction perpendicular to the feeding direction. A center unit roller of the unit rollers is made wider than other unit rollers in the primary sweeping direction. According to the apparatus, cocklings on print media can be removed at desired portions with a simple configuration by controlling suction forces due to varying relative positions to suction ports. Therefore, flatten state of print media in the image forming section can be easily ensured.
摘要翻译：用于打印介质的进给装置包括：加压辊，其设置在图像形成部分的沿打印介质的进给方向的上游侧，并且被旋转并被压靠在进给路径的上表面上。加压辊包括沿垂直于进给方向的主扫掠方向排列的多个单位辊。单位辊的中心单位辊在主扫描方向上比其他单位辊宽。根据该装置，可以通过控制由于与抽吸端口的相对位置的变化而引起的吸力而以简单的结构在期望的部分移除打印介质上的悬挂物。因此，可以容易地确保图像形成部中的打印介质的平坦化状态。

10. 发明申请

US20070103534A1 Ink-Jet printing machine and printing method 有权
标题翻译：喷墨打印机和打印方式
公开(公告)号：US20070103534A1
公开(公告)日：2007-05-10
申请号：US11589741
申请日：2006-10-31
申请人： Masaaki Shinohara , Kinya Ono
发明人： Masaaki Shinohara , Kinya Ono
IPC分类号： B41J2/01
CPC分类号： B41J11/007 , B41J11/0095
摘要： An ink-jet printing machine has: a transfer belt that transfers a printing sheet; a sheet feeding unit that feeds the printing sheet; an ink-jet head that performs ink ejection on the printing sheet; a SS roller that presses a central region of the printing sheet between the sheet feeding unit and the ink-jet head; a printing sheet sensor that detects the deformation of the printing sheet; and a guide roller that presses the printing sheet. The rate of a distance A between the SS roller and the printing sheet sensor to a distance B between the upper surface of a transfer belt and the lower end of the printing sheet sensor is approximately equal to the rate of a distance A′ between the guide roller and the ink-jet head to a distance B′ between the upper surface of the transfer belt and the lower end of the ink-jet head.
摘要翻译：喷墨打印机具有：转印带，其传送打印纸; 送纸单元，其供给打印纸; 喷墨头，其在所述打印纸上执行喷墨; SS辊，其在片材进给单元和喷墨头之间按压打印片材的中心区域; 检测印刷纸的变形的印刷纸传感器; 以及压印印刷纸的导向辊。 SS辊和打印纸传感器之间的距离A的比率与转印带的上表面和打印纸传感器的下端之间的距离B近似等于引导件之间的距离A' 辊和喷墨头在转印带的上表面和喷墨头的下端之间的距离B'处。

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