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1. 发明授权

US08652955B2 Manufacturing method of semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US08652955B2
公开(公告)日：2014-02-18
申请号：US13396429
申请日：2012-02-14
申请人： Masaaki Shinohara
发明人： Masaaki Shinohara
IPC分类号： H01L21/3205
CPC分类号： H01L27/1104 , H01L21/0337 , H01L21/28123 , H01L21/31138 , H01L21/32139 , H01L27/105 , H01L29/665 , H01L29/6656 , H01L29/7833
摘要： Provided is a manufacturing method of semiconductor integrated circuit, which is effective when applied to a processing technique for a gate electrode or the like. In the patterning of a gate stack film having a high-k gate insulating film and a metal electrode film in a memory region, etching for a cut region between adjacent gate electrodes is performed first using a first resist film and, after the first resist film that is no longer needed is removed, etching for a line and space pattern is performed using a second resist film.
摘要翻译：提供一种半导体集成电路的制造方法，其在应用于栅电极等的处理技术时是有效的。在存储区域中具有高k栅极绝缘膜和金属电极膜的栅极叠层膜的图案化中，首先使用第一抗蚀剂膜进行在相邻栅极之间的切割区域的蚀刻，并且在第一抗蚀剂膜不再需要的是不需要的，使用第二抗蚀剂膜进行线和空间图案的蚀刻。

2. 发明授权

US08308156B2 Feeding mechanism for printer 有权
标题翻译：打印机进纸机构
公开(公告)号：US08308156B2
公开(公告)日：2012-11-13
申请号：US12591063
申请日：2009-11-06
申请人： Masaaki Shinohara
发明人： Masaaki Shinohara
IPC分类号： B65H29/32
CPC分类号： B65H5/224 , B41J11/0005 , B41J11/007 , B41J11/0085 , B41J11/06 , B65H5/025 , B65H2404/132 , B65H2406/322
摘要： A feeding apparatus for print media comprises a pressure roller that is provided at an upstream side of an image forming section in a feeding direction of the print media and rotates with being pressed onto an upper surface of a feeding path. The pressure roller includes a plurality of unit rollers aligned along a primary sweeping direction perpendicular to the feeding direction. A center unit roller of the unit rollers is made wider than other unit rollers in the primary sweeping direction. According to the apparatus, cocklings on print media can be removed at desired portions with a simple configuration by controlling suction forces due to varying relative positions to suction ports. Therefore, flatten state of print media in the image forming section can be easily ensured.
摘要翻译：用于打印介质的进给装置包括：加压辊，其设置在图像形成部分的沿打印介质的进给方向的上游侧，并且被旋转并被压靠在进给路径的上表面上。加压辊包括沿垂直于进给方向的主扫掠方向排列的多个单位辊。单位辊的中心单位辊在主扫描方向上比其他单位辊宽。根据该装置，可以通过控制由于与抽吸端口的相对位置的变化而引起的吸力而以简单的结构在期望的部分移除打印介质上的悬挂物。因此，可以容易地确保图像形成部中的打印介质的平坦化状态。

3. 发明申请

US20120188314A1 INKJET PRINTING APPARATUS 审中-公开
标题翻译：喷墨打印设备
公开(公告)号：US20120188314A1
公开(公告)日：2012-07-26
申请号：US13339771
申请日：2011-12-29
申请人： Tomoyuki AKIYAMA , Masaaki SHINOHARA
发明人： Tomoyuki AKIYAMA , Masaaki SHINOHARA
IPC分类号： B41J2/175
CPC分类号： B41J2/175 , B41J2/18 , B41J29/38
摘要： An inkjet printing apparatus includes: an inkjet head configured to discharge ink; a first tank configured to store ink to be supplied to the inkjet head; a second tank configured to store ink not consumed by the inkjet head; an ink circulation path for circulation of ink among the first tank, the inkjet head, and the second tank; a pressurizer configured to provide the first and second tanks with a pressure for the circulation of ink through the ink circulation path; a first pressure adjuster configured to adjust a pressure inside the first tank during the circulation of ink; and a second pressure adjuster configured to adjust a pressure inside the second tank during the circulation of ink.
摘要翻译：喷墨打印设备包括：喷墨头，其被配置为排出墨; 第一罐，被配置为存储要供应到所述喷墨头的油墨; 第二罐，被配置为存储未被所述喷墨头消耗的油墨; 用于在第一罐，喷墨头和第二罐之间循环墨的油墨循环路径; 加压器，其构造成为所述第一和第二罐提供用于通过所述油墨循环路径循环墨水的压力; 第一压力调节器，其构造成在墨水循环期间调节第一罐内的压力; 以及第二压力调节器，其构造成在油墨循环期间调节第二罐内的压力。

4. 发明授权

US08003301B2 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08003301B2
公开(公告)日：2011-08-23
申请号：US12003887
申请日：2008-01-03
申请人： Akira Imai , Masaaki Shinohara
发明人： Akira Imai , Masaaki Shinohara
IPC分类号： G03F7/26
CPC分类号： G03F1/70
摘要： A manufacturing method for a semiconductor device having patterns including two adjacent sides forming a corner portion with an external angle and a periodic pattern with a high density arrangement in the same layer is provided with (a) the step of exposing the first divided pattern including a first side which is obtained by dividing the pattern including two sides and the region which corresponds to a first thinned out pattern from which the periodic pattern is thinned out to light through a first mask having a first mask pattern, and (b) the step of exposing the second divided pattern including a second side which is obtained by dividing the pattern including two sides and the region which corresponds to a second thinned out pattern which is obtained by thinning out the periodic pattern to light through a first mask having a second mask pattern.
摘要翻译：具有图案的半导体器件的制造方法具有包括在相同层中形成具有外部角度的角部和具有高密度布置的周期性图案的两个相邻侧的图案，其具有（a）将包括第一分割图案的第一分割图案通过将具有第一掩模图案的第一掩模将包括两侧的图案和对应于周期性图案被稀疏的第一稀疏图案的区域分割成光，获得第一面，以及（b）曝光第二分割图案，其包括通过将包括两侧的图案和对应于通过将具有第二掩模图案的第一掩模通过将周期性图案细化成光而获得的第二细化图案的区域而获得的第二面。

5. 发明授权

US07947764B2 Cationic electrodeposition coating compositions 有权
标题翻译：阳离子电沉积涂料组合物
公开(公告)号：US07947764B2
公开(公告)日：2011-05-24
申请号：US11485476
申请日：2006-07-13
申请人： Masaaki Shinohara , Toshiharu Soga , Naoya Haruta
发明人： Masaaki Shinohara , Toshiharu Soga , Naoya Haruta
IPC分类号： C04B9/02
CPC分类号： H01B1/122 , H01B1/22 , H01B1/24 , H01M8/0206 , H01M8/0213 , H01M8/0226 , H01M8/0228
摘要： This invention provides a cationic electrodeposition coating composition which exhibits high paint stability, forms coating film excelling in conductivity, intimate adhesion, corrosion resistance, finished appearance and acid resistance, and is capable of forming uniform electrocoated film also on substrates having uneven surfaces, characterized by comprising a conductive filler dispersion paste, base resin and a curing agent, said paste being formed by dispersing a conductive filler (A) composed of high conductive carbon black (a1) and at least one conductive powder (a2) selected from furnace black, graphite and conductive whisker, using a pigment-dispersing resin (B), the composition (i) containing 30-100 wt parts of a conductive filler (A) which contains at least 2 wt parts of high conductive carbon black (a1), per 100 wt parts of combined solid content of the base resin and the curing agent, (ii) the weight ratio of the conductive powder (a2)/high conductive carbon black (a1) being within a range of 0.4-20, and (iii) the pigment-dispersing resin (B) being acrylic resin-derived pigment-dispersing resin formed by copolymerization of (meth)acrylic monomer (b1) which is modified with mono- or poly-alkylene glycol or a monoether derivative thereof; nitrogen-containing, radical-polymerizable unsaturated monomer (b2) and other radical-polymerizable unsaturated monomer (b3).
摘要翻译：本发明提供了一种阳离子电沉积涂料组合物，其表现出高的涂料稳定性，形成了导电性优良，粘附力强，耐腐蚀性，成品外观和耐酸性优异的涂膜，并且还能够在具有不均匀表面的基材上形成均匀的电涂膜，包括导电填料分散浆料，基础树脂和固化剂，所述糊料通过将由高导电性炭黑（a1）组成的导电填料（A）和至少一种选自炉黑的导电粉末（a2），石墨和导电晶须，使用颜料分散树脂（B），组合物（i）含有30-100重量份含有至少2重量份高导电性炭黑（a1）的导电填料（A），每100重量份基础树脂和固化剂的固体成分的重量份，（ii）导电性粉末（a2）/高导电性炭黑（a1）的重量比为（ⅲ）颜料分散树脂（B）是由（甲基）丙烯酸单体（b1）与单 - 或多 - 甲基丙烯酸改性共聚形成的丙烯酸树脂衍生的颜料分散树脂，亚烷基二醇或其单醚衍生物; 含氮自由基聚合性不饱和单体（b2）等自由基聚合性不饱和单体（b3）。

6. 发明授权

US07740351B2 Ink-jet printing machine and printing method 有权
标题翻译：喷墨打印机和打印方式
公开(公告)号：US07740351B2
公开(公告)日：2010-06-22
申请号：US11589741
申请日：2006-10-31
申请人： Masaaki Shinohara , Kinya Ono
发明人： Masaaki Shinohara , Kinya Ono
IPC分类号： B41J2/01
CPC分类号： B41J11/007 , B41J11/0095
摘要： An ink-jet printing machine has: a transfer belt that transfers a printing sheet; a sheet feeding unit that feeds the printing sheet; an ink-jet head that performs ink ejection on the printing sheet; a SS roller that presses a central region of the printing sheet between the sheet feeding unit and the ink-jet head; a printing sheet sensor that detects the deformation of the printing sheet; and a guide roller that presses the printing sheet. The rate of a distance A between the SS roller and the printing sheet sensor to a distance B between the upper surface of a transfer belt and the lower end of the printing sheet sensor is approximately equal to the rate of a distance A′ between the guide roller and the ink-jet head to a distance B′ between the upper surface of the transfer belt and the lower end of the ink-jet head.
摘要翻译：喷墨打印机具有：转印带，其传送打印纸; 送纸单元，其供给打印纸; 喷墨头，其在所述打印纸上执行喷墨; SS辊，其在片材进给单元和喷墨头之间按压打印片材的中心区域; 检测印刷纸的变形的印刷纸传感器; 以及压印印刷纸的导向辊。 SS辊和打印纸传感器之间的距离A的比率与转印带的上表面和打印纸传感器的下端之间的距离B近似等于引导件之间的距离A' 辊和喷墨头在转印带的上表面和喷墨头的下端之间的距离B'处。

7. 发明授权

US07348245B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07348245B2
公开(公告)日：2008-03-25
申请号：US11443257
申请日：2006-05-31
申请人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
发明人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
IPC分类号： H01L21/8234
CPC分类号： H01L27/11568 , G11C11/005 , G11C16/0466 , H01L27/105 , H01L27/11573 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： Manufacturing method of a semiconductor device for forming a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, including forming a gate insulating film over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the gate electrode associated with each of the first through third field effect transistors. The sidewall spacers of at least the first field effect transistor have a different width than that of at least the second field effect transistor, the gate electrode of the third field effect transistor has a different length than that of at least the first field effect transistor for memory and the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor.
摘要翻译：一种半导体器件的制造方法，用于形成包括用于存储器的第一场效应晶体管的可重写非易失性存储单元，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，包括在半导体衬底上形成栅极绝缘膜栅极绝缘膜上的栅电极和与第一至第三场效应晶体管中的每一个相关联的栅电极的侧壁上的侧壁隔离物。至少第一场效应晶体管的侧壁间隔物具有与至少第二场效应晶体管不同的宽度，第三场效应晶体管的栅电极具有与至少第一场效应晶体管不同的长度，存储器和第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的厚度。

8. 发明申请

US20060214256A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060214256A1
公开(公告)日：2006-09-28
申请号：US11443252
申请日：2006-05-31
申请人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
发明人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
IPC分类号： H01L29/00
CPC分类号： H01L27/11568 , H01L27/115
摘要： A semiconductor device having a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, the transistors each including a gate insulating film formed over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the corresponding gate electrode. Sidewall spacers of the first field effect transistor are different from those of at least the second field effect transistors. Also, the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor and the gate electrode of the third field effect transistor has a length different from that of either the first field effect transistor or second field effect transistor. The sidewall spacers of the first field effect transistor include a first silicon oxide film, a first silicon nitride film over the first silicon oxide film and a second silicon oxide film over the first silicon nitride film.
摘要翻译：一种半导体器件，具有可重写非易失性存储单元，其包括用于存储的第一场效应晶体管，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，所述晶体管包括形成在半导体衬底上的栅极绝缘膜，在栅极绝缘膜上方的栅电极和相应栅电极的侧壁上的侧壁间隔物。第一场效应晶体管的侧壁间隔物与至少第二场效应晶体管的侧壁间隔物不同。此外，第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的栅极绝缘膜，第三场效应晶体管的栅电极的长度与第一场效应晶体管或第二场效应晶体管的长度不同效应晶体管。第一场效应晶体管的侧壁间隔物包括第一氧化硅膜，第一氧化硅膜上的第一氮化硅膜和位于第一氮化硅膜上的第二氧化硅膜。

9. 发明授权

US4436849A Aqueous resin composition 失效
标题翻译：水性树脂组合物
公开(公告)号：US4436849A
公开(公告)日：1984-03-13
申请号：US431080
申请日：1982-09-30
申请人： Tetsuo Aihara , Yasuharu Nakayama , Koichi Umeyama , Kozo Sawada , Masaaki Shinohara
发明人： Tetsuo Aihara , Yasuharu Nakayama , Koichi Umeyama , Kozo Sawada , Masaaki Shinohara
IPC分类号： C08F2/26 , C08G63/685 , C09D167/08 , C08L67/08 , C09D3/68
CPC分类号： C08G63/6854 , C09D167/08
摘要： An aqueous resin composition comprising a neutralization product of an isocyanurate group-containing maleinized alkyd resin having an acid value of 5 to 65 in an aqueous medium, said maleinized alkyd resin being prepared by maleinizing an alkyd resin having an acid value of not more than 10 and a hydroxyl value of not more than 10 which is the product of condensation reaction of(A) 20 to 60% by weight of at least one of drying or semi-drying oils and fatty acids,(B) 10 to 45% by weight of at least one tris(hydroxyalkyl) isocyanurate,(C) 0 to 45% by weight of at least one polyhydric alcohol other than the component (B),(D) 10 to 45% by weight of at least one polybasic acid, and(E) 0 to 15% by weight of at least one monobasic acidand an aqueous emulsion resin composition obtained by emulsion polymerization of a radical polymerizable unsaturated monomer in an aqueous medium in the presence of the aforesaid neutralization product. The above aqueous resin compositions can give a coating having excellent corrosion resistance and fast-drying property.
摘要翻译：一种含水树脂组合物，其包含在水性介质中含有酸值为5〜65的含异氰脲酸酯基的马来酸化醇酸树脂的中和产物，所述马来酸化的醇酸树脂通过使酸值不大于10的醇酸树脂和（A）20至60重量％的干燥或半干性油和脂肪酸中的至少一种的缩合反应的产物的羟值为10以下，（B）10〜45重量％的至少一种三（羟烷基）异氰脲酸酯，（C）0至45重量％的除（B）成分以外的至少一种多元醇，（D）10至45重量％的至少一种多元酸，以及（E）0〜15重量％的至少一种一元酸和通过自由基聚合性不饱和单体在水性介质中在上述中和产物的存在下乳液聚合得到的水性乳液树脂组合物。上述水性树脂组合物可以得到具有优异的耐腐蚀性和快干性能的涂层。

10. 发明授权

US08754471B2 Semiconductor device having gate in recess 有权
标题翻译：半导体器件具有凹槽中的栅极
公开(公告)号：US08754471B2
公开(公告)日：2014-06-17
申请号：US13040610
申请日：2011-03-04
申请人： Toshiaki Iwamatsu , Kozo Ishikawa , Masashi Kitazawa , Kiyoshi Hayashi , Takahiro Maruyama , Masaaki Shinohara , Kenji Kawai
发明人： Toshiaki Iwamatsu , Kozo Ishikawa , Masashi Kitazawa , Kiyoshi Hayashi , Takahiro Maruyama , Masaaki Shinohara , Kenji Kawai
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L29/66 , H01L29/78
CPC分类号： H01L29/66621 , H01L21/28 , H01L29/66795 , H01L29/772 , H01L29/7834 , Y02E10/50
摘要： There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.
摘要翻译：提供了可以在不劣化特性的情况下小型化的半导体器件及其制造方法。半导体器件包括：主表面，源极区域和漏极区域在主表面彼此分离形成的半导体衬底;形成在源区域和漏极区域之间的主表面上的栅电极层;第一形成为与源极区域的表面接触的导电层，以及形成为与漏极区域的表面接触的第二导电层。在主表面上形成凹部，以便通过栅极电极层下面的部分从第一导电层和源极区域之间的接触区域延伸到第二导电层和漏极区域之间的接触区域。

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