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1. 发明授权

US08693099B2 Antireflection film 有权
标题翻译：防反射膜
公开(公告)号：US08693099B2
公开(公告)日：2014-04-08
申请号：US11782395
申请日：2007-07-24
申请人： Toshitaka Kawashima , Shigeo Kubota , Naoya Eguchi , Koichi Tatsuki , Junichi Ohsako
发明人： Toshitaka Kawashima , Shigeo Kubota , Naoya Eguchi , Koichi Tatsuki , Junichi Ohsako
IPC分类号： G02B1/10
CPC分类号： G02B1/115 , C03C17/36 , C03C17/3621 , C03C17/3628 , C03C17/3649 , C03C2217/734
摘要： An antireflection film capable of reliably preventing light (or laser light), which is incident on a glass substrate and which reaches a metal film, from being reflected by the metal film. The antireflection film provided between a metal film having a complex refractive index represented by NM=nM−i·km and a glass substrate having a refractive index NG includes, from the metal film side: (A) a first dielectric layer having a refractive index N1; (B) a second dielectric layer provided on the first dielectric layer and having a refractive index N2; and (C) a third dielectric layer provided on the second dielectric layer and having a refractive index N3, in which N1 NG, N2 NG hold. Accordingly, light which is incident on the glass substrate and which reaches the metal film is prevented from being reflected by the metal film.
摘要翻译：能够可靠地防止入射到玻璃基板上并到达金属膜的光（或激光）被金属膜反射的防反射膜。设置在具有由NM = nM-i·km表示的复折射率的金属膜和具有折射率NG的玻璃基板之间的抗反射膜包括从金属膜侧：（A）具有折射率的第一介电层 N1; （B）设置在第一电介质层上并具有折射率N2的第二电介质层; 和（C）设置在第二电介质层上并具有折射率N3的第三电介质层，其中N1 NG，N2 NG成立。因此，防止入射到玻璃基板上并到达金属膜的光被金属膜反射。

2. 发明申请

US20080024867A1 ANTIREFLECTION FILM, METHOD FOR HEATING METAL FILM, AND HEATING APPARATUS 有权
标题翻译：抗反射膜，加热金属膜的方法和加热装置
公开(公告)号：US20080024867A1
公开(公告)日：2008-01-31
申请号：US11782395
申请日：2007-07-24
申请人： Toshitaka Kawashima , Shigeo Kubota , Naoya Eguchi , Koichi Tatsuki , Junichi Ohsako
发明人： Toshitaka Kawashima , Shigeo Kubota , Naoya Eguchi , Koichi Tatsuki , Junichi Ohsako
IPC分类号： G02B1/11
CPC分类号： G02B1/115 , C03C17/36 , C03C17/3621 , C03C17/3628 , C03C17/3649 , C03C2217/734
摘要： There is provided an antireflection film capable of reliably preventing light (or laser light), which is incident on a glass substrate and which reaches a metal film, from being reflected by the metal film. The antireflection film provided between a metal film having a complex refractive index represented by NM=nM−i·km and a glass substrate having a refractive index NG includes, from the metal film side: (A) a first dielectric layer having a refractive index N1; (B) a second dielectric layer provided on the first dielectric layer and having a refractive index N2; and (C) a third dielectric layer provided on the second dielectric layer and having a refractive index N3, in which N1 NG, N2 NG hold. Accordingly, light which is incident on the glass substrate and which reaches the metal film is prevented from being reflected by the metal film.
摘要翻译：提供了能够可靠地防止入射到玻璃基板上并且到达金属膜的光（或激光）被金属膜反射的抗反射膜。该反射防止膜设置在具有由N M M = N M-M m N N表示的复折射率的金属膜和具有折射率N＆lt; N＆gt;包括从金属膜侧：（A）具有折射率N 1的第一介电层; （B）设置在第一电介质层上并具有折射率N 2的第二电介质层; 和（C）设置在所述第二电介质层上并具有折射率N 3 N 3的第三电介质层，其中N 1 < N 1，N 2，N 3，N 3，N 3，N 3，N 3， >> N 保持。因此，防止入射到玻璃基板上并到达金属膜的光被金属膜反射。

3. 发明授权

US06780692B2 Laser annealing apparatus and method of fabricating thin film transistor 失效
标题翻译：激光退火装置及制造薄膜晶体管的方法
公开(公告)号：US06780692B2
公开(公告)日：2004-08-24
申请号：US10215049
申请日：2002-08-08
申请人： Koichi Tatsuki , Koichi Tsukihara , Naoya Eguchi
发明人： Koichi Tatsuki , Koichi Tsukihara , Naoya Eguchi
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/78636 , H01L29/78678
摘要： In a method of fabricating a thin film transistor through conversion of an amorphous silicon film into a polysilicon film to be an active layer of the thin film transistor by a laser annealing treatment, a laser annealing apparatus comprising a plurality of semiconductor laser devices arranged performs the laser annealing treatment by irradiating the surface of the amorphous silicon film with laser light uniformized in the light intensity of the laser light radiated onto the surface of the amorphous silicon film, whereby the crystal grain diameter of the polysilicon film obtained through recrystallization is uniformized, and it is possible to obtain a thin film transistor with transistor characteristics enhanced by using the polysilicon film as the active layer.
摘要翻译：在通过激光退火处理将非晶硅膜转换为多晶硅膜以成为薄膜晶体管的有源层来制造薄膜晶体管的方法中，包括布置的多个半导体激光器件的激光退火装置执行通过以照射到非晶硅膜的表面上的激光的光强度均匀化的激光照射非晶硅膜的表面的激光退火处理，由此通过重结晶获得的多晶硅膜的晶粒粒径均匀化，并且可以通过使用多晶硅膜作为有源层来获得具有增强的晶体管特性的薄膜晶体管。

4. 发明授权

US06933185B2 Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor 有权
标题翻译：多晶硅评价方法，多晶硅检查装置及薄膜晶体管的制备方法
公开(公告)号：US06933185B2
公开(公告)日：2005-08-23
申请号：US10394223
申请日：2003-03-24
申请人： Hiroyuki Wada , Yoshimi Hirata , Ayumu Taguchi , Koichi Tatsuki , Nobuhiko Umezu , Shigeo Kubota , Tetsuo Abe , Akifumi Ooshima , Tadashi Hattori , Makoto Takatoku , Yukiyasu Sugano
发明人： Hiroyuki Wada , Yoshimi Hirata , Ayumu Taguchi , Koichi Tatsuki , Nobuhiko Umezu , Shigeo Kubota , Tetsuo Abe , Akifumi Ooshima , Tadashi Hattori , Makoto Takatoku , Yukiyasu Sugano
IPC分类号： H01L21/263 , H01L21/66 , C30B28/02 , H01L21/786
CPC分类号： H01L22/12
摘要： The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
摘要翻译：对通过非晶硅膜的准分子激光退火而形成的多晶硅膜的状态进行评价。当非晶硅膜退火以形成多晶硅膜时，线性或周期性本身就取决于退火期间施加到非晶硅的能量而形成的多晶硅膜的膜表面的空间结构。该线性或周期性被处理为图像并且通过利用线性或周期性从图像数字地表示。基于数值结果检查多晶硅膜的状态。

5. 发明授权

US06248167B1 Method for single crystal growth and growth apparatus 有权
标题翻译：单晶生长和生长装置的方法
公开(公告)号：US06248167B1
公开(公告)日：2001-06-19
申请号：US09238901
申请日：1999-01-28
申请人： Tsutomu Okamoto , Koichi Tatsuki , Shigeo Kubota
发明人： Tsutomu Okamoto , Koichi Tatsuki , Shigeo Kubota
IPC分类号： C30B708
CPC分类号： C30B15/00 , C30B29/10
摘要： Disclosed is a method for the growth of a single crystal having excellent crystallinity, uniform quality in the inside thereof and hence excellently uniform optical properties, the method enabling an improvement in yields. The invention resides in a method for the growth of a single crystal of &bgr;-type barium borate (&bgr;-BaB2O4), the method comprising heating a crucible 6 indirectly to grow a &bgr;-BaB2O4 single crystal 21 from a melt of barium borate (BaB2O4) contained in the crucible and using no flux by using a seed crystal 9 of &bgr;-BaB2O4.
摘要翻译：公开了一种生长具有优异结晶性，在其内部质量均匀且因此具有优异均匀的光学性能的单晶的方法，该方法能够提高产量。本发明涉及一种用于生长β型硼酸钡（β-BaB 2 O 4）的单晶的方法，该方法包括间接加热坩埚6以从硼酸钡（BaB 2 O 4）的熔体中生长β-BaB 2 O 4单晶21 ），并且通过使用β-BaB 2 O 4的晶种9不使用助熔剂。

6. 发明授权

US5370076A Method of producing single crystal of KTiOPO.sub.4 失效
标题翻译：生产KTiOPO4单晶的方法
公开(公告)号：US5370076A
公开(公告)日：1994-12-06
申请号：US056530
申请日：1993-05-05
申请人： Tsutomu Okamoto , Koji Watanabe , Tatsuo Fukui , Yasushi Minoya , Koichi Tatsuki , Shigeo Kubota
发明人： Tsutomu Okamoto , Koji Watanabe , Tatsuo Fukui , Yasushi Minoya , Koichi Tatsuki , Shigeo Kubota
IPC分类号： C30B15/00 , C30B9/00 , C30B29/22 , C30B29/32 , G02F1/35 , G02F1/355 , C30B9/12
CPC分类号： C30B9/00 , C30B29/14
摘要： A method of growing a single crystal of KTiOPO.sub.4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO.sub.4 is carried out by melting a KTiOPO.sub.4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K.sub.2 O, P.sub.2 O.sub.5 and TiO.sub.2 contained in the melt fall within a region surrounded by six point in a K.sub.2 O-P.sub.2 O.sub.5 -TiO.sub.2 ternary phase diagram of A (K.sub.2 O:0.4150, P.sub.2 O.sub.5 :0.3906, TiO.sub.2 : 0.1944), B (K.sub.2 O:0.3750, P.sub.2 O.sub.5 : 0.3565, TiO.sub.2 : 0.2685), C (K.sub.2 O: 0.3750, P.sub.2 O.sub.5 : 0.3438, TiO.sub.2 : 0.2813), D (K.sub.2 O: 0.3850, P.sub.2 O.sub.5 : 0.3260, TiO.sub.2 : 0.2890), E (K.sub.2 O: 0.4000, P.sub.2 O.sub.5 : 0.3344, TiO.sub.2 : 0.2656), and F (K.sub.2 O: 0.4158, P.sub.2 O.sub.5 : 0.3744, TiO.sub.2 : 0.2098). In addition, K.sub.15 P.sub.13 O.sub.40 or the same composition produced by melting is used as the flux, and the proportion of a KTiOPO.sub.4 element in a composition of the melt is prescribed to 83.5 to 90.0 mol %. The seed crystal is set so that a C axis is in a direction perpendicular to a melt surface. Then, the seed crystal contacted to the melt is rotated and slowly cooled. Thus, a single crystal of KTiOPO.sub.4 of single domain at the end of growth can be produced.
摘要翻译：公开了一种生长作为非线性光学材料的KTiOPO4单晶的方法。通过用助熔剂熔化KTiOPO 4材料以产生熔体，然后使晶种接触熔体，并通过在饱和温度或更低温度下缓慢冷却来进行KTiOPO4单晶的生长。此时，K2O，P2O5和TiO 2的摩尔分数在A（K2O：0.4150，P2O5：0.3906，TiO 2：0.1944），K 2 O 3的K 2 O 5 - （K2O：0.3750，P2O5：0.3565，TiO2：0.2685），C（K2O：0.3750，P2O5：0.3438，TiO2：0.2813），D（K2O：0.3850，P2O5：0.3260，TiO2：0.2890），E（K2O： P 2 O 5：0.3344，TiO 2：0.2656）和F（K 2 O：0.4158，P 2 O 5：0.3744，TiO 2：0.2098）。此外，将K15P13O40或通过熔融制造的相同组成用作助熔剂，并且将熔体组成中的KTiOPO 4元素的比例规定为83.5〜90.0mol％。晶种被设定为使得C轴在垂直于熔体表面的方向上。然后，将与熔体接触的晶种旋转并缓慢冷却。因此，可以生产在生长结束时单畴KTiOPO4的单晶。

7. 发明申请

US20050252894A1 Laser annealing device and method for producing thin-film transistor 审中-公开
标题翻译：激光退火装置及薄膜晶体管的制造方法
公开(公告)号：US20050252894A1
公开(公告)日：2005-11-17
申请号：US11177574
申请日：2005-07-08
申请人： Yutaka Imai , Nobuhiko Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
发明人： Yutaka Imai , Nobuhiko Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
IPC分类号： B23K26/06 , B23K26/067 , H01L21/20 , H01L21/268 , B23K26/02
CPC分类号： B23K26/0613 , B23K26/0604 , B23K26/0622 , B23K26/067 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A laser annealing device (10) includes a laser oscillator (12), radiating a pulsed laser light beam of a preset period, and an illuminating optical system (15) for illuminating a pulsed laser light beam to an amorphous silicon film (1). The illuminating optical system (15) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film (1). The laser oscillator (12) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film (1) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.
摘要翻译：激光退火装置（10）包括激光振荡器（12），辐射预设周期的脉冲激光束，以及用于将脉冲激光束照射到非晶硅膜（1）的照明光学系统（15）。照明光学系统（15）管理用于移动激光光斑的控制，使得多个光脉冲将被照射在非晶硅膜（1）上的相同位置。激光振荡器（12）辐射比参考周期短的脉冲发生时段的激光束。参考周期是从在膜（1）的表面上的脉冲激光束的照射的辐射定时直到由于激光束照射到基板温度升高的定时的时间间隔原始基板温度。

8. 发明授权

US06240111B1 Laser beam generating apparatus and method 有权
标题翻译：激光束发生装置及方法
公开(公告)号：US06240111B1
公开(公告)日：2001-05-29
申请号：US09289244
申请日：1999-04-09
申请人： Shigeo Kubota , Nobuhiko Umezu , Tatsuo Fukui , Hisashi Masuda , Koichi Tatsuki
发明人： Shigeo Kubota , Nobuhiko Umezu , Tatsuo Fukui , Hisashi Masuda , Koichi Tatsuki
IPC分类号： H01S310
CPC分类号： G02F1/37
摘要： A laser beam generating apparatus comprising a first laser beam source oscillating in a near infrared-ray region of, for example, an Nd:YAG laser to generate a laser beam, a second higher harmonic wave generator for generating, from the laser beam emitted from the first laser beam source, a second higher harmonic wave having a half wavelength of the laser beam emitted from the first laser beam source, a splitter for splitting the second higher harmonic wave, a second laser beam source which is supplied with a part of the second higher harmonic wave thus split is input to a Ti:Sapphire laser to be excited and oscillated, thereby generating a laser beam of substantially 700 nm in wavelength, a fourth higher harmonic wave generator for generating a fourth higher harmonic wave from the remaining part of the second higher harmonic wave thus split, a sum frequency mixing composed of a BBO crystal device to which the laser beam of substantially 700 nm in wavelength and the fourth higher harmonic wave are input, and a controller for controlling the temperature of the BBO crystal device to substantially 100K or less, thereby generating a laser beam of substantially 193 nm in wavelength as an output of the sum frequency mixing.
摘要翻译：一种激光束产生装置，包括：在例如Nd：YAG激光器的近红外线区域中振荡的第一激光束源，以产生激光束;第二高次谐波发生器，用于从从第一激光束源，具有从第一激光束源发射的激光束的半波长的第二高次谐波，用于分离第二高次谐波的分离器，被提供有第一激光束的一部分的第二激光束源将这样分割的第二高次谐波输入到激发和振荡的Ti：蓝宝石激光器中，从而产生大致为700nm的波长的激光束;第四高次谐波发生器，用于从剩余部分产生第四高次谐波这样分裂的第二高次谐波，由BBO晶体器件组成的和频混频，其中波长大致为700nm的激光束和第四较高谐波尼康波输入，以及用于将BBO晶体装置的温度控制在基本上为100K以下的控制器，由此产生大致193nm的波长的激光束作为和频混合的输出。

9. 发明申请

US20070178674A1 LASER ANNEALING DEVICE AND METHOD FOR PRODUCING THIN-FILM TRANSISTOR 审中-公开
标题翻译：激光退火装置及其生产薄膜晶体管的方法
公开(公告)号：US20070178674A1
公开(公告)日：2007-08-02
申请号：US11690232
申请日：2007-03-23
申请人： Yutaka Imai , Nobuhito Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
发明人： Yutaka Imai , Nobuhito Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
IPC分类号： H01L21/268
CPC分类号： B23K26/0613 , B23K26/0604 , B23K26/0622 , B23K26/067 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A laser annealing device (10) includes a laser oscillator (12), radiating a pulsed laser light beam of a preset period, and an illuminating optical system (15) for illuminating a pulsed laser light beam to an amorphous silicon film (1). The illuminating optical system (15) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film (1). The laser oscillator (12) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film (1) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.
摘要翻译：激光退火装置（10）包括激光振荡器（12），辐射预设周期的脉冲激光束，以及用于将脉冲激光束照射到非晶硅膜（1）的照明光学系统（15）。照明光学系统（15）管理用于移动激光光斑的控制，使得多个光脉冲将被照射在非晶硅膜（1）上的相同位置。激光振荡器（12）辐射比参考周期短的脉冲发生时段的激光束。参考周期是从在膜（1）的表面上的脉冲激光束的照射的辐射定时直到由于激光束照射到基板温度升高的定时的时间间隔原始基板温度。

10. 发明授权

US07154673B2 Light irradiator 失效
标题翻译：光照射器
公开(公告)号：US07154673B2
公开(公告)日：2006-12-26
申请号：US10533946
申请日：2003-10-24
申请人： Koichi Tsukihara , Koichi Tatsuki
发明人： Koichi Tsukihara , Koichi Tatsuki
IPC分类号： G02B27/10
CPC分类号： B23K26/0608 , B23K26/0604 , H01L21/268
摘要： A light illuminating apparatus used for a laser annealing apparatus includes a first light splitting unit (16) and a second light splitting unit (20) for splitting a sole laser beam into n laser beams, and a synthesis unit (21) for synthesizing an m'th laser beam, radiated from the first light splitting unit (16), and an m'th laser beam radiated from the second light splitting unit (20), to each other, where m is an integer not less than 1 and not larger than n. The first light splitting unit (16) and the second light splitting unit (20) are formed by the same optical components and are arrayed inverted with respect to each other.
摘要翻译：用于激光退火装置的光照射装置包括：第一分光单元（16）和用于将唯一激光束分割为n个激光束的第二分光单元（20），以及合成单元（21），用于合成m 从第一分光单元（16）辐射的第一激光束和从第二分光单元（20）辐射的第m个激光束彼此相对，其中m是不小于1且不大于比n。第一分光单元（16）和第二分光单元（20）由相同的光学部件形成，并相对于彼此反转。

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