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1. 发明申请

US20060234440A1 ALIGNMENT MARK AND ALIGNMENT METHOD FOR THE FABRICATION OF TRENCH-CAPACITOR DRAM DEVICES 有权
标题翻译：用于制造TRENCH-CAPACITOR DRAM器件的对准标记和对准方法
公开(公告)号：US20060234440A1
公开(公告)日：2006-10-19
申请号：US11160683
申请日：2005-07-05
申请人： Yuan-Hsun WU , An-Hsiung Liu , Chiang-Lin Shih , Pei-Ing Lee , Hui-Min Mao , Lin-Chin Su
发明人： Yuan-Hsun WU , An-Hsiung Liu , Chiang-Lin Shih , Pei-Ing Lee , Hui-Min Mao , Lin-Chin Su
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： G03F9/7084 , G03F7/70633 , G03F9/708 , H01L23/544 , H01L27/1087 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A small-size (w
摘要翻译：提出了与“k1工艺”结合的小尺寸（w <0.5微米）对准标记，其特别适用于需要高精度AA-DT对准的沟槽电容器DRAM器件的制造。利用“k1工艺”来蚀刻散布在对准标记沟槽中的多晶硅，并且在AA图案转印之前刷新沟槽轮廓，从而提高晶片对准精度和精度。

2. 发明申请

US20050214651A1 APERTURE PLATE FOR OPTICAL LITHOGRAPHY SYSTEMS 审中-公开
标题翻译：光学光刻系统光栅板
公开(公告)号：US20050214651A1
公开(公告)日：2005-09-29
申请号：US10708780
申请日：2004-03-25
申请人： Yuan-Hsun WU
发明人： Yuan-Hsun WU
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70091
摘要： A pupil aperture plate situated on a light path of an optical lithography system for providing specific illumination patterns is disclosed. The pupil aperture plate includes a plate body having thereon a pole aperture (defined by σinner) located at the center of the plate. A set of four sector apertures, each of which has an opening angle θ, radiating from a reference center point of the pole aperture. The distance of the sector aperture from the reference center point of the pole aperture is defined by σouter. The pupil aperture plate provides Bow-Pole and Quasar illumination patterns in combination with conventional and annular illuminations, respectively.
摘要翻译：公开了一种位于光刻系统的光路上用于提供特定照明图案的光瞳孔板。瞳孔孔板包括板体，其上具有位于板的中心的极孔（由西格玛内部限定）。一组四个扇形孔，每个具有从杆孔的参考中心点辐射的开口角度θ。扇形孔与杆孔的参考中心点的距离由西格玛外部定义。瞳孔孔板分别提供与常规和环形照明组合的弓形杆和类星体照明图案。

3. 发明申请

US20050259237A1 METHOD FOR OPTIMIZING NILS OF EXPOSED LINES 有权
标题翻译：优化裸露线条的方法
公开(公告)号：US20050259237A1
公开(公告)日：2005-11-24
申请号：US10709651
申请日：2004-05-19
申请人： Yuan-Hsun WU
发明人： Yuan-Hsun WU
IPC分类号： G03B27/32 , G03B27/42 , G03F1/14
CPC分类号： G03F1/36
摘要： A method for optimizing NILS of exposed lines includes providing a photomask layout which has a first straight line and a second straight line parallel with the first straight line and is applied to a Quasar 90 illumination, and adding a first assist pattern between the first and second straight lines, wherein the first assist pattern has a plurality of geometric patterns with similar size arranging as a line parallel with the first straight line.
摘要翻译：一种用于优化曝光线的NILS的方法包括提供光掩模布局，其具有与第一直线平行的第一直线和第二直线，并被应用于星形90照明，并且在第一与第二直线之间增加第一辅助图案直线，其中第一辅助图案具有排列成与第一直线平行的直线相同尺寸的多个几何图案。

4. 发明申请

US20060240332A1 CHROMELESS PHASE-SHIFTING MASK FOR EQUAL LINE/SPACE DENSE LINE PATTERNS 有权
标题翻译：用于平等线/空间渗透线图案的无色相移掩模
公开(公告)号：US20060240332A1
公开(公告)日：2006-10-26
申请号：US11160450
申请日：2005-06-24
申请人： Yung-Long Hung , Yuan-Hsun WU , Chia-Tsung Hung
发明人： Yung-Long Hung , Yuan-Hsun WU , Chia-Tsung Hung
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/34 , G03F1/36
摘要： A phase-shifting mask suited for equal line/space, small pitched, dense line pattern is disclosed. The phase-shifting mask includes a transparent substrate, a partially shielded mesa line pattern of first phase formed on the substrate, and a clear recessed line pattern of second phase etched into the substrate and is disposed right next to the partially shielded mesa line pattern. The partially shielded mesa line pattern has a plurality of alternating 5%-10% transmittance light-shielding regions and clear regions of the first phase. The partially shielded mesa line pattern and the clear recessed line pattern have the same line width. The light that passes through the clear regions of the first phase and the light that passes through the clear recessed line pattern of second phase have a phase difference of 180 degree.
摘要翻译：公开了适合于相等的线/空间，小直径，密集线图案的相移掩模。所述移相掩模包括透明基板，在所述基板上形成的第一相的部分屏蔽的台面线图形，以及蚀刻到所述基板中的第二相的清晰凹陷线图案，并且紧邻所述部分屏蔽的台面线图案设置。部分屏蔽的台面线图案具有多个交替的5％-10％的透光遮光区域和第一相的透明区域。部分屏蔽的台面线图案和清晰的凹陷线图案具有相同的线宽。通过第一相的透明区域的光和通过第二相的清晰凹陷线图案的光具有180度的相位差。

5. 发明申请

US20070054201A1 PHASE SHIFTING MASK FOR EQUAL LINE/SPACE DENSE LINE PATTERNS 审中-公开
标题翻译：相位线/空间深度线图案的相移面膜
公开(公告)号：US20070054201A1
公开(公告)日：2007-03-08
申请号：US11462717
申请日：2006-08-07
申请人： Yung-Long Hung , Yuan-Hsun WU , Chia-Tsung Hung
发明人： Yung-Long Hung , Yuan-Hsun WU , Chia-Tsung Hung
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/34
摘要： A phase shifting mask suited for equal line/space, small pitched, dense line pattern is disclosed. The phase shifting mask includes a transparent substrate, a partially shielded mesa line pattern of first phase formed on the substrate, and a transparent recessed line pattern of second phase etched into the substrate and is disposed right next to the partially shielded mesa line pattern. The partially shielded mesa line pattern has a plurality of alternating opaque regions and transparent regions of the first phase. The partially shielded mesa line pattern and the clear recessed line pattern have the same line width. The light that passes through the transparent regions of the first phase and the light that passes through the transparent recessed line pattern of second phase have a phase difference of 180 degree.
摘要翻译：公开了一种适用于相等的线/空间，小直径，密集线图案的相移掩模。相移掩模包括透明基板，在基板上形成的第一相的部分屏蔽的台面线图案和蚀刻到基板中的第二相的透明凹陷线图案，并且紧邻部分屏蔽的台面线图案设置。部分屏蔽的台面线图案具有多个交替的不透明区域和第一相的透明区域。部分屏蔽的台面线图案和清晰的凹陷线图案具有相同的线宽。通过第一相的透明区域的光和通过第二相的透明凹陷线图案的光具有180度的相位差。

6. 发明申请

US20060240333A1 PHASE-SHIFTING MASK FOR EQUAL LINE/SPACE DENSE LINE PATTERNS 有权
标题翻译：平面线/空间渗透线图案的相位改变掩模
公开(公告)号：US20060240333A1
公开(公告)日：2006-10-26
申请号：US11160512
申请日：2005-06-27
申请人： Yung-Long Hung , Yuan-Hsun WU
发明人： Yung-Long Hung , Yuan-Hsun WU
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/28
摘要： A phase-shifting mask suited for equal line/space, small pitched, dense line pattern is disclosed. The phase-shifting mask includes a transparent substrate, a partially shielded mesa line pattern of first phase formed on the substrate, and a 100% clear recessed line pattern of second phase etched into the substrate and is disposed right next to the partially shielded mesa line pattern. The partially shielded mesa line pattern has a plurality of alternating 45-degree, oblique areas and 100% transmittance clear regions of the first phase. The partially shielded mesa line pattern and the clear recessed line pattern have the same line width. The light that passes through the clear regions of the first phase and the light that passes through the clear recessed line pattern of second phase have a phase difference of 180 degree.
摘要翻译：公开了适合于相等的线/空间，小直径，密集线图案的相移掩模。相移掩模包括透明基板，在基板上形成的第一相的部分屏蔽的台面线图案和蚀刻到基板中的第二相的100％透明凹陷线图案，并且紧邻部分屏蔽的台面线模式。部分屏蔽的台面线图案具有第一相的多个交替的45度倾斜区域和100％透射率清晰区域。部分屏蔽的台面线图案和清晰的凹陷线图案具有相同的线宽。通过第一相的透明区域的光和通过第二相的清晰凹陷线图案的光具有180度的相位差。

7. 发明申请

US20050243440A1 APERTURE PLATE FOR LITHOGRAPHY SYSTEMS 有权
标题翻译：光刻系统的孔板
公开(公告)号：US20050243440A1
公开(公告)日：2005-11-03
申请号：US10709311
申请日：2004-04-28
申请人： Yuan-Hsun WU
发明人： Yuan-Hsun WU
IPC分类号： G02B9/00 , G02B9/08 , G03F7/20
CPC分类号： G03F7/70091 , G03F7/701
摘要： An aperture plate for lithography systems capable of improving NILS. The aperture plate includes a light-intercepting region and a light-transmitting region. The light-intercepting region has a reference center point. A horizontal reference line and a vertical reference line are defined on the light-intercepting region and intersect the reference center point. The light-transmitting region includes four pole apertures defining a central area. Two of the pole apertures are positioned on the horizontal reference line, and the other pole apertures are positioned on the vertical reference line. The light-transmitting region further includes at least a symmetric pattern aperture positioned in the central area, wherein the symmetric pattern aperture has a symmetric center overlapping the reference center point.
摘要翻译：用于能够改善NILS的光刻系统的孔板。孔板包括遮光区域和透光区域。受光区域具有参考中心点。在受光区域上定义水平参考线和垂直参考线，并与参考中心点相交。光透射区域包括限定中心区域的四个极孔。两个极孔位于水平参考线上，另一个极孔位于垂直参考线上。光透射区域还包括位于中心区域中的至少一个对称图案孔，其中对称图案孔具有与参考中心点重叠的对称中心。

8. 发明申请

US20050229147A1 TEST KET LAYOUT FOR PRECISELY MONITORING 3-FOIL LENS ABERRATION EFFECTS 有权
标题翻译：精密监测三维镜片检查效果的测试卡
公开(公告)号：US20050229147A1
公开(公告)日：2005-10-13
申请号：US10709075
申请日：2004-04-12
申请人： Yuan-Hsun WU
发明人： Yuan-Hsun WU
IPC分类号： G03F1/14 , G03F7/20 , G06F17/50
CPC分类号： G03F7/706 , G03F1/44
摘要： An H-shaped test key layout for exclusively monitoring 3-foil lens aberration effects during the fabrication of deep-trench capacitor memory devices is disclosed. The COMA lens aberration effect that used to occur along with the 3-foil lens aberration effect is now eliminated by this test key layout.
摘要翻译：公开了一种用于在制造深沟槽电容器存储器件期间专门监测3箔透镜像差效应的H形测试键布局。该测试键布局现在消除了与3箔透镜像差效应一起发生的COMA透镜像差效应。

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