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1. 发明授权

US08203389B1 Field tunable spin torque oscillator for RF signal generation 有权
标题翻译：用于RF信号产生的现场可调自旋转矩振荡器
公开(公告)号：US08203389B1
公开(公告)日：2012-06-19
申请号：US12928194
申请日：2010-12-06
申请人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
发明人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
IPC分类号： H03L7/26
CPC分类号： H03B15/006
摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.
摘要翻译：公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

2. 发明申请

US20120139649A1 FIELD TUNABLE SPIN TORQUE OSCILLATOR FOR RF SIGNAL GENERATION 有权
标题翻译：用于RF信号发生的现场可调旋转扭矩振荡器
公开(公告)号：US20120139649A1
公开(公告)日：2012-06-07
申请号：US12928194
申请日：2010-12-06
申请人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
发明人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
IPC分类号： H03B28/00
CPC分类号： H03B15/006
摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.
摘要翻译：公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

3. 发明授权

US08184411B2 MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application 有权
标题翻译： MTJ结合CoFe / Ni多层膜具有MRAM应用的垂直磁各向异性
公开(公告)号：US08184411B2
公开(公告)日：2012-05-22
申请号：US12589614
申请日：2009-10-26
申请人： Kunliang Zhang , Min Li , Pokang Wang , Yuchen Zhou , Cheng T. Horng , Ru-Ying Tong
发明人： Kunliang Zhang , Min Li , Pokang Wang , Yuchen Zhou , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/33
CPC分类号： G11B5/3153 , B82Y40/00 , C23C14/165 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B2005/0024 , H01F10/30 , H01F10/3259 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T156/10 , Y10T428/1107 , Y10T428/1114
摘要： A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)x, (Co/NiFe)x, (Co/NiCo)x, (CoFe/NiFe)x, or (CoFe/NiCo)x composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括由至少Ta制成的薄复合种子层和具有如Ta / Ti / Cu中的fcc（111）或hcp（001）织构的金属层以增强垂直磁各向异性（PMA）在具有（CoFe / Ni）x，（Co / NiFe）x，（Co / NiCo）x，（CoFe / NiFe）x或（CoFe / NiCo）x）组合物的叠层层中，x为5〜在一个实施方案中，CPP-TMR自旋阀具有上述组成的层压自由层和层压参考层之一或两者。 MTJ包括在每个层压结构和隧道势垒之间由CoFeB，CoFeB / CoFe或CoFe / CoFeB制成的界面层。层压层通过低功率和高Ar压力过程沉积，以避免相邻层之间的界面损坏。在220℃至400℃发生退火。具有高PMA的叠层也可以包括在一个或多个自旋转移振荡器层中。

4. 发明申请

US20110096443A1 MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application 有权
标题翻译： MTJ结合CoFe / Ni多层膜具有MRAM应用的垂直磁各向异性
公开(公告)号：US20110096443A1
公开(公告)日：2011-04-28
申请号：US12589614
申请日：2009-10-26
申请人： Kunliang Zhang , Min Li , Pokang Wang , Yuchen Zhou , Cheng T. Horng , Ru-Ying Tong
发明人： Kunliang Zhang , Min Li , Pokang Wang , Yuchen Zhou , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/33 , G11B5/39 , B32B37/00 , C23C14/35
CPC分类号： G11B5/3153 , B82Y40/00 , C23C14/165 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B2005/0024 , H01F10/30 , H01F10/3259 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T156/10 , Y10T428/1107 , Y10T428/1114
摘要： A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)X, (Co/NiFe)X, (Co/NiCo)X, (CoFe/NiFe)X, or (CoFe/NiCo)X composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括由至少Ta制成的薄复合种子层和具有如Ta / Ti / Cu中的fcc（111）或hcp（001）织构的金属层以增强垂直磁各向异性（PMA）在具有（CoFe / Ni）X，（Co / NiFe）X，（Co / NiCo）X，（CoFe / NiFe）X或（CoFe / NiCo）X组合物的叠层中，其中x为5至30 在一个实施方案中，CPP-TMR自旋阀具有上述组成的层压自由层和层压参考层之一或两者。 MTJ包括在每个层压结构和隧道势垒之间由CoFeB，CoFeB / CoFe或CoFe / CoFeB制成的界面层。层压层通过低功率和高Ar压力过程沉积，以避免相邻层之间的界面损坏。在220℃至400℃发生退火。具有高PMA的叠层也可以包括在一个或多个自旋转移振荡器层中。

5. 发明申请

US20090186770A1 Devices using addressable magnetic tunnel junction array to detect magnetic particles 有权
标题翻译：使用可寻址磁隧道结阵列检测磁性颗粒的装置
公开(公告)号：US20090186770A1
公开(公告)日：2009-07-23
申请号：US12009366
申请日：2008-01-18
申请人： Xizeng Shi , Pokang Wang , Hsu Kai Yang
发明人： Xizeng Shi , Pokang Wang , Hsu Kai Yang
IPC分类号： C40B20/08 , C40B60/10
CPC分类号： G01R33/098 , G01R33/1269 , Y10S436/806
摘要： A magnetic sensor for identifying small superparamagnetic particles bonded to a substrate contains a regular orthogonal array of MTJ cells formed beneath that substrate. A magnetic field imposed on the particle, perpendicular to the substrate, induces a magnetic field that has a component within the MTJ cells that is along the plane of the MTJ free layer. If that free layer has a low switching threshold, the induced field of the particle will create resistance changes in a group of MTJ cells that lie beneath it. These resistance changes will be distributed in a characteristic formation or signature that will indicate the presence of the particle. If the particle's field is insufficient to produce the free layer switching, then a biasing field can be added in the direction of the hard axis and the combination of this field and the induced field allows the presence of the particle to be determined.
摘要翻译：用于识别结合到衬底的小超顺磁性颗粒的磁传感器包含在该衬底下面形成的MTJ电池的规则正交阵列。垂直于衬底施加在颗粒上的磁场诱导磁场，该磁场在MTJ单元内具有沿着MTJ自由层的平面的分量。如果自由层具有低切换阈值，则颗粒的感应场将在其下面的一组MTJ细胞中产生电阻变化。这些电阻变化将分布在表征粒子存在的特征形成或特征中。如果粒子的场不足以产生自由层切换，则可以在硬轴的方向上添加偏置场，并且该场与感应场的组合允许确定粒子的存在。

6. 发明申请

US20080180865A1 CPP magnetic recording head with self-stabilizing vortex configuration 有权
标题翻译： CPP磁记录头具有自稳定涡流配置
公开(公告)号：US20080180865A1
公开(公告)日：2008-07-31
申请号：US12079470
申请日：2008-03-27
申请人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
发明人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B2005/3996 , G11C11/16 , Y10T29/49043 , Y10T29/49048 , Y10T29/49053
摘要： A CPP MTJ or GMR read sensor is provided in which the free layer is self-stabilized by a magnetization in a circumferential vortex configuration. This magnetization permits the pinned layer to be magnetized in a direction parallel to the ABS plane, which thereby makes the pinned layer directionally more stable as well. The lack of lateral horizontal bias layers or in-stack biasing allows the formation of closely configured shields, thereby providing protection against side-reading. The vortex magnetization is accomplished by first magnetizing the free layer in a uniform vertical field, then applying a vertical current while the field is still present.
摘要翻译：提供了CPP MTJ或GMR读取传感器，其中自由层通过周向涡流构型中的磁化而自稳定。这种磁化允许钉扎层在平行于ABS平面的方向上被磁化，从而使钉扎层也更方向地更稳定。缺少横向水平偏置层或叠层偏压允许形成紧密配置的屏蔽，从而提供防止侧读的保护。涡流磁化是通过在均匀的垂直场中首先磁化自由层，然后在场仍然存在时施加垂直电流来实现的。

7. 发明授权

US07335961B2 Magnetic random access memory array with coupled soft adjacent magnetic layer 失效
标题翻译：具有耦合的软相邻磁性层的磁性随机存取存储器阵列
公开(公告)号：US07335961B2
公开(公告)日：2008-02-26
申请号：US11210637
申请日：2005-08-25
申请人： Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
发明人： Yimin Guo , Tai Min , Pokang Wang , Xi Zeng Shi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.
摘要翻译：在正交字和位线之间形成MTJ元素。位线是在高导电率层下包括高导电性层和软磁性层的复合线。在操作期间，软磁性层集中了电流的磁场，并且由于其接近于自由层，它与MTJ中的自由层磁耦合。该耦合为自由层磁化提供了热稳定性，并且易于切换，并且可以通过在形成期间通过在自由层中引起形状或晶体各向异性而进一步增强耦合。

8. 发明申请

US20070008656A1 Thermoelectric cooling of CCP-CPP devices 失效
标题翻译： CCP-CPP设备的热电冷却
公开(公告)号：US20070008656A1
公开(公告)日：2007-01-11
申请号：US11175932
申请日：2005-07-06
申请人： Yue Liu , Daniel Abels , Moris Dovek , Min Li , Pokang Wang , Mao-Min Chen
发明人： Yue Liu , Daniel Abels , Moris Dovek , Min Li , Pokang Wang , Mao-Min Chen
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , G11B5/3133 , G11B2005/3996
摘要： The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.
摘要翻译：通过在间隔层的相对侧放置具有不同热电势的材料来克服增加来自CCP-CPP GMR器件而不使其过热的输出信号的问题。来自热接点的热量在基板处被去除，其作为散热器，导致限流电流间隔层的局部局部冷却，使其能够在较高的输入电压增加的可靠性下工作。

9. 发明授权

US06591480B1 Process for fabricating a flux concentrating stitched head 失效
标题翻译：制造焊剂集中缝合头的方法
公开(公告)号：US06591480B1
公开(公告)日：2003-07-15
申请号：US09570235
申请日：2000-05-12
申请人： Mao-Min Chen , Pokang Wang , Cherng-Chyi Han
发明人： Mao-Min Chen , Pokang Wang , Cherng-Chyi Han
IPC分类号： G11B5127
CPC分类号： G11B5/3116 , G11B5/313 , G11B5/3146 , G11B5/3163 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a flux concentrating stitched write head for high data rate applications wherein said flux concentration is achieved by means of a non-magnetic step embedded into a portion of the lower magnetic pole just beneath the write gap layer. The design permits extremely short throat heights, which will be required by future high data rate applications.
摘要翻译：一种制造用于高数据速率应用的通量集中缝合写头的方法，其中所述磁通量集中通过嵌入到写间隙层正下方的下磁极的一部分中的非磁性步骤来实现。该设计允许极短的喉部高度，这将是未来高数据速率应用所需要的。

10. 发明申请

US20100302838A1 Read disturb-free SMT reference cell scheme 审中-公开
标题翻译：读取无干扰SMT参考单元方案
公开(公告)号：US20100302838A1
公开(公告)日：2010-12-02
申请号：US12454925
申请日：2009-05-26
申请人： Pokang Wang , Hsu Kai Yang
发明人： Pokang Wang , Hsu Kai Yang
IPC分类号： G11C11/00 , G11C7/02 , H01L21/00 , G11C11/14
CPC分类号： G11C7/02 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： We describe a reference cell structure for determining data storing cell resistances in an SMT (spin moment transfer) MTJ (magnetic tunneling junction) MRAM array by comparing data cell currents with those of the reference cell. Since the reference cell also utilizes spin moment transfer (SMT) magnetic tunneling junction (MTJ) cells, there would ordinarily be the danger that the act of reading the reference cell could change its magnetization orientations and be a source of error for subsequent comparisons. Therefore the present invention describes a new circuit arrangement for the reference cell that directs read currents through two SMT MTJ cells in opposite directions so that the transfer of spin moments cannot affect the relative magnetization directions of the cells.
摘要翻译：我们描述了通过将数据单元电流与参考单元电流进行比较来确定在SMT（自旋矩转移）MTJ（磁隧道结）MRAM阵列中存储单元电阻的数据的参考单元结构。由于参考单元还利用自旋力矩传递（SMT）磁隧道结（MTJ）单元，因此读取参考单元的行为通常会改变其磁化方向，并作为后续比较的误差源。因此，本发明描述了用于参考单元的新电路装置，其引导读取电流通过两个SMT MTJ单元在相反方向上，使得自旋转矩的转移不会影响单元的相对磁化方向。

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