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1. 发明申请

US20180308645A1 IMPROVED CONTACT IN RF-SWITCH 审中-公开
公开(公告)号：US20180308645A1
公开(公告)日：2018-10-25
申请号：US15771026
申请日：2016-11-14
申请人： CAVENDISH KINETICS, INC.
发明人： Robertus Petrus VAN KAMPEN , James Douglas HUFFMAN , Mickael RENAULT , Shibajyoti Ghosh DASTIDER , Jacques Marcel MUYANGO
IPC分类号： H01H1/00 , B81B3/00 , B81C1/00
CPC分类号： H01H1/0036 , B81B3/0021 , B81B2201/016 , B81C1/00142 , H01H2001/0084
摘要： The present invention generally relates to a mechanism for making a MEMS switch that has a robust RF-contact by avoiding currents to run through a thin sidewall in a via from the RF-contact to the underlying RF-electrode.

2. 发明申请

US20180179048A1 MEMS TRANSDUCER FOR INTERACTING WITH A VOLUME FLOW OF A FLUID AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180179048A1
公开(公告)日：2018-06-28
申请号：US15843332
申请日：2017-12-15
申请人： Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
发明人： Harald SCHENK , Holger CONRAD , Matthieu GAUDET , Klaus SCHIMMANZ , Sergiu LANGA , Bert KAISER
IPC分类号： B81B3/00 , H04R19/00 , B81C1/00
CPC分类号： B81B3/0021 , B81B2201/0257 , B81B2201/036 , B81B2203/0109 , B81B2203/0118 , B81B2203/0127 , B81B2203/0136 , B81B2203/019 , B81B2203/051 , B81C1/00142 , B81C1/0015 , B81C1/00158 , H04R1/023 , H04R1/08 , H04R9/02 , H04R15/00 , H04R17/00 , H04R19/005 , H04R23/002 , H04R2201/003 , H04R2499/11
摘要： A MEMS transducer for interacting with a volume flow of a fluid includes a substrate including a cavity, and an electromechanical transducer connected to the substrate in the cavity and including an element deformable along a lateral movement direction, wherein a deformation of the deformable element along the lateral movement direction and the volume flow of the fluid are causally related.

3. 发明授权

US09857229B1 Fabrication method for micromechanical sensors 有权
公开(公告)号：US09857229B1
公开(公告)日：2018-01-02
申请号：US15188116
申请日：2016-06-21
申请人： MP High Tech Solutions Pty Ltd
发明人： Marek Steffanson
IPC分类号： H01L21/00 , G01J5/10 , B81C1/00
CPC分类号： G01J5/10 , B81C1/00142 , B81C1/0019 , B81C2201/0132 , G01J5/045 , G01J5/0806 , G01J5/40
摘要： A method of fabricating electromagnetic radiation detection devices including: forming a first mask on a substrate; forming a structural layer on the substrate using the first mask; forming a metallic layer overlying the structural layer; removing the first mask; forming a second mask on the substrate, the second mask comprising mask openings; selectively patterning the metallic layer using the mask openings; and removing the second mask.

4. 发明申请

US20160229691A1 METHOD FOR MANUFACTURING THIN-FILM SUPPORT BEAM 有权
标题翻译：制造薄膜支撑梁的方法
公开(公告)号：US20160229691A1
公开(公告)日：2016-08-11
申请号：US15023057
申请日：2014-12-04
申请人： CSMC TECHNOLOGIES FABI CO., LTD.
发明人： Errong JING
IPC分类号： B81C1/00
CPC分类号： B81C1/00142 , B81C2201/0108 , B81C2201/0109 , B81C2201/013
摘要： A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.
摘要翻译：制造薄膜支撑梁的方法包括：提供具有相对的第一和第二表面的基底; 在衬底的第一表面上涂覆牺牲层，并对牺牲层进行构图; 在所述牺牲层上沉积介电膜以形成电介质膜层，并在所述电介质膜层上沉积金属膜以形成金属膜层; 图案化金属膜层，并将金属膜层的图案区域划分成支撑梁部分的金属膜图案和非支撑梁部分的金属膜图案，其中支撑件的金属膜图案的宽度光束部分大于最终支撑光束图案的宽度，并且非支撑光束部分的金属膜图案的宽度等于此时的最终非支撑光束图案的宽度的宽度; 在金属膜层和电介质膜层上进行光蚀刻和蚀刻，以获得最终的支撑束图案，最终的非支撑束图案和最终的电介质膜层，其中最终的电介质膜层用作最终支撑体的支撑膜光束图案和最终的非支撑光束图案; 并去除牺牲层。

5. 发明申请

US20160091713A1 PASSIVATED MICROELECTROMECHANICAL STRUCTURES AND METHODS 有权
标题翻译：经济微电子结构与方法
公开(公告)号：US20160091713A1
公开(公告)日：2016-03-31
申请号：US14502255
申请日：2014-09-30
申请人： PIXTRONIX, INC.
发明人： Teruo Sasagawa
IPC分类号： G02B26/02 , G09G5/10 , B81C1/00
CPC分类号： G02B26/02 , B81B2201/047 , B81C1/00039 , B81C1/00142 , B81C1/0015 , B81C1/00952 , B81C2201/013 , B81C2201/016 , G02B26/0841 , G02B26/0858 , G09G3/3433 , G09G5/10 , G09G2300/04
摘要： This disclosure provides systems, methods and apparatus including devices that include a layer of passivation material covering at least a portion of an exterior surface of a thin film component within a microelectomechanical device. The thin film component may include an electrically conductive layer that connects via an anchor to a conductive surface on a substrate. The disclosure further provides processes for providing a layer of passivation material on an exterior surface of a thin film component and for electrically connecting that thin film component to a conductive surface on a substrate.
摘要翻译：本公开提供了包括装置的系统，方法和装置，其包括覆盖微机电装置内的薄膜部件的外表面的至少一部分的钝化材料层。薄膜部件可以包括通过锚固件连接到基板上的导电表面的导电层。本公开还提供了在薄膜部件的外表面上提供钝化材料层并将该薄膜部件电连接到基板上的导电表面的方法。

6. 发明申请

US20150248007A1 METHOD OF MANUFACTURING MIRROR DEVICE 有权
标题翻译：制造镜像器件的方法
公开(公告)号：US20150248007A1
公开(公告)日：2015-09-03
申请号：US14430078
申请日：2013-09-19
申请人： SUMITOMO PRECISION PRODUCTS CO., LTD.
发明人： Tokiko Misaki
IPC分类号： G02B26/08
CPC分类号： G02B26/0816 , B81B2201/042 , B81C1/00 , B81C1/00142 , G02B26/0858
摘要： A portion of an SiO2 layer 240 on a peripheral portion 255 of an actuator body portion 251 is left on the surface of the actuator body portion 251 when it is etched so as to extend over the outside of the piezoelectric element 4. When the third resist mask 330 covering the actuator body portion 251 and the mirror portion 252 is formed and etching is performed, the third resist mask 330 has a first slit 331 and a second slit 332, the second slit 332 exposing a peripheral portion 256 of a mirror portion 252, and the first slits 331 exposing a peripheral portion 256 of the actuator body portion 251 and a portion of the SiO2 layer 240 on the actuator body portion 251, and having a width wider than the second slit 332.
摘要翻译：致动器主体部分251的周边部分255上的SiO 2层240的一部分在蚀刻时留在致动器主体部分251的表面上，以便在压电元件4的外侧延伸。当第三抗蚀剂形成覆盖致动器主体部分251和镜部分252的掩模330，并且进行蚀刻，第三抗蚀剂掩模330具有第一狭缝331和第二狭缝332，第二狭缝332暴露镜部分252的周边部分256 以及第一狭缝331，其暴露致动器主体部分251的周边部分256和致动器主体部分251上的SiO 2层240的一部分，并且具有比第二狭缝332宽的宽度。

7. 发明授权

US09105841B2 Forming magnetic microelectromechanical inductive components 有权
标题翻译：形成磁性微机电感应元件
公开(公告)号：US09105841B2
公开(公告)日：2015-08-11
申请号：US13796496
申请日：2013-03-12
申请人： International Business Machines Corporation
发明人： William J. Gallagher , Eugene J. O'Sullivan , Naigang Wang
IPC分类号： H01L21/00 , H01L43/14 , B81B3/00 , B81C1/00 , H01F41/04 , H01L49/02
CPC分类号： B81C1/00373 , B81B3/0021 , B81B2201/038 , B81B2203/0118 , B81C1/00142 , B81C1/00706 , B81C2201/0188 , H01F41/046 , H01L28/10 , H01L43/10 , H01L43/12 , H01L43/14
摘要： A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.
摘要翻译：公开了一种微机电装置及其制造方法。在硅衬底上形成牺牲层。在牺牲层的顶表面上形成金属层。将软磁性材料无电沉积在金属层上以制造微机电装置。除去牺牲层以产生与硅衬底分离的金属束。

8. 发明授权

US08729412B2 Nanoelectromechanical logic devices 有权
标题翻译：纳米机电逻辑器件
公开(公告)号：US08729412B2
公开(公告)日：2014-05-20
申请号：US12987804
申请日：2011-01-10
申请人： Massood Tabib-Azar
发明人： Massood Tabib-Azar
IPC分类号： H01H57/00
CPC分类号： B81C1/00142 , H01H1/0094 , H01H1/20 , H01H59/0009 , H01L21/28 , H03K19/02
摘要： Nanoelectromechanical logic devices can include a plurality of flexible bridges having control and logic electrodes. Voltages applied to control electrodes can be used to control flexing of the bridges. The logic electrodes can provide logical functions of the applied voltages.
摘要翻译：纳米机电逻辑器件可以包括具有控制和逻辑电极的多个柔性桥。施加到控制电极的电压可用于控制桥的弯曲。逻辑电极可提供施加电压的逻辑功能。

9. 发明授权

US08710597B1 Method and structure for adding mass with stress isolation to MEMS structures 有权
标题翻译：向MEMS结构增加应力隔离质量的方法和结构
公开(公告)号：US08710597B1
公开(公告)日：2014-04-29
申请号：US13090228
申请日：2011-04-19
申请人： Daniel N. Koury, Jr.
发明人： Daniel N. Koury, Jr.
IPC分类号： H01L29/84
CPC分类号： B81C1/00134 , B81C1/00142 , G01P15/0802 , H01L27/14609 , H01L27/14643 , H01L2924/01013
摘要： A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.
摘要翻译：一种将应力隔离加入MEMS的方法和结构。该结构具有耦合到至少一个柔性元件的硅材料的厚度。根据具体实施例，硅材料的厚度可被配置为围绕柔性元件在一个或多个空间方向上移动。该设备还包括形成在硅材料厚度的相应空间区域中的多个凹陷区域。此外，该设备包括在每个凹陷区域内的胶合材料和形成在每个凹陷区域上的塞子材料。

10. 发明授权

US08229253B2 Electromechanical device configured to minimize stress-related deformation and methods for fabricating same 有权
标题翻译：配置为最小化应力相关变形的机电装置及其制造方法
公开(公告)号：US08229253B2
公开(公告)日：2012-07-24
申请号：US12825214
申请日：2010-06-28
申请人： Fan Zhong , Lior Kogut
发明人： Fan Zhong , Lior Kogut
IPC分类号： G02F1/01
CPC分类号： G02B26/0841 , B81B3/0072 , B81B2201/047 , B81B2203/0163 , B81B2203/019 , B81B2203/0307 , B81B2203/053 , B81C1/00142 , B81C1/00666 , B81C2201/0167 , G02B26/001 , Y10S359/90
摘要： Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.
摘要翻译： MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

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