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    • 1. 发明申请
    • ELECTRON BEAM SWITCH
    • 电子束开关
    • US20120141127A1
    • 2012-06-07
    • US13396384
    • 2012-02-14
    • Thomas C. Hogan
    • Thomas C. Hogan
    • H04J14/00
    • H01J31/60
    • The present invention is directed to an electron beam crossbar switch for interconnection between communication units. The crossbar switch includes an array of electrically charged particle emitter source devices with an input connected to a slow wave structure coupled to the emitter source. An array of detectors is positioned relative to the array of emitter devices for receiving charged particles from various of the emitter devices. X and y deflection means are positioned adjacent each of the emitters for directing the charged particles from each of the emitters to at least one of the detectors to provide more signal output and a reduction in deflection accuracy.
    • 本发明涉及用于在通信单元之间互连的电子束交叉开关。 交叉开关包括具有连接到耦合到发射源的慢波结构的输入的带电粒子发射源源装置的阵列。 检测器阵列相对于发射器装置阵列定位,用于接收来自各种发射器件的带电粒子。 X和Y偏转装置位于每个发射器附近,用于将来自每个发射器的带电粒子引导到至少一个检测器,以提供更多的信号输出和减小偏转精度。
    • 7. 发明授权
    • Memory with self-clocking beam access
    • 带有自拍光束存储器的存储器
    • US3774168A
    • 1973-11-20
    • US3774168D
    • 1970-08-03
    • NCR CO
    • KOO TMCCUNE K
    • G11C13/04H01J29/44H01J31/60H01L27/105G11C5/04G11C7/00G11C11/30
    • G11C13/048H01J29/44H01J31/60H01L27/105
    • There is described a beam accessed metal-oxide semiconductor memory into which binary information can be written and stored and from which that information can be read or erased. The writing, reading, or erasing is accomplished by causing an electron beam of either a high or a low intensity to scan across the gate or drain electrodes of the memory elements while simultaneously applying either a read, a write, or an erase voltage to the gate electrode thereof. There is also described means for controlling the beam position in a self-clocking manner. This is accomplished by providing metal indexing strips along the path which the beam travels and then counting the pulses created in the strips as the beam scans thereacross.
    • 描述了可以写入和存储二进制信息的光束存取的金属氧化物半导体存储器,并且可以从其读取或擦除该信息。 写入,读取或擦除是通过使高电平或低强度的电子束扫描存储元件的栅极或漏极,同时对读取,写入或擦除电压施加到 栅电极。 还描述了以自定时方式控制光束位置的装置。 这是通过沿着光束行进的路径提供金属分度条,然后当光束在其上扫描时计数在条带中产生的脉冲来实现的。