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1. 发明申请

US20180331156A1 INTEGRATED RF FRONTEND STRUCTURES 审中-公开
公开(公告)号：US20180331156A1
公开(公告)日：2018-11-15
申请号：US15777511
申请日：2015-12-21
申请人： INTEL CORPORATION
发明人： HAN WUI THEN , SANSAPTAK DASGUPTA , MARKO RADOSAVLJEVIC
IPC分类号： H01L27/20 , H03H9/17 , H03H9/56 , H01L27/06 , H01L27/092 , H01L29/20 , H01L29/205 , H01L29/778 , H03H3/02 , H01L21/02 , H01L21/306 , H01L21/8258 , H01L41/187 , H01L41/314 , H01L29/66 , H01L21/311
CPC分类号： H01L27/20 , H01L21/0254 , H01L21/30604 , H01L21/31116 , H01L21/76224 , H01L21/8238 , H01L21/8258 , H01L27/0605 , H01L27/0617 , H01L27/0922 , H01L27/0924 , H01L29/0847 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/66795 , H01L29/7786 , H01L29/7787 , H01L41/187 , H01L41/314 , H03H3/02 , H03H9/0542 , H03H9/173 , H03H9/562 , H03H9/564 , H03H2003/021
摘要： Techniques are disclosed for forming a monolithic integrated circuit semiconductor structure that includes a radio frequency (RF) frontend portion and may further include a CMOS portion. The RF frontend portion includes componentry implemented with column III-N semiconductor materials such as gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), and compounds thereof, and the CMOS portion includes CMOS logic componentry implemented with semiconductor materials selected from group IV of the periodic table, such as silicon, germanium, and/or silicon germanium (SiGe). Either of the CMOS or RF frontend portions can be native to the underlying substrate to some degree. The techniques can be used, for example, for system-on-chip integration of III-N transistors and/or RF filters, along with column IV CMOS devices on a single substrate. In a more general sense, the techniques can be used for SoC integration of an RF frontend having diverse III-N componentry on a single substrate, in accordance with some embodiments.

2. 发明授权

US09520855B2 Bulk acoustic wave resonators having doped piezoelectric material and frame elements 有权
标题翻译：具有掺杂压电材料和框架元件的体声波谐振器
公开(公告)号：US09520855B2
公开(公告)日：2016-12-13
申请号：US14190361
申请日：2014-02-26
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Chris Feng , John Choy , Phil Nikkel , Kevin J. Grannen , Tina L. Lamers
IPC分类号： H03H9/17 , H03H9/54 , H03H9/02 , H03H9/13 , H03H9/56
CPC分类号： H03H9/02031 , H03H9/02118 , H03H9/132 , H03H9/172 , H03H9/173 , H03H9/175 , H03H9/562
摘要： A bulk acoustic wave (BAW) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. In an embodiment, the BAW resonator includes a recessed frame element disposed over a surface of at least one of the first and second electrodes. In another embodiment, the BAW resonator includes a raised frame element disposed over a surface of at least one of the first and second electrodes. In yet another embodiment, the BAW resonator includes both the raised and recessed frame elements.
摘要翻译：体声波（BAW）谐振器包括第一电极; 第二电极; 以及设置在第一和第二电极之间的压电层。压电层包括掺杂有至少一种稀土元素的压电材料。在一个实施例中，BAW谐振器包括设置在第一和第二电极中的至少一个的表面上的凹陷框架元件。在另一个实施例中，BAW谐振器包括设置在第一和第二电极中的至少一个的表面上的凸起的框架元件。在另一个实施例中，BAW谐振器包括凸起和凹陷的框架元件。

3. 发明申请

US20150244346A1 BULK ACOUSTIC WAVE RESONATORS HAVING DOPED PIEZOELECTRIC MATERIAL AND FRAME ELEMENTS 有权
标题翻译：具有压电压电材料和框架元件的大容量声波谐波器
公开(公告)号：US20150244346A1
公开(公告)日：2015-08-27
申请号：US14190361
申请日：2014-02-26
申请人： Avago Technologies General IP (Singapore) Pte. Ltd
发明人： Chris Feng , John Choy , Phil Nikkel , Kevin J. Grannen , Tina L. Lamers
IPC分类号： H03H9/54 , H03H9/17
CPC分类号： H03H9/02031 , H03H9/02118 , H03H9/132 , H03H9/172 , H03H9/173 , H03H9/175 , H03H9/562
摘要： A bulk acoustic wave (BAW) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. In an embodiment, the BAW resonator includes a recessed frame element disposed over a surface of at least one of the first and second electrodes. In another embodiment, the BAW resonator includes a raised frame element disposed over a surface of at least one of the first and second electrodes. In yet another embodiment, the BAW resonator includes both the raised and recessed frame elements.
摘要翻译：体声波（BAW）谐振器包括：第一电极; 第二电极; 以及设置在第一电极和第二电极之间的压电层。压电层包括掺杂有至少一种稀土元素的压电材料。在一个实施例中，BAW谐振器包括设置在第一和第二电极中的至少一个的表面上的凹陷框架元件。在另一个实施例中，BAW谐振器包括设置在第一和第二电极中的至少一个的表面上的凸起的框架元件。在又一实施例中，BAW谐振器包括所述凸起和凹陷的框架元件。

4. 发明申请

US20080143457A1 FBAR band pass filter, duplexer having the filter and methods for manufacturing the same 有权
标题翻译： FBAR带通滤波器，具有滤波器的双工器及其制造方法
公开(公告)号：US20080143457A1
公开(公告)日：2008-06-19
申请号：US12007888
申请日：2008-01-16
申请人： Jaemyoung Jhung
发明人： Jaemyoung Jhung
IPC分类号： H01P11/00 , H01L41/22 , H04R17/00
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/542 , H03H9/562 , H03H9/564 , H03H9/706 , Y10T29/42 , Y10T29/43 , Y10T29/49005 , Y10T29/49016 , Y10T29/4902
摘要： A duplexer including an FBAR band pass filter that can be easily embodied in single chip, and a method for manufacturing the same are disclosed. The duplexer of a mobile communication device includes a transmitting band pass filter, formed on an upper portion of a substrate, having at least two FBARs electrically connected to each other, a receiving band pass filter, formed on an other side of the substrate, having at least two FBARs electrically connected to each other, and a page shifter electrically connected with the transmitting band pass filter and the receiving band pass filter. Since the transmitting and receiving band pass filter and the inductor can be integrated into one chip, a duplexer with minimized size can be provided in response to the request of miniaturization and lightness of various mobile communication device. Moreover, since the transmitting or receiving band pass filter according to the present invention can be embodied in a remarkable size in comparison with the conventional SAW band pass filter as well as has a low insertion loss and low power consumption. Thus, an interface design and a terminal operating programming can be easily achieved, and a region of a board with a duplexer is mounted in a mobile communication device can be remarkably reduced.
摘要翻译：公开了一种包括可以容易地体现在单个芯片中的FBAR带通滤波器的双工器及其制造方法。移动通信装置的双工器包括形成在基板的上部的发送带通滤波器，具有彼此电连接的至少两个FBAR，形成在基板的另一侧上的接收带通滤波器，具有至少两个彼此电连接的FBAR，以及与发送带通滤波器和接收带通滤波器电连接的寻呼移位器。由于发送和接收带通滤波器和电感器可以集成到一个芯片中，所以可以响应于各种移动通信设备的小型化和亮度的要求来提供具有最小尺寸的双工器。此外，由于根据本发明的发送或接收带通滤波器可以与传统的SAW带通滤波器相比具有显着的尺寸，并且具有低插入损耗和低功耗。因此，可以容易地实现接口设计和终端操作编程，并且可以显着地减少具有双工器的板的区域安装在移动通信设备中。

5. 发明授权

US07388318B2 Thin film piezoelectric resonator, thin film piezoelectric device, and manufacturing method thereof 有权
标题翻译：薄膜压电谐振器，薄膜压电器件及其制造方法
公开(公告)号：US07388318B2
公开(公告)日：2008-06-17
申请号：US10518704
申请日：2003-06-20
申请人： Tetsuo Yamada , Kosuke Nishimura , Keigo Nagao
发明人： Tetsuo Yamada , Kosuke Nishimura , Keigo Nagao
IPC分类号： H01L41/08
CPC分类号： H03H9/562 , H03H3/02 , H03H9/02094 , H03H9/02102 , H03H9/02157 , H03H9/564 , H03H9/568 , H03H9/585 , H03H9/588
摘要： A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5. The via hole (22) is fabricated by the deep graving type reactive ion etching method.
摘要翻译：一种薄膜压电装置，包括具有通孔（22）的基板（12）和由下电极（15），压电膜（16）和上电极（17）构成的压电层叠结构（14）所述基板（12）经由绝缘层（13）。为通孔（22）形成多个薄膜压电谐振器（210,220）。压电层叠结构（14）包括面对通孔（22）的位置和除了这些之外的支撑区域的隔膜（23）。薄膜压电谐振器（210,220）通过下电极（15）电连接。当穿过薄膜压电谐振器（210,220）的隔膜（23）的中心（1,2）的基板平面中的直线具有穿过支撑区域的段的长度D 1和距离在薄膜压电谐振器（210,220）的膜片的中心之间的距离为D 0，比率D 1 / D 0为0.1至0.5。通孔（22）通过深刻型反应离子蚀刻法制造。

6. 发明授权

US07323953B2 Film bulk acoustic resonator and method of producing the same 有权
标题翻译：薄膜体声共振器及其制造方法
公开(公告)号：US07323953B2
公开(公告)日：2008-01-29
申请号：US10926329
申请日：2004-08-26
申请人： Tsuyoshi Yokoyama , Takeshi Sakashita , Tokihiro Nishihara , Tsutomu Miyashita , Yoshio Satoh
发明人： Tsuyoshi Yokoyama , Takeshi Sakashita , Tokihiro Nishihara , Tsutomu Miyashita , Yoshio Satoh
IPC分类号： H03H9/00
CPC分类号： H03H9/174 , H03H3/02 , H03H9/02133 , H03H9/131 , H03H9/132 , H03H9/562 , H03H9/564 , H03H9/568 , H03H2003/023
摘要： A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.
摘要翻译：膜体声波谐振器包括：形成在基板的主表面上的压电薄膜; 以及布置成夹持压电薄膜的下电极和上电极。在该膜体声波谐振器中，压电薄膜由氮化铝制成，下电极和上电极中的至少一方含有钌或钌合金层。

7. 发明授权

US07196452B2 Film acoustic wave device, manufacturing method and circuit device 失效
标题翻译：薄膜声波装置，制造方法和电路装置
公开(公告)号：US07196452B2
公开(公告)日：2007-03-27
申请号：US09778872
申请日：2001-02-08
申请人： Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Tomonori Kimura , Shumpei Kameyama
发明人： Shusou Wadaka , Koichiro Misu , Tsutomu Nagatsuka , Tomonori Kimura , Shumpei Kameyama
IPC分类号： H01L41/08
CPC分类号： H03H9/564 , H03H3/04 , H03H9/0542 , H03H9/173 , H03H9/174 , H03H9/176 , H03H9/562 , Y10T29/42
摘要： The film acoustic wave devices (12a, 12b and 12c) having the same properties are obtained by changing at least one of the followings: the length and/or the width of upper electrode (18a and 18b); the distance between the upper electrodes (18a and 18b); the length and/or the width of connecting patterns (19a and 19b); areas of bonding pads (20a and 20b); and the pattern shape for the film acoustic wave device (12a and 12b) such as the area of capacitor electrode connected electrically to the bonding pads (20a and 20b); the property variations of film acoustic wave devices (12a, 12b and 12c) caused from the positioning at wafer 11 is compensated.
摘要翻译：具有相同特性的薄膜声波装置（12a，12b和12c）通过改变上述电极（18a和18b）的长度和/或宽度中的至少一个来获得。上部电极（18a和18b）之间的距离; 连接图案（21a和11b）的长度和/或宽度; 接合焊盘（20a和20b）的区域; 以及诸如与接合焊盘（20a和20b）电连接的电容器电极的面积的膜声波器件（12a和12b）的图案形状; 补偿了从晶片11的定位引起的薄膜声波器件（12a，12b和12c）的性能变化。

8. 发明申请

US20050046519A1 Film bulk acoustic resonator and method of producing the same 有权
标题翻译：薄膜体声共振器及其制造方法
公开(公告)号：US20050046519A1
公开(公告)日：2005-03-03
申请号：US10926329
申请日：2004-08-26
申请人： Tsuyoshi Yokoyama , Takeshi Sakashita , Tokihiro Nishihara , Tsutomu Miyashita , Yoshio Satoh
发明人： Tsuyoshi Yokoyama , Takeshi Sakashita , Tokihiro Nishihara , Tsutomu Miyashita , Yoshio Satoh
IPC分类号： H01L41/187 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/319 , H03H3/02 , H03H3/04 , H03H9/13 , H03H9/17 , H03H9/56 , H03H9/58
CPC分类号： H03H9/174 , H03H3/02 , H03H9/02133 , H03H9/131 , H03H9/132 , H03H9/562 , H03H9/564 , H03H9/568 , H03H2003/023
摘要： A film bulk acoustic resonator includes: a piezoelectric thin film that is formed on a principal surface of a substrate; and a lower electrode and an upper electrode that are arranged to sandwich the piezoelectric thin film. In this film bulk acoustic resonator, the piezoelectric thin film is made of aluminum nitride, and at least one of the lower electrode and the upper electrode contains a ruthenium or ruthenium-alloy layer.
摘要翻译：膜体声波谐振器包括：形成在基板的主表面上的压电薄膜; 以及布置成夹持压电薄膜的下电极和上电极。在该膜体声波谐振器中，压电薄膜由氮化铝制成，下电极和上电极中的至少一方含有钌或钌合金层。

9. 发明授权

US06836055B2 Piezoelectric vibrator and filter using the same 失效
标题翻译：压电振动器和滤波器使用相同
公开(公告)号：US06836055B2
公开(公告)日：2004-12-28
申请号：US10344319
申请日：2003-03-18
申请人： Yukinori Sasaki
发明人： Yukinori Sasaki
IPC分类号： H01L4108
CPC分类号： H03H9/177 , H03H9/02157 , H03H9/0509 , H03H9/562 , H03H9/581
摘要： A piezoelectric vibrator uses aluminum nitride as piezoelectric material and thickness sliding vibration as the primary vibration. A polarization direction of the primary vibration is along the longitudinal direction of its vibrating element. This vibrator eliminates undesired resonance, caused by a width of the vibrating element, from a vicinity of a resonance frequency of the primary vibration. Vibrating element 1 has width W and thickness H defined as follows: 2.0≦W/H≦4.0 or 4.3≦W/H≦5.7 or 6.2≦W/H≦7.8 or 8.2≦W/H≦9.8.
摘要翻译：压电振动器使用氮化铝作为压电材料和厚度滑动振动作为主振动。主振动的偏振方向是沿其振动元件的纵向方向。该振动器从主振动的共振频率附近消除由振动元件的宽度引起的不期望的共振。振动元件1的宽度W和厚度H定义如下：2.0 <= W / H <= 4.0或4.3 <= W / H <= 5.7或6.2 <= W / H <= 7.8或8.2 <= W / H＆LE; 9.8。

10. 发明授权

US06822536B1 Longitudinally coupled multi-mode piezoelectric bulk wave filter device, longitudinally coupled multi-mode piezoelectric bulk wave filter, and electronic component 失效
标题翻译：纵向耦合多模压电体波滤波器件，纵向耦合多模压电体波滤波器和电子元器件
公开(公告)号：US06822536B1
公开(公告)日：2004-11-23
申请号：US10438908
申请日：2003-05-16
申请人： Toshio Nishimura , Jiro Inoue
发明人： Toshio Nishimura , Jiro Inoue
IPC分类号： H03H954
CPC分类号： H03H9/581 , H03H9/1014 , H03H9/178 , H03H9/562
摘要： A longitudinally coupled multi-mode piezoelectric bulk wave filter device which is manufactured at low cost, presents a wide bandwidth, results in a large attenuation, and includes first and second piezoelectric bulk wave filters which are mounted on a casing substrate. The first and second piezoelectric bulk wave filters are arranged such that the distance between the ground electrodes of the first and second piezoelectric bulk wave filters is smaller than the distance between input electrodes of the first and second piezoelectric bulk wave filters and the distance between output electrodes of the first and second piezoelectric bulk wave filters. When an input signal is applied between the input electrode and the ground electrode, harmonic waves of different orders are excited and coupled. A filter output is provided between the output electrode and the ground electrode.
摘要翻译：以低成本制造的纵向耦合的多模式压电体波滤波器装置具有宽带宽，导致大的衰减，并且包括安装在壳体基板上的第一和第二压电体波滤波器。第一和第二压电体波滤波器被布置成使得第一和第二压电体波滤波器的接地电极之间的距离小于第一和第二压电体波滤波器的输入电极之间的距离和输出电极之间的距离的第一和第二压电体波滤波器。当在输入电极和接地电极之间施加输入信号时，不同阶次的谐波被激发并耦合。在输出电极和接地电极之间提供滤波器输出。

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