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1. 发明授权

US10020789B2 Switchable filters and design structures 有权
公开(公告)号：US10020789B2
公开(公告)日：2018-07-10
申请号：US14840834
申请日：2015-08-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： James W. Adkisson , Panglijen Candra , Thomas J. Dunbar , Mark D. Jaffe , Anthony K. Stamper , Randy L. Wolf
IPC分类号： H03H9/54 , H03H3/08 , H03H3/007 , H03H9/56 , H03H9/10 , H03H9/24 , G06F17/50 , H03H9/02 , H03H9/64 , H03H3/02 , H03H9/15
CPC分类号： H03H3/007 , G06F17/5063 , H03H3/02 , H03H3/08 , H03H9/02007 , H03H9/02244 , H03H9/02992 , H03H9/1071 , H03H9/2447 , H03H9/2452 , H03H9/2457 , H03H9/2463 , H03H9/54 , H03H9/56 , H03H9/64 , H03H2003/022 , H03H2003/023 , H03H2003/027 , H03H2009/155 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

2. 发明授权

US09997595B2 Semiconductor device, a micro-electro-mechanical resonator and a method for manufacturing a semiconductor device 有权
公开(公告)号：US09997595B2
公开(公告)日：2018-06-12
申请号：US15044446
申请日：2016-02-16
申请人： Infineon Technologies Dresden GmbH
发明人： Thoralf Kautzsch
IPC分类号： H01L21/70 , H01L29/06 , H01L21/762 , H03H3/007 , H03H9/24 , H03H9/02
CPC分类号： H01L29/0649 , H01L21/76202 , H03H3/0072 , H03H3/0073 , H03H9/2452 , H03H2009/02307 , H03H2009/02346 , H03H2009/02496
摘要： A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide.

3. 发明申请

US20180048284A1 RESONATOR 审中-公开
公开(公告)号：US20180048284A1
公开(公告)日：2018-02-15
申请号：US15695505
申请日：2017-09-05
申请人： Murata Manufacturing Co., Ltd.
发明人： Daisuke Nakamura , Toshio Nishimura , Ville Kaajakari
IPC分类号： H03H9/05 , H03H9/13 , H03H9/17
CPC分类号： H03H9/0595 , H03H9/02338 , H03H9/02393 , H03H9/1057 , H03H9/132 , H03H9/17 , H03H9/2452 , H03H2009/155
摘要： A resonator including a vibrating portion with first and second electrodes and a piezoelectric film formed therebetween. Moreover, a frame surrounds the vibrating portion with a pair of holding units opposite to each other and connecting the vibrating portion with the frame. An extended electrode extends from the holder to the holding unit and either the first or second electrode extends to the holding unit, and is connected to the extended electrode. Furthermore, the resonator includes an electrical resistance value per unit area of the extended electrode that is smaller than an electrical resistance value per unit area of the first electrode or the second electrode that extends to the holding unit.

4. 发明申请

US20160233299A1 SEMICONDUCTOR DEVICE, A MICRO-ELECTRO-MECHANICAL RESONATOR AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20160233299A1
公开(公告)日：2016-08-11
申请号：US15044446
申请日：2016-02-16
申请人： Infineon Technologies Dresden GmbH
发明人： Thoralf Kautzsch
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/0649 , H01L21/76202 , H03H3/0072 , H03H3/0073 , H03H9/2452 , H03H2009/02307 , H03H2009/02346 , H03H2009/02496
摘要： A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide.

5. 发明申请

US20160118954A1 COMPOUND SPRING MEMS RESONATORS FOR FREQUENCY AND TIMING GENERATION 有权
标题翻译：用于频率和时序生成的复合弹簧MEMS谐振器
公开(公告)号：US20160118954A1
公开(公告)日：2016-04-28
申请号：US14883435
申请日：2015-10-14
申请人： Micrel, Inc.
发明人： John Ryan Clark
IPC分类号： H03H9/24 , H02N1/00
CPC分类号： H03H9/2405 , H02N1/008 , H03H9/02244 , H03H9/2431 , H03H9/2452 , H03H2009/02251 , H03H2009/02283 , H03H2009/02307 , H03H2009/0233 , H03H2009/02496
摘要： A compound spring MEMS resonator includes a resonator body constructed using one or more spring unit cells forming a compound spring block and one or more compound spring blocks forming the resonator body. Each compound spring block is anchored at nodal points to ensure a high quality factor. The resonator body further includes masses attached to the open ends of the compound spring block and capacitively coupled to drive/sense electrodes. The dimensions of the spring unit cells, the number of spring unit cells for a compound spring block, the size and weight of the masses, and the length and width of the support beams are selected to realize a desired resonant frequency. Meanwhile, the number of compound spring blocks is selected to tune the desired electrical characteristics, such as impedance, of the MEMS resonator.
摘要翻译：复合弹簧MEMS谐振器包括使用形成复合弹簧块的一个或多个弹簧单元构成的谐振器主体和形成谐振器体的一个或多个复合弹簧块。每个复合弹簧块锚定在节点，以确保高品质因素。谐振器体还包括附接到复合弹簧块的开口端的质量，并且电容耦合到驱动/感测电极。选择弹簧单元的尺寸，复合弹簧块的弹簧单元的数量，质量的尺寸和重量以及支撑梁的长度和宽度以实现期望的谐振频率。同时，选择复合弹簧块的数量来调节MEMS谐振器的期望的电特性，例如阻抗。

6. 发明申请

US20160064642A1 VIBRATING DEVICE 有权
标题翻译：振动装置
公开(公告)号：US20160064642A1
公开(公告)日：2016-03-03
申请号：US14939270
申请日：2015-11-12
申请人： Murata Manufacturing Co., Ltd.
发明人： TOSHIO NISHIMURA , Keiichi Umeda , Takashi Hase , Keisuke Takeyama , Takehiko Kishi , Hiroshi Yamada
IPC分类号： H01L41/09 , H01L41/047 , H01L41/083
CPC分类号： H01L41/09 , H01L41/047 , H01L41/083 , H03H9/02448 , H03H9/0595 , H03H9/2452 , H03H2009/155
摘要： A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T2/(T1+T2) is within a range of (−0.0003x2−0.0256x+0.0008)±0.05.
摘要翻译：一种振动装置，其形式为矩形板，具有相对的长边和相对的短边，并且在短边方向上使用伸缩振动模式。振动装置包括由简并半导体制成的Si层，氧化硅层，压电层以及施加电压到压电层的第一和第二电极。当Si层的总厚度由T1表示时，氧化硅层的总厚度由T2表示，当未设置氧化硅层3时的振动装置中的TCF表示为x（ppm / K ），T2 /（T1 + T2）在（-0.0003x2-0.0256x + 0.0008）±0.05的范围内。

7. 发明申请

US20130002363A1 OUT-OF-PLANE RESONATOR 有权
标题翻译：超平面谐振器
公开(公告)号：US20130002363A1
公开(公告)日：2013-01-03
申请号：US13173449
申请日：2011-06-30
申请人： Mehrnaz Motiee , Emmanuel P. Quevy , David H. Bernstein
发明人： Mehrnaz Motiee , Emmanuel P. Quevy , David H. Bernstein
IPC分类号： H03B5/30
CPC分类号： H03H9/2457 , H03H9/2452 , H03H2009/02299 , H03H2009/02511
摘要： A microelectromechanical system (MEMS) device includes a resonator anchored to a substrate. The resonator includes a first strain gradient statically deflecting a released portion of the resonator in an out-of-plane direction with respect to the substrate. The resonator includes a first electrode anchored to the substrate. The first electrode includes a second strain gradient of a released portion of the first electrode. The first electrode is configured to electrostatically drive the resonator in a first mode that varies a relative amount of displacement between the resonator and the first electrode. The resonator may include a resonator anchor anchored to the substrate. The first electrode may include an electrode anchor anchored to the substrate in close proximity to the resonator anchor. The electrode anchor may be positioned relative to the resonator anchor to substantially decouple dynamic displacements of the resonator relative to the electrode from changes to the substrate.
摘要翻译：微机电系统（MEMS）装置包括锚定到基板的谐振器。谐振器包括使第一应变梯度在相对于衬底的平面外方向上静态偏转谐振器的释放部分。谐振器包括锚定到基板的第一电极。第一电极包括第一电极的释放部分的第二应变梯度。第一电极被配置为以改变谐振器和第一电极之间的相对的位移量的第一模式静电驱动谐振器。谐振器可以包括锚定到衬底的谐振器锚。第一电极可以包括锚固到靠近谐振器锚的衬底的电极锚。电极锚定件可以相对于谐振器锚固件定位，以基本上使谐振器相对于电极的动态位移与基板的变化相分离。

8. 发明申请

US20100283353A1 MEMS RESONATORS 有权
标题翻译： MEMS谐振器
公开(公告)号：US20100283353A1
公开(公告)日：2010-11-11
申请号：US12601038
申请日：2008-05-28
申请人： CASPER VAN DER AVOORT
发明人： CASPER VAN DER AVOORT
IPC分类号： H03H9/24
CPC分类号： H03H9/2452 , H03H9/02244 , H03H9/02259 , H03H2009/02488 , H03H2009/02496
摘要： A MEMS piezoresistive resonator (8, 78) is driven at a higher order eigenmode (32) than the fundamental eigenmode (31). The route of flow of a sense current (22) is arranged in relation to a characteristic of the higher order eigenmode (32), for example by being at a point of maximum displacement (50) or at a point of maximum rate of change with respect to distance (x) of displacement of the higher order eigenmode (32). The route of flow of the sense current (22) may be arranged by fabricating the MEMS piezoresistive resonator (8, 78) with a trench (15) formed between two beams (11, 12) of the MEMS piezoresistive resonator (8, 78), the end of the trench being located at the above mentioned position.
摘要翻译： MEMS压阻谐振器（8,78）以比基本本征模式（31）高的本征模式（32）被驱动。感测电流（22）的流动路径相对于高阶本征模式（32）的特性被布置，例如通过位于最大位移（50）的点或最大变化速度的点处，相对于高阶本征模式（32）的位移距离（x）。感测电流（22）的流动路径可以通过用形成在MEMS压阻谐振器（8,78）的两个光束（11,12）之间的沟槽（15）制造MEMS压阻谐振器（8,78）来布置，沟槽的端部位于上述位置。

9. 发明申请

US20080246368A1 Integration of dissimilar materials for advanced multfunctional devices 有权
标题翻译：集成不同材质的高级多功能设备
公开(公告)号：US20080246368A1
公开(公告)日：2008-10-09
申请号：US11607581
申请日：2006-11-30
申请人： Orlando Auciello , John Carlisle , Jennifer Gerbi , James Birrell
发明人： Orlando Auciello , John Carlisle , Jennifer Gerbi , James Birrell
IPC分类号： H01L41/00 , H01L29/04 , H01L21/316
CPC分类号： C23C28/343 , B82Y10/00 , B82Y30/00 , C23C14/024 , C23C14/08 , C23C16/0272 , C23C16/40 , C23C28/321 , C23C28/322 , C23C28/341 , C23C28/345 , C23C28/3455 , C23C28/36 , G01N33/5438 , G01N33/551 , H01L21/0425 , H01L21/3146 , H01L28/60 , H01L41/094 , H03H9/2452
摘要： A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.
摘要翻译：包括具有含氧材料的层状异质结构的装置，具有保护碳层免受氧气蚀刻的碳层和无定形氧扩散阻挡层的装置。金属，碳化物或氧化物中的一种或多种可以与在器件中具有最低的氧化物形成自由能的无定形氧扩散阻挡层接触。各种装置被公开为碳同素异形体的品种。还公开了在诸如器件制造的工艺中从氧蚀刻保护碳如金刚石的方法。

10. 发明申请

US20070096850A1 Method and Apparatus for Frequency Tuning of a Micro-Mechanical Resonator 有权
标题翻译：微机械谐振器频率调谐方法与装置
公开(公告)号：US20070096850A1
公开(公告)日：2007-05-03
申请号：US11550983
申请日：2006-10-19
申请人： Xiangxiang Huang , James MacDonald , Wan-Thai Hsu
发明人： Xiangxiang Huang , James MacDonald , Wan-Thai Hsu
IPC分类号： H03H9/00
CPC分类号： H03H3/0077 , H03H9/02393 , H03H9/1057 , H03H9/2452 , H03H2009/0233 , Y10T29/42
摘要： A method for modifying the resonance frequency of a micro-mechanical resonator, and resonators on which the method is practiced. A packaged resonator is trimmed by directing electromagnetic energy to the resonator through a transparent portion of the package. The removal of mass (by the energy) affects the resonance frequency of the resonator in a predictable manner. In some embodiments, the energy is sourced from a femtosecond laser. In some variations of the illustrative embodiment, the amount of mass to be removed is determined as a function of its location on the resonator. A mass-trimming map is developed that identifies a plurality of potential mass-trimming sites on the resonator. A site can be classified as a fine-tuning site or a coarse-tuning site as a function of the degree to which mass removal at those sites affects the resonance frequency. The sites can also be characterized as a function of their position relative to features of the resonator (e.g., nodal lines, etc.). Based on a differential between the measured and desired resonance frequency of the resonator, and expressions that relate resonance frequency to location-dependent mass, actual sites for mass removal are selected from among of the plurality of potential mass-trimming sites.
摘要翻译：一种用于修改微机械谐振器的谐振频率的方法以及实施该方法的谐振器。通过将电磁能量通过封装的透明部分引导到谐振器来修整封装的谐振器。质量（通过能量）的去除以可预测的方式影响谐振器的谐振频率。在一些实施例中，能量源自飞秒激光。在说明性实施例的一些变型中，要去除的质量的量被确定为其在谐振器上的位置的函数。开发了一种质量修剪图，其识别谐振器上的多个潜在的质量修剪位置。随着这些位置的质量去除程度会影响共振频率，一个站点可以被归类为微调站点或粗调站点。这些位置也可以被表征为它们相对于谐振器的特征（例如节点线等）的位置的函数。基于谐振器的测量和期望谐振频率之间的差异以及将共振频率与位置相关质量相关联的表达式，从多个潜在质量修剪位置中选择用于质量去除的实际位置。

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