专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06162344A Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer 有权
标题翻译：使用可变电流和质量传递电镀半导体晶片以获得均匀的镀层的方法
公开(公告)号：US06162344A
公开(公告)日：2000-12-19
申请号：US393226
申请日：1999-09-09
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
IPC分类号： C25D5/18 , C25D7/12 , C25D5/00
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.
摘要翻译：在电镀半导体晶片上的金属层时，电极端子所在的晶片边缘与晶片的中心之间的电阻电压降使得电镀速率在边缘比在中心处更大。作为这种所谓的“终端效应”的结果，镀层倾向于是凹的。通过首先将电流设置在相对低的电平直到电镀层足够厚以使电阻降可忽略，然后增加电流以提高电镀速率来克服该问题。或者，可以使在较高电流下产生的层的部分略微凸起，以补偿在较低电流下产生的层的部分的凹形。这是通过减少靠近晶片边缘的电镀溶液的质量传递来实现的，即在该区域中电镀过程被传质限制。结果，在这些条件下形成的层的部分在晶片的边缘附近更薄。

2. 发明授权

US5730852A Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells 失效
标题翻译：通过电沉积制备高效太阳能电池的cuxinygazsen（X = 0-2，Y = 0-2，Z = 0-2，N = 0-3）前体膜
公开(公告)号：US5730852A
公开(公告)日：1998-03-24
申请号：US571150
申请日：1995-12-12
申请人： Raghu N. Bhattacharya , Miguel A. Contreras , James Keane , Andrew L. Tennant , John R. Tuttle , Kannan Ramanathan , Rommel Noufi
发明人： Raghu N. Bhattacharya , Miguel A. Contreras , James Keane , Andrew L. Tennant , John R. Tuttle , Kannan Ramanathan , Rommel Noufi
IPC分类号： C25D3/56 , C23C28/02 , C25D5/18 , C25D7/12 , G03C1/22 , H01L21/36 , H01L21/363 , H01L21/365 , H01L31/032 , H01L31/0336 , H01L31/04 , H01L31/18
CPC分类号： H01L31/0749 , C23C28/023 , C25D5/18 , G03C1/22 , H01L21/02422 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , C25D3/56 , Y02E10/541 , Y10S205/915 , Y10S438/93
摘要： High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.
摘要翻译：通过将至少一种组成金属电沉积到玻璃/ Mo基板上，然后物理气相沉积铜和硒或铟和硒，制备可用于生产太阳能电池的铜铟镓二硒化物的高质量薄膜以将薄膜的最终化学计量调整为近似Cu（In，Ga）Se2。使用1-100KHz的交流电压与用于电沉积的直流电压组合可以改善沉积薄膜的形态和生长速率。包含至少部分有机溶剂的电沉积溶液可以与增加的阴极电势结合使用，以增加电沉积薄膜的镓含量。

3. 发明授权

US5286306A Thin film photovoltaic cells from I-III-VI-VII compounds 失效
标题翻译： I-III-VI-VII化合物的薄膜光伏电池
公开(公告)号：US5286306A
公开(公告)日：1994-02-15
申请号：US832420
申请日：1992-02-07
申请人： Shalini Menezes
发明人： Shalini Menezes
IPC分类号： H01L31/032 , H01L31/072 , H01L31/075 , H01L31/18
CPC分类号： H01L31/072 , H01L31/032 , H01L31/0322 , Y02E10/541 , Y10S205/915 , Y10S438/93
摘要： A photovoltaic energy conversion device and methods for forming the same with relatively high efficiency, high stability, low cost, low weight, and low toxicity. The device comprises a thin film n/p or n/i/p type, gradient-doped heterojunction which uses compatible, lattice-matched, non-hazardous semiconducting compounds from the I-III-VI.sub.2 (14), I-III-VI-VII (15) and I-VI.sub.3 -VII (16) series, an ohmic contact (13) to the n-layer comprising a group III metal, a transparent ohmic contact (17) to the p-layer, a grid (18), and an antireflection coating (20).
摘要翻译：一种光伏能量转换装置及其相对高效率，高稳定性，低成本，低重量和低毒性的方法。该器件包括薄膜n / p或n / i / p型，梯度掺杂异质结，其使用I-III-VI2（14），I-III-VI（14）的兼容的，格子匹配的非危险半导体化合物 -VII（15）和I-VI3-VII（16）系列，向n层施加包括III族金属的欧姆接触（13），到p层的透明欧姆接触（17），栅格（18））和抗反射涂层（20）。

4. 发明授权

US4592807A Methods of making highly conductive photoelectrochemical electrodes 失效
标题翻译：制造高导电性光电化学电极的方法
公开(公告)号：US4592807A
公开(公告)日：1986-06-03
申请号：US711354
申请日：1985-03-13
申请人： Jay A. Switzer
发明人： Jay A. Switzer
IPC分类号： C25B11/04 , H01G9/20 , C25D9/04
CPC分类号： H01G9/20 , C25B1/003 , C25B11/0452 , C25B11/0478 , Y02P20/135 , Y10S204/03 , Y10S205/915
摘要： A photoelectrode, containing a highly conductive coating material having a band gap greater than 0 to about 3.0 e.V. on a substrate containing a semiconductor material, is utilized in photovoltaic cells, photoelectrosynthesis and photoelectrocatalysis.
摘要翻译：一种光电极，其包含具有大于0至约3.0eV的带隙的高导电性涂层材料。在含有半导体材料的基板上，用于光伏电池，光电合成和光电催化。

5. 发明授权

US4127449A Liquid-semiconductor junction photocells 失效
标题翻译：液 - 半导体结光电池
公开(公告)号：US4127449A
公开(公告)日：1978-11-28
申请号：US739471
申请日：1976-11-08
申请人： Adam Heller , Barry Miller
发明人： Adam Heller , Barry Miller
IPC分类号： H01G9/20 , H01L31/04 , H01M14/00 , H01M4/04 , H01M6/36
CPC分类号： H01M14/005 , H01G9/20 , Y02E10/542 , Y10S205/915
摘要： Liquid-semiconductor photocells using chalcogenide semiconductors have been advanced recently to the point where they compete favorably with silicon devices for solar power conversion. However, in common with silicon devices, the semiconductor needs to be a single crystal. This fact makes solar power impractically expensive. According to this invention, the chalcogenide semiconductor is made by anodizing cadmium or bismuth in a sulfide, selenide or telluride electrolyte. The anodized element, when operated photovoltaically in an electrolyte similar to the anodizing solution, produces useful power conversion and is relatively inexpensive.
摘要翻译：使用硫属元素半导体的液体半导体光电池最近已经被推进到与太阳能转换的硅器件相竞争的地步。然而，与硅器件相同，半导体需要是单晶。这个事实使得太阳能发电成本不高。根据本发明，通过在硫化物，硒化物或碲化物电解质中阳极氧化镉或铋来制备硫族化物半导体。阳极氧化元件在与阳极氧化溶液类似的电解质中光伏发电时产生有用的功率转换并且相对便宜。

6. 发明授权

US06228243B1 Electrochemical synthesis of crystalline compound or alloy films 失效
标题翻译：结晶化合物或合金膜的电化学合成
公开(公告)号：US06228243B1
公开(公告)日：2001-05-08
申请号：US09246676
申请日：1999-02-08
申请人： Shalini Menezes
发明人： Shalini Menezes
IPC分类号： C25D510
CPC分类号： C30B7/12 , C25D9/00 , C25D21/12 , C30B7/00 , C30B7/005 , C30B29/46 , C30B29/48 , Y10S205/915
摘要： A new method to synthesize crystalline films, superlattices and multilayered devices based on metallic or semiconductor compounds or alloys in electrolyte media on non-crystalline substrates. An automated sequence of flow, equilibration and underpotential electrodeposition from a single electrolyte comprising the film constituents leads to the synthesis of stoichiometric, epitaxial layers. The invention process is based on a new concept of electrochemical molecular layer epitaxy; it provides a relatively simple, fast and inexpensive method to fabricate a wide range of high quality technological materials, ranging from large-area single phase films to multiple quantum-well structures.
摘要翻译：一种基于金属或半导体化合物或合金在非结晶基质上的电解质介质中合成晶体膜，超晶格和多层器件的新方法。由包含膜组分的单一电解质的自动顺序的流动，平衡和欠电位电沉积导致化学计量的外延层的合成。本发明方法基于电化学分子层外延的新概念; 它提供了一种相对简单，快速和便宜的方法来制造广泛的高质量技术材料，从大面积单相膜到多个量子阱结构。

7. 发明授权

US6074544A Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer 无效
公开(公告)号：US6074544A
公开(公告)日：2000-06-13
申请号：US121174
申请日：1998-07-22
申请人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
发明人： Jonathan D. Reid , Robert J. Contolini , Edward C. Opocensky , Evan E. Patton , Eliot K. Broadbent
IPC分类号： C25D5/18 , C25D7/12 , C25D5/54 , C25D11/32
CPC分类号： C25D5/18 , C25D7/123 , Y10S205/915
摘要： In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", the plated layer tends to be concave. This problem is overcome by first setting the current at a relatively low level until the plated layer is sufficiently thick that the resistive drop is negligible, and then increasing the current to improve the plating rate. Alternatively, the portion of the layer produced at the higher current can be made slightly convex to compensate for the concave shape of the portion of the layer produced at the lower current. This is done by reducing the mass transfer of the electroplating solution near the edge of the wafer to the point that the electroplating process is mass transfer limited in that region. As a result, the portion of the layer formed under these conditions is thinner near the edge of the wafer.

8. 发明授权

US5478445A Electrochemical process 失效
标题翻译：电化学工艺
公开(公告)号：US5478445A
公开(公告)日：1995-12-26
申请号：US211775
申请日：1994-07-11
申请人： Jeremy Barker , Rodney J. Marshall , Mehran Sadeghi
发明人： Jeremy Barker , Rodney J. Marshall , Mehran Sadeghi
IPC分类号： C25D9/08 , C25D17/00 , H01L21/208 , H01L21/368 , H01L31/04 , H01L31/18 , C25C1/22
CPC分类号： H01L21/02562 , H01L21/02422 , H01L21/02474 , H01L21/02628 , H01L31/1828 , Y02E10/543 , Y10S205/915
摘要： Improved electrolytic deposition of semiconductors is obtained by separating the anode from the cathode by an ion-exchange membrane. The process is useful in the deposition of IIB/VIB semiconductors in the fabrication of photovoltaic cells.
摘要翻译： PCT No.PCT / GB90 / 01888 Sec。 371日期：1994年7月11日 102（e）日期1994年7月11日PCT 1991年10月15日提交PCT公布。出版物WO93 / 08594 日期：1993年4月29日。通过离子交换膜将阳极与阴极分离来获得半导体的电解沉积。该方法在用于制造光伏电池中的IIB / VIB半导体的沉积中是有用的。

9. 发明授权

US4879270A Method of forming superconducting ceramics by electrodeposition 失效
标题翻译：通过电沉积形成超导陶瓷的方法
公开(公告)号：US4879270A
公开(公告)日：1989-11-07
申请号：US188772
申请日：1988-04-29
申请人： MacRae Maxfield , Ray H. Baughman , Zafar Igbal , Helmut Eckhardt
发明人： MacRae Maxfield , Ray H. Baughman , Zafar Igbal , Helmut Eckhardt
IPC分类号： C04B35/45 , C04B35/65 , H01L39/24
CPC分类号： H01L39/2451 , C04B35/45 , C04B35/65 , H01L39/2464 , Y10S205/915 , Y10S505/815 , Y10S505/818 , Y10S505/821
摘要： The invention relates to an improvement in a method of forming deposits of superconducting ceramics. Generally, such ceramics are formed by electrodepositing a mixture of metals of the type, and in proportions sufficient to be oxidized into ceramic, onto a substrate. The electrodeposited mixture is then oxidized under conditions sufficient to result in a super conducting ceramic deposit. The improvement resides in conducting the electrodeposition in a manner which results in a patterned electrodeposition prior to conducting oxidation.
摘要翻译：本发明涉及一种形成超导陶瓷沉积物的方法的改进。通常，这种陶瓷通过将一种类型的金属和足以氧化成陶瓷的比例的混合物电沉积到基底上而形成。然后将电沉积的混合物在足以导致超导陶瓷沉积物的条件下被氧化。改进之处在于在进行氧化之前以导致图案化电沉积的方式进行电沉积。

10. 发明授权

US4192720A Electrodeposition process for forming amorphous silicon 失效
标题翻译：用于形成非晶硅的电沉积工艺
公开(公告)号：US4192720A
公开(公告)日：1980-03-11
申请号：US951580
申请日：1978-10-16
申请人： Edward R. Bucker , James A. Amick
发明人： Edward R. Bucker , James A. Amick
IPC分类号： C25D13/02 , C25D5/50 , C25D9/08 , H01G9/00 , H01G9/20 , H01L31/04 , H01L31/20 , C25D3/02
CPC分类号： H01L31/202 , C25D5/50 , C25D9/08 , Y02E10/50 , Y02P70/521 , Y10S205/915
摘要： A method for electroplating amorphous silicon from a non-aqueous solution containing a silicon solute wherein a heat treatment is requisite to producing stable coatings of photoconductive amorphous silicon.
摘要翻译：从含有硅溶质的非水溶液中电镀非晶硅的方法，其中热处理是制备光导非晶硅稳定涂层所必需的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式