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1. 发明授权

US09398733B2 Electromagnetic shielding composite 有权
标题翻译：电磁屏蔽复合材料
公开(公告)号：US09398733B2
公开(公告)日：2016-07-19
申请号：US13461006
申请日：2012-05-01
申请人： Cheng-Hsien Lin , Yao-Wen Bai , Wen-Chin Lee , Rui Zhang , Kai-Li Jiang , Chen Feng
发明人： Cheng-Hsien Lin , Yao-Wen Bai , Wen-Chin Lee , Rui Zhang , Kai-Li Jiang , Chen Feng
IPC分类号： H05K9/00 , B29C70/88 , B29K105/16
CPC分类号： H05K9/009 , B29C70/882 , B29C70/885 , B29K2105/167 , C08L2666/76 , H05K9/0083 , H05K9/0088 , Y10S977/784 , Y10S977/789 , Y10T428/24132 , Y10T428/249979
摘要： An electromagnetic shielding composite includes a polymer and a carbon nanotube film structure. The carbon nanotube structure includes a number of carbon nanotubes disposed in the polymer. The number of carbon nanotubes are parallel with each other.
摘要翻译：电磁屏蔽复合材料包括聚合物和碳纳米管薄膜结构。碳纳米管结构包括设置在聚合物中的多个碳纳米管。碳纳米管的数量彼此平行。

2. 发明授权

US09196790B2 Method for making epitaxial structure 有权
标题翻译：制造外延结构的方法
公开(公告)号：US09196790B2
公开(公告)日：2015-11-24
申请号：US13276280
申请日：2011-10-18
申请人： Yang Wei , Shou-Shan Fan
发明人： Yang Wei , Shou-Shan Fan
IPC分类号： C30B21/02 , H01L33/12 , B82Y30/00 , B82Y40/00 , C30B25/02 , C30B25/18 , C30B29/40 , H01L29/06 , H01L33/00
CPC分类号： H01L33/12 , B82Y30/00 , B82Y40/00 , C01B21/0632 , C01B32/168 , C30B25/02 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02422 , H01L21/02444 , H01L21/0245 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L21/67109 , H01L29/0673 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L51/0048 , H01L2924/0002 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/752 , Y10S977/755 , Y10S977/788 , Y10S977/789 , Y10S977/847 , Y10S977/887 , Y10S977/932 , Y10T428/24331 , H01L2924/00
摘要： A method for making an epitaxial structure is provided. The method includes following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. An epitaxial layer is epitaxially grown on the buffer layer. The substrate is removed.
摘要翻译：提供了制造外延结构的方法。该方法包括以下步骤。提供了具有外延生长面的基板。在外延生长表面上形成缓冲层。碳纳米管层放置在缓冲层上。在缓冲层上外延生长外延层。去除衬底。

3. 发明授权

US09024310B2 Epitaxial structure 有权
标题翻译：外延结构
公开(公告)号：US09024310B2
公开(公告)日：2015-05-05
申请号：US13273252
申请日：2011-10-14
申请人： Yang Wei , Chen Feng , Shou-Shan Fan
发明人： Yang Wei , Chen Feng , Shou-Shan Fan
IPC分类号： H01L29/10 , H01L33/12 , B82Y30/00 , B82Y40/00 , C30B25/02 , C30B25/18 , C30B29/40 , H01L29/06 , H01L33/00
CPC分类号： H01L33/12 , B82Y30/00 , B82Y40/00 , C01B21/0632 , C01B32/168 , C30B25/02 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02422 , H01L21/02444 , H01L21/0245 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L21/67109 , H01L29/0673 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L51/0048 , H01L2924/0002 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/752 , Y10S977/755 , Y10S977/788 , Y10S977/789 , Y10S977/847 , Y10S977/887 , Y10S977/932 , Y10T428/24331 , H01L2924/00
摘要： An epitaxial structure is provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween.
摘要翻译：提供外延结构。外延结构包括衬底，外延层和碳纳米管层。外延层位于衬底上。碳纳米管层位于衬底和外延层之间。碳纳米管层可以是从碳纳米管阵列引出的碳纳米管膜，并且包括多个连续取向的碳纳米管，其间以范德华力的吸引力端对端地连接。

4. 发明授权

US08771957B2 Sequencing using a predetermined coverage amount of polynucleotide fragments 有权
标题翻译：使用预定覆盖量的多核苷酸片段进行测序
公开(公告)号：US08771957B2
公开(公告)日：2014-07-08
申请号：US13975215
申请日：2013-08-23
申请人： Callida Genomics, Inc.
发明人： Radoje Drmanac
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6874 , C07H21/04 , C07K1/047 , C12Q1/6806 , C12Q1/682 , C12Q1/6837 , C12Q1/6869 , C12Q2525/151 , C12Q2525/313 , C12Q2531/125 , C12Q2565/513 , G01N15/1404 , G01N15/1434 , Y10S977/778 , Y10S977/789 , Y10S977/792 , Y10S977/88 , Y10S977/882 , C12Q2521/307 , C12Q2525/161 , C12Q2535/122 , C12Q2563/179 , C12Q2565/514
摘要： The invention provides methods and kits for ordering sequence information derived from one or more target polynucleotides. In one aspect, one or more tiers or levels of fragmentation and aliquoting are generated, after which sequence information is obtained from fragments in a final level or tier. Each fragment in such final tier is from a particular aliquot, which, in turn, is from a particular aliquot of a prior tier, and so on. For every fragment of an aliquot in the final tier, the aliquots from which it was derived at every prior tier is known, or can be discerned. Thus, identical sequences from overlapping fragments from different aliquots can be distinguished and grouped as being derived from the same or different fragments from prior tiers. When the fragments in the final tier are sequenced, overlapping sequence regions of fragments in different aliquots are used to register the fragments so that non-overlapping regions are ordered. In one aspect, this process is carried out in a hierarchical fashion until the one or more target polynucleotides are characterized, e.g. by their nucleic acid sequences, or by an ordering of sequence segments, or by an ordering of single nucleotide polymorphisms (SNPs), or the like.
摘要翻译：本发明提供了用于排序从一个或多个目标多核苷酸衍生的序列信息的方法和试剂盒。在一个方面，产生一个或多个分层或等级的碎片和等分试样，之后从最终级别或层级的片段获得序列信息。这样的最后一层中的每个片段都来自特定的等分试样，而这些等分试样又是来自先前层的特定等分试样，等等。对于最后一层中的等分试样的每个片段，从每个先前的层次派生的等分试样是已知的，或者可以被辨别出来。因此，来自不同等分试样的重叠片段的相同序列可以被区分并分组为从与先前层相同或不同的片段衍生的。当最终层中的片段被排序时，使用不同等分试样的片段的重叠序列区域来登记片段，使得非重叠区域被排序。在一个方面，该方法以分级方式进行，直到一个或多个目标多核苷酸被表征为例如。通过其核酸序列，或通过序列片段的排序，或通过单核苷酸多态性（SNP）等的排序。

5. 发明申请

US20140154165A1 METHOD FOR PREPARING GRAPHENE BY USING TWO-DIMENSIONAL CONFINED SPACE BETWEEN THE LAYERS OF INORGANIC LAYERED MATERIALS 有权
标题翻译：通过在无机层材料层之间使用两维限定空间来制备石墨的方法
公开(公告)号：US20140154165A1
公开(公告)日：2014-06-05
申请号：US13980715
申请日：2012-03-27
申请人： Wensheng Yang , Jie Sun , Haimei Liu , Xu Chen , Xue Duan
发明人： Wensheng Yang , Jie Sun , Haimei Liu , Xu Chen , Xue Duan
IPC分类号： C01B31/04
CPC分类号： C01B31/0446 , C01B32/192 , C01B32/22 , Y10S977/789
摘要： The present invention relates to a method for preparing graphene using the two-dimensional confined space between the layers of inorganic layered materials. Such method comprises the following steps: mix a soluble salt of a divalent metal ion M2+, a soluble salt of a trivalent metal ion M′3+, a soluble salt of a chain alkyl anion A− and a carbon source molecule C and dissolve them in deionized and CO2-eliminated water to prepare a mixed salt solution; mix the mixed salt solution with an alkali solution under nitrogen protection and subject them to reaction and crystallization under nitrogen, and filter the suspension obtained thereafter and wash the filter cake with deionized water until the pH of the filtrate is 7 to 7.5, and then dry the filter cake to obtain layered double hydroxides with an intercalated structure; under an inert atmosphere or a reducing atmosphere, calcinate the layered double hydroxides with an intercalated structure to provide a calcinated product; add the calcinated product into a hydrochloric acid solution for ultrasonic treatment, and separate the solution by centrifugation and wash the precipitate obtained by centrifugation with deionized water until the pH of the filtrate is 6.5 to 7 to obtain the graphene.
摘要翻译：本发明涉及使用无机层状材料层之间的二维密闭空间来制备石墨烯的方法。该方法包括以下步骤：将二价金属离子M2 +的可溶性盐，三价金属离子M'3 +的可溶性盐，链烷基阴离子A的可溶性盐和碳源分子C混合并溶解在去离子水和二氧化碳消除的水中制备混合盐溶液; 在氮气保护下将混合盐溶液与碱溶液混合，并在氮气下进行反应和结晶，过滤后得到的悬浮液，用去离子水洗涤滤饼直到滤液的pH为7至7.5，然后干燥滤饼得到具有插层结构的层状双氢氧化物; 在惰性气氛或还原气氛下，以层间结构煅烧层状双氢氧化物，得到煅烧产物; 将煅烧后的产物加入到盐酸溶液中进行超声波处理，离心分离溶液，用去离子水离心洗涤沉淀，直到滤液的pH值达到6.5〜7，得到石墨烯。

6. 发明授权

US08673562B2 Using non-overlapping fragments for nucleic acid sequencing 有权
标题翻译：使用非重叠片段进行核酸测序
公开(公告)号：US08673562B2
公开(公告)日：2014-03-18
申请号：US13954778
申请日：2013-07-30
申请人： Callida Genomics, Inc.
发明人： Radoje Drmanac
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6874 , C07H21/04 , C07K1/047 , C12Q1/6806 , C12Q1/682 , C12Q1/6837 , C12Q1/6869 , C12Q2525/151 , C12Q2525/313 , C12Q2531/125 , C12Q2565/513 , G01N15/1404 , G01N15/1434 , Y10S977/778 , Y10S977/789 , Y10S977/792 , Y10S977/88 , Y10S977/882 , C12Q2521/307 , C12Q2525/161 , C12Q2535/122 , C12Q2563/179 , C12Q2565/514
摘要： The invention provides methods and kits for ordering sequence information derived from one or more target polynucleotides. In one aspect, one or more tiers or levels of fragmentation and aliquoting are generated, after which sequence information is obtained from fragments in a final level or tier. Each fragment in such final tier is from a particular aliquot, which, in turn, is from a particular aliquot of a prior tier, and so on. For every fragment of an aliquot in the final tier, the aliquots from which it was derived at every prior tier is known, or can be discerned. Thus, identical sequences from overlapping fragments from different aliquots can be distinguished and grouped as being derived from the same or different fragments from prior tiers. When the fragments in the final tier are sequenced, overlapping sequence regions of fragments in different aliquots are used to register the fragments so that non-overlapping regions are ordered. In one aspect, this process is carried out in a hierarchical fashion until the one or more target polynucleotides are characterized, e.g. by their nucleic acid sequences, or by an ordering of sequence segments, or by an ordering of single nucleotide polymorphisms (SNPs), or the like.
摘要翻译：本发明提供了用于排序从一个或多个目标多核苷酸衍生的序列信息的方法和试剂盒。在一个方面，产生一个或多个分层或等级的碎片和等分试样，之后从最终级别或层级的片段获得序列信息。这样的最后一层中的每个片段都来自特定的等分试样，而这些等分试样又是来自先前层的特定等分试样，等等。对于最后一层中的等分试样的每个片段，从每个先前的层次派生的等分试样是已知的，或者可以被辨别出来。因此，来自不同等分试样的重叠片段的相同序列可以被区分并分组为从与先前层相同或不同的片段衍生的。当最终层中的片段被排序时，使用不同等分试样的片段的重叠序列区域来登记片段，使得非重叠区域被排序。在一个方面，该方法以分级方式进行，直到一个或多个目标多核苷酸被表征为例如。通过其核酸序列，或通过序列片段的排序，或通过单核苷酸多态性（SNP）等的排序。

7. 发明授权

US08536015B2 Memory cell that includes a carbon-based memory element and methods of forming the same 有权
标题翻译：包含碳基记忆元件的记忆单元及其形成方法
公开(公告)号：US08536015B2
公开(公告)日：2013-09-17
申请号：US13351468
申请日：2012-01-17
申请人： Roy E. Scheuerlein , Alper Ilkbahar , April D. Schricker
发明人： Roy E. Scheuerlein , Alper Ilkbahar , April D. Schricker
IPC分类号： H01L21/00 , H01L21/06 , H01L29/02 , G11C11/00
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/0002 , G11C13/0009 , G11C13/025 , G11C2213/35 , G11C2213/71 , G11C2213/72 , H01L27/1021 , H01L27/285 , H01L51/0048 , Y10S977/712 , Y10S977/72 , Y10S977/721 , Y10S977/723 , Y10S977/734 , Y10S977/788 , Y10S977/789 , Y10S977/79 , Y10S977/855 , Y10S977/943
摘要： In accordance with aspects of the invention, a method of forming a metal-insulator-metal stack is provided. The method includes forming a first conducting layer, forming a resistivity-switching carbon-based material above the first conducting layer, and forming a second conducting layer above the carbon-based material, wherein the carbon-based material has a thickness of not more than ten atomic layers. Other aspects are also described.
摘要翻译：根据本发明的方面，提供了形成金属 - 绝缘体 - 金属叠层的方法。该方法包括形成第一导电层，在第一导电层上形成电阻率切换碳基材料，并在碳基材料上形成第二导电层，其中碳基材料的厚度不大于十个原子层。还描述了其他方面。

8. 发明申请

US20120178243A1 METHOD FOR MAKING SEMICONDUCTOR EPITAXIAL STRUCTURE 有权
标题翻译：制造半导体外延结构的方法
公开(公告)号：US20120178243A1
公开(公告)日：2012-07-12
申请号：US13276265
申请日：2011-10-18
申请人： Yang WEI , Shou-Shan FAN
发明人： Yang WEI , Shou-Shan FAN
IPC分类号： H01L21/20
CPC分类号： H01L33/12 , B82Y30/00 , B82Y40/00 , C01B21/0632 , C01B32/168 , C30B25/02 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02422 , H01L21/02444 , H01L21/0245 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L21/67109 , H01L29/0673 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L51/0048 , H01L2924/0002 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/752 , Y10S977/755 , Y10S977/788 , Y10S977/789 , Y10S977/847 , Y10S977/887 , Y10S977/932 , Y10T428/24331 , H01L2924/00
摘要： A method for making a semiconductor epitaxial structure is provided. The method includes growing a substrate having an epitaxial growth surface, placing a carbon nanotube layer on the epitaxial growth surface, epitaxially growing a doped semiconductor epitaxial layer on the epitaxial growth surface. The carbon nanotube layer can be suspended above the epitaxial growth surface.
摘要翻译：提供一种制造半导体外延结构的方法。该方法包括生长具有外延生长表面的衬底，在外延生长表面上放置碳纳米管层，在外延生长表面上外延生长掺杂半导体外延层。碳纳米管层可以悬浮在外延生长表面上方。

9. 发明申请

US20120174858A1 BASE AND METHOD FOR MAKING EPITAXIAL STRUCTURE USING THE SAME 有权
标题翻译：使用该方法制造外形结构的基础和方法
公开(公告)号：US20120174858A1
公开(公告)日：2012-07-12
申请号：US13276251
申请日：2011-10-18
申请人： YANG WEI , CHEN FENG , SHOU-SHAN FAN
发明人： YANG WEI , CHEN FENG , SHOU-SHAN FAN
IPC分类号： C30B25/04 , B32B3/10 , B82Y30/00
CPC分类号： H01L33/12 , B82Y30/00 , B82Y40/00 , C01B21/0632 , C01B32/168 , C30B25/02 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02422 , H01L21/02444 , H01L21/0245 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L21/67109 , H01L29/0673 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L51/0048 , H01L2924/0002 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/752 , Y10S977/755 , Y10S977/788 , Y10S977/789 , Y10S977/847 , Y10S977/887 , Y10S977/932 , Y10T428/24331 , H01L2924/00
摘要： A base for making an epitaxial structure is provided. The base includes a substrate and a carbon nanotube layer. The substrate has an epitaxial growth surface. The carbon nanotube layer is located on the epitaxial growth surface. The carbon nanotube layer defines a plurality of apertures to expose part of the epitaxial growth surface so that an epitaxial layer can grow from an exposed epitaxial growth surface and through the apertures. A method for making an epitaxial structure using the base is also provided.
摘要翻译：提供了制造外延结构的基底。基底包括基底和碳纳米管层。衬底具有外延生长表面。碳纳米管层位于外延生长表面上。碳纳米管层限定多个孔以暴露外延生长表面的一部分，使得外延层可以从暴露的外延生长表面并通过孔生长。还提供了使用该基底制造外延结构的方法。

10. 发明申请

US20120174856A1 METHOD FOR MAKING EPITAXIAL STRUCTURE 有权
标题翻译：制造外形结构的方法
公开(公告)号：US20120174856A1
公开(公告)日：2012-07-12
申请号：US13276283
申请日：2011-10-18
申请人： YANG WEI , SHOU-SHAN FAN
发明人： YANG WEI , SHOU-SHAN FAN
IPC分类号： C30B19/00 , C30B23/02 , C30B25/02 , B82Y99/00 , B82Y30/00
CPC分类号： H01L33/12 , B82Y30/00 , B82Y40/00 , C01B21/0632 , C01B32/168 , C30B25/02 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02422 , H01L21/02444 , H01L21/0245 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L21/67109 , H01L29/0673 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L51/0048 , H01L2924/0002 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/752 , Y10S977/755 , Y10S977/788 , Y10S977/789 , Y10S977/847 , Y10S977/887 , Y10S977/932 , Y10T428/24331 , H01L2924/00
摘要： A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A carbon nanotube layer is placed on the epitaxial growth surface. An epitaxial layer is epitaxially grown on the epitaxial growth surface. The carbon nanotube layer is removed. The carbon nanotube layer can be removed by heating.
摘要翻译：提供了制造外延结构的方法。该方法包括以下步骤。提供基板。衬底具有用于生长外延层的外延生长表面。将碳纳米管层置于外延生长表面上。外延生长表面外延生长外延层。去除碳纳米管层。可以通过加热除去碳纳米管层。

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