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1. 发明授权

US11020955B2 Control of solidification in laser powder bed fusion additive manufacturing using a diode laser fiber array 有权
公开(公告)号：US11020955B2
公开(公告)日：2021-06-01
申请号：US16704831
申请日：2019-12-05
申请人： General Electric Company
发明人： William Thomas Carter , Marshall Gordon Jones , Lang Yuan , Ning Zhou , Steven Jude Duclos
IPC分类号： B33Y80/00 , B23K26/00 , B23P6/00 , B33Y10/00 , B29C73/34 , B33Y30/00 , B23K26/06 , B29C73/00 , B23K26/073 , B23K26/34 , B22F5/00 , B28B1/00 , F01D5/00 , B22F5/04 , C30B11/00 , C30B13/06 , C30B29/52 , C30B13/30 , C30B13/24 , C30B13/32 , B29C64/153 , G02B6/42 , B22F12/00 , B29L31/08 , B29K105/00 , B23K101/00 , B23K103/18 , B22F10/10
摘要： A method of method of forming or repairing a superalloy article having a columnar or equiaxed or directionally solidified or amorphous or single crystal microstructure includes emitting a plurality of laser beams from selected fibers of a diode laser fiber array corresponding to a pattern of a layer of the article onto a powder bed of the superalloy to form a melt pool; and controlling a temperature gradient and a solidification velocity of the melt pool to form the columnar or single crystal microstructure.

2. 发明申请

US20190352795A1 METHOD AND APPARATUS FOR PULLING A SINGLE CRYSTAL BY THE FZ METHOD 审中-公开
公开(公告)号：US20190352795A1
公开(公告)日：2019-11-21
申请号：US16474875
申请日：2018-02-13
申请人： SILTRONIC AG
发明人： Thomas SCHROECK
IPC分类号： C30B13/30 , C30B13/32 , C30B13/24 , C30B29/06
摘要： FZ single crystals are pulled by melting a polycrystal with electromagnetic melting apparatus and then recrystallizing. First, a lower end of the polycrystal is melted; second, a monocrystalline seed is attached to the lower end of the polycrystal and melted beginning from an upper end thereof; third, between a lower section of the seed and the polycrystal, a thin neck is formed whose diameter (dD) is smaller than that (dI) of the seed; and fourth, between the thin neck section and the polycrystal, a conical section is formed. Before the conical growth, a switchover position (h′) of the polycrystal, the position at which the rate of polycrystal movement relative to the melting apparatus is to be reduced is determined, and the rate is reduced, in amount when the switchover position (h′) is reached.

3. 发明授权

US09970124B2 Single crystal production apparatus and single crystal production method 有权
公开(公告)号：US09970124B2
公开(公告)日：2018-05-15
申请号：US15107095
申请日：2015-03-13
申请人： Shin Akutsu
发明人： Shin Akutsu
IPC分类号： C30B13/16 , C30B13/24 , C30B13/22 , C30B13/32 , C30B29/66 , C30B13/28
CPC分类号： C30B13/24 , C30B13/16 , C30B13/22 , C30B13/285 , C30B13/32 , C30B29/66
摘要： A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

4. 发明申请

US20170145586A1 SYSTEM AND METHOD FOR SINGLE CRYSTAL GROWTH WITH ADDITIVE MANUFACTURING 审中-公开
公开(公告)号：US20170145586A1
公开(公告)日：2017-05-25
申请号：US14949298
申请日：2015-11-23
申请人： Hobart Brothers Company
发明人： Zhigang Xiao
IPC分类号： C30B13/24 , C30B13/16 , C30B13/32 , B33Y70/00 , C30B29/52 , C30B29/68 , B33Y10/00 , B33Y30/00 , C30B13/06 , C30B19/08
CPC分类号： C30B13/24 , B22F3/1028 , B22F3/1055 , B22F2003/1056 , B22F2999/00 , B23K9/044 , B23K26/0604 , B23K26/0734 , B23K26/342 , B33Y10/00 , B33Y30/00 , C30B13/06 , C30B13/16 , C30B13/32 , C30B19/08 , C30B29/52 , C30B29/68 , Y02P10/295 , B22F2203/11 , B22F2202/07 , B22F3/1017
摘要： Present embodiments include an additive manufacturing tool configured to receive a metallic material and to supply a plurality of droplets to a part at a work region of the part, wherein each droplet of the plurality of droplets comprises the metallic material and a heating system comprising a primary laser system configured to generate a primary laser beam to heat a molten zone of a substrate of the part and a secondary laser system configured to generate a secondary laser beam to heat a transition zone of the substrate of the part, wherein the molten zone and the work region are colocated, and wherein the transition zone is disposed about the molten zone.

5. 发明申请

US20160017512A1 Ga2O3 SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译： Ga2O3单晶基板及其制造方法
公开(公告)号：US20160017512A1
公开(公告)日：2016-01-21
申请号：US14772885
申请日：2014-02-26
申请人： TAMURA CORPORATION
发明人： Kohei SASAKI
IPC分类号： C30B13/10 , C30B13/32 , C30B13/30 , C30B29/16
CPC分类号： C30B13/10 , C30B13/24 , C30B13/30 , C30B13/32 , C30B29/16
摘要： Provided are a Ga2O3-based single crystal substrate including a Ga2O3-based single crystal which has a high resistance while preventing a lowering of crystal quality and a production method therefor. According to one embodiment of the present invention, the production method includes growing the Ga2O3-based single crystal while adding a Fe to a Ga2O3-based raw material, the Ga2O3-based single crystal (5) including the Fe at a concentration higher than that of a donor impurity mixed in the Ga2O3-based raw material, and cutting out the Ga2O3-based single crystal substrate from the Ga2O3-based single crystal (5).
摘要翻译：提供一种包含Ga 2 O 3基单晶的Ga 2 O 3系单晶衬底，其具有高电阻，同时防止晶体质量的降低及其制备方法。根据本发明的一个实施方案，制备方法包括在Ga2O3基原料中添加Fe的同时生长Ga 2 O 3基单晶，所述Ga 2 O 3系单晶（5）的浓度高于的掺杂在Ga 2 O 3类原料中的施主杂质，从Ga 2 O 3系单晶（5）切出Ga 2 O 3系单晶衬底。

6. 发明授权

US5034199A Zone melt recrystallization apparatus 失效
标题翻译：区域熔融重结晶装置
公开(公告)号：US5034199A
公开(公告)日：1991-07-23
申请号：US120015
申请日：1987-11-13
申请人： Paul M. Zavracky , Kevin J. O'Connos
发明人： Paul M. Zavracky , Kevin J. O'Connos
IPC分类号： C30B13/00 , C30B13/24 , C30B13/32 , C30B29/06 , C30B31/12 , H01L21/00 , H01L21/20 , H01L21/324
CPC分类号： H01L21/67115 , C30B13/00 , C30B13/24 , C30B13/32 , C30B31/12 , Y10S117/90 , Y10S117/911 , Y10T117/108
摘要： The improved zone-melt recrystallization apparatus is comprised of a port system for providing a thermal barrier between the recrystallization chamber and the loader assembly. A bellows system is used to lift a plurality of pins that support a silicon wafer being recrystallized. Flexure supports are designed to constrain the motion of the pins within the desired direction of motion of the wafer.
摘要翻译：改进的区域 - 熔融重结晶装置包括用于在再结晶室和装载机组件之间提供热障的端口系统。波纹管系统用于提升支撑待重结晶的硅晶片的多个销。弯曲支撑被设计成将销的运动约束在晶片的期望的运动方向上。

7. 发明授权

US4886647A Supporting apparatus for semiconductor crystal rod 失效
标题翻译：半导体晶体棒支撑装置
公开(公告)号：US4886647A
公开(公告)日：1989-12-12
申请号：US133791
申请日：1987-12-16
申请人： Yasuhiro Ikeda , Kouji Mizuishi
发明人： Yasuhiro Ikeda , Kouji Mizuishi
IPC分类号： C30B13/32 , C30B13/28
CPC分类号： C30B13/285 , Y10S117/90 , Y10S117/911 , Y10T117/1084
摘要： A supporting apparatus for a semiconductor noncrystal rod comprises a movable ring adapted to move freely in horizontal directions unless it is engaged with the monocrystal rod, a lock means to prevent the movable ring from horizontally moving, and a drive means to elevate the movable ring.

8. 发明授权

US4362501A Process and arrangement for the zonal heating or cooling of elongate treatment members 失效
标题翻译：细长处理构件的区域加热或冷却的工艺和布置
公开(公告)号：US4362501A
公开(公告)日：1982-12-07
申请号：US230111
申请日：1981-01-29
申请人： Jean-Marie Welter
发明人： Jean-Marie Welter
IPC分类号： B22D5/04 , B01J6/00 , C21D9/00 , C30B11/00 , C30B13/00 , C30B13/32 , F27B9/24 , F27B9/00 , F27D3/00 , H05B3/62
CPC分类号： C30B13/32 , C21D9/0062 , C30B11/001 , C30B13/005 , F27B9/243
摘要： A process and arrangement for the continual zonal heating or cooling of perably elongate treatment members within at least one zone extending perpendicular or transverse to the longitudinal axis, which programmatically traverses the treatment member in the longitudinal direction.
摘要翻译：用于在垂直于或横向于纵向轴线延伸的至少一个区域内连续区域加热或冷却优选细长处理构件的方法和装置，该纵向轴线在纵向方向上以编程方式横穿处理构件。

9. 发明授权

US4201746A Apparatus for zone refining 失效
公开(公告)号：US4201746A
公开(公告)日：1980-05-06
申请号：US806139
申请日：1977-06-13
申请人： John W. Burd , Bobbie D. Stone , William F. Tucker , Kedar P. Gupta
发明人： John W. Burd , Bobbie D. Stone , William F. Tucker , Kedar P. Gupta
IPC分类号： C30B13/28 , C30B13/32 , B01J17/10
CPC分类号： C30B13/285 , C30B13/28 , C30B13/32 , Y10S403/01 , Y10T117/1068 , Y10T117/1088
摘要： Improvements in apparatus for zone refining polycrystalline semiconductor rods to produce monocrystalline semiconductor rods are disclosed. In the apparatus, an inductive heating chamber is employed which has a longitudinal dimension independent of the length of the polycrystalline semiconductor rod to be processed. The longitudinal dimension of the induction heating chamber is limited only by considerations of the space required for the RF induction heating coil and related apparatus which must be mounted within the chamber, the viewing space required for the operator to observe the zone refining process, and the heating effect on the structures above and below the chamber. First and second gas tight bellows are provided which, respectively, surround the rod holder and the seed holder. One end of each of the first and second bellows is releasably and sealingly attached to the induction heating chamber, while the other end of each of the first and second bellows is attached to the base of the rod holder or seed holder, respectively. The base of the rod holder or seed holder incorporates a gas tight magnetic fluid seal means for providing dynamic sealant between the chamber and drive means. These bellows expand and collapse with the relative movement of the rod holder and seed holder with respect to the induction heating chamber. Moreover, with the rod holder displaced from the induction heating chamber, the first bellows may be detached from the chamber and collapsed to facilitate mounting a polycrystalline semiconductor rod to be refined in the rod holder, and when the refining process is complete and the seed holder is displaced from the chamber, the second bellows can be detached from the chamber and collapsed to facilitate the removal of the refined monocrystalline rod from the seedholder. In order to protect the lowermost bellows from molten semiconductor, a plurality of telescoping metallic cylinders are positioned within the bellows and concentric therewith.

10. 发明授权

US3622280A Adjustable heating device for crucible-free zone melting a crystalline rod 失效
标题翻译：可调式加热装置，用于无结块地熔化晶体管
公开(公告)号：US3622280A
公开(公告)日：1971-11-23
申请号：US3622280D
申请日：1968-04-26
申请人： SIEMENS AG
发明人： KELLER WOLFGANG
IPC分类号： C30B13/32 , B01J17/10 , H05B5/18
CPC分类号： C30B13/32 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： Device for crucible-free zone melting a crystalline rod, particularly a semiconductor rod, includes two induction heating coils annularly surrounding the crystalline rod, and driving means for adjusting the position of the induction heating coils relative to one another in a direction transverse to the rod axis. Method of using the device includes relatively moving the induction heating coils away from one another transversely to the rod axis at the junction of a seed crystal with one end of the rod so as to fuse the seed crystal to the rod, relatively moving the induction heating coils on the one hand and the rod on the other hand along the axis of the rod and simultaneously relatively displacing the induction heating coils gradually toward one another in a direction transverse to the rod axis in conformity with an outwardly flaring conical portion of the rod extending from the seed crystal, until the induction heating coils substantially coaxially surround the main cylindrical portion of the rod.

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