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1. 发明授权

US11326271B2 Methods for forming a unitized crucible assembly 有权
公开(公告)号：US11326271B2
公开(公告)日：2022-05-10
申请号：US16796522
申请日：2020-02-20
申请人： GlobalWafers Co., Ltd.
发明人： Richard Joseph Phillips , Salvador Zepeda , Patrick Fredrick Boegemann, III , William Luter
IPC分类号： C30B15/10 , C30B29/06 , C04B38/00 , C30B15/00 , C30B35/00 , B28B1/26 , C30B29/00 , C30B15/12 , B28B1/00 , B28B1/20 , C04B35/00
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.

2. 发明授权

US10850496B2 Chemical-free production of graphene-reinforced inorganic matrix composites 有权
公开(公告)号：US10850496B2
公开(公告)日：2020-12-01
申请号：US14998729
申请日：2016-02-09
申请人： Nanotek Instruments, Inc.
发明人： Aruna Zhamu , Bor Z Jang
IPC分类号： C30B29/00 , B33Y70/00 , C03C14/00 , B22F3/105 , B33Y10/00 , C22C26/00 , B22F1/02 , C22C1/10 , C22C49/14 , C22C47/14
摘要： Provided is a simple, fast, scalable, and environmentally benign method of producing a graphene-reinforced inorganic matrix composite directly from a graphitic material, the method comprising: (a) mixing multiple particles of a graphitic material and multiple particles of an inorganic solid carrier material to form a mixture in an impacting chamber of an energy impacting apparatus; (b) operating the energy impacting apparatus with a frequency and an intensity for a length of time sufficient for peeling off graphene sheets from the graphitic material and transferring the graphene sheets to surfaces of solid inorganic carrier material particles to produce graphene coated or graphene-embedded inorganic particles inside the impacting chamber; and (c) forming graphene-coated or graphene-embedded inorganic particles into the graphene-reinforced inorganic matrix composite. Also provided is a mass of the graphene-coated or graphene-embedded inorganic particles produced by this method.

3. 发明申请

US20200287000A1 SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20200287000A1
公开(公告)日：2020-09-10
申请号：US16882153
申请日：2020-05-22
申请人： Sumitomo Electric Industries, Ltd.
发明人： Tsutomu Hori
IPC分类号： H01L29/16 , H01L21/02 , C30B29/36 , C30B25/18 , C30B25/20 , C30B29/00 , H01L29/04 , H01L29/66
摘要： A silicon carbide single crystal substrate includes a first main surface and an orientation flat. The orientation flat extends in a direction. The first main surface includes an end region extending by at most 5 mm from an outer periphery of the first main surface. In a direction perpendicular to the first main surface, an amount of warpage of the end region continuous to the orientation flat is not greater than 3 μm.

4. 发明授权

US10700169B2 Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device 有权
公开(公告)号：US10700169B2
公开(公告)日：2020-06-30
申请号：US16365172
申请日：2019-03-26
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Tsutomu Hori
IPC分类号： H01L29/16 , H01L21/02 , C30B29/36 , C30B25/18 , C30B25/20 , C30B29/00 , H01L29/04 , H01L29/66
摘要： A silicon carbide single crystal substrate includes a first main surface and an orientation flat. The orientation flat extends in a direction. The first main surface includes an end region extending by at most 5 mm from an outer periphery of the first main surface. In a direction perpendicular to the first main surface, an amount of warpage of the end region continuous to the orientation flat is not greater than 3 μm.

5. 发明申请

US20190221647A1 SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190221647A1
公开(公告)日：2019-07-18
申请号：US16365172
申请日：2019-03-26
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Tsutomu Hori
IPC分类号： H01L29/16 , H01L21/02 , H01L29/04 , C30B29/00 , H01L29/66
CPC分类号： H01L29/1608 , C30B25/186 , C30B25/20 , C30B29/00 , C30B29/36 , H01L21/02 , H01L21/02002 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L29/045 , H01L29/66068
摘要： A silicon carbide single crystal substrate includes a first main surface and an orientation flat. The orientation flat extends in a direction. The first main surface includes an end region extending by at most 5 mm from an outer periphery of the first main surface. In a direction perpendicular to the first main surface, an amount of warpage of the end region continuous to the orientation flat is not greater than 3 μm.

6. 发明授权

US09340897B2 Method for controlling the diameter of a single crystal to a set point diameter 有权
标题翻译：用于将单晶体的直径控制到设定点直径的方法
公开(公告)号：US09340897B2
公开(公告)日：2016-05-17
申请号：US14285752
申请日：2014-05-23
申请人： SILTRONIC AG
发明人： Thomas Schroeck
IPC分类号： C30B15/22 , C30B29/00 , C30B29/06 , C30B15/26
CPC分类号： C30B15/22 , C30B15/26 , C30B29/00 , C30B29/06
摘要： The diameter of a single crystal is controlled to a set point diameter during pulling of the single crystal from a melt contained in a crucible and which forms a meniscus at a phase boundary on the edge of the single crystal, the meniscus having a height which corresponds to the distance between the phase boundary and a level of the surface of the melt outside the meniscus, comprising repeatedly: determining the diameter of a bright ring on the meniscus; calculating a diameter of the single crystal while taking into account the diameter of the bright ring and the dependency of the diameter of the bright ring on the height of the meniscus and on the diameter of the single crystal itself; and calculating at least one manipulated variable for controlling the diameter of the single crystal on the basis of the difference between the calculated diameter of the single crystal and the set point diameter of the single crystal.
摘要翻译：在单晶体从包含在坩埚中的熔体中拉出单晶并且在单晶边缘处的相边界处形成弯液面时，单晶的直径被控制到设定点直径，弯液面的高度对应于相对于弯液面以外的相边界和熔体表面的水平之间的距离，包括重复：确定弯月面上的亮环的直径; 计算单晶的直径，同时考虑到亮环的直径和亮环的直径对弯液面的高度和单晶本身的直径的依赖性; 并且基于计算的单晶体的直径和单晶的设定点直径之间的差来计算用于控制单晶直径的至少一个操作变量。

7. 发明授权

US08641999B2 Carbon grit 有权
标题翻译：碳砂
公开(公告)号：US08641999B2
公开(公告)日：2014-02-04
申请号：US11178622
申请日：2005-07-11
申请人： Patrick J. Doering , Alfred Genis , Robert C. Linares , John J. Calabria
发明人： Patrick J. Doering , Alfred Genis , Robert C. Linares , John J. Calabria
IPC分类号： B01J3/06 , C01B31/02 , B03C1/00 , C23C16/00 , C01B31/00 , C30B29/00
CPC分类号： C30B25/105 , C01B32/05 , C01B32/25 , C30B29/04
摘要： Plasma assisted chemical vapor deposition is used to form single crystal diamond from a seed and methane. A susceptor is used to support the seed. Under certain conditions, crystalline grit is formed in addition to the diamond. The crystalline grit in one embodiment comprises mono crystals or twin crystals of carbon, each having its own nucleus. The crystals form in columns or tendrils to the side of the monocrystalline diamond or off a side of the susceptor. The crystals may have bonding imperfections which simulate doping, providing conductivity. They may also be directly doped. Many tools may be coated with the grit.
摘要翻译：等离子辅助化学气相沉积用于从种子和甲烷形成单晶金刚石。一只感受器用于支撑种子。在某些条件下，除了金刚石之外还形成结晶砂粒。在一个实施方案中的结晶砂粒包括单晶或双晶碳，每个具有其自身的核。晶体在柱状或卷须形成单晶金刚石侧面或离开感受器的一侧。晶体可能具有模拟掺杂的键合缺陷，提供电导率。它们也可以直接掺杂。许多工具可能涂上砂砾。

8. 发明授权

US07858181B2 Growth of single crystal nanowires 有权
标题翻译：单晶纳米线的生长
公开(公告)号：US07858181B2
公开(公告)日：2010-12-28
申请号：US12004276
申请日：2007-12-20
申请人： Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
发明人： Tobias Hanrath , Xianmao Lu , Keith Johnston , Brian Korgel
IPC分类号： C30B29/00 , C30B25/00
CPC分类号： H01L29/0665 , B82Y10/00 , C30B29/06 , C30B29/08 , C30B29/605 , C30B29/62 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02628 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L2224/13 , Y10S977/754 , Y10S977/762 , Y10S977/778 , Y10T428/26 , Y10T428/2913 , Y10T428/2929 , Y10T428/2973
摘要： The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of the nanowire. Nanocrystals in solution may also be used to make the nanowires of the present invention. Supercritical fluid reaction conditions can be used in a continuous or semi-batch process.
摘要翻译：本发明提供基本上直的并且基本上不含纳米颗粒的纳米线及其制备方法。纳米线可以通过种子方法制备，其中与底物结合的纳米晶体用于促进纳米线的生长。溶液中的纳米晶体也可用于制备本发明的纳米线。超临界流体反应条件可以连续或半间歇的方法使用。

9. 发明授权

US07326296B2 High throughput screening of crystallization of materials 有权
标题翻译：高通量筛选材料结晶
公开(公告)号：US07326296B2
公开(公告)日：2008-02-05
申请号：US11135923
申请日：2005-05-23
申请人： Stephen R. Quake , Carl L. Hansen , James M. Berger
发明人： Stephen R. Quake , Carl L. Hansen , James M. Berger
IPC分类号： C30B29/00
CPC分类号： C30B29/00 , B01D9/00 , B01D9/0072 , B01D9/0077 , B01J19/0046 , B01J2219/00274 , B01J2219/00286 , B01J2219/00317 , B01J2219/00389 , B01J2219/00418 , B01J2219/00432 , B01J2219/00585 , B01J2219/00756 , B01J2219/00891 , B01J2219/00907 , B01J2219/00952 , B01L3/06 , B01L3/5025 , B01L3/50273 , B01L3/502738 , B01L3/502753 , B01L7/54 , B01L9/527 , B01L2200/025 , B01L2200/027 , B01L2200/0605 , B01L2200/10 , B01L2300/0681 , B01L2300/0816 , B01L2300/0861 , B01L2300/123 , B01L2300/14 , B01L2300/18 , B01L2400/0481 , B01L2400/0655 , B01L2400/0688 , B81B2201/051 , B81B2201/054 , B81B2203/0127 , B81B2203/0315 , B81C1/00119 , B81C99/0065 , C30B7/14 , C30B29/54 , C30B29/58 , F04B43/043 , F16K99/0001 , F16K99/0015 , F16K99/0046 , F16K99/0051 , F16K99/0059 , F16K2099/0074 , F16K2099/0078 , F16K2099/008 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1024
摘要： High throughput screening of crystallization of a target material is accomplished by simultaneously introducing a solution of the target material into a plurality of chambers of a microfabricated fluidic device. The microfabricated fluidic device is then manipulated to vary the solution condition in the chambers, thereby simultaneously providing a large number of crystallization environments. Control over changed solution conditions may result from a variety of techniques, including but not limited to metering volumes of crystallizing agent into the chamber by volume exclusion, by entrapment of volumes of crystallizing agent determined by the dimensions of the microfabricated structure, or by cross-channel injection of sample and crystallizing agent into an array of junctions defined by intersecting orthogonal flow channels.
摘要翻译：目标材料的结晶化的高通量筛选是通过将目标材料的溶液同时引入微细加工的流体装置的多个室来实现的。然后对微制造的流体装置进行操作以改变室中的溶液状态，从而同时提供大量的结晶环境。改变的溶液条件的控制可以由各种技术产生，包括但不限于通过体积排阻将结晶剂计量到室中的体积，通过捕获通过微结构结构的尺寸确定的结晶剂的体积，将样品和结晶剂通道注入由相交的正交流动通道限定的连接阵列。

10. 发明授权

US4657627A Carbon fiber substrate pretreatment for manufacturing crack-free, large-surface silicon crystal bodies for solar cells 失效
标题翻译：碳纤维基板预处理，用于制造无裂纹，大面积的太阳能电池的硅晶体
公开(公告)号：US4657627A
公开(公告)日：1987-04-14
申请号：US714842
申请日：1985-03-22
申请人： Lore Bernewitz , Richard Falckenberg , Gerhard Hoyler , Josef Grabmaier
发明人： Lore Bernewitz , Richard Falckenberg , Gerhard Hoyler , Josef Grabmaier
IPC分类号： H01L31/04 , C30B15/00 , C30B15/06 , C30B29/64 , H01L21/208 , B05D5/12 , C30B19/12 , C30B29/00 , H01L31/18
CPC分类号： C30B15/007 , C30B15/06 , Y02E10/545 , Y02E10/546 , Y02E10/548
摘要： A method for manufacturing crack-free, large-surface silicon crystal bodies for solar cells wherein a carrier member composed of a carbon fiber fabric is coated with silicon by bringing a molten silicon into contact with the carrier member and crystallizing it. In order to improve the wettability, the carrier member is subjected to an activating surface treatment before the coating. The method is useful for continuous manufacture of silicon sheets for solar cells.
摘要翻译：制造太阳能电池的无裂纹的大面积硅晶体的方法，其中通过使熔融硅与载体部件接触并使其结晶而将由碳纤维织物构成的载体部件用硅覆盖。为了提高润湿性，在涂布前对承载构件进行活化表面处理。该方法对于连续制造太阳能电池用硅片是有用的。

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