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1. 外观设计

USD297920S Automobile 失效
公开(公告)号：USD297920S
公开(公告)日：1988-10-04
申请号：US741443
申请日：1985-06-05
申请人： Masato Nakano , Akio Koike , Yusuke Saito
设计人： Masato Nakano , Akio Koike , Yusuke Saito

2. 外观设计

USD298522S Automobile 失效
公开(公告)号：USD298522S
公开(公告)日：1988-11-15
申请号：US804582
申请日：1985-12-04
申请人： Masato Nakano , Tomoyuki Arai , Yusuke Saito
设计人： Masato Nakano , Tomoyuki Arai , Yusuke Saito

3. 发明授权

US09885439B2 Pipe joint 有权
公开(公告)号：US09885439B2
公开(公告)日：2018-02-06
申请号：US13143125
申请日：2010-01-08
申请人： Shigeyuki Joh , Yusuke Saito
发明人： Shigeyuki Joh , Yusuke Saito
IPC分类号： F16L27/00 , F16L41/10 , F16L41/00
CPC分类号： F16L41/10 , F16L41/007 , F16L2201/10
摘要： In a pipe joint, a tapered male screw thread is provided at one end and a joint connection section which is connected to a joint section is provided at the other end. The tapered male screw thread has a length adapted so that, when the tapered male screw thread has been fastened to a tapered female screw thread formed in an end cap, the entire length is engaged with the tapered female screw thread, and the sealing effect is obtained by a seal member.

4. 发明授权

US09731322B2 Plating apparatus, plating method and storage medium having plating program stored thereon 有权
公开(公告)号：US09731322B2
公开(公告)日：2017-08-15
申请号：US13881431
申请日：2011-08-24
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
IPC分类号： B05D7/00 , B05B12/04 , B05B12/14 , B05D1/02 , C25D17/00 , C23C18/16 , C23C18/31 , C23C18/54
CPC分类号： B05D7/50 , B05B12/04 , B05B12/14 , B05D1/02 , C23C18/1632 , C23C18/1651 , C23C18/31 , C23C18/54 , C25D17/001
摘要： A plating apparatus 1 can perform plating processes by supplying plating liquids onto a surface of a substrate 2. The plating apparatus 1 includes a substrate rotating holder configured to hold and rotate the substrate 2; plating liquid supply units 29 and 30 configured to supply different kinds of plating liquids onto the surface of the substrate 2; a plating liquid drain unit 31 configured to drain out the plating liquids dispersed from the substrate 2 depending on the kinds of the plating liquids; and a controller 32 configured to control the substrate rotating holder 25, the plating liquid supply units 29 and 30, the plating liquid drain unit 31. While the substrate 2 is held and rotated, the plating processes are performed on the surface of the substrate 2 in sequence by supplying the different kinds of the plating liquids onto the surface of the substrate 2.

5. 发明授权

US08206785B2 Cap metal forming method 有权
标题翻译：盖金属成型方法
公开(公告)号：US08206785B2
公开(公告)日：2012-06-26
申请号：US12405597
申请日：2009-03-17
申请人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
发明人： Takayuki Toshima , Mitsuaki Iwashita , Takashi Tanaka , Yusuke Saito
IPC分类号： B05D1/36 , B05D5/00 , B05D1/12
CPC分类号： H01L21/288 , C23C18/1628 , C23C18/1669 , H01L21/6715 , H01L21/76849
摘要： A cap metal forming method capable of obtaining a uniform film thickness on the entire surface of a substrate is provided. The method for forming a cap metal on a copper wiring formed on a processing target surface of a substrate includes: holding the substrate so as to be rotatable; rotating the substrate in a processing target surface direction of the substrate; locating an end portion of an agitation member so as to face the processing target surface of a periphery portion of the substrate with a preset gap maintained therebetween; supplying a plating processing solution onto the processing target surface; and stopping the supply of the plating processing solution and moving the agitation member such that the end portion of the agitation member is separated away from the processing target surface of the substrate.
摘要翻译：提供能够在基板的整个表面上获得均匀的膜厚度的盖金属成形方法。在形成在基板的加工对象面上的铜布线上形成盖金属的方法包括：保持基板以可旋转; 在所述基板的处理对象面方向上旋转所述基板; 将搅拌构件的端部定位成面对保持在其间的预设间隙的基板的周边部分的处理目标表面; 将电镀处理液供给到所述加工对象面上; 停止电镀处理液的供给，使搅拌部件移动，使搅拌部件的端部与基板的加工对象面分离。

6. 发明申请

US20070107751A1 Ozone processing apparatus and ozone processing method 失效
标题翻译：臭氧处理装置和臭氧处理方法
公开(公告)号：US20070107751A1
公开(公告)日：2007-05-17
申请号：US10581729
申请日：2004-12-16
申请人： Yoshichika Tokuno , Norihiro Ito , Takehiko Orii , Mitsunori Nakamori , Tadashi Iino , Hiroki Ohno , Yusuke Saito
发明人： Yoshichika Tokuno , Norihiro Ito , Takehiko Orii , Mitsunori Nakamori , Tadashi Iino , Hiroki Ohno , Yusuke Saito
IPC分类号： B08B7/04 , C23G1/00 , B08B3/00
CPC分类号： H01L21/68721 , B01D53/002 , B01D2257/106 , C01B13/10 , H01L21/6715 , H01L21/68742 , H01L21/68785
摘要： Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.
摘要翻译：将水蒸汽与由放电型臭氧发生器产生的O 3气体混合。混合流体由冷却器冷却，由此含有的O 3 3气体中的杂质如金属和氮氧化物溶解在冷凝水中。随后，气液分离器从冷凝水中分离出O 3 N 3气体。水蒸汽再次与O 3 3气体混合。混合流体通过金属捕集器，该金属捕集器由含有多个硅芯片的容器组成，作为金属吸附剂，从而从其中除去剩余的金属。

7. 发明申请

US20070074747A1 Substrate processing method, substrate processing apparatus and computer-readable memory medium 失效
标题翻译：基板处理方法，基板处理装置和计算机可读存储介质
公开(公告)号：US20070074747A1
公开(公告)日：2007-04-05
申请号：US10579423
申请日：2004-12-07
申请人： Takayuki Toshima , Tadashi Iino , Yusuke Saito , Mitsunori Nakamori , Noritaka Uchida , Takehiko Orii
发明人： Takayuki Toshima , Tadashi Iino , Yusuke Saito , Mitsunori Nakamori , Noritaka Uchida , Takehiko Orii
IPC分类号： B08B3/00
CPC分类号： G03F7/427 , H01L21/31138
摘要： A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.
摘要翻译：从具有ArF抗蚀剂膜的晶片去除ArF抗蚀剂膜的基板处理方法。由于在ArF抗蚀剂膜上进行紫外线照射处理，然后向ArF抗蚀剂膜供给臭氧气体和水蒸汽，所以ArF抗蚀剂膜变为水溶性状态。此后，通过将纯水供给到改变成水溶性状态的ArF抗蚀剂膜，从基板除去ArF抗蚀剂膜。

8. 发明授权

US06608217B2 Process for producing 4-substituted benzopyran derivatives 失效
标题翻译：制备4-取代苯并吡喃衍生物的方法
公开(公告)号：US06608217B2
公开(公告)日：2003-08-19
申请号：US10255099
申请日：2002-09-26
申请人： Takeo Komata , Masaki Fujiwara , Takanao Tarui , Yusuke Saito , Hiroshi Minesaki
发明人： Takeo Komata , Masaki Fujiwara , Takanao Tarui , Yusuke Saito , Hiroshi Minesaki
IPC分类号： C07D31104
CPC分类号： C07D311/58 , C07C45/46 , C07C45/673 , C07C49/84 , C07C49/825
摘要： The present invention relates to a first process for producing a 2,2-bis(fluoromethyl)-6-(perfluoroalkyl)-2H-1-benzopyran-4-carboxylic acid. The first process includes the steps of (a) reacting a 2,2-bis(fluoromethyl)-6-(perfluoroalkyl)-2H-1-benzopyran-4-one with a perfluoroalkanesulfonic acid anhydride in the presence of a base, thereby obtaining a perfluoroalkanesulfonic 2,2-bis(fluoromethyl)-6-(perfluoroalkyl)-2H- 1-benzopyran-4-yl ester; and (b) reacting the benzopyranyl ester with carbon monoxide in the presence of a palladium complex compound and a base, thereby obtaining the carboxylic acid. The present invention further relates to a second process for producing a 2-hydroxy-5-(perfluoroalkyl) acetophenone, which can be a raw material for producing the carboxylic acid. The second process includes the steps of (c) reacting a 4-(perfluoroalkyl)alkoxybenzene with acetic anhydride or an acyl halide in the presence of a Lewis acid, thereby obtaining a 2-alkoxy-5-(perfluoroalkyl)acetophenone; and (d) dealkylating the 2-alkoxy-5-(perfluoroalkyl) acetophenone by a dealkylating agent.
摘要翻译：本发明涉及生产2,2-双（氟甲基）-6-（全氟烷基）-2H-1-苯并吡喃-4-羧酸的第一种方法。第一种方法包括以下步骤：（a）在碱的存在下使2,2-双（氟甲基）-6-（全氟烷基）-2H-1-苯并吡喃-4-酮与全氟烷基磺酸酐反应，从而得到全氟烷基磺酸2,2-双（氟甲基）-6-（全氟烷基）-2H-苯并吡喃-4-基酯; 和（b）在钯络合物和碱的存在下使苯并吡喃基酯与一氧化碳反应，由此得到羧酸。本发明还涉及可用作生产羧酸的原料的2-羟基-5-（全氟烷基）苯乙酮的制备方法。第二种方法包括以下步骤：（c）在路易斯酸存在下使4-（全氟烷基）烷氧基苯与乙酸酐或酰卤反应，由此得到2-烷氧基-5-（全氟烷基）苯乙酮; 和（d）通过脱烷基化剂使2-烷氧基-5-（全氟烷基）苯乙酮脱烷基化。

9. 发明授权

US06400018B2 Via plug adapter 有权
公开(公告)号：US06400018B2
公开(公告)日：2002-06-04
申请号：US09141217
申请日：1998-08-27
申请人： William J. Clatanoff , Gayle R. T. Schueller , Robert J. Schubert , Yusuke Saito , Hideo Yamazaki , Hideaki Yasui
发明人： William J. Clatanoff , Gayle R. T. Schueller , Robert J. Schubert , Yusuke Saito , Hideo Yamazaki , Hideaki Yasui
IPC分类号： H01L2348
CPC分类号： H01L24/32 , H01L23/49816 , H01L23/49827 , H01L23/4985 , H01L24/48 , H01L24/73 , H01L2224/05599 , H01L2224/16237 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/85399 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H05K3/3436 , H05K3/363 , H05K3/4007 , H05K2201/0367 , H05K2201/0394 , H05K2201/09472 , H05K2201/09563 , H05K2201/09827 , H05K2201/10681 , H05K2201/10734 , Y02P70/613 , H01L2924/00012 , H01L2224/29099 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A circuit includes a substrate having a dielectric layer with a first surface and a second surface. A conductive layer is formed on the first surface. A beveled via is formed in a dielectric layer of the substrate. The via has a first opening of a first width in the first surface, and a second opening of a second width in the second surface, the second width being greater than the first width. A conductive plug is connected to the conductive layer. The plug is formed in the via and extends from adjacent the first opening toward the second opening, and terminates adjacent the second opening at a plug interface surface. A conductive solder ball is connected to the plug interface surface and extends to protrude from the second surface.

10. 发明授权

US09421569B2 Plating apparatus, plating method and storage medium 有权
标题翻译：电镀装置，电镀方法和储存介质
公开(公告)号：US09421569B2
公开(公告)日：2016-08-23
申请号：US13981124
申请日：2012-01-13
申请人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
发明人： Takashi Tanaka , Yusuke Saito , Mitsuaki Iwashita , Takayuki Toshima
IPC分类号： B05C5/00 , B05C9/14 , H01L21/3205 , B05B7/16 , C23C18/16 , H01L21/288 , B05D1/02 , C25D17/00 , H01L21/67 , G03F7/16
CPC分类号： B05C5/001 , B05D1/02 , C23C18/1614 , C23C18/1619 , C23C18/1676 , C23C18/168 , C25D17/001 , G03F7/162 , H01L21/288 , H01L21/67017
摘要： A plating apparatus includes a substrate holding/rotating device that holds/rotates a substrate; and a plating liquid supplying device that supplies a plating liquid onto the substrate. The plating liquid supplying device includes a supply tank that stores the plating liquid; a discharge nozzle that discharges the plating liquid onto the substrate; and a plating liquid supplying line through which the plating liquid of the supply tank is supplied into the discharge nozzle. Further, a first heating device is provided at either one of the supply tank and the plating liquid supplying line of the plating liquid supplying device, and heats the plating liquid to a first temperature. Furthermore, a second heating device is provided at the plating liquid supplying line between the first heating device and the discharge nozzle, and heats the plating liquid to a second temperature equal to or higher than the first temperature.
摘要翻译：电镀装置包括：保持/旋转基板的基板保持/旋转装置; 以及将电镀液体供给到基板上的电镀液供给装置。电镀液供给装置包括：储存电镀液的供给槽; 排出喷嘴，其将所述电镀液体排出到所述基板上; 以及电镀液体供给管路，供给槽的镀液通过该供给线供给到排出喷嘴。此外，第一加热装置设置在电镀液供给装置的供给罐和电镀液供给管线中的任一个处，并将电镀液加热至第一温度。此外，在第一加热装置和排出喷嘴之间的电镀液供给管线处设置第二加热装置，并将镀液加热到等于或高于第一温度的第二温度。

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