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1. 发明专利

JP2013127526A Resist pattern formation method and resist composition 有权
标题翻译：电阻图案形成方法和耐蚀组合物
公开(公告)号：JP2013127526A
公开(公告)日：2013-06-27
申请号：JP2011276440
申请日：2011-12-16
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NITO TAKEHITO , SHIMIZU HIROAKI
IPC分类号： G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist pattern formation method useful for forming a fine pattern, and a resist composition used therefor.SOLUTION: A resist pattern formation method includes the steps of: forming, on a support medium 1, a resist film 2 having an association structure of an acidic group and a cation having light-absorbing properties; exposing the resist film 2 to light and destructing the association structure for exposure of the acidic group; and developing the resist film 2 with developer containing an organic solvent. There is also provided a resist composition used therefor.
摘要翻译：要解决的问题：提供用于形成精细图案的抗蚀剂图案形成方法和用于其的抗蚀剂组合物。解决方案：抗蚀剂图案形成方法包括以下步骤：在支撑介质1上形成具有酸性基团和具有光吸收特性的阳离子的缔合结构的抗蚀剂膜2; 使抗蚀剂膜2暴露于光照并破坏用于暴露酸性基团的缔合结构; 并用含有机溶剂的显影剂显影抗蚀膜2。还提供了用于其的抗蚀剂组合物。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013101355A Resist composition, method for forming resist pattern, compound, acid generator 有权
标题翻译：抗蚀剂组合物，形成耐火图案的方法，化合物，酸发生器
公开(公告)号：JP2013101355A
公开(公告)日：2013-05-23
申请号：JP2012268855
申请日：2012-12-07
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KAWAKAMI AKINARI , UTSUMI YOSHIYUKI , HANEDA HIDEO , NAKAMURA TAKESHI , SHIMIZU HIROAKI , ISHIZUKA KEITA , SESHIMO TAKEHIRO , MATSUZAWA KENSUKE
IPC分类号： G03F7/004 , C07C309/04 , C07C309/07 , C07C309/10 , C07C309/11 , C07C309/17 , C07C311/48 , C07C311/51 , C07C381/12 , C07D213/79 , C07D285/00 , C07D327/04 , C07D493/18 , C08F20/18 , C08F20/36 , C09K3/00 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To provide a new compound useful as an acid generator for a resist composition, an acid generator comprising the compound, a resist composition containing the acid generator, and a method for forming a resist pattern using the resist composition.SOLUTION: The resist composition comprises: a base component the solubility of which with an alkali developing solution changes by an action of an acid; and an acid generator component that generates an acid by exposure. The acid generator component contains an acid generator comprising a compound expressed by general formula (b1-11). In formula (b1-11), at least one of R" to R" is a substituted aryl group having a group expressed by formula (I) as a substituent, and W in formula (I) represents a divalent connecting group; and Xrepresents an anion expressed by formula (b-3) or (b-4).
摘要翻译：要解决的问题：为了提供一种可用作抗蚀剂组合物的酸发生剂的新化合物，包含该化合物的酸产生剂，含有酸产生剂的抗蚀剂组合物和使用该抗蚀剂组合物形成抗蚀剂图案的方法。抗蚀剂组合物包括：其与碱性显影液的溶解度通过酸的作用而改变的碱成分; 以及通过曝光产生酸的酸发生剂组分。酸产生剂组分含有由通式（b1-11）表示的化合物的酸发生剂。在式（b1-11）中，R 7 “至R 9 ”中的至少一个是具有由式（I）表示的基团作为取代基，式（I）中的W表示二价连接基团; - 表示由式（b-3）或（b-4）表示的阴离子。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013080245A Resist composition, method for forming resist pattern, compound and acid generator 有权
标题翻译：抗蚀剂组合物，形成耐火模式，化合物和酸发生器的方法
公开(公告)号：JP2013080245A
公开(公告)日：2013-05-02
申请号：JP2012268856
申请日：2012-12-07
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KAWAKAMI AKINARI , UTSUMI YOSHIYUKI , HANEDA HIDEO , NAKAMURA TAKESHI , SHIMIZU HIROAKI , ISHIZUKA KEITA , SESHIMO TAKEHIRO , MATSUZAWA KENSUKE
IPC分类号： G03F7/004 , C07C309/17 , C07C381/12 , C08F20/10 , C09K3/00 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an acid generator useful for a resist composition, a resist composition containing the acid generator, and a method for forming a resist pattern using the resist composition.SOLUTION: A resist composition includes a base component (A) whose solubility in an alkali developer changes by an action of an acid and an acid generator component (B) generating an acid by exposure, where the acid generator component (B) comprises an acid generator (B1) made of a compound represented by the general formula (b1-11). In the formula (b1-11), Rto Rare each independently an alkyl group or an alkoxy group, n1 is an integer of 1 to 5, and n3 and n4 are each independently an integer of 0 to 3. Xis an anion.
摘要翻译：要解决的问题：提供一种可用于抗蚀剂组合物的酸发生剂，含有酸产生剂的抗蚀剂组合物和使用该抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：抗蚀剂组合物包括其在碱性显影剂中的溶解度由酸和通过暴露产生酸的酸产生剂组分（B）的作用而改变的碱组分（A），其中酸产生剂组分（B）包含由通式（b1-11）表示的化合物制成的酸发生剂（B1）。在式（b1-11）中，R 101 分别独立地为烷基或烷氧基，n1 是1〜5的整数，n3和n4各自独立地为0〜3的整数。X - 是阴离子。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2013073061A Method for forming resist pattern 有权
标题翻译：形成电阻图案的方法
公开(公告)号：JP2013073061A
公开(公告)日：2013-04-22
申请号：JP2011212490
申请日：2011-09-28
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , YOKOYA JIRO , NITO TAKEHITO
IPC分类号： G03F7/38 , G03F7/004 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of forming a negative pattern having high resolution with suppressed elution.SOLUTION: There is provided a method for forming a resist pattern, the method comprising the steps of: (1) forming a resist film by applying a resist composition containing a base component, a photobase generator component and an acid supply component onto a support by a spin coat method; (2) exposing the resist film to light without prebaking the resist film; (3) baking the film after the step (2) to neutralize a base generated from the photobase generator component by exposure and an acid derived from the acid supply component in an exposed portion of the resist film and increasing the solubility to an alkali developing solution of the base component by an action of the acid derived from the acid supply component in an unexposed portion of the resist film; and (4) subjecting the resist film to alkali developing to form a negative resist pattern. In the application step (1), the rotation time after supplying a resist liquid to a substrate is 50 seconds or more.
摘要翻译：要解决的问题：提供一种形成能够形成具有高分辨率的负图案并具有抑制洗脱的抗蚀剂图案的方法。提供一种形成抗蚀剂图案的方法，该方法包括以下步骤：（1）通过将含有基底组分，光碱产生剂组分和酸供应组分的抗蚀剂组合物施加到通过旋涂法的支持; （2）将抗蚀剂膜曝光而不预抗蚀膜; （3）在步骤（2）之后烘烤膜以通过曝光中和由光源产生剂组分产生的碱和在抗蚀剂膜的暴露部分中衍生自酸供应组分的酸，并增加其对碱性显影溶液的溶解度通过在抗蚀剂膜的未曝光部分中衍生自酸供应成分的酸的作用产生基础成分; 和（4）使抗蚀剂膜进行碱显影以形成负的抗蚀剂图案。在应用步骤（1）中，将抗蚀剂液体供给到基板之后的旋转时间为50秒以上。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013072976A Resist composition and method for forming resist pattern 有权
标题翻译：用于形成电阻图案的耐蚀组合物和方法
公开(公告)号：JP2013072976A
公开(公告)日：2013-04-22
申请号：JP2011211472
申请日：2011-09-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , YOKOYA JIRO , NITO TAKEHITO
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern and a resist composition capable of forming a negative pattern with high resolution and in good shape.SOLUTION: There is provided a method for forming a resist pattern, the method comprising the steps of: (1) forming a resist film by applying a resist composition comprising a base component whose solubility to an alkali developing solution is increased by an action of an acid and a compound represented by the general formula (C1) onto a support; (2) exposing the resist film to light; (3) baking the film after the step (2); and (4) subjecting the resist film to alkali developing to form a negative resist pattern in which the unexposed portion of the resist film is dissolved and removed, and the resist composition used in the step (1). In the formula, at least either one of Ror Ris an alkyl group or a phenyl group.
摘要翻译：要解决的问题：提供一种形成抗蚀剂图案的方法和能够以高分辨率和良好形状形成负图案的抗蚀剂组合物。提供了一种形成抗蚀剂图案的方法，所述方法包括以下步骤：（1）通过涂布抗蚀剂组合物形成抗蚀剂组合物，所述抗蚀剂组合物包含碱性组分，其对碱性显影液的溶解度增加酸和由通式（C1）表示的化合物对载体的作用; （2）将抗蚀剂膜曝光; （3）在步骤（2）之后烘烤薄膜; 和（4）使抗蚀剂膜进行碱显影以形成其中抗蚀剂膜的未曝光部分被溶解和去除的负型抗蚀剂图案，以及在步骤（1）中使用的抗蚀剂组合物。在该式中，R“SP POS =”POST“> 1 或R 2 中的至少一个是烷基或苯基。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013068840A Resist composition and method for forming resist pattern 有权
标题翻译：用于形成电阻图案的耐蚀组合物和方法
公开(公告)号：JP2013068840A
公开(公告)日：2013-04-18
申请号：JP2011208013
申请日：2011-09-22
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： YOKOYA JIRO , NAKAMURA TAKESHI , SHIMIZU HIROAKI , NITO TAKEHITO
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern by which a negative pattern can be formed, and to provide a resist composition which can be used for the method and allows formation of a resist film with high uniformity of film thickness on a support body.SOLUTION: The method for forming a resist pattern includes steps of: (1) forming a resist film by applying on a support body a resist composition, which is prepared by dissolving a base component showing increase in solubility in an alkali developing solution by an action of an acid, a photo-base generator component generating a base by exposure, and an acid supply component in a specified organic solvent component (S); (2) exposing the resist film without prebaking the resist film; (3) baking the resist film after the step (2); and (4) forming a negative resist pattern by developing the resist film with an alkali to dissolve and remove an unexposed portion of the resist film. The resist composition is also disclosed to be used in the above step (1).
摘要翻译：要解决的问题：提供一种形成能够形成负型图案的抗蚀剂图案的方法，并提供可用于该方法的抗蚀剂组合物，并且允许形成具有高均匀性的抗蚀剂膜支撑体上的膜厚度。解决方案：形成抗蚀剂图案的方法包括以下步骤：（1）通过在支撑体上施加抗蚀剂组合物形成抗蚀剂膜，该抗蚀剂组合物通过将显示出增加溶解度的碱性组分溶解在碱性显影液中而制备通过酸的作用，通过曝光产生碱的光产生剂组分和指定的有机溶剂组分（S）中的酸供应组分; （2）使抗蚀剂膜曝光，而不对抗蚀剂膜进行预烘烤; （3）在步骤（2）之后烘烤抗蚀膜; 和（4）通过用碱显影抗蚀剂膜形成负的抗蚀剂图案，以溶解和除去抗蚀剂膜的未曝光部分。还公开了将抗蚀剂组合物用于上述步骤（1）中。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013068822A Resist composition and method for forming resist pattern 有权
标题翻译：用于形成电阻图案的耐蚀组合物和方法
公开(公告)号：JP2013068822A
公开(公告)日：2013-04-18
申请号：JP2011207773
申请日：2011-09-22
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , YOKOYA JIRO , NITO TAKEHITO
IPC分类号： G03F7/038 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, by which a negative resist pattern can be formed with high resolution and high sensitivity through an alkali development process.SOLUTION: The method for forming a resist pattern includes steps of: (1) forming a resist film by applying on a support body a resist composition comprising a base component showing increase in solubility in an alkali developing solution by an action of an acid and a photo-base generator component; (2) exposing the resist film; (3) baking the resist film after the step (2) to neutralize the base generated from the photo-base generator component in an exposed portion of the resist film with an acid that is preliminarily supplied to the resist film and to increase the solubility of the base component in an alkali developing solution by an action of the acid in an unexposed portion of the resist film; and (4) forming a negative resist pattern by developing the resist film with an alkali. In step (3), baking is carried out at 100°C or lower.
摘要翻译：要解决的问题：提供一种形成抗蚀剂图案的方法，通过其可以通过碱显影工艺以高分辨率和高灵敏度形成负的抗蚀剂图案。解决方案：形成抗蚀剂图案的方法包括以下步骤：（1）通过在支撑体上施加抗蚀剂组合物来形成抗蚀剂膜，抗蚀剂组合物包含基本组分，其显示出在碱性显影液中的溶解度增加，酸和光源发生器组件; （2）曝光抗蚀膜; （3）在步骤（2）之后烘烤抗蚀剂膜，以预先提供给抗蚀剂膜的酸将抗蚀剂膜的暴露部分中的由光产生剂成分产生的碱中和，并增加其抗蚀剂的溶解度通过在抗蚀剂膜的未曝光部分中的酸作用在碱性显影液中的碱成分; 和（4）通过用碱显影抗蚀剂膜形成负的抗蚀剂图案。在步骤（3）中，在100℃以下进行烘烤。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013064775A Method for forming photoresist pattern 有权
标题翻译：形成光电子图案的方法
公开(公告)号：JP2013064775A
公开(公告)日：2013-04-11
申请号：JP2011202030
申请日：2011-09-15
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： YOKOYA JIRO , NAKAMURA TAKESHI , SHIMIZU HIROAKI , NITO TAKEHITO
IPC分类号： G03F7/038 , G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of forming a negative pattern with high resolution.SOLUTION: A method for forming a resist pattern includes the steps of: (1) forming a resist film by applying a resist composition containing a base component whose solubility to an alkali developing solution is increased by the action of an acid, a photo-base generator component and an acid generator component onto a support medium; (2) subjecting the resist film to exposure without subjecting the resist film to pre-baking; (3) baking after the step (2) and neutralizing a base generated from the photo-base generator component by the exposure and an acid derived from the acid feed component at an exposed portion of the resist film to increase the solubility to an alkali developing solution of the base component by the action of an acid derived from the acid feed component at an unexposed portion of the resist film; and (4) alkali-developing the resist film to form a negative resist pattern in which an unexposed part of the resist film is dissolved and removed.
摘要翻译：要解决的问题：提供一种形成能够以高分辨率形成负图案的抗蚀剂图案的方法。解决方案：形成抗蚀剂图案的方法包括以下步骤：（1）通过施加含有碱性组分的抗蚀剂组合物形成抗蚀剂膜，其中碱性组分的溶解度通过酸的作用而增加，光源发生器部件和酸产生器部件到支撑介质上; （2）在不对抗蚀剂膜进行预烘烤的情况下对抗蚀剂膜进行曝光; （3）在步骤（2）之后烘烤并通过曝光中和由光源发生器组件产生的碱和在抗蚀剂膜的暴露部分从酸进料组分衍生的酸，以增加对碱显影的溶解度通过在抗蚀剂膜的未曝光部分中由酸进料组分衍生的酸的作用使基础组分的溶液; 和（4）对抗蚀剂膜进行碱显影以形成抗蚀剂图案，其中抗蚀剂膜的未曝光部分被溶解并除去。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012255161A Compound, polymeric compound, positive resist composition and method of forming resist pattern 有权
标题翻译：化合物，聚合物，阳离子组合物和形成耐药性图案的方法
公开(公告)号：JP2012255161A
公开(公告)日：2012-12-27
申请号：JP2012168835
申请日：2012-07-30
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIONO HIROHISA , DAZAI NAOHIRO , SHIMIZU HIROAKI
IPC分类号： C08F20/26 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a novel polymeric compound which can be used as a base composition for a positive resist composition; a compound which is useful as a monomer for the polymeric compound; a positive resist composition containing the polymeric compound; and a method of forming a resist pattern using the positive resist composition.SOLUTION: The compound is represented by general formula (I). The polymeric compound has a structural unit (a0) represented by general formula (a0-1). In general formula (I), Ris a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; A is a ≥2C divalent hydrocarbon group (other than a group obtained by removing two hydrogen atoms from adamantane) which may have a substituent (other than an oxygen atom (=O)); B is a ≥1C divalent hydrocarbon group which may have a substituent; and Ris an acid dissociable, dissolution inhibiting group. In general formula (a0-1), Ris a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; A is a ≥2C divalent hydrocarbon group (other than a group obtained by removing two hydrogen atoms from adamantane) which may have a substituent (other than an oxygen atom (=O)); B is a ≥1C divalent hydrocarbon group which may have a substituent; and Ris an acid dissociable, dissolution inhibiting group.
摘要翻译：要解决的问题：提供可用作正性抗蚀剂组合物的基础组合物的新型聚合物; 可用作聚合物的单体的化合物; 含有聚合物的正性抗蚀剂组合物; 以及使用正性抗蚀剂组合物形成抗蚀剂图案的方法。化合物由通式（I）表示。高分子化合物具有由通式（a0-1）表示的结构单元（a0）。在通式（I）中，R 1是氢原子，低级烷基或卤代低级烷基; A是可以具有取代基（除了氧原子（= O））以外的≥2C的二价烃基（除了从金刚烷除去2个氢原子获得的基团以外）。 B是可以具有取代基的≥1C二价烃基; 并且R 2 是酸解离的溶解抑制基团。在通式（a0-1）中，R 1是氢原子，低级烷基或卤代低级烷基; A是可以具有取代基（除了氧原子（= O））以外的≥2C的二价烃基（除了从金刚烷除去2个氢原子获得的基团以外）。 B是可以具有取代基的≥1C二价烃基; 并且R 2 是酸解离的溶解抑制基团。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012220572A Resist composition for negative development and method for forming resist pattern 有权
标题翻译：负面发展的阻力组成和形成耐力图的方法
公开(公告)号：JP2012220572A
公开(公告)日：2012-11-12
申请号：JP2011083799
申请日：2011-04-05
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： UTSUMI YOSHIYUKI , SHIMIZU HIROAKI
IPC分类号： G03F7/039 , C08F20/26 , G03F7/004 , G03F7/038 , H01L21/027
CPC分类号： G03F7/325 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a resist composition for negative development, the composition excellent in lithographic characteristics, and to provide a method for forming a resist pattern using the resist composition for negative development.SOLUTION: The resist composition is used for a method for forming a resist pattern including the steps of: forming a resist film on a supporter by using a resist composition including a base component (A) whose solubility in an organic solvent decreases by an action of an acid and an acid generator component (B) that generates an acid by exposure; exposing the resist film; and forming a resist pattern by patterning the resist film by negative development using a developing solution containing the above organic solvent. The acid generator component (B) includes an acid generator (B1) that generates an acid having a logP value of 2.7 or lower and pKa of -3.5 or higher.
摘要翻译：要解决的问题：提供一种用于负显影的抗蚀剂组合物，具有优异的光刻特性的组合物，并提供使用该抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：抗蚀剂组合物用于形成抗蚀剂图案的方法，包括以下步骤：通过使用包含其在有机溶剂中的溶解度降低的基础组分（A）的抗蚀剂组合物在载体上形成抗蚀剂膜通过暴露产生酸的酸和酸发生剂组分（B）的作用; 曝光抗蚀膜; 以及通过使用含有上述有机溶剂的显影液通过负显影图案化抗蚀剂膜来形成抗蚀剂图案。酸产生剂组分（B）包括酸产生剂（B1），其产生logP值为2.7或更低，pKa为-3.5或更高的酸。版权所有（C）2013，JPO＆INPIT

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