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91. 发明授权

US08178884B2 Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same 有权
标题翻译：包括化合物半导体氧化物的薄膜晶体管，其制造方法和具有该半导体氧化物的平板显示装置
公开(公告)号：US08178884B2
公开(公告)日：2012-05-15
申请号：US12393422
申请日：2009-02-26
申请人： Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
发明人： Jae-Heung Ha , Young-Woo Song , Jong-Hyuk Lee , Jong-Han Jeong , Min-Kyu Kim , Yeon-Gon Mo , Jae-Kyeong Jeong , Hyun-Joong Chung , Kwang-Suk Kim , Hui-Won Yang , Chaun-Gi Choi
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036 , H01L29/10 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L31/112 , H01L29/12 , H01L29/26 , H01L31/12 , H01L33/00 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7869
摘要： A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
摘要翻译：薄膜晶体管，薄膜晶体管的制造方法以及包括该薄膜晶体管的平板显示装置。薄膜晶体管包括：形成在基板上的栅电极; 形成在栅电极上的栅极绝缘膜; 形成在所述栅极绝缘膜上的活化层; 在活化层上形成包含化合物半导体氧化物的钝化层; 以及与激活层接触的源极和漏极。

92. 发明授权

US08174027B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08174027B2
公开(公告)日：2012-05-08
申请号：US12575778
申请日：2009-10-08
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L23/04
CPC分类号： H01L33/486 , H01L33/44 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.
摘要翻译：一种半导体发光器件，包括：包括第一主表面和第二主表面的基板，所述第一主表面包括凹部和突起，所述第二主表面形成在与所述第一主表面相对的一侧上; 设置在所述第一主表面上的第一电极; 半导体发光元件，设置在所述第一电极上并电连接到所述第一电极; 设置在所述第二主表面上的第二电极; 以及设置成在所述凹部处穿过所述基板并且电连接所述第一电极和所述第二电极的贯通电极。

93. 发明授权

US08164103B2 Multiple circuit power supply interface for light-emitting-diode color mixing 有权
标题翻译：多电路电源接口用于发光二极管混色
公开(公告)号：US08164103B2
公开(公告)日：2012-04-24
申请号：US12632450
申请日：2009-12-07
申请人： Shih-Chien Chen
发明人： Shih-Chien Chen
IPC分类号： H01L29/26
CPC分类号： F21V23/04 , F21V29/71 , F21V29/763 , F21V29/773 , F21Y2113/13 , F21Y2115/10 , H05B33/0803
摘要： The present invention discloses an light emitting diode (LED) light source and an interface for providing power to the LED. The LED light source includes an LED unit and a second coupling unit. The LED unit includes a base, one or more LED, and a first coupling unit. The LED are attached to the base. The joining of the first and second coupling units provides a mechanical support and electricity to the LED. The LED, are connected with independent circuit loops and controlled by controller to change the brightness of the LED. This structure allows the second coupling unit to be applied to any luminaries or replacement of a traditional light source, thus making the LED unit a universal LED light source for mass production and cost reduction. With the use of various types of LED and electric current control, modulation of brightness, color, and color temperature may be achieved.
摘要翻译：本发明公开了一种发光二极管（LED）光源和用于向LED提供电力的接口。 LED光源包括LED单元和第二耦合单元。 LED单元包括基座，一个或多个LED和第一耦合单元。 LED连接到基座。第一和第二耦合单元的接合为LED提供机械支撑和电力。 LED与独立的电路回路连接，由控制器控制，以改变LED的亮度。这种结构允许将第二耦合单元施加到任何发光体或替代传统光源，从而使得LED单元成为用于批量生产和降低成本的通用LED光源。通过使用各种类型的LED和电流控制，可以实现亮度，颜色和色温的调制。

94. 发明授权

US08148734B2 Light emitting device having a lateral passivation layer 有权
标题翻译：具有侧面钝化层的发光器件
公开(公告)号：US08148734B2
公开(公告)日：2012-04-03
申请号：US13241984
申请日：2011-09-23
申请人： Sun Kyung Kim
发明人： Sun Kyung Kim
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/22 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/44 , H01L33/22 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer.
摘要翻译：提供了一种发光器件，发光器件封装和照明系统。发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构，以及保护表面的钝化层的发光结构。钝化层包括在发光结构的顶表面上的第一钝化层和具有不同于第一钝化层的折射率的第二钝化层，第二钝化层设置在发光结构的侧表面上。第二钝化层的折射率大于第一钝化层的折射率。

95. 发明授权

US08148722B2 Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer 有权
标题翻译：使用原子层沉积制造P型ZnO半导体层的方法和包括P型ZnO半导体层的薄膜晶体管
公开(公告)号：US08148722B2
公开(公告)日：2012-04-03
申请号：US12967538
申请日：2010-12-14
申请人： Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Jeong Ik Lee
发明人： Sang Hee Park , Chi Sun Hwang , Hye Yong Chu , Jeong Ik Lee
IPC分类号： H01L27/15 , H01L29/26 , H01L29/10 , H01L33/00 , H01L31/12
CPC分类号： H01L29/7869 , C23C16/308 , C23C16/34 , C23C16/407 , C23C16/45529 , C30B25/02 , C30B29/16 , H01L21/02554 , H01L21/02579 , H01L21/0262
摘要： Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.
摘要翻译：提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管（TFT）之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。该方法包括以下步骤：准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中，并且使用原子层沉积（ALD）技术在Zn前体和氧前体之间引起表面化学反应，以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中，并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

96. 发明授权

US08101965B2 III-nitride semiconductor light emitting device having a multilayered pad 失效
标题翻译：具有多层衬垫的III族氮化物半导体发光器件
公开(公告)号：US08101965B2
公开(公告)日：2012-01-24
申请号：US12648707
申请日：2009-12-29
申请人： Chang Tae Kim , Hyun Su An , Hyun Suk Kim
发明人： Chang Tae Kim , Hyun Su An , Hyun Suk Kim
IPC分类号： H01L29/22 , H01L33/00 , H01L29/24 , H01L27/15 , H01L29/18 , H01L31/12 , H01L29/26 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/44
摘要： The present disclosure relates to a III-nitride semiconductor light-emitting device including: a plurality of III-nitride semiconductor layers having a first III-nitride semiconductor layer having a first conductivity type, a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of III-nitride semiconductor layers; a protection film disposed over the bonding pad; and a buffer pad disposed between the bonding pad and the protection film and formed to expose the bonding pad.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，其包括：多个具有第一导电类型的第一III族氮化物半导体层的III族氮化物半导体层，具有第二导电类型的第二III族氮化物半导体层不同于第一导电类型的有源层，以及设置在第一III族氮化物半导体层和第二III族氮化物半导体层之间并通过电子和空穴的复合产生光的有源层; 电连接到所述多个III族氮化物半导体层的焊盘; 设置在所述接合焊盘上的保护膜; 以及设置在所述接合焊盘和所述保护膜之间并且被形成为暴露所述接合焊盘的缓冲焊盘。

97. 发明授权

US08068157B2 Image sensor with wide operating range 有权
标题翻译：图像传感器，工作范围宽
公开(公告)号：US08068157B2
公开(公告)日：2011-11-29
申请号：US12218287
申请日：2008-07-14
申请人： Sang-Il Jung , Min-Young Jung
发明人： Sang-Il Jung , Min-Young Jung
IPC分类号： H04N3/14 , H01L27/92 , H01L29/26 , H01L29/02
CPC分类号： H04N5/357 , H01L27/14609 , H01L27/14689 , H04N5/374
摘要： An image sensor includes a photoelectric converter, a source-follower transistor, and a selection transistor. The photoelectric converter generates electric charge in response to received light, and the electric charge varies a voltage of a detection node. The source-follower transistor is coupled between the detection node and an output node and has a first threshold voltage. The selection transistor is coupled between the source-follower transistor and a voltage node with a power supply voltage or a boosted voltage applied thereon, and has a second threshold voltage with a magnitude that is less than a magnitude of the first threshold voltage such that the source-follower transistor operates in saturation.
摘要翻译：图像传感器包括光电转换器，源极跟随器晶体管和选择晶体管。光电转换器响应于接收到的光而产生电荷，电荷改变检测节点的电压。源极 - 跟随器晶体管耦合在检测节点和输出节点之间并且具有第一阈值电压。选择晶体管被耦合在源极跟随器晶体管和具有施加在其上的电源电压或升压电压的电压节点之间，并且具有小于第一阈值电压的幅度的幅度的第二阈值电压，使得源极跟随器晶体管工作在饱和状态。

98. 发明授权

US08044382B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08044382B2
公开(公告)日：2011-10-25
申请号：US12601794
申请日：2008-03-26
申请人： Shin Yokoyama , Yoshiteru Amemiya
发明人： Shin Yokoyama , Yoshiteru Amemiya
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L21/331 , H01L21/00
CPC分类号： H01L33/26 , H01L33/06 , H01L33/08 , Y10S438/962 , Y10S977/72 , Y10S977/721 , Y10S977/774
摘要： A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).
摘要翻译：发光装置包括n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）。在n型硅薄膜（2）上形成硅薄膜（3），在硅薄膜（3）上形成p型硅薄膜（4）。 n型硅薄膜（2），硅薄膜（3）和p型硅薄膜（4）形成pin结。 n型硅薄膜（2）包括由n型Si构成的多个量子点（21）。硅薄膜（3）包括由p型Si构成的多个量子点（31）。 p型硅薄膜（4）包括由p型Si构成的多个量子点（41）。从n型硅薄膜（2）侧注入电子，从p型硅薄膜（4）侧注入空穴，在氮化硅膜（3）发光。

99. 发明申请

US20110227068A1 METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE COMPRISING WIDE BANDGAP SEMICONDUCTOR LAYER 有权
标题翻译：制造包含宽带束半导体层的复合基板的方法
公开(公告)号：US20110227068A1
公开(公告)日：2011-09-22
申请号：US13130627
申请日：2009-12-10
申请人： Shoji Akiyama
发明人： Shoji Akiyama
IPC分类号： H01L29/161 , H01L21/30 , H01L29/20 , H01L29/26
CPC分类号： H01L21/76254
摘要： Provided is a method for manufacturing a low-cost bonded wafer (8) which allows bulk crystals of a wide bandgap semiconductor (1) to be transferred onto a handle substrate (3) as thinly as possible without breaking the substrate. More specifically, provided is a method for manufacturing a bonded wafer (8) by forming a wide bandgap semiconductor film (4) on a surface of a handle substrate (3), the method comprising a step of implanting ions from a surface (5) of a wide bandgap semiconductor substrate (1) having a bandgap of 2.8 eV or more to form an ion-implanted layer (2), a step of applying a surface activation treatment to at least one of the surface of the handle substrate (3) and the ion-implanted surface (5) of the wide bandgap semiconductor substrate (1), a step of bonding the surface (5) of the wide bandgap semiconductor substrate (1) and the surface of the handle substrate (3) to obtain bonded substrates (6), a step of applying a heat treatment to the bonded substrates (6) at a temperature of 150° C. or more and 400° C. less, and a step of subjecting the ion-implanted layer (2) of the wide bandgap semiconductor substrate (1) to irradiation of visible light from the semiconductor substrate (1) side of the bonded substrates (6) to embrittle an interface of the ion-implanted layer (2) and transfer the wide bandgap semiconductor film (4) onto the handle substrate (3).
摘要翻译：提供一种制造低成本接合晶片（8）的方法，其允许宽带隙半导体（1）的体晶尽可能薄地转印到手柄基板（3）上而不破坏基板。更具体地，提供了一种通过在手柄基板（3）的表面上形成宽带隙半导体膜（4）来制造接合晶片（8）的方法，该方法包括从表面（5）注入离子的步骤，具有2.8eV或更大的带隙的宽带隙半导体衬底（1）以形成离子注入层（2）;对手柄衬底（3）的表面中的至少一个施加表面活化处理的步骤，和宽带隙半导体衬底（1）的离子注入表面（5），将宽带隙半导体衬底（1）的表面（5）和手柄衬底（3）的表面接合以获得键合的步骤基板（6），在150℃以上且400℃以下的温度下对接合基板（6）进行热处理的步骤较少，以及将离子注入层（2）宽带隙半导体衬底（1）照射来自半导体衬底（1）侧的可见光所述粘合基板（6）使所述离子注入层（2）的界面脆化，并将所述宽带隙半导体膜（4）转移到所述手柄基板（3）上。

100. 发明授权

US08004003B2 Light emitting device having light extraction structure 有权
标题翻译：具有光提取结构的发光器件
公开(公告)号：US08004003B2
公开(公告)日：2011-08-23
申请号：US12816258
申请日：2010-06-15
申请人： Sun Kyung Kim
发明人： Sun Kyung Kim
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/20 , H01L33/44 , H01L33/50 , H01L33/505 , H01L33/58 , H01L2933/0083
摘要： A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.
摘要翻译：具有能够提高光提取效率和可靠性的具有光提取结构的发光器件及其制造方法。发光器件包括具有包括发光层的多层结构的半导体层; 以及以具有单位结构的图案形成在所述半导体层上的光提取结构。此外，每个单元结构的壁与平行于发光器件的主发光方向的虚拟垂直线成-45°至+45°的角度倾斜。

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