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11. 发明授权

US08970191B1 On/off time modulation for constant on-time and constant off-time switching regulators 有权
标题翻译：用于恒定导通时间和恒定关断时间开关调节器的开/关时间调制
公开(公告)号：US08970191B1
公开(公告)日：2015-03-03
申请号：US12658021
申请日：2010-02-01
申请人： Lik-Kin Wong , Issac Kuan-Chun Hsu , Tze-Kau Man
发明人： Lik-Kin Wong , Issac Kuan-Chun Hsu , Tze-Kau Man
IPC分类号： G05F1/00
CPC分类号： H02M3/156 , H02M1/44
摘要： An apparatus includes a constant on-time or constant off-time (COT) switching regulator configured to generate an output signal. The switching regulator includes a switch that is turned on or off for a specified amount of time during each of multiple switching cycles. The apparatus also includes a modulator configured to modulate the specified amount of time that the switch is turned on or off during at least some of the switching cycles. The specified amount of time that the switch is turned on or off during each of the switching cycles could be equal to tON/OFF+ΔtMODF(ωMOD), where tON/OFF denotes a constant amount of time, ΔtMOD denotes an amplitude of the second signal, ωMOD denotes a frequency of the second signal, and F( ) denotes a modulation function. This could help to modulate switching noise over a range of frequencies and spread electro-magnetic interference generated by the switching regulator.
摘要翻译：一种装置包括经配置以产生输出信号的恒定导通时间或恒定关断时间（COT）开关调节器。开关调节器包括在多个开关周期中的每一个期间接通或断开指定时间量的开关。该装置还包括调制器，其配置成在至少一些开关周期期间调制开关导通或关断的指定时间量。在每个开关周期期间开关导通或关断的指定时间量可以等于tON / OFF +＆Dgr; tMODF（ωMOD），其中tON / OFF表示恒定的时间量，Dgr; tMOD表示第二信号的幅度ωMOD表示第二信号的频率，F（）表示调制函数。这可以帮助调制频率范围内的开关噪声，并扩展由开关调节器产生的电磁干扰。

12. 发明授权

US08901875B2 Bi-directional wireless charger 有权
标题翻译：双向无线充电器
公开(公告)号：US08901875B2
公开(公告)日：2014-12-02
申请号：US13044186
申请日：2011-03-09
申请人： James E. Schuessler
发明人： James E. Schuessler
IPC分类号： H01M10/44 , H01M10/46 , H02J5/00 , H02J7/02 , H02J17/00
CPC分类号： H02J7/02 , G01R31/3689 , H01M10/46 , H02J5/005 , H02J7/025 , H02J7/35 , H02J17/00 , H02J50/10 , H02J50/12 , H02J50/40 , H02J50/80
摘要： A bi-directional charging device includes a rechargeable battery, a coil coupled to the rechargeable battery, a selection mechanism that selectively causes power to be delivered from the coil to the battery and selectively causes power to be delivered from the battery to the coil, and a control mechanism. Upon determining that the coil is to provide power to the battery, the control mechanism causes the selection mechanism to selectively cause power to be delivered from the coil to the battery, and upon determining that the coil is to receive power from the battery, the control mechanism causes the selection mechanism to selectively cause power to be delivered from the battery to the coil.The bi-directional charging device includes a housing enclosing the rechargeable battery, the coil, the selection mechanism, and the control mechanism.
摘要翻译：双向充电装置包括可再充电电池，耦合到可再充电电池的线圈，选择机构，其选择性地使电力从线圈传送到电池并且选择性地使电力从电池传送到线圈;以及一个控制机制。在确定线圈要向电池供电时，控制机构使得选择机构选择性地使电力从线圈传送到电池，并且在确定线圈要从电池接收电力时，控制器机构使选择机构选择性地使电力从电池传送到线圈。双向充电装置包括封装可再充电电池，线圈，选择机构和控制机构的外壳。

13. 发明授权

US08884676B2 Clock generator with duty cycle control and method 有权
标题翻译：具有占空比控制和方法的时钟发生器
公开(公告)号：US08884676B2
公开(公告)日：2014-11-11
申请号：US13215774
申请日：2011-08-23
申请人： Kern Wai Wong
发明人： Kern Wai Wong
IPC分类号： G01R29/02 , H03K9/08 , H03K3/017 , H03K5/04 , H03K7/08 , G06F1/04 , H03K3/00
CPC分类号： H03K3/017
摘要： A clock generator circuit for producing a clock output having a controlled duty cycle is disclosed. A bi-stable circuit provides the clock output which is switchable to a first state in response to an edge of the input clock signal and to a second state in response to a feedback signal. A duty cycle detection circuit is configured to source a current to a node and to sink a current from the node depending upon the output clock state. A capacitor is connected to receive a duty cycle current relating to the current at the node, with a comparator circuit being configured to sense a voltage on the capacitor and to produce the feedback signal when the voltage is at a selected level.
摘要翻译：公开了一种用于产生具有受控占空比的时钟输出的时钟发生器电路。双稳态电路提供时钟输出，该时钟输出响应于输入时钟信号的边沿而可切换到第一状态，并响应于反馈信号而提供到第二状态。占空比检测电路被配置为根据输出时钟状态将电流发送到节点并从节点吸收电流。连接电容器以接收与节点处的电流相关的占空比电流，比较器电路被配置为感测电容器上的电压并且当电压处于选定电平时产生反馈信号。

14. 发明授权

US08884629B1 Background sensor diagnostic for multi-channel ADC 有权
标题翻译：背景传感器诊断多通道ADC
公开(公告)号：US08884629B1
公开(公告)日：2014-11-11
申请号：US13103894
申请日：2011-05-09
申请人： D V J Ravi Kumar , Theertham Srinivas , Gururaj Ghorpade
发明人： D V J Ravi Kumar , Theertham Srinivas , Gururaj Ghorpade
IPC分类号： G01R31/02 , H03M1/10 , H03M1/12
CPC分类号： G01R31/024 , H03F1/0277 , H03F3/38 , H03F3/393 , H03F3/45183 , H03F3/45192 , H03F3/45695 , H03F3/72 , H03F2200/261 , H03F2200/331 , H03F2200/411 , H03F2200/78 , H03F2203/45366 , H03F2203/45396 , H03F2203/45614 , H03F2203/45616 , H03F2203/45644 , H03F2203/45726 , H03F2203/7221 , H03F2203/7236 , H03M1/1004 , H03M1/122
摘要： A digital sensing device includes a sensor diagnostic system for detecting sensor fault conditions. The sensor diagnostic system including an input multiplexer applying a first burnout current or a second burnout current to a selected input channel and a near-rail detector configured to detect when an input voltage of the digital sensing device is near a positive power supply or near a negative power supply. The burnout current injection is applied without interfering with the sensor data. In other embodiments, the sensor diagnostic system may further include an overload detector configured to detect an overflow or underflow condition at the analog-to-digital converter. The sensor diagnostic system may further include a window comparator to detect when the ADC digital output is near a zero digital value. Finally, the sensor diagnostic system may further include a sensor flag generator to generate data flags indicative of sensor fault conditions.
摘要翻译：数字感测装置包括用于检测传感器故障状况的传感器诊断系统。所述传感器诊断系统包括对所选择的输入通道施加第一烧坏电流或第二烧坏电流的输入多路复用器和配置成检测所述数字感测装置的输入电压何时靠近正电源或接近正电源的近轨检测器负电源。在不干扰传感器数据的情况下施加烧断电流注入。在其他实施例中，传感器诊断系统还可以包括被配置为检测模数转换器处的溢出或下溢条件的过载检测器。传感器诊断系统还可以包括窗口比较器，用于检测ADC数字输出何时接近零数字值。最后，传感器诊断系统还可以包括传感器标志发生器，以产生指示传感器故障状况的数据标志。

15. 发明授权

US08884465B2 System and method for over-voltage protection in a photovoltaic system 有权
标题翻译：光伏系统中过电压保护的系统和方法
公开(公告)号：US08884465B2
公开(公告)日：2014-11-11
申请号：US12762134
申请日：2010-04-16
申请人： Sameh Sarhan
发明人： Sameh Sarhan
IPC分类号： H02J1/00 , H02J3/00 , H02H7/00 , H02H9/00 , H02M1/32
CPC分类号： H02M1/32 , Y02E10/56 , Y10T307/685 , Y10T307/707
摘要： A photovoltaic array for use in an electrical power system includes multiple photovoltaic modules and a voltage converter coupled to at least one of the photovoltaic modules. The photovoltaic array also includes an over-voltage protection circuit. The over-voltage protection circuit includes an interface adapted to couple to an output of the voltage converter. The over-voltage protection circuit also includes a spike detector configured to detect a voltage spike in an output voltage of the voltage converter. The over-voltage protection circuit further includes a voltage control module configured to regulate an output voltage slew rate of the voltage converter in response to an over-voltage signal received from the spike detector.
摘要翻译：用于电力系统的光伏阵列包括耦合到至少一个光伏模块的多个光伏模块和电压转换器。光伏阵列还包括过电压保护电路。过电压保护电路包括适于耦合到电压转换器的输出的接口。过电压保护电路还包括尖峰检测器，其被配置为检测电压转换器的输出电压中的电压尖峰。过电压保护电路还包括电压控制模块，其被配置为响应于从尖峰检测器接收的过电压信号来调节电压转换器的输出电压转换速率。

16. 发明授权

US08878295B2 DMOS transistor with a slanted super junction drift structure 有权
标题翻译：具有倾斜超结漂移结构的DMOS晶体管
公开(公告)号：US08878295B2
公开(公告)日：2014-11-04
申请号：US13086187
申请日：2011-04-13
申请人： Peter J. Hopper , Alexei Sadovnikov , William French , Erika Mazotti , Richard Wendell Foote, Jr. , Punit Bhola , Vladislav Vashchenko
发明人： Peter J. Hopper , Alexei Sadovnikov , William French , Erika Mazotti , Richard Wendell Foote, Jr. , Punit Bhola , Vladislav Vashchenko
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/0657 , H01L29/0696 , H01L29/0882 , H01L29/1095 , H01L29/41766 , H01L29/4236 , H01L29/66659 , H01L29/66712 , H01L29/66734 , H01L29/7809 , H01L29/7813 , H01L29/7835
摘要： A DMOS transistor with a lower on-state drain-to-source resistance and a higher breakdown voltage utilizes a slanted super junction drift structure that lies along the side wall of an opening with the drain region at the bottom of the opening and the source region near the top of the opening.
摘要翻译：具有较低导通状态漏极至源极电阻和较高击穿电压的DMOS晶体管利用沿开口侧壁设置的倾斜超结漂移结构，漏极区位于开口底部和源极区靠近开口顶部。

17. 发明授权

US08810068B2 System and method for over-voltage protection of a photovoltaic system with distributed maximum power point tracking 有权
标题翻译：具有分布式最大功率点跟踪的光伏系统的过电压保护系统和方法
公开(公告)号：US08810068B2
公开(公告)日：2014-08-19
申请号：US12762148
申请日：2010-04-16
申请人： Gianpaolo Lisi , Ali Djabbari , Gerard Socci , Andrew Ronald Chemistruck , Rajaram Subramoniam , Jianhui Zhang , Kosha Mahmodieh
发明人： Gianpaolo Lisi , Ali Djabbari , Gerard Socci , Andrew Ronald Chemistruck , Rajaram Subramoniam , Jianhui Zhang , Kosha Mahmodieh
IPC分类号： H02J1/00
CPC分类号： H01L31/02021 , G05F1/67 , H02J3/385 , H02S50/00 , Y02E10/58 , Y10T307/707
摘要： A solar panel array for use in a solar cell power system is provided. The solar panel array includes a string of solar panels and multiple voltage converters. Each voltage converter is coupled to a corresponding solar panel in the string of solar panels. The solar panel array also includes multiple maximum power point tracking (MPPT) controllers. Each MPPT controller is coupled to a corresponding solar panel in the string of solar panels. Each MPPT controller is configured to sense an instantaneous power unbalance between the corresponding solar panel and an inverter.
摘要翻译：提供了一种用于太阳能电池电力系统的太阳能电池板阵列。太阳能电池板阵列包括一串太阳能电池板和多个电压转换器。每个电压转换器耦合到太阳能电池板组中的对应的太阳能电池板。太阳能电池板阵列还包括多个最大功率点跟踪（MPPT）控制器。每个MPPT控制器耦合到一串太阳能电池板中的对应的太阳能电池板。每个MPPT控制器被配置为感测对应的太阳能电池板和逆变器之间的瞬时功率不平衡。

18. 发明授权

US08785973B2 Ultra high voltage GaN ESD protection device 有权
标题翻译：超高压GaN ESD保护器件
公开(公告)号：US08785973B2
公开(公告)日：2014-07-22
申请号：US12799121
申请日：2010-04-19
申请人： Vladislav Vashchenko
发明人： Vladislav Vashchenko
IPC分类号： H01L29/20 , H01L21/335 , H01L29/778 , H01L27/02 , H01L29/861 , H01L29/205 , H01L29/06
CPC分类号： H01L29/861 , H01L27/0248 , H01L29/0657 , H01L29/2003 , H01L29/205
摘要： In an ultra high voltage lateral GaN structure having a 2DEG region extending between two terminals, an isolation region is provided between the two terminals to provide for reversible snapback.
摘要翻译：在具有在两个端子之间延伸的2DEG区域的超高电压横向GaN结构中，在两个端子之间提供隔离区域以提供可逆的快速恢复。

19. 发明授权

US08766612B2 Error amplifier with built-in over voltage protection for switched-mode power supply controller 有权
标题翻译：带开关电源控制器的内置过压保护误差放大器
公开(公告)号：US08766612B2
公开(公告)日：2014-07-01
申请号：US13082138
申请日：2011-04-07
申请人： Tawen Mei , Zheng Li
发明人： Tawen Mei , Zheng Li
IPC分类号： G05F1/575
CPC分类号： H02M3/156
摘要： An error amplifier includes a first amplification circuit with a reference signal input and a feedback signal input representing the amplitude of a load voltage of a switched mode power supply. The error amplifier includes a difference amplifier providing a difference signal representing a difference between the reference signal and the feedback signal, provided for determining the duty cycle of a switching signal in the switched mode power supply. The first amplification circuit further includes a control circuit providing a control signal generated as a function of the difference between the reference signal and the feedback signal.The error amplifier also includes a second amplification circuit, included in a compensation circuit. The second amplification circuit receives the control signal, and the operating current of the second amplification circuit is adjusted by an amount indicated by the control signal.
摘要翻译：误差放大器包括具有参考信号输入的第一放大电路和表示开关模式电源的负载电压的振幅的反馈信号输入。误差放大器包括差分放大器，其提供表示参考信号和反馈信号之间的差的差信号，用于确定开关模式电源中的开关信号的占空比。第一放大电路还包括提供作为参考信号和反馈信号之间的差的函数而产生的控制信号的控制电路。误差放大器还包括包括在补偿电路中的第二放大电路。第二放大电路接收控制信号，并且将第二放大电路的工作电流调整为由控制信号指示的量。

20. 发明授权

US08765534B2 Method for improved mobility using hybrid orientation technology (HOT) in conjunction with selective epitaxy and related apparatus 有权
标题翻译：使用混合取向技术（HOT）与选择性外延和相关设备相结合的改进移动性的方法
公开(公告)号：US08765534B2
公开(公告)日：2014-07-01
申请号：US13762656
申请日：2013-02-08
申请人： National Semiconductor Corporation
发明人： Alexander H. Owens
IPC分类号： H01L21/8238 , H01L21/84 , H01L21/762
CPC分类号： H01L21/84 , H01L21/76283 , H01L21/823807 , H01L21/823878 , H01L29/045 , H01L29/1054
摘要： A semiconductor apparatus includes a first substrate and a second substrate located over a first portion of the first substrate and separated from the first substrate by a buried layer. The semiconductor apparatus also includes an epitaxial layer located over a second portion of the first substrate and isolated from the second substrate. The semiconductor apparatus further includes a first transistor formed at least partially in the second substrate and a second transistor formed at least partially in or over the epitaxial layer. The second substrate and the epitaxial layer have bulk properties with different electron and hole mobilities. At least one of the transistors is configured to receive one or more signals of at least about 5V. The first substrate could have a first crystalline orientation, and the second substrate could have a second crystalline orientation.
摘要翻译：半导体装置包括位于第一基板的第一部分上方的第一基板和第二基板，并且通过掩埋层与第一基板分离。半导体装置还包括位于第一衬底的第二部分上并与第二衬底隔离的外延层。半导体装置还包括至少部分地形成在第二衬底中的第一晶体管和至少部分地形成在外延层中或其上的第二晶体管。第二衬底和外延层具有不同电子和空穴迁移率的体特性。至少一个晶体管被配置为接收至少约5V的一个或多个信号。第一基底可以具有第一结晶取向，并且第二基底可以具有第二晶体取向。

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