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11. 发明申请

US20100061167A1 DATA OUTPUT CIRCUIT 有权
标题翻译：数据输出电路
公开(公告)号：US20100061167A1
公开(公告)日：2010-03-11
申请号：US12340882
申请日：2008-12-22
申请人： Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Ji Wang Lee , Jae Min Jang , Chang Kun Park
发明人： Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Ji Wang Lee , Jae Min Jang , Chang Kun Park
IPC分类号： G11C7/00 , G11C8/08
CPC分类号： G11C7/1051 , G11C7/02 , G11C7/04 , G11C7/1057 , G11C7/1066 , G11C7/1072 , G11C11/4093
摘要： A data output circuit includes a pre-driving block configured to receive input data, generate a plurality of pull-up signals and pull-down signals, and change enable times of the pull-up signals and the pull-down signals in response to a plurality of control signals, and a main driving block configured to generate output data in response to the pull-up signals and the pull-down signals.
摘要翻译：数据输出电路包括：预驱动块，被配置为接收输入数据，产生多个上拉信号和下拉信号，以及响应于一个上拉信号和下拉信号改变使能时间多个控制信号和主驱动块，被配置为响应于上拉信号和下拉信号而产生输出数据。

12. 发明申请

US20100054047A1 SEMICONDUCTOR MEMORY APPARATUS 有权
标题翻译：半导体存储器
公开(公告)号：US20100054047A1
公开(公告)日：2010-03-04
申请号：US12332298
申请日：2008-12-10
申请人： Ji-Wang Lee , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Jae-Min Jang , Chang-Kun Park
发明人： Ji-Wang Lee , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Jae-Min Jang , Chang-Kun Park
IPC分类号： G11C7/00 , G11C8/18
CPC分类号： G11C7/1078 , G11C5/063 , G11C7/02 , G11C7/1084 , G11C7/1093 , G11C29/02 , G11C29/022 , G11C29/023 , G11C29/028
摘要： A semiconductor memory apparatus includes a clock generator configured to generate an internal clock signal, an asynchronous data input buffer configured to buffer a data input signal through a data pad to output a buffered data signal, and a synchronous data input buffer configured to buffer the buffered data signal synchronously with the internal clock signal, wherein a length of a line, through which the internal clock signal is transmitted to the synchronous data input buffer, is configured to be substantially the same with a length of a line, through which the buffered data is transmitted to the synchronous data input buffer.
摘要翻译：一种半导体存储装置，包括被配置为产生内部时钟信号的时钟发生器，配置成通过数据焊盘缓冲数据输入信号以输出缓冲数据信号的异步数据输入缓冲器，以及被配置为缓冲缓冲的数据输入缓冲器数据信号与内部时钟信号同步，其中通过其将内部时钟信号发送到同步数据输入缓冲器的线路的长度被配置为与线路的长度基本相同，通过该线路的长度，缓冲的数据被发送到同步数据输入缓冲器。

13. 发明申请

US20100039142A1 INPUT BUFFER CIRCUIT OF SEMICONDUCTOR APPARATUS 有权
标题翻译：半导体器件的输入缓冲电路
公开(公告)号：US20100039142A1
公开(公告)日：2010-02-18
申请号：US12540496
申请日：2009-08-13
申请人： JI WANG LEE , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Jae Min Jang , Chang Kun Park
发明人： JI WANG LEE , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Jae Min Jang , Chang Kun Park
IPC分类号： H03K5/153
CPC分类号： H03K5/153
摘要： The input buffer circuit of a semiconductor apparatus includes a first buffering unit that that is activated by a voltage level difference between a first voltage terminal and a second voltage terminal, and generates a first compare signal and a second compare signal by comparing the voltage levels of reference voltage and an input signal; a control unit that controls the amount of current flowing between the second voltage terminal and a ground terminal by comparing the voltage levels of the reference voltage and the second compare signal; and a second buffering unit that generates an output signal by comparing the voltage levels of the input signal and the first compare signal.
摘要翻译：半导体装置的输入缓冲电路包括第一缓冲单元，其由第一电压端子和第二电压端子之间的电压电平差激活，并且通过比较第一电压电平和第二电压电平的电压电平来生成第一比较信号和第二比较信号参考电压和输入信号; 控制单元，其通过比较所述参考电压和所述第二比较信号的电压电平来控制在所述第二电压端子和接地端子之间流动的电流量; 以及第二缓冲单元，其通过比较输入信号和第一比较信号的电压电平来产生输出信号。

14. 发明申请

US20100039140A1 BUFFER CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS 失效
标题翻译：半导体存储器的缓冲电路
公开(公告)号：US20100039140A1
公开(公告)日：2010-02-18
申请号：US12494757
申请日：2009-06-30
申请人： Ji Wang Lee , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Jae Min Jang , Chang Kun Park
发明人： Ji Wang Lee , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Jae Min Jang , Chang Kun Park
IPC分类号： H03K19/0175
CPC分类号： H03K19/018521
摘要： A buffer circuit of a semiconductor memory apparatus includes a buffering section configured to increase or decrease a voltage level of an output node by comparing a voltage level of an input signal with a voltage level of a reference voltage. A voltage compensation section applies a voltage to the output node in proportion to a variation of the reference voltage when the level of the reference voltage is lower than a target level.
摘要翻译：半导体存储装置的缓冲电路包括：缓冲部，被配置为通过将输入信号的电压电平与参考电压的电压电平进行比较来增大或减小输出节点的电压电平。当参考电压的电平低于目标电平时，电压补偿部分与输出节点成比例地与参考电压的变化成比例。

15. 发明申请

US20100039099A1 POWER NOISE DETECTING DEVICE AND POWER NOISE CONTROL DEVICE USING THE SAME 失效
标题翻译：电力噪声检测装置和使用该电力噪声检测装置的电力噪声控制装置
公开(公告)号：US20100039099A1
公开(公告)日：2010-02-18
申请号：US12332294
申请日：2008-12-10
申请人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Hyung-Soo Kim , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： G01R19/22
CPC分类号： H03H1/0007 , H03K19/00346
摘要： A power noise detecting device includes a plurality of power lines, and a power noise detecting part configured to detect power noise by rectifying voltages of the plurality of power lines and converting the rectified voltages into effective voltages.
摘要翻译：电力噪声检测装置包括多个电力线，以及电力噪声检测部，被配置为通过整流多个电力线的电压并将整流电压转换为有效电压来检测电力噪声。

16. 发明申请

US20090278578A1 DELAY LOCKED LOOP CIRCUIT AND DELAY LOCKING METHOD 审中-公开
标题翻译：延迟锁定环路延迟锁定方法
公开(公告)号：US20090278578A1
公开(公告)日：2009-11-12
申请号：US12332295
申请日：2008-12-10
申请人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
发明人： Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang , Chang-Kun Park
IPC分类号： H03L7/06
CPC分类号： H03L7/0812 , H03L7/085
摘要： A delay locked loop circuit includes a phase detecting unit for detecting a phase difference between a reference clock signal and a feedback clock signal, and for producing a phase difference detection signal, a code generating unit for producing a digital code signal according to the phase difference detection signal, a control current generating unit for generating a control current using the digital code signal, and a current controlled delay line for producing the feedback clock signal by delaying the reference clock signal by a delay time varied by the control current.
摘要翻译：延迟锁定环电路包括：相位检测单元，用于检测参考时钟信号和反馈时钟信号之间的相位差，并产生相位差检测信号;代码产生单元，用于根据相位差产生数字码信号检测信号，用于使用数字代码信号产生控制电流的控制电流产生单元和用于通过将参考时钟信号延迟由控制电流变化的延迟时间来产生反馈时钟信号的电流控制延迟线。

17. 发明申请

US20090243667A1 OUTPUT DRIVING DEVICE 失效
标题翻译：输出驱动装置
公开(公告)号：US20090243667A1
公开(公告)日：2009-10-01
申请号：US12411893
申请日：2009-03-26
申请人： Chang-Kun Park , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang
发明人： Chang-Kun Park , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Ji-Wang Lee , Jae-Min Jang
IPC分类号： H03K3/00
CPC分类号： H03K19/0027 , H03K19/00323 , H03K2005/00123 , H03K2217/0018
摘要： An output driving device capable of improving a slew rate is provided. The output driving device includes a push-pull type driving unit configured with a pull-up PMOS transistor and a pull-down NMOS transistor, wherein body biases of the pull-up PMOS transistor and the pull-down NMOS transistor are controlled for control of a slew rate of an output signal of the driving unit.
摘要翻译：提供了能够提高转换速度的输出驱动装置。输出驱动装置包括配置有上拉PMOS晶体管和下拉式NMOS晶体管的推挽型驱动单元，其中上拉PMOS晶体管和下拉式NMOS晶体管的体偏置被控制以控制驱动单元的输出信号的转换速率。

18. 发明申请

US20090231006A1 DUTY CYCLE CORRECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS INCLUDING THE SAME 有权
标题翻译：占空比校正电路和半导体集成电路设备，包括它们
公开(公告)号：US20090231006A1
公开(公告)日：2009-09-17
申请号：US12331294
申请日：2008-12-09
申请人： Jae Min Jang , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Ji Wang Lee , Chang Kun Park
发明人： Jae Min Jang , Yong Ju Kim , Sung Woo Han , Hee Woong Song , Ic Su Oh , Hyung Soo Kim , Tae Jin Hwang , Hae Rang Choi , Ji Wang Lee , Chang Kun Park
IPC分类号： H03K5/04
CPC分类号： H03K5/1565 , H03K5/151 , H03K2005/00058
摘要： A duty cycle correction circuit includes a phase splitter configured to control a phase of a DLL clock signal to generate a rising clock signal and a falling clock signal, a clock delay unit configured to delay the rising clock signal and the falling clock signal in response to control signals to generate a delayed rising clock signal and a delayed falling clock signal, a duty ratio correction unit configured to generate a correction rising clock signal and a correction falling clock signal that toggle in response to an edge timing of the delayed rising clock signal and the delayed falling clock signal, and a delay control unit configured to detect duty cycles of the correction rising clock signal and the correction falling clock signal to generate the control signals.
摘要翻译：占空比校正电路包括：相位分离器，被配置为控制DLL时钟信号的相位以产生上升时钟信号和下降时钟信号;时钟延迟单元，被配置为响应于时钟信号延迟上升时钟信号和下降时钟信号控制信号以产生延迟的上升时钟信号和延迟的下降时钟信号，占空比校正单元，被配置为产生校正上升时钟信号和校正下降时钟信号，该时钟信号响应于延迟的上升时钟信号的边沿定时而触发，延迟下降时钟信号，以及延迟控制单元，被配置为检测校正上升时钟信号和校正下降时钟信号的占空比，以产生控制信号。

19. 发明申请

US20060035652A1 Short message service management system equipped with additional data transfer function 审中-公开
标题翻译：短消息服务管理系统配备附加数据传输功能
公开(公告)号：US20060035652A1
公开(公告)日：2006-02-16
申请号：US11144687
申请日：2005-06-06
申请人： Woong-Cheol Kim , Sung-Woo Han
发明人： Woong-Cheol Kim , Sung-Woo Han
IPC分类号： H04Q7/20
CPC分类号： H04W28/06 , H04W4/14
摘要： Disclosed is an SMS management system equipped with an additional data transfer function. The SMS management system includes a message transmission module, wherein the message transmission module includes: a capacity calculating unit for calculating the volume of the message content entered by the message input unit and calculating a residual capacity by deducting the volume from the maximum capacity of a short message; an additional data processing unit for attaching additional data to the short message within the limit of the residual capacity calculated by the capacity calculating unit; and a message transmission unit for transmitting the short message with the attached additional data processed by the additional data processing unit to the recipient's mobile station number entered by the number input unit.
摘要翻译：公开了配备有附加数据传送功能的SMS管理系统。 SMS管理系统包括消息传输模块，其中消息传输模块包括：容量计算单元，用于计算由消息输入单元输入的消息内容的容量，并通过从最大容量中扣除该容量来计算剩余容量短消息; 附加数据处理单元，用于在由容量计算单元计算的剩余容量的极限内，将附加数据附加到短消息; 以及消息发送单元，用于将由附加数据处理单元处理的附加附加数据的短消息发送到由号码输入单元输入的接收者的移动台号码。

20. 发明授权

US08339159B2 Input buffer circuit of semiconductor apparatus 有权
标题翻译：半导体装置的输入缓冲电路
公开(公告)号：US08339159B2
公开(公告)日：2012-12-25
申请号：US12540496
申请日：2009-08-13
申请人： Ji-Wang Lee , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Jae-Min Jang , Chang-Kun Park
发明人： Ji-Wang Lee , Yong-Ju Kim , Sung-Woo Han , Hee-Woong Song , Ic-Su Oh , Hyung-Soo Kim , Tae-Jin Hwang , Hae-Rang Choi , Jae-Min Jang , Chang-Kun Park
IPC分类号： H03K5/153
CPC分类号： H03K5/153
摘要： The input buffer circuit of a semiconductor apparatus includes a first buffering unit that that is activated by a voltage level difference between a first voltage terminal and a second voltage terminal, and generates a first compare signal and a second compare signal by comparing the voltage levels of reference voltage and an input signal; a control unit that controls the amount of current flowing between the second voltage terminal and a ground terminal by comparing the voltage levels of the reference voltage and the second compare signal; and a second buffering unit that generates an output signal by comparing the voltage levels of the input signal and the first compare signal.
摘要翻译：半导体装置的输入缓冲电路包括第一缓冲单元，其由第一电压端子和第二电压端子之间的电压电平差激活，并且通过比较第一电压电平和第二电压电平的电压电平来生成第一比较信号和第二比较信号参考电压和输入信号; 控制单元，其通过比较所述参考电压和所述第二比较信号的电压电平来控制在所述第二电压端子和接地端子之间流动的电流量; 以及第二缓冲单元，其通过比较输入信号和第一比较信号的电压电平来产生输出信号。

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