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11. 发明授权

US08728238B2 Crystal growth system and method for lead-contained compositions using batch auto-feeding 有权
标题翻译：使用分批自动喂养的含铅组合物的晶体生长系统和方法
公开(公告)号：US08728238B2
公开(公告)日：2014-05-20
申请号：US13957074
申请日：2013-08-01
申请人： Pengdi Han , Jian Tian
发明人： Pengdi Han , Jian Tian
IPC分类号： C30B35/00 , C30B13/28 , C30B15/30 , C30B11/00 , C30B13/00 , C30B21/04 , C30B28/08
CPC分类号： C30B11/006 , C30B11/001 , C30B11/002 , C30B11/003 , C30B11/007 , C30B11/02 , C30B11/04 , C30B11/08 , C30B11/14 , C30B29/30 , C30B29/32 , C30B35/00 , H01L41/1875 , Y10T117/10 , Y10T117/1008 , Y10T117/1024 , Y10T117/1076 , Y10T117/108 , Y10T117/1092
摘要： This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).
摘要翻译：本发明包括一种用于生长晶体的系统和方法，包括批自动送料机构。所提出的系统和方法通过控制在开环和闭环晶体生长过程中可操作的高温流动控制系统的生长速率来提供晶体生长过程中组分偏析效应的最小化。控制生长速率而没有相应损失可挥发元素的能力可以显着提高组合均匀性，从而提高晶体产率。这种生长系统和方法可以以生产规模操作，同时用于多个生长坩埚，以进一步降低制造成本，特别是对于具有挥发性组分的二元或三元体系的晶体材料，例如铅（Pb）和铟（在）。

12. 发明申请

US20140124963A1 SEMICONDUCTOR WAFERS RECRYSTALLIZED IN A PARTIALLY SURROUNDING THIN FILM CAPSULE 有权
标题翻译：半导体晶片在部分环绕薄膜中重新形成
公开(公告)号：US20140124963A1
公开(公告)日：2014-05-08
申请号：US14155546
申请日：2014-01-15
申请人： Massachusetts Institute of Technology
发明人： Emanuel M Sachs , James G. Serdy , Eerik T. Hantsoo
IPC分类号： C30B13/00 , H01L23/31 , H01L29/04
CPC分类号： C30B13/00 , C30B1/02 , C30B28/02 , C30B29/06 , H01L21/02532 , H01L21/02667 , H01L23/3171 , H01L29/04 , H01L2924/0002 , H01L2924/00
摘要： An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film, which contains and protects the silicon when recrystallized to create a larger grain structure. The capsule can be made by heating a wafer in the presence of oxygen, or steam, resulting in silicon dioxide on the outer surface, typically 1-2 microns. At least one support element supports the wafer at the time the capsule is provided and blocks only minimal surface area from contact with the film forming atmosphere. There may be a plurality of support elements, or a surface may provide such support. The capsule contains the molten material during recrystallization, and protects against impurities. Recrystallization may be in air. After recrystallization, the capsule is removed.
摘要翻译：原始晶片（通常为硅）具有期望的端部PV晶片的形式。原件可以通过快速凝固或CVD制成。它有小颗粒。它被封装在干净的薄膜中，其在再结晶时含有并保护硅以产生更大的晶粒结构。胶囊可以通过在氧气或蒸汽的存在下加热晶片来制造，从而在外表面上产生二氧化硅，通常为1-2微米。至少一个支撑元件在胶囊被提供时支撑晶片，并且仅阻挡与成膜气氛接触的最小表面积。可以存在多个支撑元件，或者表面可以提供这样的支撑。胶囊在再结晶期间含有熔融材料，防止杂质。重结晶可能在空气中。重结晶后，除去胶囊。

13. 发明授权

US08535442B2 Crystal growth system and method for lead-contained compositions using batch auto-feeding 有权
标题翻译：使用分批自动喂养的含铅组合物的晶体生长系统和方法
公开(公告)号：US08535442B2
公开(公告)日：2013-09-17
申请号：US12373080
申请日：2007-07-12
申请人： Pengdi Han , Jian Tian
发明人： Pengdi Han , Jian Tian
IPC分类号： C30B35/00 , C30B13/28 , C30B11/00 , C30B13/00 , C30B21/04 , C30B28/08
CPC分类号： C30B11/006 , C30B11/001 , C30B11/002 , C30B11/003 , C30B11/007 , C30B11/02 , C30B11/04 , C30B11/08 , C30B11/14 , C30B29/30 , C30B29/32 , C30B35/00 , H01L41/1875 , Y10T117/10 , Y10T117/1008 , Y10T117/1024 , Y10T117/1076 , Y10T117/108 , Y10T117/1092
摘要： This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).
摘要翻译：本发明包括一种用于生长晶体的系统和方法，包括批自动送料机构。所提出的系统和方法通过控制在开环和闭环晶体生长过程中可操作的高温流动控制系统的生长速率来提供晶体生长过程中组分偏析效应的最小化。控制生长速率而没有相应损失可挥发元素的能力可以显着提高组合均匀性，从而提高晶体产率。这种生长系统和方法可以以生产规模操作，同时用于多个生长坩埚，以进一步降低制造成本，特别是对于具有挥发性组分的二元或三元体系的晶体材料，例如铅（Pb）和铟（在）。

14. 发明授权

US08382895B2 Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program 有权
标题翻译：硅单晶制造方法，硅单晶，硅晶片，用于控制硅单晶的制造的装置和程序
公开(公告)号：US08382895B2
公开(公告)日：2013-02-26
申请号：US12307734
申请日：2007-09-27
申请人： Shinji Togawa , Toshiyuki Sato
发明人： Shinji Togawa , Toshiyuki Sato
IPC分类号： H01L21/322 , C30B15/14 , C30B11/00 , C30B13/00 , C30B21/04 , C30B28/08
CPC分类号： C30B13/12 , C30B29/06 , Y10T117/1008
摘要： A method of manufacturing a silicon monocrystal by FZ method, wherein a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material. While impurities whose conductivity type is the same as that of the raw material are supplied by a gas doping method, the raw material is recrystallized by an induction-heating coil for obtaining a product-monocrystal.
摘要翻译：使用通过FZ法制造硅单晶的方法，其中使用CZ法拉出的P型或N型硅晶体用作原料。虽然通过气体掺杂法提供导电类型与原料相同的杂质，但是原料通过用于获得产物单晶的感应加热线圈重结晶。

15. 发明授权

US08221544B2 Line scan sequential lateral solidification of thin films 有权
标题翻译：线扫描顺序横向固化薄膜
公开(公告)号：US08221544B2
公开(公告)日：2012-07-17
申请号：US11293655
申请日：2005-12-02
申请人： James S. Im , Paul C. Van Der Wilt
发明人： James S. Im , Paul C. Van Der Wilt
IPC分类号： C30B13/00
CPC分类号： H01L21/02686 , B23K26/0738 , C30B13/00 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02678 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a predetermined length and width, said width sufficient to prevent nucleation of solids in a portion of the thin film that is irradiated by the laser pulse, (c) irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone demonstrating a variation in width along its length to thereby define a maximum width (Wmax) and a minimum width (Wmin), wherein the first molten zone crystallizes upon cooling to form one or more laterally grown crystals, (d) laterally moving the film in the direction of lateral growth a distance that is greater than about one-half Wmax and less than Wmin; and (e) irradiating a second region of the film with a second laser pulse to form a second molten zone having a shape that is substantially the same as the shape of the first molten zone, wherein the second molten zone crystallizes upon cooling to form one or more laterally grown crystals that are elongations of the one or more crystals in the first region.
摘要翻译：通过（a）提供具有设置在其上的薄膜的基板，所述膜能够进行激光诱导熔化，（b）产生具有足以使膜在整个厚度上熔化的能量密度的激光脉冲序列来制备多晶膜在照射区域中，每个脉冲形成具有预定长度和宽度的线束，所述宽度足以防止由激光脉冲照射的薄膜部分中的固体成核，（c）照射第一区域具有第一激光脉冲以形成第一熔融区的第一熔融区，所述第一熔融区表现出沿其长度的宽度变化，从而限定最大宽度（Wmax）和最小宽度（Wmin），其中第一熔融区在冷却时结晶以形成一个或多个横向生长的晶体，（d）沿横向生长方向横向移动所述膜的距离大于约一半Wmax且小于Wmin; 和（e）用第二激光脉冲照射所述膜的第二区域以形成具有与所述第一熔融区域的形状基本相同的形状的第二熔融区域，其中所述第二熔融区域在冷却时结晶以形成一个或更多横向生长的晶体，其是第一区域中的一种或多种晶体的伸长率。

16. 发明授权

US07691200B2 Magnesium oxide single crystal and method for producing the same 有权
标题翻译：氧化镁单晶及其制造方法
公开(公告)号：US07691200B2
公开(公告)日：2010-04-06
申请号：US11909505
申请日：2006-03-24
申请人： Atsuo Toutsuka , Yoshifumi Kawaguchi , Masaaki Kunishige
发明人： Atsuo Toutsuka , Yoshifumi Kawaguchi , Masaaki Kunishige
IPC分类号： C30B13/00 , C30B21/04 , C30B28/08 , C21B11/10 , C21B13/12 , C01F5/02 , C01F5/14 , C04B35/00
CPC分类号： C30B29/16 , C23C14/081 , C30B11/003 , C30B23/066
摘要： Provided is a MgO single crystal for obtaining a magnesium oxide (MgO) single crystal deposition material which is prevented from splashing during the vapor deposition in, e.g., an electron beam deposition method without reducing the deposition rate, and for obtaining a MgO single crystal substrate which can form thereon, e.g., a superconductor thin film having excellent superconducting properties. A MgO single crystal having a calcium content of 150×10−6 to 1,000×10−6 kg/kg and a silicon content of 10×10−6 kg/kg or less, wherein the MgO single crystal has a variation of 30% or less in terms of a CV value in detected amounts of calcium fragment ions, as analyzed by TOF-SIMS with respect to the polished surface of the MgO single crystal. A MgO single crystal deposition material and a MgO single crystal substrate for forming a thin film obtained from the MgO single crystal.
摘要翻译：本发明提供一种用于获得氧化镁（MgO）单晶沉积材料的MgO单晶，其在例如电子束沉积方法中在气相沉积期间防止溅射而不降低沉积速率，并且获得MgO单晶衬底其可以在其上形成，例如具有优异超导性能的超导体薄膜。钙含量为150×10 -6〜1,000×10 -6 kg / kg，硅含量为10×10 -6 kg / kg以下的MgO单晶，其中，MgO单晶的变化率为30％根据TOF-SIMS相对于MgO单晶的抛光表面的分析，检测到的钙碎片离子量的CV值以下。一种MgO单晶沉积材料和用于形成由MgO单晶获得的薄膜的MgO单晶衬底。

17. 发明授权

US07645337B2 Systems and methods for creating crystallographic-orientation controlled poly-silicon films 失效
标题翻译：用于制造晶体取向控制的多晶硅膜的系统和方法
公开(公告)号：US07645337B2
公开(公告)日：2010-01-12
申请号：US10994205
申请日：2004-11-18
申请人： James S. Im , Paul Christian van der Wilt
发明人： James S. Im , Paul Christian van der Wilt
IPC分类号： C30B13/00 , H01L21/20
CPC分类号： H01L21/02609 , C30B13/22 , C30B29/605 , H01L21/02532 , H01L21/02595 , H01L21/0268 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/04 , Y10S117/904 , Y10T117/10 , Y10T117/1004
摘要： In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.
摘要翻译：根据一个方面，本发明提供了一种用于提供具有受控微结构以及结晶织构的多晶膜的方法。该方法提供具有特定结晶取向的细长晶粒或单晶岛。特别地，在衬底上处理膜的方法包括产生具有主要以一个优选结晶方向取向的晶粒的织构化膜; 然后使用顺序侧向凝固结晶产生微结构，其提供以优选结晶取向取向的晶粒的位置控制生长。

18. 发明授权

US07585791B2 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07585791B2
公开(公告)日：2009-09-08
申请号：US10584729
申请日：2005-10-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , C30B13/00
CPC分类号： H01L21/02683 , B23K26/0736 , B23K26/0738 , B23K26/0853 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1255 , H01L27/1266 , H01L27/1285 , H01L27/1296 , H01L29/78621 , H01L29/78648 , Y10T117/1076
摘要： In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.
摘要翻译：在使用CW激光或准CW激光进行激光退火时，与准分子激光相比，生产率不高，因此有必要进一步提高生产率。根据本发明，使用基波而不将激光投射到非线性光学元件中，并且通过用具有高重复率的脉冲激光照射半导体薄膜来进行激光退火。具有高输出功率的激光振荡器可用于激光退火，因为不使用非线性光学元件，因此光不转换成谐波。因此，可以增加通过扫描一次形成的具有大晶粒的区域的宽度，从而可以显着提高生产率。

19. 发明授权

US07518187B2 Soi wafer and a method for producing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US07518187B2
公开(公告)日：2009-04-14
申请号：US10546693
申请日：2004-03-12
申请人： Masahiro Sakurada
发明人： Masahiro Sakurada
IPC分类号： C30B13/00 , H01L29/94 , H01L21/331
CPC分类号： C30B29/06 , C30B15/203 , H01L21/76243 , H01L21/76254
摘要： The present invention is an SOI wafer in which at least a silicon active layer is formed over a support substrate via an insulator film or on a support substrate directly, wherein, at least, the silicon active layer consists of a P(phosphorus)-doped silicon single crystal grown by Czochralski method, which is occupied by N region and/or defect-free I region, and contains Al (aluminum) with concentration of 2×1012 atoms/cc or more. There can be provided with ease and at low cost an SOI wafer with high electrical reliability in a device fabrication process, that has an excellent electric property without generation of micro pits by cleaning with hydrofluoric acid etc. even in the case of forming an extremely thin silicon active layer, or that retains high insulation property even in the case of forming an extremely thin inter-layer insulator film.
摘要翻译：本发明是一种SOI晶片，其中至少有一个硅有源层经由绝缘膜或直接在支撑衬底上形成在支撑衬底上，其中至少硅活性层由P（磷）掺杂通过Czochralski法生长的硅单晶，其被N区和/或无缺陷I区占据，并且含有浓度为2×10 12原子/ cc以上的Al（铝）。可以容易且廉价地提供在器件制造工艺中具有高电可靠性的SOI晶片，即使在形成非常薄的情况下也具有优异的电性能而不产生微凹坑，甚至通过用氢氟酸等清洗硅的有源层，即使在形成极薄的层间绝缘膜的情况下也能够保持高的绝缘性。

20. 发明申请

US20070209579A1 Apparatus for Producing Crystals 有权
标题翻译：用于生产晶体的装置
公开(公告)号：US20070209579A1
公开(公告)日：2007-09-13
申请号：US10589719
申请日：2005-11-16
申请人： Masahiro Sasaura , Hiroki Kohda , Kazuo Fujiura
发明人： Masahiro Sasaura , Hiroki Kohda , Kazuo Fujiura
IPC分类号： C30B11/00 , C30B13/00
CPC分类号： C30B29/30 , C30B11/002 , C30B11/003 , C30B29/32 , Y10T117/10 , Y10T117/1016 , Y10T117/1068 , Y10T117/1088
摘要： Highly-qualified crystals are grown with good yield under an optimal temperature condition by controlling the axial temperature distribution in the vicinity of the seed crystal locally. In an apparatus for producing crystals to grow crystals wherein a seed crystal 14 is placed in a crucible 11 which is retained in a furnace, raw materials 12 filled in the crucible 11 are heated and liquefied, and a raw material 12 slowly cooled in the crucible 11 from below upward, the apparatus including a temperature controller for controlling temperature to cool or heat the vicinity of the seed crystal 14 locally. The temperature controller controls the temperature by a hollow constructed cap 17 mounted outside the portion of crucible 11 and regulates refrigerant flow running through the hollow portion.
摘要翻译：通过局部控制籽晶附近的轴向温度分布，在最佳温度条件下生长出高质量的晶体。在晶体生长装置中，将晶种14放置在保持在炉中的坩埚11中，填充在坩埚11中的原料12被加热并液化，在坩埚中缓慢冷却的原料12 该装置包括用于控制温度以局部冷却或加热晶种14附近的温度控制器。温度控制器通过安装在坩埚11的外部的中空构造的盖17来控制温度，并且调节流过中空部分的制冷剂流。

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