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21. 发明授权

US07906772B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US07906772B2
公开(公告)日：2011-03-15
申请号：US11849632
申请日：2007-09-04
申请人： David Sargent , Jon Maimon
发明人： David Sargent , Jon Maimon
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/1293 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/148 , Y10T29/49155
摘要： A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. Also described is a method for making a memory or switching device. The method includes providing a first insulator and configuring the first insulator to provide a mesa. A first conductive layer is provided conforming to the mesa. A phase-change or switching material is provided over a portion of the first conductive layer, and a second conductive layer is provided over the phase-change or switching material.
摘要翻译：存储器或开关器件包括台面和符合所述台面的第一电极。该装置还包括设置在所述第一和第二电极之间的第二电极和相变或开关材料。相变或开关材料分别在第一接触区域和第二接触区域处与第一和第二电极电连通。还描述了一种用于制造存储器或开关装置的方法。该方法包括提供第一绝缘体并配置第一绝缘体以提供台面。提供符合台面的第一导电层。相变或开关材料设置在第一导电层的一部分上，并且第二导电层设置在相变或开关材料上。

22. 发明授权

US07808807B2 Method and apparatus for accessing a multi-mode programmable resistance memory 有权
标题翻译：用于访问多模式可编程电阻存储器的方法和装置
公开(公告)号：US07808807B2
公开(公告)日：2010-10-05
申请号：US12075665
申请日：2008-03-13
申请人： Ward Parkinson , Stefan Lai
发明人： Ward Parkinson , Stefan Lai
IPC分类号： G11C5/06
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C2211/5641
摘要： A memory is configurable among a plurality of operational modes and types of interfaces. The operational modes may dictate the number of storage levels to be associated with each cell within the memory's storage matrix. Individual operational modes may be matched to individual interfaces, operated one at a time or in parallel.
摘要翻译：存储器可在多种操作模式和类型的接口之间配置。操作模式可以指定与存储器存储矩阵内的每个单元相关联的存储级别的数量。各个操作模式可以与单个接口匹配，每次操作一个或一个并行操作。

23. 发明授权

US07803655B2 Method to manufacture a phase change memory 有权
标题翻译：制造相变存储器的方法
公开(公告)号：US07803655B2
公开(公告)日：2010-09-28
申请号：US11983188
申请日：2007-11-07
申请人： Brian G. Johnson , Charles H. Dennison
发明人： Brian G. Johnson , Charles H. Dennison
IPC分类号： H01L21/00
CPC分类号： G06F21/125 , G06F21/10 , H01L45/06 , H01L45/122 , H01L45/126 , H01L45/1293 , H01L45/144 , H01L45/1666
摘要： Briefly, in accordance with an embodiment of the invention, a method to manufacture a phase change memory is provided. The method may include forming a first electrode contacting the sidewall surface and the bottom surface of the phase change material. The method may further include forming a second electrode contacting the top surface of the phase change material.
摘要翻译：简而言之，根据本发明的实施例，提供了制造相变存储器的方法。该方法可以包括形成接触相变材料的侧壁表面和底表面的第一电极。该方法还可以包括形成接触相变材料的顶表面的第二电极。

24. 发明授权

US07778064B2 Accessing a phase change memory 有权
标题翻译：访问相变存储器
公开(公告)号：US07778064B2
公开(公告)日：2010-08-17
申请号：US11983098
申请日：2007-11-07
申请人： Ward Parkinson , Tyler Lowrey
发明人： Ward Parkinson , Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2213/79
摘要： A memory employs a low-level current source to access a phase change memory cell. The current source charges an access capacitor in order to store sufficient charge for an ensuing access. When a memory cell is accessed, charge stored on the capacitor is discharged through the phase change memory, supplying a current to the phase change memory cell that is sufficient for the intended access operation and greater than that provided directly by the current source.
摘要翻译：存储器采用低电平电流源来访问相变存储器单元。电流源为存取电容器充电以便为接下来的存取储存足够的电量。当访问存储器单元时，存储在电容器上的电荷通过相变存储器放电，向相变存储器单元提供足以用于预期访问操作的电流并且大于由电流源直接提供的电流。

25. 发明申请

US20100059729A1 Apparatus and method for memory 审中-公开
标题翻译：记忆装置和方法
公开(公告)号：US20100059729A1
公开(公告)日：2010-03-11
申请号：US12283113
申请日：2008-09-09
申请人： Stephen Hudgens
发明人： Stephen Hudgens
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/1233 , H01L45/144 , H01L45/165
摘要： A programmable resistance memory includes a volume of programmable resistance material formed between and coupled to two electrodes. The volume of programmable resistance material includes a region of enhanced programmability that is positioned to maximize the effect of a programming current. The region of enhanced programmability is positioned at a distance from regions of high thermal conductivity, such as areas in close proximity to electrodes.
摘要翻译：可编程电阻存储器包括在两个电极之间形成并耦合到两个电极的可编程电阻材料的体积。可编程电阻材料的体积包括增强可编程性的区域，其被定位成使编程电流的影响最大化。增强的可编程性区域位于与导热系数高的区域，例如靠近电极的区域。

26. 发明申请

US20090298222A1 Method for manufacturing Chalcogenide devices 审中-公开
标题翻译：制造硫族化物装置的方法
公开(公告)号：US20090298222A1
公开(公告)日：2009-12-03
申请号：US12154952
申请日：2008-05-28
申请人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
发明人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/04 , H01L45/144 , H01L45/1608
摘要： A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
摘要翻译：硫族化物器件形成的方法包括处理沉积硫族化物材料的表面。该处理减少或消除了表面的天然氧化物和其他污染物，从而增加了硫属化物层与处理过的表面的粘附性，消除了硫属化物层与沉积表面之间的空隙，并且由于污染物的迁移而降低了硫族化物材料的降解硫族化物。

27. 发明授权

US07596016B2 Optically accessible phase change memory 有权
标题翻译：光学可访问的相变存储器
公开(公告)号：US07596016B2
公开(公告)日：2009-09-29
申请号：US10634146
申请日：2003-08-04
申请人： Brian G. Johnson
发明人： Brian G. Johnson
IPC分类号： G11C11/00
CPC分类号： G11C13/04 , G11C13/0004
摘要： A phase change memory may be configured to enable both optical and electrical accessing of the memory. In one embodiment, each cell may be electrically accessed by a laser beam, and at the same time each cell may be electrically accessed by electrical addressing signals.
摘要翻译：相变存储器可以被配置为使能存储器的光学和电气存取。在一个实施例中，每个单元可以被激光束电接入，并且同时每个单元可以由电寻址信号电接入。

28. 发明授权

US07590918B2 Using a phase change memory as a high volume memory 有权
标题翻译：使用相变存储器作为高容量存储器
公开(公告)号：US07590918B2
公开(公告)日：2009-09-15
申请号：US10939273
申请日：2004-09-10
申请人： Ward D. Parkinson
发明人： Ward D. Parkinson
IPC分类号： H03M13/00
CPC分类号： G06F11/106 , G11C13/0004 , G11C2213/72 , G11C2213/79
摘要： A phase change memory may be utilized in place of more conventional, higher volume memories such as static random access memory, flash memory, or dynamic random access memory. To account for the fact that the phase change memory is not yet a high volume technology, an error correcting code may be incorporated. The error correcting code may be utilized in ways which do not severely negatively impact read access times, in some embodiments.
摘要翻译：可以使用相变存储器代替更传统的更高容量的存储器，例如静态随机存取存储器，闪速存储器或动态随机存取存储器。为了说明相变存储器还不是高容量技术的事实，可以并入纠错码。在一些实施例中，错误校正码可以以不严重不利地影响读访问时间的方式来使用。

29. 发明授权

US07570524B2 Circuitry for reading phase change memory cells having a clamping circuit 有权
标题翻译：用于读取具有钳位电路的相变存储单元的电路
公开(公告)号：US07570524B2
公开(公告)日：2009-08-04
申请号：US11093879
申请日：2005-03-30
申请人： Ferdinando Bedeschi , Claudio Resta
发明人： Ferdinando Bedeschi , Claudio Resta
IPC分类号： G11C7/08
CPC分类号： G11C13/0004 , G11C11/5678 , G11C13/004 , G11C2013/0054 , G11C2211/5645 , G11C2213/79
摘要： A read circuit for reading at least one memory cell adapted to storing a logic value, the at least one memory cell including: a storage element made of a phase-change material; and an access element for coupling the storage element to the read circuit in response to a selection of the memory cell, the read circuit including: a sense current supply arrangement for supplying a sense current to the at least one memory cell; and at least one sense amplifier for determining the logic value stored in the memory cell on the basis of a voltage developing thereacross, the at least one sense amplifier comprising a voltage limiting circuit for limiting the voltage across the memory cell for preserving the stored logic value, wherein the voltage limiting circuit includes a current sinker for sinking a clamping current, which is subtracted from the sense current and depends on the stored logic value.
摘要翻译：一种用于读取适于存储逻辑值的至少一个存储单元的读取电路，所述至少一个存储单元包括：由相变材料制成的存储元件; 以及用于响应于所述存储单元的选择将所述存储元件耦合到所述读取电路的访问元件，所述读取电路包括：用于向所述至少一个存储器单元提供感测电流的感测电流供应装置; 以及至少一个读出放大器，用于基于在其上形成的电压来确定存储在存储器单元中的逻辑值，所述至少一个读出放大器包括用于限制存储器单元两端的电压的电压限制电路，用于保存所存储的逻辑值其中所述电压限制电路包括用于吸收钳位电流的电流沉降片，其从所述感测电流中减去并且取决于所存储的逻辑值。

30. 发明申请

US20090166601A1 Non-volatile programmable variable resistance element 审中-公开
标题翻译：非易失性可编程可变电阻元件
公开(公告)号：US20090166601A1
公开(公告)日：2009-07-02
申请号：US12006390
申请日：2008-01-02
申请人： Wolodymyr Czubatyj , Guy Wicker
发明人： Wolodymyr Czubatyj , Guy Wicker
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/128 , H01L45/144
摘要： A phase-change memory element exhibits a non-uniform temperature profile in the phase-change material, resulting in a non-uniform temperature profile. The non-uniform temperature profile causes non-uniform growth of a programmed volume, resulting in a gradual R-I characteristic. The phase-change material may be a chalcogenide material.
摘要翻译：相变存储元件在相变材料中表现出不均匀的温度分布，导致不均匀的温度分布。不均匀的温度分布导致编程体积的不均匀生长，导致逐渐的R-I特性。相变材料可以是硫族化物材料。

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