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21. 发明授权

US09064548B2 Method for reading a third-dimensional embedded re-writeable non-volatile memory and registers 有权
标题翻译：用于读取第三维嵌入式可重写非易失性存储器和寄存器的方法
公开(公告)号：US09064548B2
公开(公告)日：2015-06-23
申请号：US13134713
申请日：2011-06-14
申请人： Robert Norman
发明人： Robert Norman
IPC分类号： G11C7/10 , G11C7/06 , G11C13/00 , G11C13/02
CPC分类号： G11C13/0069 , G11C5/04 , G11C7/062 , G11C13/004 , G11C13/02 , G11C2013/0054 , G11C2013/009 , G11C2207/063 , G11C2213/13 , G11C2213/71
摘要： A non-volatile register includes register logic connected with first and second ends of a memory element. The register logic is positioned below the memory element. The memory element may be a two-terminal memory element configured to store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the two terminals. New data can be written to the two-terminal memory element by applying a write voltage of a predetermined magnitude and/or polarity across the two terminals. The two-terminal memory element retains stored data in the absence of power. A reference element including a structure that is identical or substantially identical to the two-terminal memory element may be used to generate a reference signal for comparisons during read operations.
摘要翻译：非易失性寄存器包括与存储器元件的第一和第二端相连的寄存器逻辑。寄存器逻辑位于存储器元件下方。存储器元件可以是被配置为将数据存储为可以通过在两个端子上施加读取电压而被非破坏性地确定的多个导电率分布的两端存储器元件。通过在两个端子上施加预定幅度和/或极性的写入电压，可以将新数据写入到两端存储元件。两端存储器元件在没有电源的情况下保留存储的数据。可以使用包括与两端存储元件相同或基本相同的结构的参考元件来产生用于在读取操作期间进行比较的参考信号。

22. 发明授权

US09007808B1 Safeguarding data through an SMT process 有权
标题翻译：通过SMT流程保护数据
公开(公告)号：US09007808B1
公开(公告)日：2015-04-14
申请号：US13628385
申请日：2012-09-27
申请人： Adesto Technologies Corporation
发明人： John Dinh , Derric Lewis , Venkatesh P. Gopinath , Deepak Kamalanathan , Shane C. Hollmer , Juan Pablo Saenz Echeverry
IPC分类号： G11C11/00 , G11C13/00 , G11C11/406 , G11C13/02
CPC分类号： G11C13/0011 , G11C11/406 , G11C11/40603 , G11C11/40626 , G11C13/0009 , G11C13/0033 , G11C13/004 , G11C13/0069 , G11C13/02 , G11C2013/0083
摘要： Structures and methods for recovering data in a semiconductor memory device are disclosed herein. In one embodiment, a method of recovering data in a semiconductor memory device, can include: (i) pre-conditioning a first memory cell on the semiconductor memory device by using a formation voltage to program a first data state in the first memory cell; (ii) storing a second data state in a second memory cell on the semiconductor memory device by maintaining the second memory cell in a virgin state; (iii) mounting the semiconductor memory device on a printed-circuit board (PCB) by using a high temperature process that increases a resistance of the first memory cell; and (iv) performing a recovery of the first data state by reducing the resistance of the first memory cell.
摘要翻译：本文公开了用于在半导体存储器件中恢复数据的结构和方法。在一个实施例中，一种在半导体存储器件中恢复数据的方法可以包括：（i）通过使用地层电压对第一存储器单元中的第一数据状态进行编程来预调节半导体存储器件上的第一存储单元; （ii）通过将第二存储单元维持在处女状态，将第二数据状态存储在半导体存储器件上的第二存储单元中; （iii）通过使用增加第一存储单元的电阻的高温处理将半导体存储器件安装在印刷电路板（PCB）上; 和（iv）通过减小第一存储单元的电阻来执行第一数据状态的恢复。

23. 发明授权

US08835892B2 Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same 有权
标题翻译：包括具有氮化硼基衬垫的碳纳米管膜的电子器件及其形成方法
公开(公告)号：US08835892B2
公开(公告)日：2014-09-16
申请号：US12608592
申请日：2009-10-29
申请人： Wipul Pemsiri Jayasekara
发明人： Wipul Pemsiri Jayasekara
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24 , B82Y10/00 , H01L51/05 , H01L51/00 , G11C13/02
CPC分类号： H01L45/04 , B82Y10/00 , G11C13/025 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/149 , H01L45/1608 , H01L45/1616 , H01L45/1675 , H01L51/0048 , H01L51/0591
摘要： Methods in accordance with this invention form a microelectronic structure by forming a carbon nano-tube (“CNT”) layer, and forming a boron nitride layer (“BN liner”) above the CNT layer, wherein the BN liner comprises: (1) a first portion disposed above and in contact with the CNT layer; and/or (2) a second portion disposed in and/or around one or more carbon nano-tubes in the CNT layer. Numerous other aspects are provided.
摘要翻译：根据本发明的方法通过形成碳纳米管（“CNT”）层并在CNT层上形成氮化硼层（“BN衬垫”）形成微电子结构，其中BN衬垫包括：（1）设置在所述CNT层上方并与所述CNT层接触的第一部分; 和/或（2）设置在CNT层中的一个或多个碳纳米管中和/或周围的第二部分。提供了许多其他方面。

24. 发明授权

US08571835B2 Vibration powered impact recorder (VPIR) 有权
标题翻译：振动动力撞击记录仪（VPIR）
公开(公告)号：US08571835B2
公开(公告)日：2013-10-29
申请号：US12792372
申请日：2010-06-02
申请人： Reginald Conway Farrow , Gordon Albert Thomas
发明人： Reginald Conway Farrow , Gordon Albert Thomas
IPC分类号： G06F17/40 , G01N1/00 , G11C13/02
CPC分类号： G01P1/127 , G01P15/0891
摘要： A vibration-powered impact recording device that harvests power from vibrations that affect the device is provided. The recording device is affixed to an object and includes a vibration limit detection and recordation system. The system can include a suitable part that is fixed to the object, and a mass (or other suitable part) that is less firmly attached, with the relative motion between the two parts producing an electrical voltage. The electrical voltage can be used to power an information storage unit that records the details of the impact and optionally other sensors which record other parameters such as temperature, humidity etc. at the time of impact.
摘要翻译：提供了一种振动动力的冲击记录装置，其从影响装置的振动收集电力。记录装置固定在物体上并包括振动极限检测和记录系统。该系统可以包括固定到物体上的适当部件和不牢固地附接的质量（或其它合适的部件），两部分之间的相对运动产生电压。可以使用电压为记录冲击细节的信息存储单元供电，以及可能的其他记录其他参数（如温度，湿度等）的其他传感器的电源。

25. 发明申请

US20110286263A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20110286263A1
公开(公告)日：2011-11-24
申请号：US12672238
申请日：2008-08-05
申请人： Silvia Rosselli , Tzenka Miteva , Nikolaus Knorr , Gabriele Nelles , Akio Yasuda
发明人： Silvia Rosselli , Tzenka Miteva , Nikolaus Knorr , Gabriele Nelles , Akio Yasuda
IPC分类号： G11C13/02 , H01L51/10 , H01L21/66
CPC分类号： H01L51/0595 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/77
摘要： Memory device, comprising a storage material, a first electrode connected to the storage material; and a second electrode associated to the storage material.
摘要翻译：存储装置，包括存储材料，连接到存储材料的第一电极; 以及与存储材料相关联的第二电极。

26. 发明申请

US20090272269A1 Method and apparatus for electric treatment of substrates 失效
公开(公告)号：US20090272269A1
公开(公告)日：2009-11-05
申请号：US12455577
申请日：2009-06-03
申请人： William K. Leonard
发明人： William K. Leonard
IPC分类号： H01G7/02 , B29C59/10 , B03C3/28 , G11C13/02
CPC分类号： H01G7/02 , H01G7/021 , Y10S55/05 , Y10S55/39 , Y10S264/48 , Y10T29/49226 , Y10T442/2189 , Y10T442/2238
摘要： Methods and apparatus for hydrodischarging and hydrocharging substrates and articles to produce enhanced ability to avoid attraction of contaminants or improved capability of removing contaminants from fluids are disclosed. In another form the method involves removal of electric charges or neutralization of charge on or within substrates. Also disclosed are methods of making using electret substrates and articles for removing particulates and mists from fluid streams.

27. 发明授权

US07589439B2 Electromechanical transducer element, method for forming an electromechanical transducer element and transducer formed by said method 失效
标题翻译：机电换能器元件，用于形成机电换能器元件的方法和由所述方法形成的换能器
公开(公告)号：US07589439B2
公开(公告)日：2009-09-15
申请号：US10894417
申请日：2004-07-14
申请人： Heikki Raisanen
发明人： Heikki Raisanen
IPC分类号： G11C13/02
CPC分类号： H04R19/016
摘要： Electromechanical transducer element for converting mechanical force, such as vibrations, into electrical signals and a method for fabricating the same, the transducer having a layered structure and comprising: signal and ground layers (103-105, 107) and dielectric layer(s) (109, 110), the dielectric layers being permanently charged elastic cellular electret film layer(s), and wherein the transducer element is provided with additional material in order to improve the electric properties, and wherein in that the additional material (108, 106) is disposed in between the permanently charged elastic cellular electret film and at least one electrode of the element so that under compression the elastic electret film compresses most at the areas being directly against the additional material and less at the other areas of the element.
摘要翻译：用于将诸如振动的机械力转换为电信号的机电换能器元件及其制造方法，所述换能器具有分层结构，并包括：信号和接地层（103-105,107）和电介质层（电介质层是永久带电的弹性细胞驻极体膜层，并且其中换能器元件设置有附加材料以便改善电性能，并且其中，附加材料（108,106）设置在永久带电的弹性蜂窝驻极体膜和元件的至少一个电极之间，使得在压缩下，弹性驻极体膜在直接抵靠附加材料的区域处压缩最多，而在该元件的其它区域处则较小。

28. 发明授权

US07113321B2 Optical deflection apparatus and manufacturing method thereof, optical deflection array, imaging apparatus, and image projection display apparatus 有权
标题翻译：光学偏转装置及其制造方法，光学偏转阵列，成像装置和图像投影显示装置
公开(公告)号：US07113321B2
公开(公告)日：2006-09-26
申请号：US10822816
申请日：2004-04-13
申请人： Takeshi Nanjyo , Seiichi Katoh , Kouichi Ohtaka
发明人： Takeshi Nanjyo , Seiichi Katoh , Kouichi Ohtaka
IPC分类号： G02B26/00 , G02B26/08 , G11C13/02 , B23K11/24 , H01J43/00
CPC分类号： G02B26/0841 , Y10T307/74
摘要： A miniaturized and highly integrated optical deflection apparatus is realized in which the number of electrodes for driving the optical deflection apparatus is reduced. The optical deflection apparatus implements a sheet member that is electrically floating and plural electrodes that are implemented on a substrate. The sheet member includes a member having a light reflection region and an electret member that is charged at a predetermined electric potential. The sheet member is tilted by applying an electric potential that is substantially equivalent to an electric potential of the electret member to one of the electrodes and applying a ground potential to another one of the electrodes.
摘要翻译：实现了一种小型化和高度集成的光学偏转装置，其中用于驱动光学偏转装置的电极的数量减少。光学偏转装置实现电浮动的片状部件和实施在基板上的多个电极。片状构件包括具有光反射区域的构件和以预定电位充电的驻极体构件。通过向其中一个电极施加基本上等于驻极体部件的电位的电位并向另一个电极施加接地电位而使片状部件倾斜。

29. 发明授权

US06979837B2 Stacked organic memory devices and methods of operating and fabricating 有权
公开(公告)号：US06979837B2
公开(公告)日：2005-12-27
申请号：US10848679
申请日：2004-05-19
申请人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
发明人： Nicholas H. Tripsas , Uzodinma Okoroanyanwu , Suzette K. Pangrle , Michael A. VanBuskirk
IPC分类号： G11C11/56 , G11C13/02 , H01L27/28 , H01L51/00 , H01L51/30
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C13/0016 , H01L27/28 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0041 , H01L51/0077 , H01L51/0078
摘要： The present invention provides a multi-layer organic memory device that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component can be formed with two or more electrodes having a selectively conductive media between the electrodes forming individual cells, while utilizing a partitioning component to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks can be formed by adding additional layers—respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.

30. 发明申请

US20050269566A1 Programmable structure, an array including the structure, and methods of forming the same 有权
标题翻译：可编程结构，包括结构的阵列及其形成方法
公开(公告)号：US20050269566A1
公开(公告)日：2005-12-08
申请号：US11200433
申请日：2005-08-09
申请人： Michael Kozicki
发明人： Michael Kozicki
IPC分类号： G11C11/34 , G11C11/56 , G11C13/02 , G11C16/02 , H01L21/8236 , H01L27/10 , H01L27/24 , H01L29/04 , H01L29/06 , H01L29/10 , H01L29/12 , H01L29/40 , H01L45/00 , H01L47/00
CPC分类号： G11C11/34 , B82Y10/00 , G11C11/5614 , G11C13/0011 , G11C13/04 , G11C23/00 , G11C2013/0047 , G11C2207/104 , G11C2213/15 , G11C2213/34 , G11C2213/51 , G11C2213/72 , G11C2213/77 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1226 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1658 , H01L45/1675 , H01L45/1683
摘要： A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
摘要翻译：公开了一种适用于存储信息的微电子可编程结构，以及包括形成和编程结构的结构和方法的阵列。可编程结构通常包括离子导体和多个电极。可以通过向结构施加能量来改变结构的电特性，因此可以使用该结构存储信息。

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