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21. 发明申请

US20120178209A1 Methods Of Forming Metal-Containing Structures, And Methods Of Forming Germanium-Containing Structures 有权
标题翻译：形成含金属结构的方法以及形成含锗结构的方法
公开(公告)号：US20120178209A1
公开(公告)日：2012-07-12
申请号：US13426926
申请日：2012-03-22
申请人： Timothy A. Quick , Eugene P. Marsh
发明人： Timothy A. Quick , Eugene P. Marsh
IPC分类号： H01L21/06 , H01L21/205
CPC分类号： C23C16/45527 , C23C16/45534
摘要： Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.
摘要翻译：一些实施方案包括形成含金属结构的方法。可以在衬底上形成第一含金属的材料。在形成第一含金属材料之后，当基板在反应室内时，可以使用含氢反应物在第一含金属材料上形成含氢层。含氢反应物可以是例如甲酸和/或甲醛。可以从反应室内清除任何未反应的含氢反应物，然后含金属的前体可以流入反应室。含氢层可以在将含金属的前体转化成直接形成第一含金属材料的第二含金属材料中使用。一些实施方案包括形成含锗结构的方法，例如形成含有锗，锑和碲的相变材料的方法。

22. 发明授权

US08193388B2 Compounds for depositing tellurium-containing films 有权
标题翻译：用于沉积含碲膜的化合物
公开(公告)号：US08193388B2
公开(公告)日：2012-06-05
申请号：US12423382
申请日：2009-04-14
申请人： Benjamin J. Feist , Christian Dussarrat
发明人： Benjamin J. Feist , Christian Dussarrat
IPC分类号： C07C395/00 , C07D293/00 , H01L21/06
CPC分类号： C07C251/12 , C23C16/305 , C23C16/45553
摘要： Disclosed herein are tellurium metal-organic precursors and methods for depositing tellurium-containing films on a substrate.
摘要翻译：本文公开了碲金属 - 有机前体和用于在衬底上沉积含碲膜的方法。

23. 发明申请

US20120134204A1 CONCENTRIC PHASE CHANGE MEMORY ELEMENT 有权
标题翻译：集中相变记忆元素
公开(公告)号：US20120134204A1
公开(公告)日：2012-05-31
申请号：US13364727
申请日：2012-02-02
申请人： Thomas D. Happ , Alejandro G. Schrott
发明人： Thomas D. Happ , Alejandro G. Schrott
IPC分类号： G11C11/00 , H01L21/06
CPC分类号： G11C13/0004 , G11C11/5678 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/165 , H01L45/1675 , H01L45/1683
摘要： The present invention in one embodiment provides a memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase change material and a cladding of a second phase change material, wherein the first phase change material has a lower crystallization temperature than the second phase change material. The present invention also provides methods of forming the above described memory device.
摘要翻译：在一个实施例中的本发明提供了一种包括第一电极的存储器件; 第二电极; 以及位于所述第一电极和所述第二电极之间的存储单元，所述存储单元包括第一相变材料的芯和第二相变材料的包层，其中所述第一相变材料具有比所述第二相变材料低的结晶温度相变材料本发明还提供了形成上述存储器件的方法。

24. 发明授权

US08187963B2 Method of forming back contact to a cadmium telluride solar cell 有权
标题翻译：形成与碲化镉太阳能电池的接触的方法
公开(公告)号：US08187963B2
公开(公告)日：2012-05-29
申请号：US12880671
申请日：2010-09-13
申请人： Bulent M. Basol
发明人： Bulent M. Basol
IPC分类号： H01L21/00 , H01L21/06 , H01L21/4763 , H01L21/3205 , H01L21/44
CPC分类号： H01L29/45 , H01L21/44 , H01L29/22 , H01L31/022425 , H01L31/073 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： A method of forming an ohmic contact to a surface of a Cd and Te containing compound film as may be found, for example in a photovoltaic cell. The method comprises forming a Te-rich layer on the surface of the Cd and Te containing compound film; depositing an interface layer on the Te-rich layer; and laying down a contact layer on the interface layer. The interface layer is composed of a metallic form of Zn and Cu.
摘要翻译：形成与Cd和Te的化合物膜的表面的欧姆接触的方法，例如在光伏电池中可以发现。该方法包括在含Cd和Te的化合物膜的表面上形成富Te层; 在富Te层上沉积界面层; 并在接口层上铺设接触层。界面层由金属形式的Zn和Cu组成。

25. 发明授权

US08187918B2 Methods of forming multi-level cell of semiconductor memory 有权
标题翻译：形成半导体存储器多级单元的方法
公开(公告)号：US08187918B2
公开(公告)日：2012-05-29
申请号：US12587772
申请日：2009-10-13
申请人： Gyu-Hwan Oh , Hyeung-Geun An , Soon-Oh Park , Dong-Ho Ahn , Young-Lim Park
发明人： Gyu-Hwan Oh , Hyeung-Geun An , Soon-Oh Park , Dong-Ho Ahn , Young-Lim Park
IPC分类号： H01L21/06
CPC分类号： H01L45/141 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1666 , H01L45/1683
摘要： Provided is a method of forming a semiconductor memory cell in which in order to store two bits or more data in a memory cell, three or more bottom electrode contacts (BECs) and phase-change materials (GST) have a parallel structure on a single contact plug (CP) and set resistances are changed depending on thicknesses (S), lengths (L) or resistivities (ρ) of the three or more bottom electrode contacts, so that a reset resistance and three different set resistances enable data other than in set and reset states to be stored. Also, a method of forming a memory cell in which three or more phase-change materials (GST) have a parallel structure on a single bottom electrode contact, and the phase-change materials have different set resistances depending on composition ratio or type, so that four or more different resistances can be implemented is provided.
摘要翻译：提供了一种形成半导体存储单元的方法，其中为了在存储单元中存储两个或更多个数据，三个或更多个底部电极触点（BEC）和相变材料（GST）在单个存储单元上具有并联结构接触插头（CP）和设定电阻根据三个或更多个底部电极触点的厚度（S），长度（L）或电阻率（＆rgr）而改变，因此复位电阻和三种不同的设定电阻使数据不能在设置和复位状态下存储。此外，形成其中三个或更多个相变材料（GST）在单个底部电极接触上具有平行结构的存储单元的方法，并且相变材料根据组成比或类型具有不同的设定电阻，因此可以实现四个或更多个不同的电阻。

26. 发明授权

US08110476B2 Memory cell that includes a carbon-based memory element and methods of forming the same 有权
标题翻译：包含碳基记忆元件的记忆单元及其形成方法
公开(公告)号：US08110476B2
公开(公告)日：2012-02-07
申请号：US12418855
申请日：2009-04-06
申请人： Roy E. Scheuerlein , Alper Ilkbahar , April D. Shricker
发明人： Roy E. Scheuerlein , Alper Ilkbahar , April D. Shricker
IPC分类号： H01L21/00 , H01L21/06 , H01L29/02 , G11C11/00
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/0002 , G11C13/0009 , G11C13/025 , G11C2213/35 , G11C2213/71 , G11C2213/72 , H01L27/1021 , H01L27/285 , H01L51/0048 , Y10S977/712 , Y10S977/72 , Y10S977/721 , Y10S977/723 , Y10S977/734 , Y10S977/788 , Y10S977/789 , Y10S977/79 , Y10S977/855 , Y10S977/943
摘要： In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled to the steering element, wherein the memory element comprises a carbon-based material having a thickness of not more than ten atomic layers. The memory element may be formed by repeatedly performing the following steps: forming a layer of a carbon-based material, the layer having a thickness of about one monolayer, and subjecting the layer of carbon-based material to a thermal anneal. Other aspects are also described.
摘要翻译：根据本发明的方面，提供了一种形成存储单元的方法，所述方法包括在基板上形成操舵元件，以及形成耦合到所述操舵元件的存储元件，其中所述存储元件包括碳基材料具有不超过10个原子层的厚度。可以通过重复进行以下步骤来形成记忆元件：形成碳基材料层，该层具有约一个单层的厚度，并使碳基材料层进行热退火。还描述了其他方面。

27. 发明申请

US20120028410A1 METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND A METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE INCLUDING THE SAME 有权
标题翻译：形成锗 - 抗微生物材料的方法和形成包括其的半导体器件结构的方法
公开(公告)号：US20120028410A1
公开(公告)日：2012-02-02
申请号：US12844595
申请日：2010-07-27
申请人： Eugene P. Marsh
发明人： Eugene P. Marsh
IPC分类号： H01L21/06 , H01L21/20
CPC分类号： H01L45/1616 , C23C16/305 , C23C16/45531 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： A method of forming a material. The method comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An ALD layer cycle of a second metal is conducted, the ALD layer cycle comprising a reactive second metal precursor and a co-reactive second metal precursor. An ALD layer cycle of a third metal is conducted, the ALD layer cycle comprising a reactive third metal precursor and a co-reactive third metal precursor. The ALD layer cycles of the first metal, the second metal, and the third metal are repeated to form a material, such as a GeSbTe material, having a desired stoichiometry. Additional methods of forming a material, such as a GeSbTe material, are disclosed, as is a method of forming a semiconductor device structure including a GeSbTe material.
摘要翻译：一种形成材料的方法。该方法包括进行第一金属的ALD层循环，所述ALD层循环包含反应性第一金属前体和共反应性第一金属前体。进行第二金属的ALD层循环，ALD层循环包含反应性第二金属前体和共反应性第二金属前体。进行第三金属的ALD层循环，ALD层循环包含反应性第三金属前体和共反应性第三金属前体。重复第一金属，第二金属和第三金属的ALD层循环以形成具有所需化学计量的材料，例如GeSbTe材料。公开了形成诸如GeSbTe材料的材料的附加方法，以及形成包括GeSbTe材料的半导体器件结构的方法。

28. 发明授权

US08088643B2 Resistance variable memory device with nanoparticle electrode and method of fabrication 有权
标题翻译：具有纳米颗粒电极的电阻可变存储器件及其制造方法
公开(公告)号：US08088643B2
公开(公告)日：2012-01-03
申请号：US12355541
申请日：2009-01-16
申请人： Jun Liu , Kristy A. Campbell
发明人： Jun Liu , Kristy A. Campbell
IPC分类号： H01L21/06
CPC分类号： H01L45/1675 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/1273 , H01L45/143 , H01L45/16 , H01L45/1616 , H01L45/1625 , Y10S977/773
摘要： A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.
摘要翻译：一种基于硫族化物的可编程导体存储器件和形成该器件的方法，其中在电极和硫族化物玻璃区域之间提供纳米颗粒。形成纳米颗粒的方法利用电极上的模板或纳米颗粒的随机沉积。

29. 发明申请

US20110263070A1 TREATMENT OF THIN FILM LAYERS PHOTOVOLTAIC MODULE MANUFACTURE 有权
标题翻译：薄膜层的处理光伏组件制造
公开(公告)号：US20110263070A1
公开(公告)日：2011-10-27
申请号：US12766135
申请日：2010-04-23
申请人： Cory Allen Schaeffer , Brian Robert Murphy
发明人： Cory Allen Schaeffer , Brian Robert Murphy
IPC分类号： H01L31/18 , H01L21/06
CPC分类号： H01L21/6715 , H01L21/67706 , H01L31/0296 , H01L31/073 , H01L31/206 , Y02E10/543 , Y02P70/521
摘要： Systems and processes for treatment of a cadmium telluride thin film photovoltaic device are generally provided. The systems can include a treatment system and a conveyor system. The treatment system includes a preheating section, a treatment chamber, and an anneal oven that are integrally interconnected within the treatment system. The conveyor system is operably disposed within the treatment system and configured for transporting substrates in a serial arrangement into and through the preheat section, into and through the treatment chamber, and into and through the anneal oven at a controlled speed. The treatment chamber is configured for applying a material to a thin film on a surface of the substrate and the anneal oven is configured to heat the substrate to an annealing temperature as the substrates are continuously conveyed by the conveyor system through the treatment chamber.
摘要翻译：通常提供用于处理碲化镉薄膜光伏器件的系统和方法。系统可以包括处理系统和输送系统。处理系统包括在处理系统内整体互连的预热段，处理室和退火炉。输送系统可操作地设置在处理系统内并且被配置用于将串联装置中的基板输送并通过预热部分进入和通过处理室，并以受控的速度进入和通过退火炉。处理室被配置为将材料施加到基板的表面上的薄膜上，并且退火炉被构造成当基板被输送系统通过处理室连续输送时，将基板加热到退火温度。

30. 发明授权

US08017433B2 Post deposition method for regrowth of crystalline phase change material 有权
标题翻译：结晶相变材料再生长后沉积法
公开(公告)号：US08017433B2
公开(公告)日：2011-09-13
申请号：US12702406
申请日：2010-02-09
申请人： Chung H. Lam , Stephen M. Rossnagel , Alejandro G. Schrott
发明人： Chung H. Lam , Stephen M. Rossnagel , Alejandro G. Schrott
IPC分类号： H01L21/06 , H01L21/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1641 , H01L45/1683
摘要： Techniques for forming a phase change memory cell. An example method includes forming a bottom electrode within a substrate. The method includes forming a phase change layer above the bottom electrode. The method includes forming a capping layer and an insulator layer. The method includes crystallizing the phase change material in the phase change layer so that the phase change layer is void free. The method further comprises heating the phase change material in the phase change layer from the bottom electrode and as a result the phase change layer is crystallized from the bottom to the top. In one embodiment, a rapid thermal anneal (RTA) is applied for crystallizing the phase change material.
摘要翻译：形成相变存储单元的技术。一种示例性方法包括在衬底内形成底部电极。该方法包括在底部电极上形成相变层。该方法包括形成覆盖层和绝缘体层。该方法包括使相变层中的相变材料结晶，使得相变层无空隙。该方法还包括从底部电极加热相变层中的相变材料，结果相变层从底部到顶部结晶。在一个实施例中，应用快速热退火（RTA）以使相变材料结晶。

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