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31. 发明授权

US09042161B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US09042161B2
公开(公告)日：2015-05-26
申请号：US13230184
申请日：2011-09-12
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G11C11/24 , G11C5/02 , G11C11/404 , G11C11/4097 , G11C8/08
CPC分类号： G11C11/407 , G11C5/025 , G11C8/08 , G11C11/404 , G11C11/4097
摘要： In a memory device, memory capacity per unit area is increased while a period in which data is held is ensured. The memory device includes a driver circuit provided over a substrate, and a plurality of memory cell arrays which are provided over the driver circuit and driven by the driver circuit. Each of the plurality of memory cell arrays includes a plurality of memory cells. Each of the plurality of memory cells includes a first transistor including a first gate electrode overlapping with an oxide semiconductor layer, and a capacitor including a source electrode or a drain electrode, a first gate insulating layer, and a conductive layer. The plurality of memory cell arrays is stacked to overlap. Thus, in the memory device, memory capacity per unit area is increased while a period in which data is held is ensured.
摘要翻译：在存储装置中，确保了保持数据的期间的每单位面积的存储容量。存储器件包括设置在衬底上的驱动器电路和设置在驱动器电路上并由驱动器电路驱动的多个存储单元阵列。多个存储单元阵列中的每一个包括多个存储单元。多个存储单元中的每一个包括第一晶体管，其包括与氧化物半导体层重叠的第一栅电极，以及包括源电极或漏电极，第一栅绝缘层和导电层的电容器。堆叠多个存储单元阵列以重叠。因此，在存储装置中，确保了保持数据的期间的每单位面积的存储容量。

32. 发明授权

US09030298B2 Thin semiconductor device and operation method of thin semiconductor device 有权
标题翻译：薄型半导体器件及薄型半导体器件的操作方法
公开(公告)号：US09030298B2
公开(公告)日：2015-05-12
申请号：US13424737
申请日：2012-03-20
申请人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
发明人： Shunpei Yamazaki , Takeshi Osada , Yasuyuki Arai , Yuko Tachimura
IPC分类号： G06K9/00 , H01L23/66 , G06K19/07 , G06K7/00 , G06K19/077
CPC分类号： G06K19/072 , G06K7/0008 , G06K19/0723 , G06K19/07718 , G06K19/07749
摘要： The present invention provides a thin semiconductor device in which its security such as prevention of counterfeit or information leakage is to be enhanced. One feature of the present invention is a thin semiconductor device in which a plurality of thin film integrated circuits are mounted and in which at least one integrated circuit is different from the other integrated circuits in any one of a specification, layout, frequency for transmission or reception, a memory, a communication means, a communication rule and the like. According to the present invention, a thin semiconductor device tag having the plurality of thin film integrated circuits communicates with a reader/writer and at least one of the thin film integrated circuits receives a signal to write information in a memory, and the information written in the memory determines which of the thin film integrated circuits communicates.
摘要翻译：本发明提供一种薄型半导体器件，其中要防止伪造或信息泄漏的安全性得到提高。本发明的一个特征是薄型半导体器件，其中安装了多个薄膜集成电路，并且其中至少一个集成电路与其他集成电路不同，其中任何一个规格，布局，传输频率或接收，存储器，通信装置，通信规则等。根据本发明，具有多个薄膜集成电路的薄的半导体器件标签与读取器/写入器通信，并且至少一个薄膜集成电路接收将信息写入存储器的信号，并且写入的信息存储器确定薄膜集成电路中的哪一个通信。

33. 发明授权

US09029184B2 Photoelectric conversion device and method for manufacturing the same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US09029184B2
公开(公告)日：2015-05-12
申请号：US12405465
申请日：2009-03-17
申请人： Shunpei Yamazaki , Akihisa Shimomura
发明人： Shunpei Yamazaki , Akihisa Shimomura
IPC分类号： H01L31/18 , H01L31/0392 , H01L31/0224 , H01L31/0236 , H01L31/068 , H01L31/0687 , H01L31/072 , H01L31/0725 , H01L31/075 , H01L31/076 , H01L31/00
CPC分类号： H01L31/03921 , H01L21/76254 , H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/068 , H01L31/0687 , H01L31/072 , H01L31/0725 , H01L31/075 , H01L31/076 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1896 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： To provide a resource-saving photoelectric conversion device with excellent photoelectric conversion characteristics. Thin part of a single crystal semiconductor substrate, typically a single crystal silicon substrate, is detached to structure a photoelectric conversion device using a thin single crystal semiconductor layer, which is the detached thin part of the single crystal semiconductor substrate. The thin part of the single crystal semiconductor substrate is detached by a method in which a substrate is irradiated with ions accelerated by voltage, or a method in which a substrate is irradiated with a laser beam which makes multiphoton absorption occur. A so-called tandem-type photoelectric conversion device is obtained by stacking a unit cell including a non-single-crystal semiconductor layer over the detached thin part of the single crystal semiconductor substrate.
摘要翻译：提供具有优异光电转换特性的资源节约型光电转换装置。分离单晶半导体衬底（通常为单晶硅衬底）的薄部分，以使用作为单晶半导体衬底的分离薄的部分的薄单晶半导体层来构造光电转换器件。通过利用电压加速的离子照射基板的方法或者使用产生多光子吸收的激光束照射基板的方法来分离单晶半导体基板的薄部分。通过在单晶半导体衬底的分离薄的部分上堆叠包括非单晶半导体层的单位电池，可以获得所谓的串联型光电转换装置。

34. 发明授权

US09024309B2 Display device 有权
公开(公告)号：US09024309B2
公开(公告)日：2015-05-05
申请号：US12556704
申请日：2009-09-10
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC分类号： H01L33/00 , H01L27/12 , G02F1/1362 , H01L27/02 , H01L29/786
摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

35. 发明授权

US09012993B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09012993B2
公开(公告)日：2015-04-21
申请号：US13549864
申请日：2012-07-16
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/417 , H01L27/02 , H01L27/07 , H01L27/108 , H01L27/115 , H01L27/12 , H01L49/02 , G11C11/404
CPC分类号： H01L27/1255 , G11C11/404 , H01L27/0207 , H01L27/0733 , H01L27/10805 , H01L27/1085 , H01L27/10873 , H01L27/1156 , H01L27/1225 , H01L28/40 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： An object of the present invention is to provide a semiconductor device in which stored data can be held even when power is not supplied for a certain time. Another object is to increase the degree of integration of a semiconductor device and to increase the storage capacity per unit area. A semiconductor device is formed with a material capable of sufficiently reducing off-state current of a transistor, such as an oxide semiconductor material that is a wide-bandgap semiconductor. With the use of a semiconductor material capable of sufficiently reducing off-state current of a transistor, the semiconductor device can hold data for a long time. Furthermore, a wiring layer provided under a transistor, a high-resistance region in an oxide semiconductor film, and a source electrode are used to form a capacitor, thereby reducing the area occupied by the transistor and the capacitor.
摘要翻译：本发明的一个目的是提供一种即使在一定时间内没有供电也可以保存存储的数据的半导体器件。另一个目的是增加半导体器件的集成度并增加每单位面积的存储容量。半导体器件形成有能够充分降低诸如作为宽带隙半导体的氧化物半导体材料的晶体管的截止电流的材料。通过使用能够充分降低晶体管的截止电流的半导体材料，半导体器件可以长时间保存数据。此外，使用设置在晶体管下方的布线层，氧化物半导体膜中的高电阻区域和源电极来形成电容器，从而减小晶体管和电容器占据的面积。

36. 发明授权

US09012949B2 Light-emitting module, light-emitting device, and method for manufacturing the light-emitting module 有权
标题翻译：发光模块，发光装置以及发光模块的制造方法
公开(公告)号：US09012949B2
公开(公告)日：2015-04-21
申请号：US13543715
申请日：2012-07-06
申请人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
IPC分类号： H01L33/36 , H01L51/52 , H01L27/32
CPC分类号： H01L51/5246 , G02F1/133514 , G02F1/133603 , G02F1/1339 , G02F1/1368 , H01L27/322 , H01L27/3246 , H01L51/0096 , H01L51/524 , H01L51/5253 , H01L2251/5315
摘要： A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.
摘要翻译：提供了高度可靠的发光模块或发光装置。提供一种用于制造高度可靠的发光模块的方法。发光模块在第一基板和第二基板之间包括设置在第一基板上的第一电极，设置在第一电极上的第二电极，其间插入有发光有机化合物的层，牺牲层使用设置在第二电极上的液体材料形成。

37. 发明授权

US09006051B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09006051B2
公开(公告)日：2015-04-14
申请号：US12423563
申请日：2009-04-14
申请人： Yoshiaki Oikawa , Masayuki Kajiwara , Masataka Nakada , Masami Jintyou , Shunpei Yamazaki
发明人： Yoshiaki Oikawa , Masayuki Kajiwara , Masataka Nakada , Masami Jintyou , Shunpei Yamazaki
IPC分类号： H01L21/56 , H01L21/336 , H01L27/12 , H01L23/31
CPC分类号： H01L27/1266 , H01L21/568 , H01L23/3107 , H01L23/3114 , H01L27/1214 , H01L29/78606 , H01L29/78666 , H01L29/78669 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , H01L2924/00
摘要： An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.
摘要翻译：本发明的目的是通过降低膜的剥离度来提高半导体器件的耐水性和可靠性。在半导体装置中，将第一无机绝缘层，半导体元件层，第二无机绝缘层，有机绝缘层和第三无机绝缘层依次层叠在基板上。第二无机绝缘层在设置在半导体元件层中的开口部分与第一无机绝缘层接触。第三无机绝缘层在设置在有机绝缘层中的开口部分与第二无机绝缘层接触。在第二无机绝缘层和第三无机绝缘层相互接触的区域中，第二无机绝缘层具有多个不规则或开口。

38. 发明授权

US09000431B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09000431B2
公开(公告)日：2015-04-07
申请号：US13344015
申请日：2012-01-05
申请人： Hidekazu Miyairi , Takeshi Osada , Kengo Akimoto , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Takeshi Osada , Kengo Akimoto , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/423 , H01L27/12
CPC分类号： H01L29/78648 , H01L27/1225 , H01L27/124 , H01L29/42384 , H01L29/78645 , H01L29/7869 , H01L29/78696
摘要： As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced.
摘要翻译：作为显示装置具有更高的清晰度，像素数，栅极线和信号线的数量增加。当栅极线和信号线的数量增加时，存在难以安装包括用于通过接合等驱动栅极和信号线的驱动电路的IC芯片，由此增加制造成本的问题。用于驱动像素部分的像素部分和驱动电路设置在相同的基板上，驱动电路的至少一部分包括薄膜晶体管，该薄膜晶体管使用介于氧化物半导体上方和下方的栅电极之间的氧化物半导体。像素部分和驱动器部分设置在相同的基板上，由此可以降低制造成本。

39. 发明授权

US08994756B2 Method for driving display device in which analog signal and digital signal are supplied to source driver 有权
标题翻译：用于驱动显示装置的方法，其中模拟信号和数字信号被提供给源驱动器
公开(公告)号：US08994756B2
公开(公告)日：2015-03-31
申请号：US11381073
申请日：2006-05-01
申请人： Hajime Kimura , Shunpei Yamazaki
发明人： Hajime Kimura , Shunpei Yamazaki
IPC分类号： G09G5/10 , G09G3/30 , G09G3/32 , G09G3/20
CPC分类号： G09G3/3241 , G09G3/2011 , G09G3/325 , G09G3/3291 , G09G2300/0439 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/027
摘要： A display method and device obtains advantages of both an analog gray scale method and a digital gray scale method by performing display in multiple display modes. In a display mode-specific video signal generation circuit, an input video signal is output, as an analog value without any change, as a binary digital value, and as a multi-valued digital value. As a result, the display mode changes in a timely manner. Accordingly, a clear image can be displayed. In other words, an analog signal and a digital signal are switched and input to a source driver. In addition, the display device also switches and outputs an analog signal and a digital signal such that the display device can have the advantages of both the analog gray scale method and the digital gray scale method.
摘要翻译：显示方法和装置通过在多种显示模式下进行显示来获得模拟灰度法和数字灰度法的优点。在特定于显示模式的视频信号产生电路中，将输入视频信号作为二进制数字值输出作为模拟值而不作任何改变，并作为多值数字值。结果，显示模式及时地改变。因此，可以显示清晰的图像。换句话说，模拟信号和数字信号被切换并输入到源驱动器。此外，显示装置还切换并输出模拟信号和数字信号，使得显示装置可以具有模拟灰度法和数字灰度法的优点。

40. 发明授权

US08994086B2 Memory device made from stacked substrates bonded with a resin containing conductive particles 有权
标题翻译：由与含有导电颗粒的树脂粘合的堆叠衬底制成的存储器件
公开(公告)号：US08994086B2
公开(公告)日：2015-03-31
申请号：US12904313
申请日：2010-10-14
申请人： Shunpei Yamazaki , Hiroko Abe , Yukie Nemoto , Ryoji Nomura , Mikio Yukawa
发明人： Shunpei Yamazaki , Hiroko Abe , Yukie Nemoto , Ryoji Nomura , Mikio Yukawa
IPC分类号： H01L21/3205 , H01L21/822 , B82Y10/00 , G11C13/00 , G11C17/14 , G11C17/16 , G11C17/18 , H01L27/06 , H01L27/24 , H01L45/00 , H01L27/12
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
摘要翻译：本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作天线。存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

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