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    • 42. 发明申请
    • ARCHITECTURE FOR ROUTING RESOURCES IN A FIELD PROGRAMMABLE GATE ARRAY
    • 用于在现场可编程门阵列中路由资源的架构
    • US20070285126A1
    • 2007-12-13
    • US11843575
    • 2007-08-22
    • Sinan Kaptanoglu
    • Sinan Kaptanoglu
    • H03K19/177
    • H03K19/17736H03K19/17796
    • A turning structure for routing channels in a field programmable gate array, comprising a first plurality of routing channels having a first direction and a second plurality of routing channels having a second direction. The first plurality of routing channels intersects the second plurality of routing channels to form a plurality of matrices of intersecting interconnect conductors in the routing channels. A first number of reprogrammable elements is disposed at intersections in at least one of the plurality of matrices, a second number of reprogrammable elements disposed at intersections in at least one of the plurality of matrices. The second number of reprogrammable elements is greater than the first number of reprogrammable elements, and a third number of reprogrammable elements disposed at intersections in at least one of the plurality of matrices. The third number of reprogrammable elements is greater than the second number of reprogrammable elements.
    • 一种用于在现场可编程门阵列中路由信道的转动结构,包括具有第一方向的第一多个路由信道和具有第二方向的第二多个路由信道。 第一多个路由信道与第二多个路由信道相交,以在路由信道中形成多个交叉互连导体矩阵。 第一数量的可编程元件设置在多个矩阵中的至少一个矩阵中的交点处,第二数量的可重新编程元件设置在多个矩阵中的至少一个矩阵中的相交处。 第二数量的可再编程元件大于第一数量的可再编程元件,并且第三数量的可重新编程元件设置在多个矩阵中的至少一个矩阵中的相交处。 第三数量的可编程元件大于第二数量的可编程元件。
    • 43. 发明申请
    • CIRCUIT AND METHOD FOR SUPPLYING PROGRAMMING POTENTIAL AT VOLTAGES LARGER THAN BVDSS OF PROGRAMMING TRANSISTORS
    • 电压超过编程晶体管BVDSS的电压编程电路的电路和方法
    • US20070279122A1
    • 2007-12-06
    • US11769169
    • 2007-06-27
    • John McCollum
    • John McCollum
    • H01H37/76
    • G11C17/18
    • A circuit for programming an antifuse coupled between a first node and a second node includes at least one transistor for supplying a programming potential VPP to the first node. A first transistor has a source coupled to a third node switchably coupleable between a potential of VPP/2 and ground potential, a drain, and a gate. A second transistor has a source coupled to the drain of the first transistor, a drain coupled to the second node, and a gate. Programming circuitry is coupled to the gate of the first transistor and the gate of the second transistor and configured to in a programming mode apply a potential of either zero volts or VPP/2 to the gate of the first transistor and to apply a potential of VPP/2 to the gate of the second transistor. The first and second transistors have a BVDss rating of not more than about VPP/2.
    • 用于对耦合在第一节点和第二节点之间的反熔丝进行编程的电路包括用于向第一节点提供编程电位V PP的至少一个晶体管。 第一晶体管具有耦合到第三节点的源极,其可切换地耦合在V PP / 2/2的电位和地电位之间,漏极和栅极。 第二晶体管具有耦合到第一晶体管的漏极的源极,耦合到第二节点的漏极和栅极。 编程电路耦合到第一晶体管的栅极和第二晶体管的栅极,并且被配置为在编程模式中将零电压或VPP / 2的电位施加到第一晶体管的栅极,并施加VPP的电位 / 2连接到第二晶体管的栅极。 第一和第二晶体管的BVDss等级不大于约V PP / 2。
    • 45. 发明授权
    • Architecture for routing resources in a field programmable gate array
    • 用于在现场可编程门阵列中路由资源的架构
    • US07279930B2
    • 2007-10-09
    • US11202686
    • 2005-08-12
    • Sinan Kaptanoglu
    • Sinan Kaptanoglu
    • H03K19/177
    • H03K19/17736H03K19/17796
    • A turning structure for routing channels in a field programmable gate array, comprising a first plurality of routing channels having a first direction and a second plurality of routing channels having a second direction. The first plurality of routing channels intersects the second plurality of routing channels to form a plurality of matrices of intersecting interconnect conductors in the routing channels. A first number of reprogrammable elements is disposed at intersections in at least one of the plurality of matrices, a second number of reprogrammable elements disposed at intersections in at least one of the plurality of matrices. The second number of reprogrammable elements is greater than the first number of reprogrammable elements, and a third number of reprogrammable elements disposed at intersections in at least one of the plurality of matrices. The third number of reprogrammable elements is greater than the second number of reprogrammable elements.
    • 一种用于在现场可编程门阵列中路由信道的转动结构,包括具有第一方向的第一多个路由信道和具有第二方向的第二多个路由信道。 第一多个路由信道与第二多个路由信道相交,以在路由信道中形成多个交叉互连导体矩阵。 第一数量的可编程元件设置在多个矩阵中的至少一个矩阵中的交点处,第二数量的可重新编程元件设置在多个矩阵中的至少一个矩阵中的相交处。 第二数量的可再编程元件大于第一数量的可再编程元件,并且第三数量的可重新编程元件设置在多个矩阵中的至少一个矩阵中的相交处。 第三数量的可编程元件大于第二数量的可编程元件。
    • 46. 发明申请
    • BLOCK SYMMETRIZATION IN A FIELD PROGRAMMABLE GATE ARRAY
    • 在现场可编程门阵列中的块对称
    • US20070210829A1
    • 2007-09-13
    • US11748865
    • 2007-05-15
    • Sinan Kaptanoglu
    • Sinan Kaptanoglu
    • H03K19/177
    • H03K19/17736H03K19/17728H03K19/1778H03K19/17796
    • An FPGA architecture has top, middle and low levels. The top level is an array of B16×16 tiles enclosed by I/O blocks. The routing resources in the middle level are expressway routing channels including interconnect conductors. At the lowest level, there are block connect routing channels, local mesh routing channels, and direct connect interconnect conductors to connect the logic elements to further routing resources. Each B1 block includes four clusters of devices. Each of the clusters includes first and second LUT3s, a LUT2, and a DFF. Each of the LUT3s have three inputs and one output. Each of the LUT2s have two inputs and one output. Each DFF has a data input and a data output. In each of the clusters the outputs of the LUT3s are multiplexed to the input of DFF, and symmetrized with the output of the DFF to form two outputs of each of the clusters.
    • FPGA架构具有顶级,中级和低级。 顶级是由I / O块包围的B16x16瓦数组。 中间路由资源是高速公路路由信道,包括互连导体。 在最底层,有块连接路由通道,本地网状路由通道和直接连接互连导体,以将逻辑元件连接到更多的路由资源。 每个B 1块包括四组设备。 每个簇包括第一和第二LUT 3 s,LUT 2和DFF。 LUT 3中的每一个具有三个输入和一个输出。 LUT 2中的每一个具有两个输入和一个输出。 每个DFF都有数据输入和数据输出。 在每个簇中,LUT 3的输出被复用到DFF的输入,并且与DFF的输出对称,以形成每个簇的两个输出。
    • 47. 发明授权
    • Address transition detector for fast flash memory device
    • 用于快速闪存器件的地址转换检测器
    • US07268589B2
    • 2007-09-11
    • US11303863
    • 2005-12-16
    • Poongyeub LeeMing-Chi Liu
    • Poongyeub LeeMing-Chi Liu
    • H03K19/00
    • G11C7/22G11C7/04G11C7/08G11C7/12G11C8/18G11C2207/061G11C2207/2281H03K2005/00039
    • An address transition detector circuit includes an input node, an output node, a bandgap reference node, and Pbias and Nbias nodes having voltages derived from the bandgap reference node. First through fifth cascaded inverters are each powered by a p-channel and n-channel MOS bias transistors having their gates coupled respectively to the Pbias node and the Nbias node. The input of the first inverter is coupled to the input node. First and second capacitors are coupled respectively to ground from the outputs of the first and fourth cascaded inverters. A NAND gate has a first input coupled to the input node, a second input coupled the output of the fifth cascaded inverter, and an output coupled to the output node.
    • 地址转换检测器电路包括具有从带隙参考节点导出的电压的输入节点,输出节点,带隙参考节点和P SUB偏置和N SUB偏置节点。 第一到第五级联反相器各自由p沟道和n沟道MOS偏置晶体管供电,其栅极分别耦合到P偏置偏压节点和N SUB偏置节点。 第一反相器的输入耦合到输入节点。 第一和第二电容器从第一和第四级联逆变器的输出分别耦合到地。 NAND门具有耦合到输入节点的第一输入,耦合第五级联反相器的输出的第二输入和耦合到输出节点的输出。
    • 48. 发明授权
    • SRAM cell controlled by flash memory cell
    • 由闪存单元控制的SRAM单元
    • US07224603B1
    • 2007-05-29
    • US11427456
    • 2006-06-29
    • William C. Plants
    • William C. Plants
    • G11C14/00
    • G11C14/00G11C11/412G11C14/0063H03K19/1776
    • First and second complimentary static random-access-memory cell bit lines are coupled to first and second bit nodes through first and second access transistors controlled by a word line. A first inverter has an input coupled to the first bit node and an output coupled to the second bit node. A second inverter has an input coupled to the second bit node and an output coupled to the first bit node through a first transistor switch. A transistor switch is coupled between the output of a non-volatile memory cell and the first bit node. A control circuit coupled to the gate of the transistor switch. Either the drive level of the non-volatile memory cell is selected to overpower the output of the second inverter or the second inverter is decoupled from the first bit node while the output of the non-volatile memory cell is coupled to the first bit node.
    • 第一和第二互补静态随机存取存储器单元位线通过由字线控制的第一和第二存取晶体管耦合到第一和第二位节点。 第一反相器具有耦合到第一位节点的输入和耦合到第二位节点的输出。 第二反相器具有耦合到第二位节点的输入和通过第一晶体管开关耦合到第一位节点的输出。 晶体管开关耦合在非易失性存储单元的输出和第一位节点之间。 耦合到晶体管开关的栅极的控制电路。 选择非易失性存储单元的驱动电平以使第二反相器的输出过压,或者第二反相器与第一位节点去耦,而非易失性存储单元的输出耦合到第一位节点。
    • 49. 发明授权
    • Field programmable gate array long line routing network
    • 现场可编程门阵列长线路由网络
    • US07212030B1
    • 2007-05-01
    • US11028471
    • 2004-12-31
    • Volker Hecht
    • Volker Hecht
    • H03K19/173
    • H03K19/17736
    • A multi-directional routing repeater has a plurality of buffers, each of the plurality of buffers has an input and an output. The output of each of the plurality of buffers is connected to a separate routing line for transmitting a signal in a separate direction of a first set of routing lines, and the input of each of the plurality of buffers is connected to one of a first set of programmable switches, one of a second set programmable switches, one of a third set of programmable switches, and one of a fourth set of programmable switches, and each one of the first set of programmable switches is connected to a separate one of the second set of programmable switches and a separate one of the second set of programmable switches, none of which are connected to an input of a same one of the plurality of buffers. Each one of the first set of programmable switches is connected to a separate routing line for transmitting a signal in a separate direction of a second set of routing lines.
    • 多方向路由中继器具有多个缓冲器,多个缓冲器中的每一个具有输入和输出。 多个缓冲器中的每一个的输出被连接到单独的路由线路,用于在第一组路由线路的单独方向上发送信号,并且多个缓冲器中的每一个的输入连接到第一组 可编程开关之一,第二组可编程开关之一,第三组可编程开关之一和第四组可编程开关之一,并且第一组可编程开关中的每一个连接到第二组可编程开关中的单独一个 一组可编程开关和第二组可编程开关中的单独一个,其中没有一个连接到多个缓冲器中相同的一个缓冲器的输入端。 第一组可编程开关中的每一个连接到用于在第二组路由线的单独方向上发送信号的分离的路线。