专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20070235826A1 DEVICES HAVING HORIZONTALLY-DISPOSED NANOFABRIC ARTICLES AND METHODS OF MAKING THE SAME 有权
标题翻译：具有水溶性纳米制品的装置及其制造方法
公开(公告)号：US20070235826A1
公开(公告)日：2007-10-11
申请号：US11193795
申请日：2005-07-29
申请人： Venkatachalam Jaiprakash , Jonathan Ward , Thomas Rueckes , Brent Segal
发明人： Venkatachalam Jaiprakash , Jonathan Ward , Thomas Rueckes , Brent Segal
IPC分类号： H01L29/84
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/724 , Y10S977/734 , Y10S977/742
摘要： New devices having horizontally-disposed nanofabric articles and methods of making same are described. A discrete electro-mechanical device includes a structure having an electrically-conductive trace. A defined patch of nanotube fabric is disposed in spaced relation to the trace; and the defined patch of nanotube fabric is electromechanically deflectable between a first and second state. In the first state, the nanotube article is in spaced relation relative to the trace, and in the second state the nanotube article is in contact with the trace. A low resistance signal path is in electrical communication with the defined patch of nanofabric. Under certain embodiments, the structure includes a defined gap into which the electrically conductive trace is disposed. The defined gap has a defined width, and the defined patch of nanotube fabric spans the gap and has a longitudinal extent that is slightly longer than the defined width of the gap. Under certain embodiments, a clamp is disposed at each of two ends of the nanotube fabric segment and disposed over at least a portion of the nanotube fabric segment substantially at the edges defining the gap. Under certain embodiments, the clamp is made of electrically-conductive material. Under certain embodiments, the contact between the nanotube patch and the trace is a non-volatile state. Under certain embodiments, the contact between the nanotube patch and the trace is a volatile state. Under certain embodiments, the at least one electrically conductive trace has an interface material to alter the attractive force between the nanotube fabric segment and the electrically conductive trace.
摘要翻译：描述了具有水平布置的纳米制品的新器件及其制造方法。分立的机电装置包括具有导电迹线的结构。定义的纳米管织物贴片与痕迹间隔开设置; 并且所述限定的纳米管织物片在第一和第二状态之间是机电偏转的。在第一状态下，纳米管制品相对于迹线具有间隔的关系，并且在第二状态下，纳米管制品与痕迹接触。低电阻信号路径与所定义的纳米片段电连通。在某些实施例中，该结构包括限定的导电迹线设置的间隙。限定的间隙具有限定的宽度，并且限定的纳米管织物片段跨过间隙并且具有比限定的间隙宽度稍长的纵向范围。在某些实施例中，夹具设置在纳米管织物片段的两端中的每一个处，并且在纳米管织物片段的至少一部分上大致位于限定间隙的边缘处。在某些实施例中，夹具由导电材料制成。在某些实施方案中，纳米管贴片和迹线之间的接触是非挥发性状态。在某些实施方案中，纳米管贴片和迹线之间的接触是挥发性状态。在某些实施例中，至少一个导电迹线具有界面材料，以改变纳米管织物片段和导电迹线之间的吸引力。

42. 发明授权

US07268044B2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same 有权
公开(公告)号：US07268044B2
公开(公告)日：2007-09-11
申请号：US11541834
申请日：2006-10-02
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.

43. 发明申请

US20070161237A1 Nanoscopic wired-based devices and arrays 审中-公开
标题翻译： Nanoscopic有线设备和阵列
公开(公告)号：US20070161237A1
公开(公告)日：2007-07-12
申请号：US11540148
申请日：2006-09-29
申请人： Charles Lieber , Thomas Rueckes , Ernesto Joselevich , Kevin Kim
发明人： Charles Lieber , Thomas Rueckes , Ernesto Joselevich , Kevin Kim
IPC分类号： H01L21/44
CPC分类号： G11C23/00 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , G11C13/025 , G11C2213/16 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L27/10 , H01L27/285 , H01L51/0048 , H01L51/0052 , H01L51/0595 , Y10S977/75 , Y10S977/762 , Y10S977/843 , Y10S977/932 , Y10S977/936 , Y10S977/943
摘要： Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
摘要翻译：描述由纳米线组成的电气装置及其制造和使用的方法。纳米线可以是纳米管，优选单壁碳纳米管。它们可以使用化学图案化的表面，通过化学气相沉积方向布置在横杆阵列中。化学气相沉积也可以用于在引导电场的情况下在阵列中形成纳米管，任选地与自组装单层图案组合。描述双稳态设备。

44. 发明授权

US07176505B2 Electromechanical three-trace junction devices 失效
标题翻译：机电三迹交界器件
公开(公告)号：US07176505B2
公开(公告)日：2007-02-13
申请号：US10802900
申请日：2004-03-17
申请人： Thomas Rueckes , Brent M. Segal , Claude Bertin
发明人： Thomas Rueckes , Brent M. Segal , Claude Bertin
IPC分类号： H01L27/10
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/77 , H01H1/0094 , Y10S977/742 , Y10S977/932 , Y10S977/936 , Y10S977/943
摘要： Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the first and second conductive elements. The nanotube ribbon is movable toward at least one of the first and second electrically conductive elements in response to electrical stimulus applied to at least one of the first and second electrically conductive elements and the nanotube ribbon. Such circuits may be formed into arrays of cells. One of the conductive elements may be used to create an attractive force to cause the nanotube ribbon to contact a conductive element, and the other of the conductive elements may be used to create an attractive force to pull the nanotube ribbon from contact with the contacted conductive element. The electrically conductive traces may be aligned or unaligned with one another.
摘要翻译：三轨迹机电回路及其使用方法。电路包括第一和第二导电元件，其间设置有纳米管带（或其他机电元件）。绝缘层设置在第一和第二导电元件之一上。响应于施加到第一和第二导电元件和纳米管带中的至少一个的电刺激，纳米管带可朝着第一和第二导电元件中的至少一个移动。这样的电路可以形成为电池阵列。可以使用导电元件之一来产生引导纳米管带与导电元件接触的吸引力，并且另一导电元件可用于产生吸引力以将纳米管带从接触导电元件。导电迹线可以彼此对准或不对准。

45. 发明申请

US20070020859A1 Method of making non-volatile field effect devices and arrays of same 审中-公开
标题翻译：制造非易失性场效应器件及其阵列的方法
公开(公告)号：US20070020859A1
公开(公告)日：2007-01-25
申请号：US11527127
申请日：2006-09-26
申请人： Claude Bertin , Thomas Rueckes , Brent Segal
发明人： Claude Bertin , Thomas Rueckes , Brent Segal
IPC分类号： H01L21/8234
CPC分类号： H01L29/78 , B82Y10/00 , B82Y99/00 , G11C7/065 , G11C13/025 , G11C16/0416 , G11C17/16 , G11C17/165 , G11C23/00 , G11C2213/16 , G11C2213/17 , G11C2213/79 , H01H1/0094 , H01L27/10 , H01L27/1052 , H01L27/112 , H01L27/11206 , H01L27/115 , H01L27/286 , H01L29/0665 , H01L29/0673 , H01L29/42324 , H01L51/0048 , H01L51/0052 , H01L51/0508 , Y10S977/708 , Y10S977/724 , Y10S977/742 , Y10S977/762 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Methods of making non-volatile field effect devices and arrays of same. Under one embodiment, a method of making a non-volatile field effect device includes providing a substrate with a field effect device formed therein. The field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. An electromechanically-deflectable, nanotube switching element is formed over the field effect device. Terminals and corresponding interconnect are provided to correspond to each of the source, drain and gate such that the nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal, and such that the others of said source, drain and gate are directly connected to their corresponding terminals.
摘要翻译：制造非易失性场效应器件及其阵列的方法。在一个实施例中，制造非易失性场效应器件的方法包括提供其中形成有场效应器件的衬底。场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。在场效应器件上形成机电偏转的纳米管开关元件。提供端子和相应的互连件以对应于源极，漏极和栅极中的每一个，使得纳米管开关元件电气地定位在源极，漏极和栅极之间及其对应的端子之间，并且使得其他源极，漏极并且门直接连接到其相应的端子。

46. 发明申请

US20070018260A1 Devices having vertically-disposed nanofabric articles and methods of making the same 有权
标题翻译：具有垂直布置的纳米制品的装置及其制造方法
公开(公告)号：US20070018260A1
公开(公告)日：2007-01-25
申请号：US11158544
申请日：2005-06-22
申请人： Venkatachalam Jaiprakash , Jonathan Ward , Thomas Rueckes , Brent Segal
发明人： Venkatachalam Jaiprakash , Jonathan Ward , Thomas Rueckes , Brent Segal
IPC分类号： H01L29/82 , H01L27/14 , H01L31/115 , H01L23/48
CPC分类号： G11C13/025 , B81B2203/0338 , B81B2203/04 , B81C1/00142 , B81C2201/0109 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/22 , G11C11/56 , G11C13/0033 , G11C23/00 , G11C2213/16 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L21/76838 , H01L51/0048 , H01L2221/1094 , Y10S977/943
摘要： Electro-mechanical switches and memory cells using vertically-disposed nanofabric articles and methods of making the same are described. An electro-mechanical device, includes a structure having a major horizontal surface and a channel formed therein. A conductive trace is in the channel; and a nanotube article vertically suspended in the channel, in spaced relation to a vertical wall of the channel. The article is electro-mechanically deflectable in a horizontal direction toward the conductive trace. Under certain embodiments, the vertically suspended extent of the nanotube article is defined by a thin film process. Under certain embodiments, the vertically suspended extent of the nanotube article is about 50 nanometers or less. Under certain embodiments, the nanotube article is clamped with a conducting material disposed in porous spaces between some nanotubes of the nanotube article. Under certain embodiments, the nanotube article is formed from a porous nanofabric. Under certain embodiments, the nanotube article is electromechanically deflectable into contact with the conductive trace and the contact is either a volatile state or non-volatile state depending on the device construction. Under certain embodiments, the vertically oriented device is arranged into various forms of three-trace devices. Under certain embodiments, the channel may be used for multiple independent devices, or for devices that share a common electrode.
摘要翻译：描述了使用垂直布置的纳米制品的机电开关和存储单元及其制造方法。机电装置包括具有主要水平表面和形成在其中的通道的结构。通道中有导电迹线; 以及垂直悬挂在所述通道中的与所述通道的垂直壁成间隔开的纳米管制品。该物品在水平方向上可电导向导电迹线偏转。在某些实施方案中，纳米管制品的垂直悬浮程度由薄膜工艺限定。在某些实施方案中，纳米管制品的垂直悬浮程度为约50纳米或更小。在某些实施例中，纳米管制品被夹持在布置在纳米管制品的一些纳米管之间的多孔空间中的导电材料上。在某些实施方案中，纳米管制品由多孔纳米纤维形成。在某些实施例中，取决于器件结构，纳米管制品在机电上可偏转成与导电迹线接触，并且触点是易失性状态或非易失性状态。在某些实施例中，垂直取向的装置被布置成各种形式的三轨迹装置。在某些实施例中，信道可以用于多个独立设备，或者可以用于共享公共电极的设备。

47. 发明申请

US20060250843A1 Non-volatile-shadow latch using a nanotube switch 有权
标题翻译：使用纳米管开关的非易失性阴影锁存器
公开(公告)号：US20060250843A1
公开(公告)日：2006-11-09
申请号：US11280599
申请日：2005-11-15
申请人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X.M. Huang
发明人： Claude Bertin , Frank Guo , Thomas Rueckes , Steven Konsek , Mitchell Meinhold , Max Strasburg , Ramesh Sivarajan , X.M. Huang
IPC分类号： G11C14/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C13/0033 , G11C14/00 , Y10S977/943
摘要： A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.
摘要翻译：非易失性存储单元包括：易失性存储装置，其响应于电刺激而存储对应的逻辑状态; 以及耦合到所述易失性存储装置的影子存储装置。影子存储装置响应于电刺激而接收和存储对应的逻辑状态。影子存储装置包括存储影子装置的相应状态的非易失性纳米管开关。

48. 发明申请

US20060237749A1 Nanoscopic wire-based devices and arrays 审中-公开
公开(公告)号：US20060237749A1
公开(公告)日：2006-10-26
申请号：US11284350
申请日：2005-11-21
申请人： Charles Lieber , Thomas Rueckes , Ernesto Joselevich , Kevin Kim
发明人： Charles Lieber , Thomas Rueckes , Ernesto Joselevich , Kevin Kim
IPC分类号： H01L27/10
CPC分类号： G11C23/00 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , G11C13/025 , G11C2213/16 , G11C2213/72 , G11C2213/77 , G11C2213/81 , H01H1/0094 , H01L27/10 , H01L27/285 , H01L51/0048 , H01L51/0052 , H01L51/0595 , Y10S977/75 , Y10S977/762 , Y10S977/843 , Y10S977/932 , Y10S977/936 , Y10S977/943
摘要： Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.

49. 发明申请

US20060231865A1 Electromechanical three-trace junction devices 有权
公开(公告)号：US20060231865A1
公开(公告)日：2006-10-19
申请号：US11454216
申请日：2006-06-15
申请人： Thomas Rueckes , Brent Segal , Claude Bertin
发明人： Thomas Rueckes , Brent Segal , Claude Bertin
IPC分类号： H01L27/10 , H01L29/73
CPC分类号： G11C11/56 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/77 , H01H1/0094 , Y10S977/742 , Y10S977/932 , Y10S977/936 , Y10S977/943
摘要： Three-trace electromechanical devices and methods of using same are described. The device of the present invention includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. The nanotube ribbon is capable of maintaining its position after removing an electrical stimulus applied to at least one of the first and second electrically conductive elements. Such devices may be formed into arrays of cells. One of the conductive elements may be used to create an attractive force to cause the nanotube ribbon to contact a conductive element, and the other conductive element may be used to create an attractive force to pull the nanotube ribbon from contact with the contacted conductive element. The electrically conductive traces may be aligned or unaligned with one another.

50. 发明授权

US07075141B2 Four terminal non-volatile transistor device 有权
标题翻译：四端子非易失性晶体管器件
公开(公告)号：US07075141B2
公开(公告)日：2006-07-11
申请号：US10811191
申请日：2004-03-26
申请人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Thomas Rueckes , Brent M. Segal , Bernard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L27/10 , H01L29/788
CPC分类号： G11C23/00 , B82Y10/00 , G11C13/025 , G11C16/0416 , G11C2213/17 , H01L27/115 , H01L29/7881 , Y10S977/708 , Y10S977/932
摘要： A four terminal non-volatile transistor device. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A floating gate structure is made of at least one of semiconductive or conductive material and is disposed over the channel region. A control gate is made of at least one of semiconductive or conductive material and is in electrical communication with a respective terminal. An electromechanically-deflectable nanotube switching element is in electrical communication with one of the floating gate structure and the control gate structure, and is positioned to be electromechanically deflectable into contact with the other of the floating gate structure and the control gate structure. When the nanotube switching element is in communication with both the control gate and the floating gate, the control gate may be used to modulate the conductivity of the channel region. The nanotube switching element may be formed from a porous fabric of a monolayer of single-walled carbon nanotubes. Under certain embodiments, the nanotube article is suspended vertically in relation to the horizontal substrate. Under certain embodiments, a release gate and release node are positioned in spaced relation to the nanotube switching element, and, in response to a signal on the release node, the release gate electromechanically deflects the nanotube switching element out of contact with the one of the control gate and floating gate. Under certain embodiments, the contact between the nanotube switching element and the one of the control gate and floating gate is a non-volatile state. Under certain embodiments, the device occupies an area of 8F2.
摘要翻译：四端非易失性晶体管器件。非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。第二半导体类型的材料的沟道区域设置在源区和漏区之间。浮栅结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上。控制门由半导体或导电材料中的至少一种制成，并与相应的端子电连通。机电可偏转的纳米管开关元件与浮动栅极结构和控制栅极结构中的一个电连通，并且被定位成机电可偏转地与浮动栅极结构和控制栅极结构中的另一个接触。当纳米管开关元件与控制栅极和浮置栅极两者连通时，控制栅极可用于调制沟道区的导电性。纳米管切换元件可以由单壁碳纳米管单层的多孔织物形成。在某些实施例中，纳米管制品相对于水平基底垂直悬挂。在某些实施例中，释放栅极和释放节点以与纳米管开关元件隔开的关系定位，并且响应于释放节点上的信号，释放门电磁机械地使纳米管开关元件偏转与控制门和浮动门。在某些实施例中，纳米管开关元件与控制栅极和浮置栅极之间的接触是非易失性状态。在某些实施例中，该装置占据8F 2的面积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式