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81. 发明授权

US07334878B2 Liquid ejection head and liquid ejection apparatus 失效
标题翻译：液体喷射头和液体喷射装置
公开(公告)号：US07334878B2
公开(公告)日：2008-02-26
申请号：US11218221
申请日：2005-09-01
申请人： Takeo Eguchi , Shogo Ono , Takaaki Miyamoto , Kazuyasu Takenaka
发明人： Takeo Eguchi , Shogo Ono , Takaaki Miyamoto , Kazuyasu Takenaka
IPC分类号： B41J2/05
CPC分类号： B41J2/1404 , B41J2/14056 , B41J2/14145 , B41J2002/14387 , B41J2202/20
摘要： A liquid ejection head includes a plurality of liquid ejection elements arrayed in a flat area on a substrate. Each liquid ejection element includes a liquid chamber, a heating element disposed in the liquid chamber, and a nozzle. The heating elements are disposed alternately on a first and second lines spaced by δ in a zigzag fashion. Each liquid chamber is formed to have a U-like shape in horizontal cross section such that a wall thereof surrounds three sides of a heating element disposed in each liquid chamber. A gap Wx is formed between each two adjacent liquid chambers located on the second line, and a gap Wy is formed between the liquid chambers located on the first line and the liquid chambers located on the second line. The gaps Wx serve as first common flow channels, and the gap Wy serves as a second common flow channel.
摘要翻译：液体喷射头包括排列在基板上的平坦区域中的多个液体喷射元件。每个液体喷射元件包括液体室，设置在液体室中的加热元件和喷嘴。加热元件交替地设置在以锯齿形方式间隔三角形的第一和第二线上。每个液体室形成为具有水平横截面的U形形状，使得其壁围绕设置在每个液体室中的加热元件的三侧。在位于第二线路的两个相邻的液体室之间形成间隙Wx，并且在位于第一线路上的液体室和位于第二管线上的液体室之间形成间隙Wy。间隙Wx用作第一公共流动通道，间隙Wy用作第二公共流动通道。

82. 发明授权

US07332992B2 Transformer 失效
标题翻译：变压器
公开(公告)号：US07332992B2
公开(公告)日：2008-02-19
申请号：US11726658
申请日：2007-03-22
申请人： Kenji Iwai
发明人： Kenji Iwai
IPC分类号： H01F27/28
CPC分类号： H01F27/255 , H01F30/06
摘要： Disclosed herein is a transformer including: an iron core; and a winding wound around the iron core; wherein the iron core includes a column-shaped output side iron core part, a plurality of column-shaped input side iron core parts, and a connecting iron core part, the winding includes a plurality of primary windings, a secondary winding, and generated magnetic fluxes.
摘要翻译：本文公开了一种变压器，包括：铁芯; 绕铁心缠绕; 其特征在于，所述铁芯包括柱状输出侧铁芯部，多个列状输入侧铁芯部和连接铁心部，所述绕组包括多个初级绕组，次级绕组和产生的磁性助焊剂

83. 发明授权

US07324033B2 Digital-to-analog converter, analog-to-digital converter, and semiconductor device 失效
标题翻译：数模转换器，模拟 - 数字转换器和半导体器件
公开(公告)号：US07324033B2
公开(公告)日：2008-01-29
申请号：US11526512
申请日：2006-09-25
申请人： Go Asayama , Noriyuki Fukushima , Yoshikazu Nitta , Yoshinori Muramatsu , Kiyotaka Amano
发明人： Go Asayama , Noriyuki Fukushima , Yoshikazu Nitta , Yoshinori Muramatsu , Kiyotaka Amano
IPC分类号： H03M1/66
CPC分类号： H03M1/66 , H03M1/0863 , H03M1/123 , H03M1/34 , H03M1/56 , H03M1/664 , H03M1/687 , H03M1/745 , H03M1/747
摘要： A DA conversion device includes the following elements. A higher-bit current source cell portion includes uniformly weighted higher-bit current source cells to generate an identical constant current. A lower-bit current source cell portion includes a lower-bit current source cells that are weighted to generate 1/two-to-the-power-of-certain-numbers constant currents. A constant current source selection controller includes a lower-bit controller having a scaler that uses clocks scaled down to 1/two-to-the-power-of-certain-numbers to select the lower-bit current source cells, and a higher-bit controller having shift registers and using a signal indicating a carry bit or a borrow bit used in the lower-bit controller to sequentially activate shift outputs of the shift registers, and uses the shift outputs to select the higher-bit current source cells. Constant current outputs of the selected current source cells are added and output so that an output current corresponding to the digital input signal is obtained.
摘要翻译： DA转换装置包括以下元件。较高位的电流源单元部分包括均匀加权的较高位电流源单元以产生相同的恒定电流。低位电流源单元部分包括被加权以产生特定数目的恒定电流的2/2的功率的低位电流源单元。恒定电流源选择控制器包括具有缩放器的低位控制器，该定标器使用按比例缩小到1/2到特定数目的功率的时钟来选择低位电流源单元，位控制器具有移位寄存器并且使用指示在低位控制器中使用的进位位或借位位的信号来顺序地激活移位寄存器的移位输出，并且使用移位输出来选择较高位电流源单元。添加并输出所选择的电流源单元的恒定电流输出，从而获得与数字输入信号相对应的输出电流。

84. 发明授权

US07321508B2 Magnetic memory device and method for production thereof 失效
标题翻译：磁记忆装置及其制造方法
公开(公告)号：US07321508B2
公开(公告)日：2008-01-22
申请号：US11495090
申请日：2006-07-28
申请人： Makoto Motoyoshi
发明人： Makoto Motoyoshi
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16
摘要： A magnetic memory device in which the memory cell of MRAM is reduced in size, and a method for producing the magnetic memory device are provided. The lower wiring is formed below the word line. The connecting hole and the plug connected to it are provided. The reading wiring and the lower layer wiring are connected through this plug. Alternatively, the local wiring is provided in the connecting hole and the reading wiring and the lower layer wiring are connected. In this way it is possible to form the connecting hole close to the word line, and hence it is possible to reduce the cell size in the direction along the bit line.
摘要翻译：提供其中MRAM的存储单元尺寸减小的磁存储器件，以及用于制造磁存储器件的方法。下部布线形成在字线下方。提供连接孔和与之相连的插头。阅读布线和下层布线通过此插头连接。或者，局部布线设置在连接孔中，并且读取布线和下层布线被连接。以这种方式，可以形成靠近字线的连接孔，因此可以沿着位线的方向减小单元尺寸。

85. 发明授权

US07319271B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07319271B2
公开(公告)日：2008-01-15
申请号：US11341067
申请日：2006-01-27
申请人： Ryuichi Kanamura
发明人： Ryuichi Kanamura
IPC分类号： H01L23/48
CPC分类号： H01L21/76835 , H01L21/76808 , H01L21/76811 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a semiconductor device having a multi-layer wiring structure includes a plurality of wiring layers laminated on a substrate, the wiring layers each including a buried wiring and a via formed by filling with a conductive material the inside of a wiring trench formed on the face side of a layer insulation film and a contact hole provided at a bottom portion of the wiring trench. The layer insulation films constituting the plurality of wiring layers are so configured that the layer insulation films are changed in the magnitude of mechanical strength alternately on a wiring layer basis in the lamination direction of the wiring layers.
摘要翻译：本发明公开了具有层叠在基板上的多层布线层的多层布线结构的半导体装置，所述布线层各自包括掩埋布线和通过在导电材料上填充形成的布线沟槽的内部而形成的通孔，层绝缘膜的表面侧和设置在布线沟槽的底部的接触孔。构成多个布线层的层间绝缘膜被构造为使层间绝缘膜在布线层的层叠方向上基于布线层交替地改变机械强度的大小。

86. 发明授权

US07307941B2 Optical recording medium having substantially uniform interlayer structure 失效
标题翻译：具有基本均匀的层间结构的光记录介质
公开(公告)号：US07307941B2
公开(公告)日：2007-12-11
申请号：US10478066
申请日：2003-03-20
申请人： Takeshi Yamasaki , Tomomi Yukumoto
发明人： Takeshi Yamasaki , Tomomi Yukumoto
IPC分类号： G11B17/00 , B32B9/00
CPC分类号： G11B7/24038 , G11B7/26 , Y10T428/21
摘要： An optical recording medium capable of suppressing film thickness irregularity of interlayer between a plurality of optical recording layers and effects of warps of a transfer substrate and arising of dusts and burrs problems, etc. and a method of producing the optical recording medium are provided. An optical recording medium has a structure wherein at least two optical recording layers (11, 13) stacked via an interlayer 12 and a light transmitting layer 14 provided on the optical recording layer are provided at least one surface of a medium substrate 10, for performing recording and reproducing by irradiating a light to the optical recording layers (11, 13) through the light transmitting layer 14, and the interlayer includes at least one layer of ultraviolet curing resin film made to be a film in advance and is a film formed with an uneven shape corresponding to a recording pit or an uneven shape (12p) to be a guide groove on its surface and cured.
摘要翻译：提供能够抑制多个光学记录层之间的层间膜的膜厚不均匀性和转印基板的翘曲的影响并且由于灰尘和毛刺问题引起的光记录介质等以及制造该光学记录介质的方法。光记录介质具有以下结构：在介质基板10的至少一个表面上设置有经由中间层12堆叠的至少两个光记录层（11,13）和设置在光记录层上的透光层14，用于执行通过透光层14向光记录层（11,13）照射光进行记录和再现，并且中间层包括预先形成为膜的至少一层紫外线固化树脂膜和形成有膜对应于记录坑或不平坦形状（12p）的不平坦形状作为其表面上的引导槽并固化。

87. 发明授权

US07294873B2 X-Y address type solid state image pickup device and method of producing the same 有权
标题翻译： X-Y地址型固体摄像装置及其制造方法
公开(公告)号：US07294873B2
公开(公告)日：2007-11-13
申请号：US10192409
申请日：2002-07-10
申请人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
发明人： Ryoji Suzuki , Keiji Mabuchi , Tomonori Mori
IPC分类号： H01L27/148
CPC分类号： H01L27/1464 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L31/02164 , H01L31/0232 , H01L31/02327
摘要： In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
摘要翻译：在由CMOS图像传感器表示的X-Y地址型固体摄像装置中，采用背面光接收型像素结构，其中布线层设置在其中形成有光电二极管的硅层的一侧。并且从硅层的另一侧即从与布线层相反的一侧（背面）吸收可见光。可以在不考虑光接收表面的情况下进行布线，并且增强像素的布线自由度。

88. 发明授权

US07285905B2 Organic electroluminescence device comprising a silver alloy anode and method of manufacturing the same 有权
标题翻译：包含银合金阳极的有机电致发光器件及其制造方法
公开(公告)号：US07285905B2
公开(公告)日：2007-10-23
申请号：US10399030
申请日：2002-06-25
申请人： Koji Hanawa , Jiro Yamada , Takashi Hirano
发明人： Koji Hanawa , Jiro Yamada , Takashi Hirano
IPC分类号： H01J1/62
CPC分类号： H01L51/5218 , C22C5/06 , C22C5/08 , H01L51/5012 , H01L51/5088 , H01L51/5206 , H01L51/5221 , H01L51/5225 , H01L51/5231 , H01L51/5234 , H01L51/5262 , H01L51/5265 , H01L2251/301 , H01L2251/308 , H01L2251/5315
摘要： Provided are an organic electroluminescence device capable of enhancing reflectance of an anode, thereby resulting in improved light-emitting efficiency and a method of manufacturing the same. An anode (12), a thin film layer for hole injection (13), an insulating layer (14), an organic layer (15) including a luminescent layer (15C) and a cathode (16) including a semi-transparent electrode (16A) are laminated in order on a substrate (11). The anode (12) comprises silver which is a metal with high reflectance or an alloy including silver, and the thin film layer for hole injection (13) comprises chromium oxide or the like. Light generated in the luminescent layer (15C) is multiply reflected between the anode (12) and the semi-transparent electrode (16A) to be emitted from the cathode (16). As the reflectance of the anode (12) is enhanced, the light generated in the luminescent layer (15C) can be efficiently emitted. An alloy comprised in the anode (12) preferably includes silver, palladium and copper, and a silver content is preferably 50% by mass or over.
摘要翻译：提供能够提高阳极反射率的有机电致发光器件，从而提高发光效率及其制造方法。阳极（12），用于空穴注入的薄膜层（13），绝缘层（14），包括发光层（15C）的有机层（15）和包括半透明电极（16A）依次层叠在基板（11）上。阳极（12）包括银，其是具有高反射率的金属或包括银的合金，并且用于空穴注入的薄膜层（13）包括氧化铬等。在发光层（15C）中产生的光在阳极（12）和半透明电极（16A）之间被反射，从阴极（16）发射。随着阳极（12）的反射率增强，可以有效地发射在发光层（15C）中产生的光。包含在阳极（12）中的合金优选包括银，钯和铜，并且银含量优选为50质量％以上。

89. 发明授权

US07285438B2 Solid-state imaging device and method for manufacturing solid-state imaging device 有权
标题翻译：固态成像装置及制造固态成像装置的方法
公开(公告)号：US07285438B2
公开(公告)日：2007-10-23
申请号：US11343496
申请日：2006-01-31
申请人： Takashi Kasuga
发明人： Takashi Kasuga
IPC分类号： H01L21/00
CPC分类号： H01L27/14843 , H01L27/14621 , H01L27/14627 , H01L27/14687 , H01L27/14806 , H01L27/14812
摘要： A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 and 14) embedded under the optical sensors (4). The semiconductor substrate (6) is constructed by laminating a support substrate (16) composed of silicon, a buffer layer (18), and a thin silicon layer (20) composed of single-crystal silicon. p− regions (26) (overflow barrier) and n-type regions (28) which function as transfer paths are formed under the optical sensors (4). The first and the second transfer electrodes (12 and 14) are disposed between the buffer layer (18) and the n-type regions (28), and an insulating film (30) is interposed between the n-type regions (28) and the first and the second transfer electrodes (12 and 14). In this structure, the light-receiving area is large since the transfer electrodes are not disposed in the front region. Accordingly, the sensitivity can be ensured even when the size of the optical sensors (4) is reduced for increasing the number of pixels.
摘要翻译：多个光学传感器（4）以矩阵图形布置在半导体衬底（6）的表面区域中，由光学传感器（4）产生的电荷由第一和第二传输电极（12和14）传送，嵌入在光学传感器（4）下面。半导体衬底（6）通过层叠由硅组成的支撑衬底（16），缓冲层（18）和由单晶硅构成的薄硅层（20）构成。在光学传感器（4）下形成有用作传输路径的p-区（26）（溢流栅）和n型区（28）。第一和第二转移电极（12和14）设置在缓冲层（18）和n型区域（28）之间，并且绝缘膜（30）插入在n型区域（28）和第一和第二转印电极（12和14）。在这种结构中，由于转印电极未设置在前部区域，所以光接收面积很大。因此，即使当光学传感器（4）的尺寸减小以增加像素数量时，也可以确保灵敏度。

90. 发明授权

US07281175B1 Readout controlling apparatus, reproducing apparatus, recording apparatus, and readout controlling method 失效
标题翻译：读出控制装置，再现装置，记录装置和读出控制方法
公开(公告)号：US07281175B1
公开(公告)日：2007-10-09
申请号：US09503140
申请日：2000-02-11
申请人： Tsuneo Hayashi , Kazuhiro Yasuda
发明人： Tsuneo Hayashi , Kazuhiro Yasuda
IPC分类号： G06F11/00
CPC分类号： G11B20/1803 , G11B2020/1853
摘要： A readout controlling apparatus for controlling reading conditions at the time of reading data coded in units of predetermined code blocks from a recording medium capable of performing error correction at a high reliability even when the playback conditions are poor by calculating an error rate using the number of bytes for which outer code error correction has been completed etc. in the error correction in an error corrector and controlling the reading conditions so that the error rate becomes small.
摘要翻译：一种读出控制装置，用于控制在从能够以高可靠性进行纠错的记录介质读取以预定代码块为单位编码的数据时的读取条件，即使当回放条件较差时，使用该数量的在错误校正器中的纠错中已经完成了外码错误校正的字节等，并且控制读取条件使得错误率变小。

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