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1. 发明授权

US09318198B2 Memory system and method of operating the same 有权
标题翻译：内存系统及其操作方法
公开(公告)号：US09318198B2
公开(公告)日：2016-04-19
申请号：US13280860
申请日：2011-10-25
申请人： Min Joong Jung , Jung Mi Shin , Wan Seob Lee
发明人： Min Joong Jung , Wan Seob Lee
IPC分类号： G06F13/00 , G06F13/28 , G11C16/04 , G11C29/00
CPC分类号： G11C16/0483 , G11C29/82
摘要： A method of operating a memory system according to an aspect of the present disclosure includes storing first data in a memory controller; storing second data in the memory controller, wherein the second data is read from a selected page of a first memory block of a memory device; and performing a program operation for storing third data, that include the first data and the second data, in a selected page of a second memory block of the memory device.
摘要翻译：根据本公开的一个方面的操作存储器系统的方法包括将第一数据存储在存储器控制器中; 将第二数据存储在存储器控制器中，其中从存储器件的第一存储器块的选定页面读取第二数据; 以及执行用于将包括第一数据和第二数据的第三数据存储在存储器件的第二存储器块的选定页面中的程序操作。

2. 发明授权

US09275904B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09275904B2
公开(公告)日：2016-03-01
申请号：US12614991
申请日：2009-11-09
申请人： Sung-Jin Whang , Moon-Sig Joo , Yong-Seok Eun , Kwon Hong , Bo-Min Seo , Kyoung-Eun Chang , Seung-Woo Shin
发明人： Sung-Jin Whang , Moon-Sig Joo , Yong-Seok Eun , Kwon Hong , Bo-Min Seo , Kyoung-Eun Chang , Seung-Woo Shin
IPC分类号： H01L21/8234 , H01L21/28 , H01L27/108 , H01L27/115 , H01L29/423 , H01L29/49
CPC分类号： H01L21/823443 , H01L21/28052 , H01L21/28114 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/31051 , H01L21/31111 , H01L21/32139 , H01L27/10873 , H01L27/11521 , H01L27/11568 , H01L29/42376 , H01L29/4933
摘要： A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成栅极图案，形成覆盖每个栅极图案的顶部和侧壁的导电层，在导电层上形成用于硅化工艺的金属层，以及硅化导电层和栅极图案使用金属层。

3. 发明授权

US09196618B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09196618B2
公开(公告)日：2015-11-24
申请号：US13290745
申请日：2011-11-07
申请人： Min Soo Yoo
发明人： Min Soo Yoo
IPC分类号： H01L29/78 , H01L27/108 , H01L21/768 , H01L21/762
CPC分类号： H01L27/10855 , H01L21/76224 , H01L21/76801 , H01L21/76897 , H01L27/10814 , H01L27/10876
摘要： A semiconductor device and a method of fabricating the same are provided, in which a full overlap between a storage node contact and an active region to solve an overlay in an etching process and an etching width of a storage node is increased to improve a processing margin. The semiconductor device includes a main gate and a device isolation structure disposed in a semiconductor device, an isolation pattern disposed over the device isolation structure, and contact plugs disposed at each side of the isolation pattern.
摘要翻译：提供一种半导体器件及其制造方法，其中增加了存储节点接触和有源区域之间的完全重叠以解决蚀刻工艺中的覆盖和存储节点的蚀刻宽度，以提高处理裕度。半导体器件包括设置在半导体器件中的主栅极和器件隔离结构，设置在器件隔离结构上的隔离图案，以及设置在隔离图案的每一侧的接触插塞。

4. 发明授权

US09159732B2 Semiconductor device with buried gate and method for fabricating the same 有权
标题翻译：具有埋栅的半导体器件及其制造方法
公开(公告)号：US09159732B2
公开(公告)日：2015-10-13
申请号：US13553307
申请日：2012-07-19
申请人： Jong-Han Shin , Jum-Yong Park
发明人： Jong-Han Shin , Jum-Yong Park
IPC分类号： H01L29/66 , H01L27/108 , H01L29/423
CPC分类号： H01L27/10876 , H01L27/10855 , H01L27/10888 , H01L29/4236
摘要： A method for fabricating a semiconductor device includes forming landing plugs over a substrate, forming a trench by etching the substrate between the landing plugs, forming a buried gate to partially fill the trench, forming a gap-fill layer to gap-fill an upper side of the buried gate, forming protruding portions of the landing plugs, and trimming the protruding portions of the landing plugs.
摘要翻译：一种用于制造半导体器件的方法包括在衬底上形成覆盖层，通过在层间塞之间蚀刻衬底形成沟槽，形成掩埋栅极以部分填充沟槽，形成间隙填充层以间隙填充上侧，形成所述着陆塞的突出部分，以及修剪所述着陆塞的突出部分。

5. 发明授权

US09105758B2 Semiconductor device including a capacitor 有权
标题翻译：包括电容器的半导体装置
公开(公告)号：US09105758B2
公开(公告)日：2015-08-11
申请号：US13289231
申请日：2011-11-04
申请人： Hyun Jung Kim
发明人： Hyun Jung Kim
IPC分类号： H01L49/02 , H01L27/108
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10855 , H01L28/75
摘要： A semiconductor device is disclosed, which reduces the depth of a metal contact so that an etching margin is increased in forming a contact hole. In addition, the semiconductor device and the method for forming the same increase a contact area between a plate electrode and a metal contact so that a power source can be more easily provided to the plate electrode. Thus, a sensing noise is reduced and a process margin is improved, resulting in improvement of device operation characteristics.
摘要翻译：公开了一种半导体器件，其减小了金属接触的深度，使得在形成接触孔时蚀刻余量增加。此外，半导体器件及其形成方法增加了平板电极和金属接触件之间的接触面积，使得电源可以更容易地提供给平板电极。因此，感测噪声降低并且处理余量得到改善，从而提高了器件操作特性。

6. 发明授权

US09070583B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09070583B2
公开(公告)日：2015-06-30
申请号：US13230787
申请日：2011-09-12
申请人： Chang Youn Hwang
发明人： Chang Youn Hwang
IPC分类号： H01L29/72 , H01L27/108 , H01L21/768
CPC分类号： H01L27/10888 , H01L21/76897 , H01L27/10855
摘要： Provided are a semiconductor device and a method of fabricating the semiconductor memory device. A contact plug is formed by wet etching. An aspect ratio of SAC is decreased and SAC fail is reduced so that a process margin is secured. The semiconductor device includes a semiconductor substrate comprising an active region and a device isolation layer defining the active region, a conductive pattern formed on the semiconductor substrate, and a nitride layer formed on the semiconductor substrate perpendicularly to the conductive pattern.
摘要翻译：提供半导体器件和制造半导体存储器件的方法。通过湿蚀刻形成接触塞。 SAC的长宽比降低，SAC故障降低，从而保证了处理余量。半导体器件包括半导体衬底，其包括有源区和限定有源区的器件隔离层，形成在半导体衬底上的导电图案，以及在半导体衬底上垂直于导电图案形成的氮化物层。

7. 发明授权

US09058878B2 Read methods of semiconductor memory device 有权
标题翻译：读取半导体存储器件的方法
公开(公告)号：US09058878B2
公开(公告)日：2015-06-16
申请号：US13341303
申请日：2011-12-30
申请人： Seiichi Aritome , Soon Ok Seo
发明人： Seiichi Aritome , Soon Ok Seo
IPC分类号： G11C16/04 , G11C11/56 , G11C16/26
CPC分类号： G11C16/0483 , G11C11/5642 , G11C16/26
摘要： A read method of a semiconductor memory device includes performing a read operation on target cells by using a first read voltage, terminating the read operation on the target cells if, as a result of the read operation on the target cells, error correction is feasible, performing a read operation on first cells next to the target cells along a first direction if, as a result of the read operation on the target cells, error correction is unfeasible, performing the read operation again on the target cells by selecting one of a plurality of read voltages in response to a result of the read operation on the first cells and by using the selected read voltage for reading data of the target cells, and terminating the read operation on the target cells if error correction is feasible.
摘要翻译：半导体存储器件的读取方法包括通过使用第一读取电压对目标单元执行读取操作，如果作为对目标单元的读取操作的结果，错误校正是可行的，则终止对目标单元的读取操作，如果作为对目标单元的读取操作的结果，误差校正是不可行的，则对目标单元的旁边的第一单元执行读取操作，通过选择多个目标单元之一对目标单元执行再次操作的读取电压，并且通过使用所选择的读取电压来读取目标单元的数据，并且如果纠错是可行的，则终止对目标单元的读取操作。

8. 发明授权

US09058432B2 Data transferring circuit and data transferring/receiving system 有权
标题翻译：数据传输电路和数据传输/接收系统
公开(公告)号：US09058432B2
公开(公告)日：2015-06-16
申请号：US13334208
申请日：2011-12-22
申请人： Geun-Il Lee
发明人： Geun-Il Lee
IPC分类号： G06F13/12 , G06F13/38 , H03M9/00
CPC分类号： G06F13/38 , G06F13/423
摘要： A data transferring circuit includes a data transferor configured to transfer data through a plurality of parallel data transfer lines, wherein the data transferor is further configured to partially invert the transferred data in response to an inversion signal, and a pattern sensor configured to enable the inversion signal when data transferred through the parallel data transfer lines is to cause three sequential lines to transfer data of a logic value through a middle one of the sequential lines and data of an inverse of the logic value through the remaining ones of the sequential lines or cause all of the transfer lines to transfer data of a same logic value.
摘要翻译：数据传送电路包括：数据传送器，被配置为通过多个并行数据传送线路传送数据，其中所述数据传送器还被配置为响应于反转信号部分地反转所传送的数据;以及图案传感器，被配置为使能反转当通过并行数据传输线路传送的数据时，信号将使三条连续的线路通过顺序线路的中间线路传输逻辑值的数据，并通过其余的连续线路传输逻辑值的倒数的数据或原因所有的传输线传输相同逻辑值的数据。

9. 发明授权

US09048218B2 Semiconductor device with buried gates and method for fabricating the same 有权
标题翻译：具有埋栅的半导体器件及其制造方法
公开(公告)号：US09048218B2
公开(公告)日：2015-06-02
申请号：US12939534
申请日：2010-11-04
申请人： Seung-Ryong Lee , Tae-Hang Ahn
发明人： Seung-Ryong Lee , Tae-Hang Ahn
IPC分类号： H01L29/732 , H01L29/423 , H01L29/165 , H01L29/78
CPC分类号： H01L29/4236 , H01L29/165 , H01L29/78 , H01L29/785
摘要： A semiconductor device includes a supplementary layer and a silicon layer stacked over a substrate, a trench penetrating the supplementary layer and the silicon layer and formed over the substrate, a gate insulation layer formed along a surface of the trench, and a buried gate formed over the gate insulation layer and filling a portion of the trench.
摘要翻译：半导体器件包括辅助层和层叠在衬底上的硅层，穿透辅助层和硅层并形成在衬底上的沟槽，沿着沟槽的表面形成的栅极绝缘层和形成在其上的掩埋栅极栅极绝缘层并填充沟槽的一部分。

10. 发明授权

US09029973B2 Image sensor and method for fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US09029973B2
公开(公告)日：2015-05-12
申请号：US12917986
申请日：2010-11-02
申请人： Sung-Won Lim , Jin-Woong Kim , Hyo-Seok Lee
发明人： Sung-Won Lim , Jin-Woong Kim , Hyo-Seok Lee
IPC分类号： H01L27/144 , H01L31/103 , H01L31/113 , H01L27/146
CPC分类号： H01L27/1461 , H01L27/1463 , H01L27/14645
摘要： An image sensor includes first impurity regions formed in a substrate, second impurity regions formed in the first impurity regions, wherein the second impurity regions has a junction with the first impurity regions, recess patterns formed over the first impurity regions in contact with the second impurity regions, and transfer gates filling the recess patterns.
摘要翻译：图像传感器包括形成在基板中的第一杂质区域，形成在第一杂质区域中的第二杂质区域，其中第二杂质区域与第一杂质区域结合，形成在与第二杂质接触的第一杂质区域上的凹陷图案区域和填充凹槽图案的传送门。

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