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1. 发明授权

US09984851B2 Ion implanter, magnetic field measurement device, and ion implantation method 有权
公开(公告)号：US09984851B2
公开(公告)日：2018-05-29
申请号：US14463041
申请日：2014-08-19
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroyuki Kariya
IPC分类号： H01J37/317 , H01J37/147 , H01J37/24 , G01R33/07
CPC分类号： H01J37/243 , G01R33/07 , G01R33/072 , H01J37/05 , H01J37/147 , H01J37/3171 , H01J2237/055 , H01J2237/057 , H01J2237/152 , H01J2237/24514 , H01J2237/248 , H01J2237/3045
摘要： An ion implanter includes an energy analyzer electromagnet provided between an ion source and a processing chamber. The energy analyzer electromagnet includes a Hall probe configured to generate a measurement output in response to a deflecting magnetic field and an NMR probe configured to generate an NMR output. A control unit of the ion implanter includes a magnetic field measurement unit configured to measure the deflecting magnetic field in accordance with a known correspondence between the deflecting magnetic field and the measurement output, a magnetic field determination unit configured to determine the deflecting magnetic field from the NMR output, and a Hall probe calibration unit configured to update the known correspondence by using the deflecting magnetic field determined from the NMR output and a new measurement output of the Hall probe corresponding to the determined deflecting magnetic field.

2. 发明申请

US20150069261A1 METHOD FOR TRANSMITTING A BROADBAND ION BEAM AND ION IMPLANTER 有权
标题翻译：用于发射宽带离子束和离子植入物的方法
公开(公告)号：US20150069261A1
公开(公告)日：2015-03-12
申请号：US14394591
申请日：2012-08-06
申请人： Libo Peng , Huiyue Long , Junyu Xie
发明人： Libo Peng , Huiyue Long , Junyu Xie
IPC分类号： H01J37/147 , H01J37/317
CPC分类号： H01J37/1472 , H01J37/05 , H01J37/147 , H01J37/1475 , H01J37/3171 , H01J2237/055 , H01J2237/057 , H01J2237/152
摘要： A method for transmitting a broadband ion beam (100) and an ion implanter adopt an analyzing magnetic field (1), a calibration magnetic field (2) and an analyzing grating (6) to transmit a broadband ion beam. If the analyzing magnetic field (1) enables the broadband ion beam (100) emitted into the analyzing magnetic field from an incident face (101) thereof to be deflected anticlockwise in a horizontal direction, the calibration magnetic field (2) enables an ion beam diffusing again after passing through the analyzing grating (6) to be deflected clockwise in the horizontal direction; if the analyzing magnetic field (1) enables the broadband ion beam (100) emitted into the analyzing magnetic field from the incident face (101) thereof to be deflected clockwise in the horizontal direction, the calibration magnetic field (2) enables an ion beam diffusing again after passing through the analyzing grating (6) to be deflected anticlockwise in the horizontal direction. The analyzing magnetic field (1) and the calibration magnetic field (2) enable the ion beam to be deflected along different directions in the horizontal direction, so that distribution of the required ions in the broadband ion beam (100) when emitted out of the calibration magnetic field (2) from an emergence face (202) thereof is the same as the distribution when being emitted into the analyzing magnetic field.
摘要翻译：用于传输宽带离子束（100）和离子注入机的方法采用分析磁场（1），校准磁场（2）和分析光栅（6）来传输宽带离子束。如果分析磁场（1）使得从其入射面（101）发射到分析磁场中的宽带离子束（100）在水平方向上逆时针偏转，则校准磁场（2）能够使离子束在通过分析光栅（6）之后再次扩散以在水平方向上顺时针偏转; 如果分析磁场（1）使得从其入射面（101）发射到分析磁场中的宽带离子束（100）能够在水平方向上顺时针偏转，则校准磁场（2）能够使离子束在通过分析光栅（6）之后再次扩散，以在水平方向上逆时针方向偏转。分析磁场（1）和校准磁场（2）使得离子束沿水平方向沿着不同的方向偏转，使得当宽带离子束（100）中发射出来时，所需离子在宽带离子束（100）中的分布来自其出射面（202）的校准磁场（2）与发射到分析磁场中时的分布相同。

3. 发明授权

US08466050B2 Method for dual energy implantation for ultra-shallow junction formation of MOS devices 有权
标题翻译：双能量注入方法用于MOS器件的超浅结结形成
公开(公告)号：US08466050B2
公开(公告)日：2013-06-18
申请号：US12830241
申请日：2010-07-02
申请人： Hanming Wu , Chia Hao Lee , John Chen
发明人： Hanming Wu , Chia Hao Lee , John Chen
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/055 , H01J2237/0825 , H01L21/2236 , H01L21/26513 , H01L29/0847 , H01L29/6659 , H01L29/7833
摘要： A method for forming a lightly doped drain (LDD) region in a semiconductor substrate. The method includes generating an ion beam of a selected species, and accelerating the ion beam, wherein the accelerated ion beam includes a first accelerated portion and a second accelerated portion. The method further includes deflecting the accelerating ion beam, wherein the first and second accelerated portions are concurrently deflected into a first path trajectory having a first deflected angle and second path trajectory having a second deflected angle. In an embodiment, the first and second path trajectories travel in the same direction, which is perpendicular to the surface region of the semiconductor wafer, and the first deflected angle is greater than the second deflected angle. In an embodiment, the selected species may include an n-type ion comprising phosphorous (P), arsenic (As), or antimony (Sb).
摘要翻译：一种在半导体衬底中形成轻掺杂漏极（LDD）区域的方法。该方法包括产生所选物种的离子束并加速离子束，其中加速离子束包括第一加速部分和第二加速部分。该方法还包括偏转加速离子束，其中第一和第二加速部分同时偏转到具有第一偏转角的第一路径轨迹和具有第二偏转角的第二路径轨迹。在一个实施例中，第一和第二路径轨迹在与半导体晶片的表面区域垂直的相同方向上行进，并且第一偏转角度大于第二偏转角度。在一个实施方案中，所选择的物质可以包括包含磷（P），砷（As）或锑（Sb）的n型离子。

4. 发明申请

US20130001414A1 SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION 审中-公开
标题翻译：用于生产用于高通量运行的质量分析离子束的系统和方法
公开(公告)号：US20130001414A1
公开(公告)日：2013-01-03
申请号：US13175404
申请日：2011-07-01
申请人： Victor M. Benveniste , Frank Sinclair , Svetlana Radovanov , Bon-Woong Koo
发明人： Victor M. Benveniste , Frank Sinclair , Svetlana Radovanov , Bon-Woong Koo
IPC分类号： H01J49/10
CPC分类号： H01J37/05 , H01J37/1472 , H01J37/3171 , H01J49/30 , H01J2237/055 , H01J2237/057
摘要： A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.
摘要翻译：用于生产用于植入工件的质量分析离子束的系统包括具有一组具有孔的纵向轴线的孔的抽出板。该组孔被构造成从离子源提取离子以形成多个子束。该系统还包括分析磁体区域，其被配置为提供磁场以沿着大致垂直于孔的纵向轴线的第一方向偏转子束中的离子。该系统还包括质量分析板，该质量分析板具有一组孔口，其被配置为透射具有第一质量/带电比的第一离子种类并阻挡具有第二质量/加料比的第二离子种类和被配置为相对于质量分析板沿第一方向。

5. 发明申请

US20100327180A1 BEAM QUALITY IN FIB SYSTEMS 有权
标题翻译： FIB系统中的光束质量
公开(公告)号：US20100327180A1
公开(公告)日：2010-12-30
申请号：US12494024
申请日：2009-06-29
申请人： Gregory A. Schwind , Jonathan H. Orloff
发明人： Gregory A. Schwind , Jonathan H. Orloff
IPC分类号： H01J3/14
CPC分类号： H01J37/3056 , H01J37/05 , H01J37/147 , H01J2237/053 , H01J2237/055 , H01J2237/057 , H01J2237/3174 , H01J2237/31745 , H01J2237/31749
摘要： Applicants have found that the asymmetrical energy distribution of ions from an ion source allow chromatic aberration to be reduced by filtering ions in the low energy beam tail without significantly reducing processing time. A preferred embodiment includes within an ion beam column a filter that removes the low energy ions from the beam.
摘要翻译：申请人已经发现离子源的离子的不对称能量分布允许通过在低能量束尾部过滤离子来降低色差，而不会显着缩短处理时间。一个优选的实施例在离子束列内包括从梁中去除低能量离子的过滤器。

6. 发明授权

US07635850B2 Ion implanter 失效
标题翻译：离子注入机
公开(公告)号：US07635850B2
公开(公告)日：2009-12-22
申请号：US11870333
申请日：2007-10-10
申请人： Takatoshi Yamashita , Tadashi Ikejiri , Kohei Tanaka , Weijiang Zhao , Hideyuki Tanaka
发明人： Takatoshi Yamashita , Tadashi Ikejiri , Kohei Tanaka , Weijiang Zhao , Hideyuki Tanaka
IPC分类号： H01J37/317 , H01J37/147 , H01J3/14
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/047 , H01J2237/055 , H01J2237/12 , H01J2237/15
摘要： An analyzing electromagnet constituting an ion implanter has a first inner coil, a second inner coil, three first outer coils, three second outer coils, and a yoke. The inner coils are saddle-shaped coils cooperating with each other to generate a main magnetic field which bends an ion beam in the X direction. Each of the outer coils is a saddle-shaped coil which generates a sub-magnetic field correcting the main magnetic field. Each of the coils has a configuration where a notched portion is disposed in a fan-shaped cylindrical stacked coil configured by: winding a laminations of an insulation sheet and a conductor sheet in multiple turn on an outer peripheral face of a laminated insulator; and forming a laminated insulator on an outer peripheral face.
摘要翻译：构成离子注入机的分析电磁铁具有第一内线圈，第二内线圈，三个第一外线圈，三个第二外线圈和轭。内部线圈是彼此协作的鞍形线圈，以产生在X方向上使离子束弯曲的主磁场。每个外部线圈是产生校正主磁场的子磁场的鞍形线圈。每个线圈具有其中凹口部分设置在扇形圆柱形堆叠线圈中的构造，该扇形圆柱形堆叠线圈通过以下方式构成：在层压绝缘体的外周面上多层卷绕绝缘片和导体片的叠层; 以及在外周面上形成层压绝缘体。

7. 发明申请

US20090026390A1 TECHNIQUES FOR PLASMA INJECTION 有权
标题翻译：等离子体注射技术
公开(公告)号：US20090026390A1
公开(公告)日：2009-01-29
申请号：US11781700
申请日：2007-07-23
申请人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
发明人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055
摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.
摘要翻译：公开了用于离子束空间电荷中和的等离子体注入技术。在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上离子束路径的一侧，第一侧与第二侧相对。第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

8. 发明授权

US07462843B2 Apparatus and methods for ion beam implantation 有权
标题翻译：用于离子束注入的装置和方法
公开(公告)号：US07462843B2
公开(公告)日：2008-12-09
申请号：US11209484
申请日：2005-08-22
申请人： Jiong Chen , Nicholas R. White
发明人： Jiong Chen , Nicholas R. White
IPC分类号： G21K5/10
CPC分类号： H01J37/05 , H01J37/3171 , H01J49/30 , H01J2237/055 , H01J2237/057
摘要： This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.
摘要翻译：本发明公开了一种具有多种工作模式的离子注入装置。它具有离子源和用于从其提取带状离子束的离子提取装置。离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。提供多极镜头以控制光束的均匀性和准直。本发明还公开了一种双路束线，其中第二路径包括并入能量过滤的减速系统。本发明公开了一种离子注入方法，其中注入模式可以从目标的一维扫描切换到二维扫描，并且从简单的路径切换到具有减速的s形路径。

9. 发明授权

US07414249B2 Broad energy-range ribbon ion beam collimation using a variable-gradient dipole 失效
公开(公告)号：US07414249B2
公开(公告)日：2008-08-19
申请号：US11289863
申请日：2005-11-30
申请人： Kenneth H. Purser , Norman L. Turner
发明人： Kenneth H. Purser , Norman L. Turner
IPC分类号： H01J3/20 , H01J37/14
CPC分类号： H01J37/05 , H01J37/1472 , H01J37/3171 , H01J2237/055 , H01J2237/057 , H01J2237/152 , H01J2237/31701
摘要： A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.

10. 发明申请

US20080135777A1 ION IMPLANTER 失效
标题翻译：离子植入物
公开(公告)号：US20080135777A1
公开(公告)日：2008-06-12
申请号：US11870333
申请日：2007-10-10
申请人： Takatoshi Yamashita , Tadashi Ikejiri , Kohei Tanaka , Weijiang Zhao , Hideyuki Tanaka
发明人： Takatoshi Yamashita , Tadashi Ikejiri , Kohei Tanaka , Weijiang Zhao , Hideyuki Tanaka
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/047 , H01J2237/055 , H01J2237/12 , H01J2237/15
摘要： The projection distances of connecting portions of a coil are reduced, thereby enabling the size and power consumption of an analyzing electromagnet to be reduced, and therefore the size and power consumption of an ion implanting apparatus are enabled to be reduced.[Means for Resolution] An analyzing electromagnet 200 constituting an ion implanting apparatus has a first inner coil 206, a second inner coil 212, three first outer coils 218, three second outer coils 224, and a yoke 230. The inner coils 206, 212 are saddle-shaped coils cooperating with each other to generate a main magnetic field which bends an ion beam in the X direction. Each of the outer coils 218, 224 is a saddle-shaped coil which generates a sub-magnetic field correcting the main magnetic field. Each of the coils has a configuration where a notched portion is disposed in a fan-shaped cylindrical stacked coil configured by: winding a laminations of an insulation sheet and a conductor sheet in multiple turn on an outer peripheral face of a laminated insulator; and forming a laminated insulator on an outer peripheral face,
摘要翻译：线圈的连接部分的投影距离减小，从而能够降低分析电磁铁的尺寸和功率消耗，从而能够减小离子注入装置的尺寸和功耗。 [分辨装置]构成离子注入装置的分析电磁体200具有第一内线圈206，第二内线圈212，三个第一外线圈218，三个第二外线圈224和轭230。内部线圈206,212是彼此协作的鞍形线圈，以产生在X方向上弯曲离子束的主磁场。外部线圈218,224中的每一个是产生校正主磁场的子磁场的鞍形线圈。每个线圈具有其中凹口部分设置在扇形圆柱形堆叠线圈中的构造，该扇形圆柱形堆叠线圈通过以下方式构成：在层压绝缘体的外周面上多层卷绕绝缘片和导体片的叠层; 并在外周面上形成层压绝缘体，

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