专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08828307B2 Imprint method, chip production process, and imprint apparatus 有权
标题翻译：压印方法，芯片生产工艺和压印设备
公开(公告)号：US08828307B2
公开(公告)日：2014-09-09
申请号：US12091836
申请日：2008-03-17
申请人： Shingo Okushima , Junichi Seki , Atsunori Terasaki
发明人： Shingo Okushima , Junichi Seki , Atsunori Terasaki
IPC分类号： B29C35/08 , B82Y40/00 , B29C37/00 , B29C43/00 , B29C43/02 , B82Y10/00 , G03F7/00 , B28B11/24 , H01J37/02 , B29C43/58 , B29C43/36
CPC分类号： B29C35/0888 , B29C37/0053 , B29C43/003 , B29C43/021 , B29C43/58 , B29C2035/0827 , B29C2043/025 , B29C2043/3634 , B29C2043/5833 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01J37/026 , H01J2237/0042 , H01J2237/0047
摘要： An imprint method includes contacting an imprint pattern of a mold and a resin material on a substrate. The resin material is cured by irradiating the resin material with light in a state in which the imprint pattern is in contact with the resin material. The mold is parted from the cured resin material, and gaseous molecules are irradiated, in an atmosphere in which the mold is placed, with an electromagnetic wave having a wavelength that is shorter than a wavelength of the light irradiating the resin material. The electromagnetic wave is emitted from an electrification removing light source that is provided in a lateral side of the mold. In the irradiating step, the gaseous molecules are ionized by the irradiation of the electromagnetic wave from the electrification removing light source. The ionized gaseous molecules are supplied into an atmosphere between the substrate and the mold to remove electrification of at least a portion of the mold.
摘要翻译：压印方法包括将模具的印模图案和树脂材料接触在基板上。通过在印模图案与树脂材料接触的状态下用光照射树脂材料来固化树脂材料。模具从固化的树脂材料中分出，并且在放置模具的气氛中，用比照射树脂材料的光的波长短的电磁波照射气态分子。电磁波从设置在模具的侧面的带电去除光源发射。在照射步骤中，通过从带电去除光源照射电磁波，使气态分子离子化。将电离的气态分子供入到基底和模具之间的气氛中以去除模具的至少一部分的带电。

2. 发明授权

US08742374B2 Ion implantation apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US08742374B2
公开(公告)日：2014-06-03
申请号：US13970406
申请日：2013-08-19
申请人： Nissin Ion Equipment Co., Ltd
发明人： Masao Naito
IPC分类号： H01J37/317 , H01J37/20 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/0041 , H01J2237/0042 , H01J2237/0455 , H01J2237/24542
摘要： A hybrid ion implantation apparatus that is equipped with shaping masks that shape the two edges of a ribbon-like ion beam IB in the short-side direction, a profiler that measures the current distribution in the long-side direction of the ion beam IB shaped by the shaping masks, and an electron beam supply unit that supplies an electron beam EB across the entire region in the long-side direction of the ion beam IB prior to its shaping by the shaping masks, wherein the electron beam supply unit varies the supply dose of the electron beam EB at each location in the long-side direction of the ion beam IB according to results of measurements by the profiler.
摘要翻译：一种混合离子注入装置，其配置有成形掩模，该成型掩模在短边方向上成形带状离子束IB的两个边缘，测量沿离子束IB的长边方向的电流分布的轮廓仪通过成形掩模和电子束供给单元，其在通过成形掩模进行成形之前，在离子束IB的长边方向上的整个区域提供电子束EB，其中电子束供给单元改变供给根据分析仪的测量结果，在离子束1B的长边方向上的每个位置处的电子束EB的剂量。

3. 发明授权

US07982192B2 Beam processing apparatus 有权
标题翻译：梁加工设备
公开(公告)号：US07982192B2
公开(公告)日：2011-07-19
申请号：US12106735
申请日：2008-04-21
申请人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Hiroshi Matsushita , Takanori Yagita , Yoshitaka Amano , Yoshito Fujii
发明人： Mitsukuni Tsukihara , Mitsuaki Kabasawa , Hiroshi Matsushita , Takanori Yagita , Yoshitaka Amano , Yoshito Fujii
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/0042 , H01J2237/028
摘要： In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.
摘要翻译：在包括具有两电极型偏转扫描电极的光束扫描器的光束处理装置中，光束扫描器还包括分别在两电极型偏转扫描电极的上游侧和下游侧的附近的屏蔽抑制电极组件，并具有矩形的开口用于通过带电粒子束的形状。每个屏蔽抑制电极组件是包括一片抑制电极和插入抑制电极的两片屏蔽接地电极的组装电极。两电极型偏转扫描电极的前侧部分和后侧部分被两片屏蔽接地电极屏蔽。

4. 发明申请

US20070187619A1 ELECTROMAGNET WITH ACTIVE FIELD CONTAINMENT 有权
标题翻译：具有活动场地容纳的电磁铁
公开(公告)号：US20070187619A1
公开(公告)日：2007-08-16
申请号：US11276128
申请日：2006-02-15
申请人： Peter Kellerman , Keneth Purser
发明人： Peter Kellerman , Keneth Purser
IPC分类号： H01J37/317 , H01J37/141
CPC分类号： H01J37/05 , H01J37/141 , H01J37/1472 , H01J37/3171 , H01J2237/0042 , H01J2237/057 , H01J2237/141 , H01J2237/142 , H01J2237/1508 , H01J2237/152 , H01J2237/31701 , H01J2237/31705
摘要： An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and a third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.
摘要翻译：公开了一种包括活性场容纳的电磁体和相关离子注入机系统。电磁铁在高大的间隙内提供偶极磁场，具有最小的变形和强度的降低。在一个实施例中，用于修改离子束的电磁体包括：包括六个边的铁磁盒结构; 所述铁磁盒结构的第一侧和第二相对侧中的每一个中的开口用于使所述离子束通过其中; 以及多个载流线，其具有沿铁磁箱结构的内表面的路径，内表面包括第一侧和第二相对侧，以及第三侧和第四相对侧，其中多个载流电线定位成绕过第一和第二相对侧的每个开口。

5. 发明授权

US08729466B1 Aberration-corrected and energy-filtered low energy electron microscope with monochromatic dual beam illumination 有权
公开(公告)号：US08729466B1
公开(公告)日：2014-05-20
申请号：US13804066
申请日：2013-03-14
申请人： Marian Mankos
发明人： Marian Mankos
IPC分类号： H01J37/05 , G01N23/225 , H01J37/29 , H01J37/153
CPC分类号： H01J37/026 , H01J37/04 , H01J37/285 , H01J37/29 , H01J2237/0042 , H01J2237/0044 , H01J2237/0492 , H01J2237/05 , H01J2237/1534 , H01J2237/2538
摘要： One embodiment relates to an apparatus for correcting aberrations introduced when an electron lens forms an image of a specimen and simultaneously forming an electron image using electrons with a narrow range of electron energies from an electron beam with a wide range of energies. A first electron beam source is configured to generate a lower energy electron beam, and a second electron beam source is configured to generate a higher energy electron beam. The higher energy beam is passed through a monochromator comprising an energy-dispersive beam separator, an electron mirror and a knife-edge plate that removes both the high and low energy tail from the propagating beam. Both the lower and higher energy electron beams are deflected by an energy-dispersive beam separator towards the specimen and form overlapping illuminating electron beams. An objective lens accelerates the electrons emitted or scattered by the sample. The electron beam leaving the specimen is deflected towards a first electron mirror by an energy-dispersive beam separator, which introduces an angular dispersion that disperses the electron beam according to its energy. A knife-edge plate, located between the beam separator and first electron mirror, is inserted that removes all of the beam with energy larger and smaller than a selected energy and filters the beam according to energy. One or more electron lenses focus the electron beam at the reflection surface of the first electron mirror so that after the reflection and another deflection by the same energy-dispersive beam separator the electron beam dispersion is removed. The dispersion-free and energy-filtered electron beam is then reflected in a second electron mirror which corrects one or more aberrations of the objective lens. After the second reflection, electrons are deflected by the magnetic beam separator towards the projection optics which forms a magnified, aberration-corrected, energy-filtered image on a viewing screen.

6. 发明申请

US20060289755A1 Electron microscope application apparatus and sample inspection method 失效
公开(公告)号：US20060289755A1
公开(公告)日：2006-12-28
申请号：US11442566
申请日：2006-05-30
申请人： Hikaru Koyama , Hiroshi Makino , Mitsugu Sato
发明人： Hikaru Koyama , Hiroshi Makino , Mitsugu Sato
IPC分类号： G21K7/00
CPC分类号： H01J37/026 , H01J2237/0042 , H01J2237/0047 , H01J2237/2817
摘要： A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.

7. 发明申请

US20060169911A1 Electron confinement inside magent of ion implanter 有权
标题翻译：离子注入机内部的电子限制
公开(公告)号：US20060169911A1
公开(公告)日：2006-08-03
申请号：US11272193
申请日：2005-11-10
申请人： Anthony Renau , Joseph Olson , Shengwu Chang , James Buff
发明人： Anthony Renau , Joseph Olson , Shengwu Chang , James Buff
IPC分类号： H01J1/50
CPC分类号： H01J37/1475 , H01J37/026 , H01J37/3171 , H01J2237/0041 , H01J2237/0042 , H01J2237/055
摘要： A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.
摘要翻译：公开了一种用于通过将电子限制在其磁性区域内以减少电子损失并因此提高低能量束的传输效率来改进邻近离子注入机的磁体的空间电荷中和的方法和装置。提供了一种用于离子注入机的磁体的磁极构件，其包括具有与磁极构件相邻形成磁场浓度的多个磁场浓度构件的外表面。遇到这种增加的磁场的电子沿着相同的磁场线被击退，而不是允许逃逸。还提供了包括磁极的分析器磁体和离子注入机，从而实现了在离子注入机中提高低能量离子束空间电荷中和的方法。

8. 发明授权

US06872959B2 Thermoelectron generating source and ion beam radiating apparatus with the same 失效
标题翻译：热电子发生源和离子束辐射装置相同
公开(公告)号：US06872959B2
公开(公告)日：2005-03-29
申请号：US10638528
申请日：2003-08-12
申请人： Yasuaki Nishigami
发明人： Yasuaki Nishigami
IPC分类号： G21G5/00 , H01J3/02 , H01J37/02 , H01J37/06 , H01J37/317
CPC分类号： H01J37/06 , H01J3/02 , H01J37/3171 , H01J2237/0042 , H01J2237/0044
摘要： A thermoelectron generating source including a facial main cathode for emitting thermoelectrons by being heated from behind, a filament for heating the main cathode from behind to emit the thermoelectrons, an extraction electrode for extracting the thermoelectrons emitted from the main cathode under an electric field, the extraction electrode being provided near the front of the main cathode, and two deflecting electrodes and disposed on the left and right sides near the front of the extraction electrode to carry the extraction electrode. The potentials of the two deflecting electrodes are kept in a relation VL>VR≧0, where the potential of one deflecting electrode is VL and the potential of the other deflecting electrode is VR.
摘要翻译：一种热电子发生源，包括通过从后面加热来发射热电子的面部主阴极，用于从后面加热主阴极以发射热电子的灯丝;用于在电场下从主阴极发射的热电子的提取电极，提供电极设置在主阴极前部附近，以及两个偏转电极，并设置在靠近提取电极前部的左侧和右侧，以承载提取电极。两个偏转电极的电位保持在VL> VR> = 0的关系中，其中一个偏转电极的电位为VL，另一个偏转电极的电位为VR。

9. 发明申请

US20050035291A1 Dual beam system 有权
标题翻译：双光束系统
公开(公告)号：US20050035291A1
公开(公告)日：2005-02-17
申请号：US10889967
申请日：2004-07-13
申请人： Raymond Hill , Colin Sanford , Lawrence Scipioni , Mark DiManna , Michael Tanguay
发明人： Raymond Hill , Colin Sanford , Lawrence Scipioni , Mark DiManna , Michael Tanguay
IPC分类号： H01J37/141 , H01J37/02 , H01J37/08 , H01J37/26 , H01J37/28 , H01J37/30
CPC分类号： H01J37/141 , H01J37/026 , H01J37/08 , H01J2237/0042 , H01J2237/0805 , H01J2237/1405 , H01J2237/28 , H01J2237/317 , H01J2237/31749
摘要： A dual beam system includes an ion beam system and a scanning electron microscope with a magnetic objective lens. The ion beam system is adapted to operate optimally in the presence of the magnetic field from the SEM objective lens, so that the objective lens is not turned off during operation of the ion beam. An optional secondary particle detector and an optional charge neutralization flood gun are adapted to operate in the presence of the magnetic field. The magnetic objective lens is designed to have a constant heat signature, regardless of the strength of magnetic field being produced, so that the system does not need time to stabilize when the magnetic field is changed.
摘要翻译：双光束系统包括离子束系统和具有磁性物镜的扫描电子显微镜。离子束系统适于在存在来自SEM物镜的磁场的情况下最佳地操作，使得物镜在离子束操作期间不被关闭。可选的二次粒子检测器和可选的电荷中和泛喷枪适于在存在磁场的情况下操作。磁性物镜被设计成具有恒定的热信号，不管产生的磁场的强度如何，使得当磁场改变时，系统不需要时间稳定。

10. 发明授权

US5293508A Ion implanter and controlling method therefor 失效
标题翻译：离子注入机及其控制方法
公开(公告)号：US5293508A
公开(公告)日：1994-03-08
申请号：US865275
申请日：1992-04-08
申请人： Shigeru Shiratake , Hirohisa Yamamoto
发明人： Shigeru Shiratake , Hirohisa Yamamoto
IPC分类号： C23C14/48 , C23C14/54 , C23C30/00 , H01J37/24 , H01J37/317 , H01L21/265 , H05F3/04
CPC分类号： C23C8/36 , H01J37/026 , H01J37/3171 , H01J2237/0042 , H01J2237/0045 , H01J2237/1202 , H01J2237/1215 , H01J2237/20
摘要： An ion implanter encloses a semiconductor substrate adjacent to a fixing member which retains a semiconductor substrate on a supporting bed. The ion implanter includes a ring electrode for generating secondary electrons in response to incident ions and a cup-like electrode for directing the secondary ions to the semiconductor substrate. The ring electrode is negatively biased with respect to the supporting bed and the cup-like electrode surrounds the outer edge of the semiconductor substrate. The ion implanter increases the quantity of the secondary electrons produced and efficiently directs them to the semiconductor substrate. The semiconductor substrate which is electrically charged by implanting ions is neutralized, preventing dielectric breakdown from occurring in an insulating film.
摘要翻译：离子注入机包围与固定部件相邻的半导体衬底，该固定部件将半导体衬底保持在支撑床上。离子注入机包括用于响应于入射离子产生二次电子的环形电极和用于将二次离子引导到半导体衬底的杯形电极。环状电极相对于支撑床呈负偏置，杯形电极围绕半导体衬底的外边缘。离子注入机增加产生的二次电子的量并有效地将它们引导到半导体衬底。通过注入离子而带电的半导体衬底被中和，防止在绝缘膜中发生电介质击穿。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式