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1. 发明申请

US20140070230A1 USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRIER LIFETIME IN A SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：使用碳减排材料在硅碳化硅半导体器件中增加平均载体寿命
公开(公告)号：US20140070230A1
公开(公告)日：2014-03-13
申请号：US13610993
申请日：2012-09-12
申请人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, JR. , Anant Kumar Agarwal
发明人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, JR. , Anant Kumar Agarwal
IPC分类号： H01L29/16 , H01L21/02
摘要： A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.
摘要翻译：公开了半导体管芯和半导体管芯的制造工艺。半导体管芯在衬底上具有衬底和碳化硅（SiC）外延结构。 SiC外延结构至少包括已经注入到SiC外延结构的表面中的第一N型SiC层，至少第一P型SiC层和碳空位还原材料。此外，SiC外延结构已经被退火以动员碳空位还原材料以弥散基本上贯穿整个SiC外延结构的碳原子，从而增加了SiC外延结构中的平均载流子寿命。

2. 发明申请

US20130184212A1 FIBRONECTIN BASED SCAFFOLD PROTEINS HAVING IMPROVED STABILITY 有权
标题翻译：基于FIBRONECTIN的SCAFFOLD蛋白具有改善的稳定性
公开(公告)号：US20130184212A1
公开(公告)日：2013-07-18
申请号：US13699458
申请日：2011-05-26
申请人： Ray Camphausen , John O'Loughlin , Bernice Yeung , Yihong Zhang
发明人： Ray Camphausen , John O'Loughlin , Bernice Yeung , Yihong Zhang
IPC分类号： C07K14/78
CPC分类号： C07K14/78 , A61K38/00 , C07K14/71 , C07K14/7155 , C07K16/2863 , C07K2317/31 , C07K2317/34 , C07K2317/94 , C07K2318/20 , C07K2319/00 , C07K2319/30
摘要： The present application provides fibronectin based scaffold proteins associated with improved stability. The application also relates to stable formulations of fibronectin based scaffold proteins and the use thereof in diagnostic, research and therapeutic applications. The application further relates to cells comprising such proteins, polynucleotides encoding such proteins or fragments thereof, and to vectors comprising such polynucleotides.
摘要翻译：本申请提供与改善的稳定性相关的基于纤连蛋白的支架蛋白。该应用还涉及基于纤维连接蛋白的支架蛋白的稳定制剂及其在诊断，研究和治疗应用中的用途。本申请还涉及包含这种蛋白质的细胞，编码这种蛋白质或其片段的多核苷酸，以及包含这种多核苷酸的载体。

3. 发明申请

US20070228708A1 Actuatable fastener 有权
公开(公告)号：US20070228708A1
公开(公告)日：2007-10-04
申请号：US11805644
申请日：2007-05-24
申请人： Homer Fogle , Eric McFarland , Robert Debbs , Craig Fischer , John O'Loughlin , Halley Stevens , Keven Thomas
发明人： Homer Fogle , Eric McFarland , Robert Debbs , Craig Fischer , John O'Loughlin , Halley Stevens , Keven Thomas
IPC分类号： B60R21/26
CPC分类号： B60R21/276 , B60R21/2035 , B60R2021/161 , B60R2021/26029
摘要： An actuatable fastener (50) includes a body (80) including a head (82) and a shank (84). The body (80) includes an interior chamber (120) partially defined by a side wall (132) extending from the head (82) into the shank (84) and an end wall (138) positioned in the shank. A member (140) is disposed in the chamber (120). An initiator (160) is actuatable to produce combustion products in the chamber (120) that act on the member (140) to move the member in a first direction in the chamber to strike the end wall (138). The member (140) strikes the end wall (138) creating a fracture (222) in the shank (84) separating at least a portion of the shank from a remainder (220) of the shank. The combustion products moving the member (150) beyond the fracture (222) at least a predetermined distance (226) to move the portion of the shank (84) at least the predetermined distance from the remainder (220) of the shank.

4. 发明授权

US07230274B2 Reduction of carrot defects in silicon carbide epitaxy 有权
标题翻译：减少碳化硅外延中的胡萝卜缺陷
公开(公告)号：US07230274B2
公开(公告)日：2007-06-12
申请号：US10790406
申请日：2004-03-01
申请人： Michael John O'Loughlin , Joseph John Sumakeris
发明人： Michael John O'Loughlin , Joseph John Sumakeris
IPC分类号： H01L29/15 , H01L29/06
CPC分类号： C30B25/02 , C03B23/02 , C30B29/36 , H01L21/02019 , H01L21/30621
摘要： Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor structure includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.
摘要翻译：通过将衬底放置在外延生长反应器中，在衬底上生长第一层外延碳化硅，中断外延碳化硅的第一层的生长，蚀刻外延碳化硅的第一层，制造脱轴衬底上的单晶碳化硅外延层第一层外延碳化硅以减小第一层的厚度，以及在第一层外延碳化硅上再生第二层外延碳化硅。胡萝卜缺陷可以通过中断外延生长过程，蚀刻生长层和再生第二层外延碳化硅的过程来终止。生长中断/蚀刻/再生长可以重复多次。碳化硅外延层具有端接在外延层内的至少一个胡萝卜缺陷。半导体结构包括在偏轴碳化硅衬底上的碳化硅外延层和在衬底和外延层之间的界面附近具有成核点的胡萝卜缺陷，并且终止在外延层内。

5. 发明授权

US06958497B2 Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures 有权
标题翻译：具有量子阱和超晶格的III族氮化物基发光二极管结构，基于III族氮化物的量子阱结构和基于III族氮化物的超晶格结构
公开(公告)号：US06958497B2
公开(公告)日：2005-10-25
申请号：US10140796
申请日：2002-05-07
申请人： David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
发明人： David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
IPC分类号： H01L33/06 , H01L33/32 , H01L29/22
CPC分类号： H01L33/06 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L33/32
摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X
摘要翻译：在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。有源区具有至少一个量子阱结构。量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。还提供了一种III族氮化物基半导体器件，其包括具有至少两个交替层的In 1 N 1 Ga 1-X N和In 1 N的纳米氮基超晶格， SUB> Y 1-Y N，其中0 <= X <1且0 <= Y <1，X不等于Y.该半导体器件可以是发光二极管与III族氮化物基活性区。有源区可以是多量子阱有源区。

6. 发明申请

US20050057027A1 Actuatable fastener 有权
标题翻译：执行紧固件
公开(公告)号：US20050057027A1
公开(公告)日：2005-03-17
申请号：US10662852
申请日：2003-09-15
申请人： Homer Fogle , Eric Mcfarland , Robert Debbs , Craig Fischer , John O'Loughlin , Halley Stevens , Keven Thomas
发明人： Homer Fogle , Eric Mcfarland , Robert Debbs , Craig Fischer , John O'Loughlin , Halley Stevens , Keven Thomas
IPC分类号： B60R21/16 , B60R21/20 , B60R21/203 , B60R21/276 , B60R21/28
CPC分类号： B60R21/276 , B60R21/2035 , B60R2021/161 , B60R2021/26029
摘要： An actuatable fastener (50) includes a body (80) including a head (82) and a shank (84). The body (80) includes an interior chamber (120) partially defined by a side wall (132) extending from the head (82) into the shank (84) and an end wall (138) positioned in the shank. A member (140) is disposed in the chamber (120). An initiator (160) is actuatable to produce combustion products in the chamber (120) that act on the member (140) to move the member in a first direction in the chamber to strike the end wall (138). The member (140) strikes the end wall (138) creating a fracture (222) in the shank (84) separating at least a portion of the shank from a remainder (220) of the shank. The combustion products moving the member (150) beyond the fracture (222) at least a predetermined distance (226) to move the portion of the shank (84) at least the predetermined distance from the remainder (220) of the shank.
摘要翻译：可致动紧固件（50）包括主体（80），其包括头部（82）和柄部（84）。主体（80）包括由从头部（82）延伸到柄部（84）中的侧壁（132）部分地限定的内部腔室（120）和定位在柄部中的端壁（138）。构件（140）设置在腔室（120）中。起动器（160）可致动以在腔室（120）中产生作用在构件（140）上的燃烧产物，以使构件在腔室中沿第一方向移动以撞击端壁（138）。构件（140）撞击端壁（138），在柄部（84）中产生断裂（222），其将柄的至少一部分与柄的余下部分（220）分开。将构件（150）超过断裂（222）移动至少预定距离（226）的燃烧产物将柄部（84）的该部分与柄的剩余部分（220）移动至少预定的距离。

7. 发明授权

US08052794B2 Directed reagents to improve material uniformity 有权
标题翻译：定向试剂，以提高材料均匀性
公开(公告)号：US08052794B2
公开(公告)日：2011-11-08
申请号：US11224374
申请日：2005-09-12
申请人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
发明人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
IPC分类号： C30B15/00 , C30B28/12
CPC分类号： C23C16/4584 , C23C16/45514 , C23C16/45563 , C30B25/02 , C30B25/12 , C30B25/14 , C30B29/36
摘要： A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.
摘要翻译：提供了一种用于局部控制半导体衬底上的外延沉积层的化学计量的方法。该方法包括：引导第一反应气体和掺杂气体穿过半导体衬底的顶表面，并将驱动气体和第二反应气体以与第一反应气体分离的方式引导基板，同时引导第二反应气体在衬底的边缘处的反应气体，以分别控制每个反应物，由此补偿和控制耗尽效应并改善衬底上所得到的外延层中的掺杂均匀性。

8. 发明申请

US20070257476A1 Inflator with improved rupture disk support 审中-公开
标题翻译：具有改善的破裂盘支架的充气器
公开(公告)号：US20070257476A1
公开(公告)日：2007-11-08
申请号：US11415685
申请日：2006-05-02
申请人： Lloyd Green , William Butler , John O'Loughlin , Halley Stevens , Katherine Desimone
发明人： Lloyd Green , William Butler , John O'Loughlin , Halley Stevens , Katherine Desimone
IPC分类号： B60R21/26
CPC分类号： B60R21/268 , B60R21/274
摘要： An inflator (40) includes a chamber (220) for storing inflation (222) fluid under pressure. A first member (82) has an inner perimeter that defines an opening (92) for discharging the inflation fluid (222). A rupturable closure member (100) extends across the opening (92) and blocks inflation fluid flow though the opening. A second member (110) supports a central portion (302) of the closure member (100) against the pressure of the inflation fluid (222) in the chamber (220). Inflation fluid (222) flows through a passageway (270) defined by an outer perimeter of the second member (110) and the inner perimeter of the first member (82). An initiator (152) ruptures the closure member (100), forming petals (254) of the closure member that deflect into the passageway (270). The petals (254) slide along an outer surface (258) of a portion (132) of the second member (110) while deflecting into the passageway (270). The portion (132) of the second member (110) is configured not to inhibit movement of the petals (254) into full engagement with an inner surface (260) the first member (82).
摘要翻译：充气机（40）包括用于在压力下储存充气（222）流体的腔室（220）。第一构件（82）具有限定用于排放充气流体（222）的开口（92）的内周边。可破裂的封闭构件（100）延伸穿过开口（92）并阻止通过开口的膨胀流体流动。第二构件（110）抵抗在腔室（220）中的充气流体（222）的压力支撑关闭构件（100）的中心部分（302）。充气流体（222）流过由第二构件（110）的外周界和第一构件（82）的内周限定的通道（270）。起动器（152）使封闭件（100）破裂，从而形成偏转到通道（270）中的封闭件的花瓣（254）。花瓣（254）沿着第二构件（110）的一部分（132）的外表面（258）滑动，同时偏转到通道（270）中。第二构件（110）的部分（132）构造成不阻止花瓣（254）与第一构件（82）的内表面（260）完全接合的运动。

9. 发明授权

US10541306B2 Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device 有权
公开(公告)号：US10541306B2
公开(公告)日：2020-01-21
申请号：US13610993
申请日：2012-09-12
申请人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, Jr. , Anant Kumar Agarwal , Alexander Suvorov
发明人： Michael John O'Loughlin , Lin Cheng , Albert Augustus Burk, Jr. , Anant Kumar Agarwal , Alexander Suvorov
IPC分类号： H01L29/16 , H01L21/02 , H01L21/322 , H01L21/265
摘要： A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

10. 发明授权

US09903046B2 Reduction of carrot defects in silicon carbide epitaxy 有权
公开(公告)号：US09903046B2
公开(公告)日：2018-02-27
申请号：US11745817
申请日：2007-05-08
申请人： Michael John O'Loughlin , Joseph John Sumakeris
发明人： Michael John O'Loughlin , Joseph John Sumakeris
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , C30B25/02 , C03B23/02 , H01L21/02 , H01L21/306 , C30B29/36
CPC分类号： C30B25/02 , C03B23/02 , C30B29/36 , H01L21/02019 , H01L21/30621
摘要： Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot defects may be terminated by the process of interrupting the epitaxial growth process, etching the grown layer and regrowing a second layer of epitaxial silicon carbide. The growth interruption/etching/regrowth may be repeated multiple times. A silicon carbide epitaxial layer has at least one carrot defect that is terminated within the epitaxial layer. A semiconductor stricture includes an epitaxial layer of silicon carbide on an off-axis silicon carbide substrate, and a carrot defect having a nucleation point in the vicinity of an interface between the substrate and the epitaxial layer and is terminated within the epitaxial layer.

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