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1. 发明申请

US20110297843A1 ION IMPLANTING APPARATUS AND DEFLECTING ELECTRODE 有权
标题翻译：离子植入装置和偏置电极
公开(公告)号：US20110297843A1
公开(公告)日：2011-12-08
申请号：US13128893
申请日：2009-08-31
申请人： Tetsuya Igo , Tadashi Ikejiri , Takatoshi Yamashita
发明人： Tetsuya Igo , Tadashi Ikejiri , Takatoshi Yamashita
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , H01J37/147 , H01J2237/24528
摘要： An ion implanting apparatus includes: an electrostatic accelerating tube for causing an ion beam extracted from an ion source to have a desirable energy, and deflecting the ion beam to be incident on a target, the electrostatic accelerating tube including deflecting electrodes provided to interpose the ion beam therebetween. The deflecting electrodes include a first deflecting electrode and a second deflecting electrode to which different electric potentials from each other are set. The second deflecting electrode is provided on a side where the ion beam is to be deflected and includes an upstream electrode provided on an upstream side of the ion beam and a downstream electrode provided apart from the upstream electrode toward a downstream side. An electric potential of the upstream electrode and an electric potential of the downstream electrode are independently set from each other.
摘要翻译：离子注入装置包括：静电加速管，用于使从离子源提取的离子束具有期望的能量，并使离子束偏转以入射到靶上，所述静电加速管包括设置成插入离子的偏转电极梁之间。偏转电极包括设置彼此不同电位的第一偏转电极和第二偏转电极。第二偏转电极设置在离子束被偏转的一侧，并且包括设置在离子束的上游侧的上游电极和从上游电极向下游侧设置的下游电极。上游电极的电位和下游电极的电位彼此独立地设定。

2. 发明申请

US20090302214A1 ION IMPLANTING APPARATUS AND METHOD OF CORRECTING BEAM ORBIT 失效
标题翻译：离子植入装置和校正光束轨迹的方法
公开(公告)号：US20090302214A1
公开(公告)日：2009-12-10
申请号：US12476836
申请日：2009-06-02
申请人： Tetsuya Igo , Takatoshi Yamashita , Tadashi Ikejiri
发明人： Tetsuya Igo , Takatoshi Yamashita , Tadashi Ikejiri
IPC分类号： B01D59/44 , H01J49/00 , A61N5/00 , G01K1/08
CPC分类号： H01J37/3171 , H01J37/1471 , H01J2237/055 , H01J2237/08 , H01J2237/1501 , H01J2237/2446 , H01J2237/24528 , H01J2237/304
摘要： An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed. A step of adjusting an analysis electromagnet current so that the beam current measured by the rear-stage beam instrument is maximum, that of processing the image data from the camera to obtain the deviation angle of the ion beam entering the analysis slit from the design beam orbit, and that of, if the deviation angle is not within an allowable range, adjusting the potential difference between the electrodes so that the ion beam is bent to a direction where the deviation angle becomes small, by the potential difference are performed one or more times until the deviation angle is within the allowable range.
摘要翻译：离子源的提取电极由第一引出电极和第二引出电极分开地构成。形成电极之间的电位差的直流电源，拍摄离子束的图像以输出离子束的图像数据的照相机，以及测量已经通过的离子束的束电流的后级光束仪器通过分析缝设置。调整分析电磁体电流使得由后级光束仪测得的光束电流最大的步骤是从相机处理图像数据以获得进入分析狭缝的离子束与设计光束的偏离角度的步骤并且如果偏离角不在允许范围内，则调整电极之间的电位差使得离子束弯曲到偏移角变小的方向，通过电位差进行一个或多个次，直到偏离角度在允许范围内。

3. 发明申请

US20060192142A1 Ion implanter, and angle measurement apparatus and beam divergence measurement apparatus for ion implanter 有权
标题翻译：离子注入机，角度测量装置和离子注入机的光束发散测量装置
公开(公告)号：US20060192142A1
公开(公告)日：2006-08-31
申请号：US11330234
申请日：2006-01-12
申请人： Takatoshi Yamashita
发明人： Takatoshi Yamashita
IPC分类号： G21G5/00
CPC分类号： H01J37/304 , H01J37/3171
摘要： An apparatus is provided which is capable of measuring an angle between a holder and an ion beam without generating particles, with a simple structure, in a short time and at high accuracy even during an implantation state. An angle measurement apparatus is configured to: measure an angle of the ion beam by measuring beam plasma produced and emitting light when the ion beam collides with residual gas, with two cameras at two positions in a beam traveling direction; measure an angle of the holder by measuring light from a linear light source provided on the holder; and thereby measure the angle between the ion beam and the holder.
摘要翻译：提供一种装置，其能够即使在植入状态期间也能够在短时间内以高精度以简单的结构测量保持器和离子束之间的角度而不产生颗粒。角度测量装置被配置为：当离子束与残留气体碰撞时，通过测量射束等离子体和发射光来测量离子束的角度，两个照相机在光束移动方向上的两个位置; 通过测量来自设置在保持器上的线性光源的光来测量保持器的角度; 从而测量离子束和保持器之间的角度。

4. 发明申请

US20060017012A1 Ion implantation apparatus 审中-公开
标题翻译：离子注入装置
公开(公告)号：US20060017012A1
公开(公告)日：2006-01-26
申请号：US11167189
申请日：2005-06-28
申请人： Takatoshi Yamashita
发明人： Takatoshi Yamashita
IPC分类号： G21G5/00
CPC分类号： H01J49/10 , H01J49/26
摘要： An ion source capable of generating only a monoatomic ion is used as an ion source, and a gas supplying section is provided between a first mass spectrograph and a second mass spectrograph. In order to irradiate a cluster molecule ion, a polyatomic molecule gas is introduced into the gas supplying section. Then, electric charges are exchanged between the monoatomic ion generated at the ion source and a polyatomic molecule gas introduced into the gas supplying section, so that the cluster molecule ion is generated. Thus, the cluster molecule ion is dissociated at the second mass spectrograph. In order to irradiate a monoatomic ion beam, a monoatomic ion generated at the ion source is irradiated without introducing a gas into the gas supplying section.
摘要翻译：使用能够仅生成单原子离子的离子源作为离子源，在第一质谱仪和第二质谱仪之间设置气体供给部。为了照射聚簇分子离子，将多原子分子气体引入气体供给部。然后，在离子源产生的单原子离子与引入气体供给部的多原子分子气体之间交换电荷，从而产生簇分子离子。因此，聚簇分子离子在第二质谱仪上解离。为了照射单原子离子束，在离子源产生的单原子离子被照射而不将气体引入气体供给部。

5. 发明申请

US20110262616A1 FAT COMPOSITION 审中-公开
标题翻译：脂肪组合物
公开(公告)号：US20110262616A1
公开(公告)日：2011-10-27
申请号：US13141708
申请日：2009-12-25
申请人： Shoji Matsumoto , Takatoshi Yamashita , Hiroshi Shiramasa
发明人： Shoji Matsumoto , Takatoshi Yamashita , Hiroshi Shiramasa
IPC分类号： A23D7/01 , A23D9/013
CPC分类号： A23D9/013
摘要： There is provided a fat composition that makes possible to prepare stir-fried food, deep-fried food or mayonnaise. The fat composition contains an emulsifier having an HLB of not more than 5 in an amount of 0.1 to 3% by weight.
摘要翻译：提供了可以制备油炸食品，油炸食品或蛋黄酱的脂肪组合物。该脂肪组合物含有0.1〜3重量％的HLB为5以下的乳化剂。

6. 发明申请

US20110139613A1 REPELLER STRUCTURE AND ION SOURCE 有权
标题翻译：破碎机结构和离子源
公开(公告)号：US20110139613A1
公开(公告)日：2011-06-16
申请号：US12877170
申请日：2010-09-08
申请人： Tadashi IKEJIRI , Tetsuya Igo , Takatoshi Yamashita
发明人： Tadashi IKEJIRI , Tetsuya Igo , Takatoshi Yamashita
IPC分类号： C23C14/34 , H01J37/08
CPC分类号： H01J27/022
摘要： A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole.
摘要翻译：在面向阴极的离子源的等离子体发生室中设置了排斥结构，该阴极发射用于电离等离子体发生室中的源气体的电子以产生等离子体。排斥结构将离子反射向阴极。反射器结构包括由等离子体溅射以发射预定离子的溅射靶，溅射靶包括连接溅射表面和溅射靶的后表面的通孔; 以及电极体，其插入在所述通孔中，所述电极体包括通过所述通孔暴露于所述溅射表面侧的反射器表面。

7. 发明授权

US07772573B2 Ion implanting apparatus and method of correcting beam orbit 失效
标题翻译：离子注入装置和光束轨道校正方法
公开(公告)号：US07772573B2
公开(公告)日：2010-08-10
申请号：US12476836
申请日：2009-06-02
申请人： Tetsuya Igo , Takatoshi Yamashita , Tadashi Ikejiri
发明人： Tetsuya Igo , Takatoshi Yamashita , Tadashi Ikejiri
IPC分类号： G21K5/10 , H01J49/00 , B01D59/44
CPC分类号： H01J37/3171 , H01J37/1471 , H01J2237/055 , H01J2237/08 , H01J2237/1501 , H01J2237/2446 , H01J2237/24528 , H01J2237/304
摘要： An extraction electrode of an ion source is dividedly configured by a first extraction electrode and a second extraction electrode. DC power supplies which form a potential difference between the electrodes, a camera which takes an image of the ion beam to output image data of the ion beam, and a rear-stage beam instrument which measures the beam current of the ion beam that has passed through the analysis slit are disposed. A step of adjusting an analysis electromagnet current so that the beam current measured by the rear-stage beam instrument is maximum, that of processing the image data from the camera to obtain the deviation angle of the ion beam entering the analysis slit from the design beam orbit, and that of, if the deviation angle is not within an allowable range, adjusting the potential difference between the electrodes so that the ion beam is bent to a direction where the deviation angle becomes small, by the potential difference are performed one or more times until the deviation angle is within the allowable range.
摘要翻译：离子源的提取电极由第一引出电极和第二引出电极分开地构成。形成电极之间的电位差的直流电源，拍摄离子束的图像以输出离子束的图像数据的照相机，以及测量已经通过的离子束的束电流的后级光束仪器通过分析缝设置。调整分析电磁体电流使得由后级光束仪测得的光束电流最大的步骤是从相机处理图像数据以获得进入分析狭缝的离子束与设计光束的偏离角度的步骤并且如果偏离角不在允许范围内，则调整电极之间的电位差使得离子束弯曲到偏移角变小的方向，通过电位差进行一个或多个次，直到偏离角度在允许范围内。

8. 发明授权

US07755062B2 Ion source and ion implantation apparatus 失效
标题翻译：离子源和离子注入装置
公开(公告)号：US07755062B2
公开(公告)日：2010-07-13
申请号：US12391919
申请日：2009-02-24
申请人： Takatoshi Yamashita , Tadashi Ikejiri
发明人： Takatoshi Yamashita , Tadashi Ikejiri
IPC分类号： H01J27/02 , H01J49/10 , H01J49/14
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J2237/082 , H01J2237/24507 , H01J2237/24521 , H01J2237/24535 , H01J2237/24542 , H01J2237/30472 , H01J2237/31703
摘要： An ion source is to extract a ribbon-shaped ion beam longer in the Y direction in the Z direction and provided with a plasma generating chamber, a plasma electrode which is disposed near the end of the plasma generating chamber in the Z direction and has an ion extracting port extending in the Y direction, a plurality of cathodes for emitting electrons into the plasma generating chamber to generate a plasma and arranged in a plurality of stages along the Y direction, and a magnetic coil which generates magnetic fields along the Z direction in a domain containing the plurality of cathodes inside the plasma generating chamber.
摘要翻译：离子源是在Z方向上在Y方向上提取长度较长的带状离子束，并设置有等离子体发生室，等离子体电极，其设置在等离子体产生室的Z方向的端部附近，具有在Y方向上延伸的离子提取口，多个用于将电子发射到等离子体发生室中的阴极，以产生等离子体并且沿着Y方向分布在多个级中;以及磁线圈，沿着Z方向产生磁场包含等离子体发生室内部的多个阴极的畴。

9. 发明申请

US20090078890A1 ION SOURCE, ION IMPLANTATION APPARATUS, AND ION IMPLANTATION METHOD 有权
标题翻译：离子源，离子植入装置和离子植入方法
公开(公告)号：US20090078890A1
公开(公告)日：2009-03-26
申请号：US12233151
申请日：2008-09-18
申请人： Takatoshi Yamashita , Tadashi Ikejiri , Keiko Kuzawa , Hideyuki Fujiwara
发明人： Takatoshi Yamashita , Tadashi Ikejiri , Keiko Kuzawa , Hideyuki Fujiwara
IPC分类号： A61N5/00 , H01J27/02
CPC分类号： H01J27/14 , H01J37/08 , H01J37/3171 , H01J2237/061 , H01J2237/082 , H01J2237/083 , H01J2237/24542 , H01J2237/304 , H01J2237/30472 , H01J2237/31708 , H01J2237/3171
摘要： This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel.
摘要翻译：该离子源产生其Y方向的尺寸大于X方向的尺寸的带状离子束。该离子源包括具有沿Y方向延伸的离子提取口的等离子体发生容器，在等离子体发生容器中沿着X方向的一侧沿着Y方向排列成多个的多个阴极，反射电极配置在与阴极相反的等离子体发生容器中的X方向的另一侧，以及用于在等离子体发生容器中包括多个阴极的区域沿着X方向产生磁场的电磁体。

10. 发明授权

US07098614B2 Electrostatic accelerator and ion implanting apparatus with the same 有权
公开(公告)号：US07098614B2
公开(公告)日：2006-08-29
申请号：US10357398
申请日：2003-02-04
申请人： Takatoshi Yamashita
发明人： Takatoshi Yamashita
IPC分类号： H01J23/00
CPC分类号： H01J37/3171 , H01J2237/04735
摘要： This electrostatic acceleration column has first to fifth electrodes arranged in a traveling direction of ions, which are a kind of charged particles. Then, the second electrode divided into two electrode members, which are opposed to each other across a path of the ions, and to which different electric potentials are applied to deflect the ions. Further, the electrodes arranged on a downstream side from the electrode are arranged along an orbit of ions deflected by the electrode and having specific energy.

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