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1. 发明授权

US06955836B2 Silicon oxide film formation method 失效
标题翻译：氧化硅膜形成方法
公开(公告)号：US06955836B2
公开(公告)日：2005-10-18
申请号：US10326092
申请日：2002-12-23
申请人： Akira Kumagai , Keiji Ishibashi , Shigeru Mori
发明人： Akira Kumagai , Keiji Ishibashi , Shigeru Mori
IPC分类号： C23C16/40 , C23C16/44 , C23C16/452 , C23C16/455 , H01L21/316
CPC分类号： C23C16/45565 , C23C16/401 , C23C16/452 , C23C16/45591
摘要： A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO2 film) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (N2 gas, NO gas, N2O gas, NO2 gas or the like) is added to oxygen atom containing gas (O2 gas, O3 gas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.
摘要翻译：在使用RS-CVD系统形成氧化硅膜时，氧化硅膜形成方法提高了产生原子氧的效率并提高了硅膜（SiO 2膜）的膜质量。将含氮原子的气体（N 2气体，NO气体，N 2 O气体，NO 2气体等）加入氧原子将含有气体（O 2 O 2气体，O 3气体等）引入到真空容器中的等离子体产生空间中以产生具有这些气体的等离子体，从而增加数量由等离子体产生空间中的等离子体产生的原子氧。

2. 发明授权

US07981811B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07981811B2
公开(公告)日：2011-07-19
申请号：US12508888
申请日：2009-07-24
申请人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
发明人： Shigeru Mori , Takahiro Korenari , Tadahiro Matsuzaki , Hiroshi Tanabe
IPC分类号： H01L21/31
CPC分类号： H01L29/78621 , H01L29/66757
摘要： A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
摘要翻译：在绝缘基板上形成基底层，以局部方式形成半导体层。然后形成栅极绝缘膜以覆盖半导体层，并且栅极电极形成在栅极绝缘膜的一部分上。然后通过栅极绝缘膜将杂质注入到半导体层中，形成源极区，漏极区和LDD区。用稀氢氟酸蚀刻栅极绝缘膜。然后形成电极保护绝缘膜以覆盖栅电极，并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。因此，引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。

3. 发明授权

US07160572B2 Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same 有权
标题翻译：旋转隧道磁阻效应膜和元件，使用其的磁阻传感器，磁性装置及其制造方法
公开(公告)号：US07160572B2
公开(公告)日：2007-01-09
申请号：US10923990
申请日：2004-08-23
申请人： Junichi Fujikata , Tsutomu Ishi , Shigeru Mori
发明人： Junichi Fujikata , Tsutomu Ishi , Shigeru Mori
IPC分类号： B05D5/12
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B5/3909 , H01F10/3268 , H01L43/12 , Y10T428/1114
摘要： In a spin tunnel magnetoresistive effect film in which a magnetic thin film to which an exchange bias is applied by exchange coupling via an anti-ferromagnetic thin film and a magnetic thin film that detects a magnetic field are laminated, a magnetic thin film or an anti-ferromagnetic thin film (PtMn, PdMn, NiMn) is laminated onto an underlayer (Ta, Zr, Hf), the surface roughness thereof being in the range from 0.1 to 5 Angstroms. A means used to control the surface roughness introduces into the film growing chamber oxygen, nitrogen, hydrogen, or a gas mixture thereof into a vacuum of 10−6 Torr to 10−9 Torr, reduces the substrate temperature to 0° C. or lower during film growth, or oxidizes an underlayer. The lower electrode layer material used is a film laminate of a high-permeability amorphous magnetic material and a non-magnetic metallic layer.
摘要翻译：在通过反铁磁性薄膜进行交换耦合而施加了交换偏压的磁性薄膜和检测磁场的磁性薄膜的自旋隧道磁阻效应薄膜中，形成磁性薄膜或抗反射膜将铁磁性薄膜（PtMn，PdMn，NiMn）层压到底层（Ta，Zr，Hf）上，其表面粗糙度在0.1〜5埃的范围内。用于控制表面粗糙度的方法将薄膜生长室中的氧气，氮气，氢气或其气体混合物引入10 -6乇至10 -9乇的真空中 > Torr，在膜生长期间将衬底温度降低至0℃或更低，或氧化底层。所使用的下电极层材料是高磁导率非晶磁性材料和非磁性金属层的膜层叠体。

4. 发明申请

US20060274456A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US20060274456A1
公开(公告)日：2006-12-07
申请号：US11477402
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kiyokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

5. 发明申请

US20060268467A1 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system 有权
公开(公告)号：US20060268467A1
公开(公告)日：2006-11-30
申请号：US11477410
申请日：2006-06-30
申请人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kivokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
发明人： Kazuhiko Hayashi , Junichi Fujikata , Tsutomu Ishi , Shigeru Mori , Keishi Ohashi , Masafumi Nakada , Kivokazu Nagahara , Kunihiko Ishihara , Nobuyuki Ishiwata
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R31/3171 , G01R33/093 , G11B5/00 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B5/3967 , H01F10/3268
摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

6. 发明授权

US06680081B2 Conductive powder and making process 失效
标题翻译：导电粉和制作工艺
公开(公告)号：US06680081B2
公开(公告)日：2004-01-20
申请号：US10102846
申请日：2002-03-22
申请人： Motoo Fukushima , Kunio Itoh , Shigeru Mori , Masaki Kasashima , Yoshitaka Hamada , Mikio Aramata
发明人： Motoo Fukushima , Kunio Itoh , Shigeru Mori , Masaki Kasashima , Yoshitaka Hamada , Mikio Aramata
IPC分类号： C23C1832
CPC分类号： H01B1/22 , H05K3/323 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996
摘要： A conductive powder having an organic silicon polymer layer on the surface of each particle and a metal layer enclosing the silicon polymer layer possesses a stronger bond between the particle base and the metal even at elevated temperature and exhibits a high and stable conductivity and heat resistance.
摘要翻译：在每个颗粒的表面上具有有机硅聚合物层的导电粉末和包围硅聚合物层的金属层即使在升高的温度下也具有更强的颗粒基体和金属之间的结合，并表现出高且稳定的导电性和耐热性。

7. 发明授权

US06616511B2 Rolling mill equipped with on-line roll grinding system and grinding wheel 失效
公开(公告)号：US06616511B2
公开(公告)日：2003-09-09
申请号：US09873190
申请日：2001-06-05
申请人： Shigeru Mori , Shigetoshi Kondoh , Tadashi Nishino , Yasutsugu Yoshimura , Yasuharu Imagawa , Hiroyuki Shiraiwa
发明人： Shigeru Mori , Shigetoshi Kondoh , Tadashi Nishino , Yasutsugu Yoshimura , Yasuharu Imagawa , Hiroyuki Shiraiwa
IPC分类号： B24B100
CPC分类号： B24B5/363 , B21B13/023 , B21B28/04 , B24B5/167 , B24B49/16 , B24D9/08 , G05B19/4163
摘要： A grinding head unit is constituted by a grinding wheel, a drive device for rotating the grinding wheel, and a movement device for moving the grinding wheel. When vibration of a mill roll is applied to the grinding wheel, a plain wheel integral with an abrasive layer of the grinding wheel and having an elastically deforming function is deflected to absorb the vibration energy. The contact force between the abrasive layer and the mill roll is measured for determining a profile of the mill roll. The mill roll can be thereby ground into a target profile while absorbing the vibration transmitted from the mill roll and measuring the profile of the mill roll, without causing any chattering marks.

8. 发明授权

US06585558B1 Rolling mill equipped with on-line roll grinding system and grinding wheel 失效
公开(公告)号：US06585558B1
公开(公告)日：2003-07-01
申请号：US09376489
申请日：1999-08-18
申请人： Shigeru Mori , Shigetoshi Kondoh , Tadashi Nishino , Yasutsugu Yoshimura , Yasuharu Imagawa , Hiroyuki Shiraiwa
发明人： Shigeru Mori , Shigetoshi Kondoh , Tadashi Nishino , Yasutsugu Yoshimura , Yasuharu Imagawa , Hiroyuki Shiraiwa
IPC分类号： B24B504
CPC分类号： B24B5/363 , B21B13/023 , B21B28/04 , B24B5/167 , B24B49/16 , B24D9/08 , G05B19/4163
摘要： A grinding head unit is constituted by a grinding wheel, a drive device for rotating the grinding wheel, and a movement device for moving the grinding wheel. When vibration of a mill roll is applied to the grinding wheel, a plain wheel integral with an abrasive layer of the grinding wheel and having an elastically deforming function is deflected to absorb the vibration energy. The contact force between the abrasive layer and the mill roll is measured for determining a profile of the mill roll. The mill roll can be thereby ground into a target profile while absorbing the vibration transmitted from the mill roll and measuring the profile of the mill roll, without causing any chattering marks.

9. 发明授权

US06431951B1 Online roll grinding method and online roll grinding apparatus 有权
公开(公告)号：US06431951B1
公开(公告)日：2002-08-13
申请号：US09768455
申请日：2001-01-25
申请人： Mitsuru Onose , Shigeru Mori
发明人： Mitsuru Onose , Shigeru Mori
IPC分类号： B24B504
摘要： Upper and lower working rolls 2a, 2b are ground while moving respective grindstone devices 3a, 3b in reverse directions, whereby the region of grinding for the upper working roll 2a and that for the lower working roll 2b are maintained in symmetry with respect to the center of rolls, one on the operating side and the other on the driving side. By this arrangement, it is possible to equalize the coefficients of friction on the operating side and the driving side, and to prevent meandering of the rolling stock 6 as well as drawing (squeezing) or bad product shape due to the meandering from occurring. The timings to start grinding by the grindstone devices 3a, 3b are set to be substantially the same, and the velocities of movement of the grindstone devices 3a, 3b in the axial direction of the working rolls are set to be equal, whereby the difference in frictional coefficient due to grinding in the longitudinal direction of the rolls can stably be kept small.

10. 发明授权

US06283823B1 Rolling mill equipped with on-line roll grinding system and grinding wheel 失效
公开(公告)号：US06283823B1
公开(公告)日：2001-09-04
申请号：US09376490
申请日：1999-08-18
申请人： Shigeru Mori , Shigetoshi Kondoh , Tadashi Nishino , Yasutsugu Yoshimura , Yasuharu Imagawa , Hiroyuki Shiraiwa
发明人： Shigeru Mori , Shigetoshi Kondoh , Tadashi Nishino , Yasutsugu Yoshimura , Yasuharu Imagawa , Hiroyuki Shiraiwa
IPC分类号： B24B100
CPC分类号： B24B5/363 , B21B13/023 , B21B28/04 , B24B5/167 , B24B49/16 , B24D9/08 , G05B19/4163
摘要： A grinding head unit is constituted by a grinding wheel, a drive device for rotating the grinding wheel, and a movement device for moving the grinding wheel. When vibration of a mill roll is applied to the grinding wheel, a plain wheel integral with an abrasive layer of the grinding wheel and having an elastically deforming function is deflected to absorb the vibration energy. The contact force between the abrasive layer and the mill roll is measured for determining a profile of the mill roll. The mill roll can be thereby ground into a target profile while absorbing the vibration transmitted from the mill roll and measuring the profile of the mill roll, without causing any chattering marks.

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