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    • 4. 发明申请
    • METHOD AND SYSTEM FOR PROVIDING A NONVOLATILE LOGIC ARRAY
    • 提供非诺基亚逻辑阵列的方法和系统
    • US20140225643A1
    • 2014-08-14
    • US13557376
    • 2012-07-25
    • Dmytro ApalkovEugene ChenKaveh Milaninia
    • Dmytro ApalkovEugene ChenKaveh Milaninia
    • H03K19/08H01L43/12H01L27/22
    • H01L27/224H01L43/08H01L43/12Y10S977/74
    • A method and system provide and program a nonvolatile logic device. The nonvolatile logic device includes input and output magnetic junctions and at least one magnetic junction between the input and output magnetic junctions. The input magnetic junction includes an input junction free layer having an input junction easy axis. The input magnetic junction may be switchable using a current driven through the magnetic junction. The output magnetic junction includes an output junction free layer having an output junction easy axis. Each of the magnetic junction(s) includes a free layer having an easy axis. The input magnetic junction is magnetically coupled to the output magnetic junction through the magnetic junction(s). In some aspects, the method includes switching the magnetic moment(s) of the input magnetic junction from a first state to a second state, applying and then removing magnetic field(s) along the hard axis of the at least one magnetic junction.
    • 方法和系统提供和编程非易失性逻辑器件。 非易失性逻辑器件包括输入和输出磁结以及输入和输出磁性结之间的至少一个磁结。 输入磁结包括具有输入结易轴的输入结自由层。 可以使用通过磁结驱动的电流来切换输入磁结。 输出磁结包括具有输出结容易轴的输出结自由层。 每个磁结包括具有容易轴的自由层。 输入磁结通过磁结磁耦合到输出磁结。 在一些方面,该方法包括将输入磁结的磁矩从第一状态切换到第二状态,然后施加沿着至少一个磁结的硬轴移除磁场。
    • 8. 发明授权
    • Method and system for providing a magnetic memory structure utilizing spin transfer
    • 提供利用自旋转移的磁记忆体结构的方法和系统
    • US07623369B2
    • 2009-11-24
    • US12030541
    • 2008-02-13
    • Xiao LuoEugene ChenLien-Chang WangYiming Huai
    • Xiao LuoEugene ChenLien-Chang WangYiming Huai
    • G11C16/04
    • G11C11/1675G11C8/12G11C8/14G11C11/1657G11C11/1659G11C11/1673
    • A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
    • 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供磁存储器单元,局部和全局字线,位线和源极线。 每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。 磁性元件由在第一和第二方向通过磁性元件驱动的第一和第二写入电流编程。 局部字线与第一电阻率的选择装置连接。 每个全局字线对应于局部字线的一部分,并具有低于第一电阻率的电阻率。 位线与磁性元件连接。 源极线与选择器件连接。 每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。