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1. 发明授权

US08704252B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08704252B2
公开(公告)日：2014-04-22
申请号：US12603929
申请日：2009-10-22
申请人： Chun-Kai Wang , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
发明人： Chun-Kai Wang , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025
摘要： This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.
摘要翻译：本发明公开了一种发光器件，其包括具有多量子阱（MQW）结构的有源层的半导体叠层层，其包括量子阱层和阻挡层的交替层叠层，其中阻挡层包括至少一个掺杂阻挡层和一个未掺杂的阻挡层。掺杂阻挡层可以改善电子空穴的载流子迁移率，增加有源层的发光面积和内部量子效率。

2. 发明申请

US20100102295A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100102295A1
公开(公告)日：2010-04-29
申请号：US12603929
申请日：2009-10-22
申请人： Chun-Kai WANG , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
发明人： Chun-Kai WANG , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025
摘要： This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.
摘要翻译：本发明公开了一种发光器件，其包括具有多量子阱（MQW）结构的有源层的半导体叠层层，其包括量子阱层和阻挡层的交替层叠层，其中阻挡层包括至少一个掺杂阻挡层和一个未掺杂的阻挡层。掺杂阻挡层可以改善电子空穴的载流子迁移率，增加有源层的发光面积和内部量子效率。

3. 发明授权

US08519430B2 Optoelectronic device and method for manufacturing the same 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08519430B2
公开(公告)日：2013-08-27
申请号：US13225117
申请日：2011-09-02
申请人： Wei-Chih Peng , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
发明人： Wei-Chih Peng , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L31/0543 , H01L31/0547 , H01L31/075 , H01L33/0066 , H01L33/12 , H01L33/16 , H01L33/305 , H01L33/46 , Y02E10/52 , Y02E10/548
摘要： An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
摘要翻译：光电子器件包括衬底和形成在衬底上的第一过渡堆叠，其包括至少形成在衬底上的第一过渡层，并且具有形成在第一过渡层内部的至少一个中空部件，以及第二过渡层，其中第二过渡层是形成在第一过渡层上的无意掺杂层或未掺杂层。

4. 发明申请

US20120104455A1 OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电装置及其制造方法
公开(公告)号：US20120104455A1
公开(公告)日：2012-05-03
申请号：US13225117
申请日：2011-09-02
申请人： Wei-Chih PENG , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
发明人： Wei-Chih PENG , Min-Hsun Hsieh , Ming-Chi Hsu , Wei-Yu Yen , Chun-Kai Wang , Yen-Chih Chen , Schang-Jing Hon , Hsin-Ying Wang , Chien-Kai Chung
IPC分类号： H01L33/60 , H01L33/26
CPC分类号： H01L33/22 , H01L31/0543 , H01L31/0547 , H01L31/075 , H01L33/0066 , H01L33/12 , H01L33/16 , H01L33/305 , H01L33/46 , Y02E10/52 , Y02E10/548
摘要： An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
摘要翻译：光电子器件包括衬底和形成在衬底上的第一过渡堆叠，其包括至少形成在衬底上的第一过渡层，并且具有形成在第一过渡层内部的至少一个中空部件，以及第二过渡层，其中第二过渡层是形成在第一过渡层上的无意掺杂层或未掺杂层。

5. 发明授权

US09263641B2 Light emitting diodes 有权
标题翻译：发光二极管
公开(公告)号：US09263641B2
公开(公告)日：2016-02-16
申请号：US13464544
申请日：2012-05-04
申请人： Wei-chun Tseng , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-chun Tseng , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/38 , H01L33/40 , H01L33/22 , H01L33/32
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382
摘要： An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.
摘要翻译：用于LED的电接触结构包括氮化物中间层和N型金属电极层。 LED包括层叠以形成夹层结构的N型半导体层，发光层和P型半导体层。氮化物中间层被图案化并形成在N型半导体层上。 N型金属电极层形成在氮化物中间层上，并且由于氮化物中间层用作阻挡界面，因此防止金属离子的扩散而损坏，因此可以保持N型半导体层的电性能。氮化物中间层由于长期高温而不会软化和冷凝，从而增强了粘附力。此外，还可以防止N型金属电极层剥离，从而增加LED的寿命。

6. 发明申请

US20130292734A1 ELECTRIC CONTACT STRUCTURE FOR LIGHT EMITTING DIODES 有权
标题翻译：用于发光二极管的电接触结构
公开(公告)号：US20130292734A1
公开(公告)日：2013-11-07
申请号：US13464544
申请日：2012-05-04
申请人： Wei-chun TSENG , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-chun TSENG , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/38
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382
摘要： An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.
摘要翻译：用于LED的电接触结构包括氮化物中间层和N型金属电极层。 LED包括层叠以形成夹层结构的N型半导体层，发光层和P型半导体层。氮化物中间层被图案化并形成在N型半导体层上。 N型金属电极层形成在氮化物中间层上，并且由于氮化物中间层用作阻挡界面，因此防止金属离子的扩散而损坏，因此可以保持N型半导体层的电性能。氮化物中间层由于长期高温而不会软化和冷凝，从而增强了粘附力。此外，还可以防止N型金属电极层剥离，从而增加LED的寿命。

7. 发明授权

US09224911B2 Method for separating light-emitting diode from a substrate 有权
标题翻译：从基板分离发光二极管的方法
公开(公告)号：US09224911B2
公开(公告)日：2015-12-29
申请号：US13611951
申请日：2012-09-12
申请人： Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/48 , H01L33/00
CPC分类号： H01L33/0079
摘要： A method for separating a light-emitting diode (LED) from a substrate comprises the following steps. First, a substrate is provided which includes a junction surface and a bottom surface far away from the junction surface. Then a plurality holes are formed on the junction surface. An LED structure is further grown on the junction surface, and includes a junction portion bonded to the junction surface. The bottom surface is then polished to be shrunk to communicate with the holes. Finally, the junction portion is etched by an etching liquid via the holes to separate the LED structure from the substrate. Accordingly, by forming the holes, the LED structure and the substrate can be separated through polishing and etching processes, thereby providing a high yield rate as well as reduced production costs.
摘要翻译：从基板分离发光二极管（LED）的方法包括以下步骤。首先，提供一种衬底，其包括接合面和远离接合面的底面。然后在接合面上形成多个孔。在结表面上进一步生长LED结构，并且包括结合到接合面的接合部分。然后将底面抛光以收缩以与孔连通。最后，通过蚀刻液通过孔蚀刻接合部分，以将LED结构与衬底分离。因此，通过形成孔，可以通过研磨和蚀刻工艺分离LED结构和基板，从而提供高产率并降低生产成本。

8. 发明授权

US08766303B2 Light-emitting diode with a mirror protection layer 有权
标题翻译：具有镜面保护层的发光二极管
公开(公告)号：US08766303B2
公开(公告)日：2014-07-01
申请号：US13601161
申请日：2012-08-31
申请人： Wei-Yu Yen , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-Yu Yen , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/405 , H01L33/44
摘要： A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.
摘要翻译：具有镜面保护层的发光二极管（LED）包括依次层叠N型电极，N型半导体层，发光层，P型半导体层，金属镜面层，保护层，缓冲层，结合层，永久基板和P型电极。保护层由金属氧化物制成，并且具有用于覆盖或支撑金属镜面层的边缘的中空框架。

9. 发明申请

US20130161669A1 LIGHT-EMITTING DIODE WITH CURRENT DIFFUSION STRUCTURE AND A METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：具有电流扩散结构的发光二极管及其制造方法
公开(公告)号：US20130161669A1
公开(公告)日：2013-06-27
申请号：US13336720
申请日：2011-12-23
申请人： Fu-Bang Chen , Wei-Yu Yen , Chih-Sung Chang
发明人： Fu-Bang Chen , Wei-Yu Yen , Chih-Sung Chang
IPC分类号： H01L33/60 , H01L33/22
CPC分类号： H01L33/145 , H01L33/22
摘要： An LED with a current diffusion structure comprises an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode and a current blocking layer. The N-type semiconductor layer, light emitting layer and P-type semiconductor layer form a sandwich structure. The N-type and P-type electrodes are respectively arranged on the N-type and P-type semiconductor layers. The current blocking layer has the pattern of the N-type electrode and is embedded inside the N-type semiconductor layer. Thereby not only current generated by the N-type electrode detours the current blocking layer and uniformly passes through the light emitting layer, but also prevents interface effect to increase impedance. Thus is promoted lighting efficiency of LED. Further, as main light-emitting regions of the light emitting layer are far from the N-type electrode, light shielded by the N-type electrode is reduced and illumination of LED is thus enhanced.
摘要翻译：具有电流扩散结构的LED包括N型半导体层，发光层，P型半导体层，N型电极，P型电极和电流阻挡层。 N型半导体层，发光层和P型半导体层形成夹层结构。 N型和P型电极分别设置在N型和P型半导体层上。电流阻挡层具有N型电极的图案，并且嵌入在N型半导体层的内部。因此，不仅由N型电极产生的电流绕过电流阻挡层并均匀地通过发光层，而且防止了界面效应增加阻抗。从而提高了LED的照明效率。此外，随着发光层的主要发光区域远离N型电极，由N型电极屏蔽的光减少，因此LED的照明得到增强。

10. 发明申请

US20130307012A1 TENSION RELEASE LAYER STRUCTURE OF LIGHT-EMITTING DIODE 审中-公开
标题翻译：发光二极管张力释放层结构
公开(公告)号：US20130307012A1
公开(公告)日：2013-11-21
申请号：US13472141
申请日：2012-05-15
申请人： Li-Ping Chou , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Li-Ping Chou , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/62
CPC分类号： H01L33/12 , H01L33/22 , H01L33/405
摘要： A tension release layer structure is applied to an LED which includes a P-type electrode, a permanent substrate, a binding layer, a tension release layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. The tension release layer is made of a complex material including at least two material elements with boundaries that are blended with each other. As the complex material in the tension release layer does not have apparent interface separation, stress between interface effect and materials can be eliminated to increase light-emitting efficiency and production yield of the LED.
摘要翻译：张力释放层结构被应用于包括P型电极，永久性基板，结合层，张力释放层，镜面层，P型半导体层，发光层，N 型半导体层和N型电极。张力释放层由包括具有彼此混合的边界的至少两种材料元素的复合材料制成。由于张力释放层中的复合材料没有明显的界面分离，可以消除界面效应和材料之间的应力，从而提高LED的发光效率和产量。

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