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1. 发明授权

US08704252B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08704252B2
公开(公告)日：2014-04-22
申请号：US12603929
申请日：2009-10-22
申请人： Chun-Kai Wang , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
发明人： Chun-Kai Wang , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025
摘要： This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.
摘要翻译：本发明公开了一种发光器件，其包括具有多量子阱（MQW）结构的有源层的半导体叠层层，其包括量子阱层和阻挡层的交替层叠层，其中阻挡层包括至少一个掺杂阻挡层和一个未掺杂的阻挡层。掺杂阻挡层可以改善电子空穴的载流子迁移率，增加有源层的发光面积和内部量子效率。

2. 发明申请

US20100102295A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100102295A1
公开(公告)日：2010-04-29
申请号：US12603929
申请日：2009-10-22
申请人： Chun-Kai WANG , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
发明人： Chun-Kai WANG , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025
摘要： This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.
摘要翻译：本发明公开了一种发光器件，其包括具有多量子阱（MQW）结构的有源层的半导体叠层层，其包括量子阱层和阻挡层的交替层叠层，其中阻挡层包括至少一个掺杂阻挡层和一个未掺杂的阻挡层。掺杂阻挡层可以改善电子空穴的载流子迁移率，增加有源层的发光面积和内部量子效率。

3. 发明授权

US08729525B2 Opto-electronic device 有权
标题翻译：光电器件
公开(公告)号：US08729525B2
公开(公告)日：2014-05-20
申请号：US12547073
申请日：2009-08-25
申请人： Jui-Yi Chu , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
发明人： Jui-Yi Chu , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
IPC分类号： H01L29/06 , H01L33/06
CPC分类号： H01L33/06 , H01L33/325
摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.
摘要翻译：本申请涉及一种光电器件。光电器件包括n包层，p包层和多量子阱结构。多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。

4. 发明申请

US20090057696A1 Light emitting diode device and manufacturing method therof 有权
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20090057696A1
公开(公告)日：2009-03-05
申请号：US12222814
申请日：2008-08-18
申请人： Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Jui-Yi Chu , Tsung-Kuang Chen
发明人： Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Jui-Yi Chu , Tsung-Kuang Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/14
摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.
摘要翻译：提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

5. 发明授权

US07902562B2 Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof 有权
标题翻译：包括三维云结构的发光二极管装置及其制造方法
公开(公告)号：US07902562B2
公开(公告)日：2011-03-08
申请号：US12222814
申请日：2008-08-18
申请人： Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Jui-Yi Chu , Tsung-Kuang Chen
发明人： Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Jui-Yi Chu , Tsung-Kuang Chen
IPC分类号： H01L33/32
CPC分类号： H01L33/14
摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.
摘要翻译：提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

6. 发明申请

US20130062657A1 LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光二极管结构及其制造方法
公开(公告)号：US20130062657A1
公开(公告)日：2013-03-14
申请号：US13614090
申请日：2012-09-13
申请人： Kuo-Lung Fang , Jui-Yi Chu , Jun-Rong Chen , Chi-Wen Kuo
发明人： Kuo-Lung Fang , Jui-Yi Chu , Jun-Rong Chen , Chi-Wen Kuo
IPC分类号： H01L33/62
CPC分类号： H01L33/145 , H01L33/382 , H01L2933/0016
摘要： A light-emitting diode structure is disclosed. A substrate has a first semiconductor layer, a light-emitting layer and a second semiconductor layer formed thereon. The first and second semiconductor layers are of opposite conductivity types. A first contact electrode is disposed between the first semiconductor layer and the substrate, and has a protruding portion extending into the second semiconductor layer. A barrier layer is conformally formed on the first contact electrode and exposes a top surface of the protruding portion. A current blocking member is disposed on the barrier layer and around at least a sidewall of the protruding portion. A second contact electrode is disposed between the first semiconductor layer and the first contact electrode, and in direct contact with the first semiconductor layer, wherein the second contact electrode is electrically insulated from the first contact electrode by the barrier layer.
摘要翻译：公开了一种发光二极管结构。基板具有形成在其上的第一半导体层，发光层和第二半导体层。第一和第二半导体层具有相反的导电类型。第一接触电极设置在第一半导体层和基板之间，并且具有延伸到第二半导体层中的突出部分。阻挡层在第一接触电极上共形地形成并暴露突出部分的顶表面。电流阻挡构件设置在阻挡层上并且至少围绕突出部分的侧壁。第二接触电极设置在第一半导体层和第一接触电极之间，并且与第一半导体层直接接触，其中第二接触电极通过阻挡层与第一接触电极电绝缘。

7. 发明申请

US20130049015A1 LEDS AND METHODS FOR MANUFACTURING THE SAME 审中-公开
标题翻译： LEDS及其制造方法
公开(公告)号：US20130049015A1
公开(公告)日：2013-02-28
申请号：US13591721
申请日：2012-08-22
申请人： Kuo-Lung Fang , Jui-Yi Chu
发明人： Kuo-Lung Fang , Jui-Yi Chu
IPC分类号： H01L33/02
CPC分类号： H01L33/22 , H01L33/20
摘要： A light emitting diode (LED) is disclosed. The LED includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a patterned structure. The first semiconductor layer having first and second regions is positioned on the substrate, wherein the first region is thicker than the second region. The active layer is positioned on the first region of the first semiconductor layer. The second semiconductor layer is positioned on the active layer, wherein the first and second semiconductor layers have opposite conductivities. The patterned structure is formed on a sidewall of the first region of the first semiconductor layer or on a sidewall of the second semiconductor layer.
摘要翻译：公开了一种发光二极管（LED）。 LED包括衬底，第一半导体层，有源层，第二半导体层和图案化结构。具有第一和第二区域的第一半导体层位于衬底上，其中第一区域比第二区域厚。有源层位于第一半导体层的第一区域上。第二半导体层位于有源层上，其中第一和第二半导体层具有相反的导电性。图案化结构形成在第一半导体层的第一区域的侧壁上或第二半导体层的侧壁上。

8. 发明授权

US08710530B2 Light emitted diode 有权
标题翻译：发光二极管
公开(公告)号：US08710530B2
公开(公告)日：2014-04-29
申请号：US13572209
申请日：2012-08-10
申请人： Shih Pu Yang , Jui-Yi Chu
发明人： Shih Pu Yang , Jui-Yi Chu
IPC分类号： H01L29/22
CPC分类号： H01L33/10 , H01L33/0079
摘要： The present invention relates to a light emitted diode (LED). The LED includes a metal mirror, a bonding substrate, a distributed bragg reflector (DBR), a buffer layer, and a LED epitaxial structure. The bonding substrate is arranged under the metal mirror. The DBR is arranged on the metal mirror. The buffer layer is arranged on the DBR. The LED epitaxial structure is arranged on the buffer layer.
摘要翻译：本发明涉及一种发光二极管（LED）。 LED包括金属镜，接合衬底，分布式布拉格反射器（DBR），缓冲层和LED外延结构。接合基板设置在金属镜下方。 DBR布置在金属镜上。缓冲层布置在DBR上。 LED外延结构布置在缓冲层上。

9. 发明授权

US08253160B2 Light-emitting diode chip structure and fabrication method thereof 有权
标题翻译：发光二极管芯片结构及其制造方法
公开(公告)号：US08253160B2
公开(公告)日：2012-08-28
申请号：US13050677
申请日：2011-03-17
申请人： Jun-Rong Chen , Chi-Wen Kuo , Kun-Fu Huang , Jui-Yi Chu , Kuo-Lung Fang
发明人： Jun-Rong Chen , Chi-Wen Kuo , Kun-Fu Huang , Jui-Yi Chu , Kuo-Lung Fang
IPC分类号： H01L33/20
CPC分类号： H01L33/20 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/382 , H01L33/387
摘要： A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.
摘要翻译：提供了包括导电基板，半导体堆叠层和图案化晶种层的发光二极管芯片结构。导电基板具有表面。表面具有交替地分布在表面上的第一区域和第二区域。半导体层叠层设置在导电性基板上，导电性基板的表面面向半导体层叠层。图案化晶种层设置在导电基板的表面的第一区域上，并且在导电基板和半导体堆叠层之间。图案化晶种层将半导体层叠层与第一区域分开。半导体堆叠层覆盖图案化晶种层和第二区域，并且通过第二区域电连接到导电基板。还提供了发光二极管芯片结构的制造方法。

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