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1. 发明授权

US08704252B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08704252B2
公开(公告)日：2014-04-22
申请号：US12603929
申请日：2009-10-22
申请人： Chun-Kai Wang , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
发明人： Chun-Kai Wang , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025
摘要： This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.
摘要翻译：本发明公开了一种发光器件，其包括具有多量子阱（MQW）结构的有源层的半导体叠层层，其包括量子阱层和阻挡层的交替层叠层，其中阻挡层包括至少一个掺杂阻挡层和一个未掺杂的阻挡层。掺杂阻挡层可以改善电子空穴的载流子迁移率，增加有源层的发光面积和内部量子效率。

2. 发明申请

US20100102295A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100102295A1
公开(公告)日：2010-04-29
申请号：US12603929
申请日：2009-10-22
申请人： Chun-Kai WANG , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
发明人： Chun-Kai WANG , Schang-Jing Hon , Yu-Pin Hsu , Jui-Yi Chu , Hsin-Hsien Wu , Wei-Yu Yen
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025
摘要： This invention discloses a light-emitting device comprising a semiconductor stack layer having an active layer of a multiple quantum well (MQW) structure comprising alternate stack layers of quantum well layers and barrier layers, wherein the barrier layers comprise at least one doped barrier layer and one undoped barrier layer. The doped barrier layer can improve the carrier mobility of the electron holes and increase the light-emitting area and the internal quantum efficiency of the active layer.
摘要翻译：本发明公开了一种发光器件，其包括具有多量子阱（MQW）结构的有源层的半导体叠层层，其包括量子阱层和阻挡层的交替层叠层，其中阻挡层包括至少一个掺杂阻挡层和一个未掺杂的阻挡层。掺杂阻挡层可以改善电子空穴的载流子迁移率，增加有源层的发光面积和内部量子效率。

3. 发明授权

US08729525B2 Opto-electronic device 有权
标题翻译：光电器件
公开(公告)号：US08729525B2
公开(公告)日：2014-05-20
申请号：US12547073
申请日：2009-08-25
申请人： Jui-Yi Chu , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
发明人： Jui-Yi Chu , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
IPC分类号： H01L29/06 , H01L33/06
CPC分类号： H01L33/06 , H01L33/325
摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.
摘要翻译：本申请涉及一种光电器件。光电器件包括n包层，p包层和多量子阱结构。多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。

4. 发明申请

US20100046205A1 OPTO-ELECTRONIC DEVICE 有权
标题翻译：光电设备
公开(公告)号：US20100046205A1
公开(公告)日：2010-02-25
申请号：US12547073
申请日：2009-08-25
申请人： Jui-Yi CHU , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
发明人： Jui-Yi CHU , Cheng-Ta Kuo , Yu-Pin Hsu , Chun-Kai Wang , Hsin-Hsien Wu , Yi-Chieh Lin
IPC分类号： G02F1/13357 , H01L29/15
CPC分类号： H01L33/06 , H01L33/325
摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.
摘要翻译：本申请涉及一种光电器件。光电器件包括n包层，p包层和多量子阱结构。多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。

5. 发明授权

US09024341B2 Refractive index tuning of wafer level package LEDs 有权
$Refractive index tuning of wafer level package LEDs$
标题翻译：晶圆级封装LED的折射率调谐
公开(公告)号：US09024341B2
公开(公告)日：2015-05-05
申请号：US12912900
申请日：2010-10-27
申请人： Hsiao-Wen Lee , Shang-Yu Tsai , Tien-Ming Lin , Chyi Shyuan Chern , Hsin-Hsien Wu , Fu-Wen Liu , Huai-En Lai , Yu-Sheng Tang
发明人： Hsiao-Wen Lee , Shang-Yu Tsai , Tien-Ming Lin , Chyi Shyuan Chern , Hsin-Hsien Wu , Fu-Wen Liu , Huai-En Lai , Yu-Sheng Tang
IPC分类号： H01L33/00 , H01L33/54 , H01L33/44 , H01L33/50 , H01L33/56
CPC分类号： H01L33/54 , H01L33/44 , H01L33/504 , H01L33/507 , H01L33/56 , H01L2224/48091 , H01L2924/0002 , H01L2924/1305 , H01L2924/13091 , H01L2933/005 , H01L2924/00 , H01L2924/00014
摘要： Two or more molded ellipsoid lenses are formed on a packaged LED die by injecting a glue material into a mold over the LED die and curing the glue material. After curing, the refractive index of the lens in contact with the LED die is greater than the refractive index of the lens not directly contacting the LED die. At least one phosphor material is incorporated into the glue material for at least one of the lenses not directly contacting the LED die. The lens directly contacting the LED die may also include one or more phosphor material. A high refractive index coating may be applied between the LED die and the lens.
摘要翻译：在封装的LED模具上形成两个或多个模制的椭圆体透镜，该胶片通过将胶料注入到LED模具中的模具中并固化胶料。固化后，与LED芯片接触的透镜的折射率大于不直接接触LED芯片的透镜的折射率。对于不直接接触LED管芯的透镜中的至少一个，将至少一种磷光体材料结合到胶合材料中。直接接触LED芯片的透镜还可以包括一种或多种荧光体材料。可以在LED管芯和透镜之间施加高折射率涂层。

6. 发明授权

US08906712B2 Light emitting diode and method of fabrication thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08906712B2
公开(公告)日：2014-12-09
申请号：US13112046
申请日：2011-05-20
申请人： Hsin-Hsien Wu , Chyi Shyuan Chern , Chun-Lin Chang , Ching-Wen Hsiao , Kuang-Huan Hsu
发明人： Hsin-Hsien Wu , Chyi Shyuan Chern , Chun-Lin Chang , Ching-Wen Hsiao , Kuang-Huan Hsu
IPC分类号： H01L21/00 , H01L21/265 , H01L33/22 , H01L33/32
CPC分类号： H01L33/22 , H01L21/2654 , H01L21/26546 , H01L21/26593 , H01L33/0025 , H01L33/06 , H01L33/32
摘要： A method includes providing an LED element including a substrate and a gallium nitride (GaN) layer disposed on the substrate. The GaN layer is treated. The treatment includes performing an ion implantation process on the GaN layer. The ion implantation process may provide a roughened surface region of the GaN layer. In an embodiment, the ion implantation process is performed at a temperature of less than approximately 25 degrees Celsius. In a further embodiment, the substrate is at a temperature less than approximately zero degrees Celsius during the ion implantation process.
摘要翻译：一种方法包括提供包括衬底和设置在衬底上的氮化镓（GaN）层）的LED元件。处理GaN层。该处理包括在GaN层上执行离子注入工艺。离子注入工艺可以提供GaN层的粗糙化表面区域。在一个实施例中，离子注入过程在小于约25摄氏度的温度下进行。在另一个实施例中，在离子注入过程期间，衬底处于低于约零摄氏度的温度。

7. 发明授权

US08536491B2 Rotatable and tunable heaters for semiconductor furnace 有权
标题翻译：适用于半导体炉的可旋转和可调加热器
公开(公告)号：US08536491B2
公开(公告)日：2013-09-17
申请号：US12409880
申请日：2009-03-24
申请人： Zin-Chang Wei , Hsin-Hsien Wu , Chun-Lin Chang
发明人： Zin-Chang Wei , Hsin-Hsien Wu , Chun-Lin Chang
IPC分类号： F27D11/00 , H01L21/31 , H01L21/44
CPC分类号： H01L21/324 , F27B17/0025 , H01L21/67109
摘要： A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of rotatable heaters arranged and operative to heat the chamber. In one embodiment, spacing between the sidewall heaters is adjustable. The heating system controls temperature variations within the chamber and promotes uniform film deposit thickness on the wafers.
摘要翻译：适用于晶圆化学气相沉积处理的半导体炉。该炉包括具有顶部，底部，侧壁和用于可拆卸地保持一批垂直堆叠的晶片的内部空腔的热反应室。提供了一种加热系统，其包括多个可旋转的加热器，其布置并可操作以加热该腔室。在一个实施例中，侧壁加热器之间的间隔是可调节的。加热系统控制室内的温度变化并且促进在晶片上均匀的膜沉积物厚度。

8. 发明申请

US20130089937A1 METHOD AND APPARATUS FOR ACCURATE DIE-TO-WAFER BONDING 有权
标题翻译：用于准确地进行直接连接的方法和装置
公开(公告)号：US20130089937A1
公开(公告)日：2013-04-11
申请号：US13267025
申请日：2011-10-06
申请人： Chyi Shyuan Chern , Hsin-Hsien Wu , Chih-Kuang Yu , Hung-Yi Kuo
发明人： Chyi Shyuan Chern , Hsin-Hsien Wu , Chih-Kuang Yu , Hung-Yi Kuo
IPC分类号： H01L33/08
CPC分类号： H01L33/62 , H01L23/49513 , H01L25/0753 , H01L33/0095 , H01L33/08 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
摘要： A method of light-emitting diode (LED) packaging includes coupling a number of LED dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing LED dies is placed over the sub-mount. The sub-mount, the LED dies, and the mold apparatus are heated in a thermal reflow process to bond the LED dies to the bonding pads. Each recess substantially restricts shifting of the LED die with respect to the bonding pad during the heating.
摘要翻译：一种发光二极管（LED）封装的方法包括将多个LED管芯耦合到子安装座上的对应焊盘。具有容纳LED管芯的凹入凹槽的模具装置放置在子安装座上。子载体，LED管芯和模具装置在热回流过程中被加热以将LED管芯接合到接合焊盘。每个凹槽在加热期间基本上限制相对于接合焊盘的LED管芯的移位。

9. 发明申请

US20100181500A1 METHOD AND SYSTEM FOR LOW TEMPERATURE ION IMPLANTATION 审中-公开
标题翻译：用于低温离子植入的方法和系统
公开(公告)号：US20100181500A1
公开(公告)日：2010-07-22
申请号：US12355443
申请日：2009-01-16
申请人： Chun-Lin Chang , Zin-Chang Wei , Hsin-Hsien Wu
发明人： Chun-Lin Chang , Zin-Chang Wei , Hsin-Hsien Wu
IPC分类号： H01J37/08
CPC分类号： C30B31/22
摘要： A method comprises pre-cooling a first semiconductor wafer outside of a process chamber, from a temperature at or above 15° C. to a temperature below 5° C. The pre-cooled first wafer is placed inside the process chamber after performing the pre-cooling step. A low-temperature ion implantation is performed on the first wafer after placing the first wafer.
摘要翻译：一种方法包括将处理室外的第一半导体晶片从等于或高于15℃的温度预先冷却至低于5℃的温度。预冷却的第一晶片在执行预处理之后放置在处理室内部冷却步骤在放置第一晶片之后，在第一晶片上进行低温离子注入。

10. 发明申请

US20110257379A1 LEAD COMPOUND OF ANTI-HYPERTENSIVE DRUG AND METHOD FOR SCREENING THE SAME 审中-公开
标题翻译：抗高血压药物的铅化合物及其筛选方法
公开(公告)号：US20110257379A1
公开(公告)日：2011-10-20
申请号：US13170107
申请日：2011-06-27
申请人： Hsin-Hsien Wu
发明人： Hsin-Hsien Wu
IPC分类号： C07D285/135 , C07D405/06 , C07D417/06 , C07C229/64 , C07C235/84 , C07C245/08 , C07D403/06
CPC分类号： A61K31/135 , A61K31/40 , A61K31/41 , A61K31/415 , A61K31/495 , A61K31/505 , G16B35/00 , G16C20/60
摘要： A system for screening a small molecule library with 250,000 molecules to find out a compound of an anti-hypertensive drug aiming at human Angiotensin II type IA receptor is provided. The system includes a first database having a three-dimensional structure datum of a human Angiotensin II type IA receptor, a second database having molecular data of a plurality of small molecules, and a computer acquiring the three-dimensional structure datum and the molecular data from the first database and the second database respectively, wherein the computer has a molecular docking software for calculating a free energy of the human Angiotensin II type IA receptor bound to each of the plurality of small molecules, ranks the plurality of small molecules according to the respective free energy so as to select a top small molecule in the ranking as the compound of the drug.
摘要翻译：提供用于筛选具有25万分子的小分子文库的系统，以找出靶向人类血管紧张素II型IA受体的抗高血压药物的化合物。该系统包括具有人类血管紧张素II型IA受体的三维结构基准的第一数据库，具有多个小分子的分子数据的第二数据库，以及从三维结构数据获取三维结构数据和分子数据的计算机第一数据库和第二数据库，其中计算机具有用于计算结合多个小分子中的每一个的人类血管紧张素II型IA受体的自由能的分子对接软件，根据相应的方法对多个小分子进行排列自由能，以便选择排名中的顶级小分子作为药物的化合物。

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